公开(公告)号：US08686545B2

公开(公告)日：2014-04-01

申请号：US13394430

申请日：2011-07-21

申请人： Masanori Minamio ,  Tatsuo Sasaoka

发明人： Masanori Minamio ,  Tatsuo Sasaoka

IPC分类号： H01L23/495 ,  H01L21/00

CPC分类号： H01L23/3107 ,  H01L21/4878 ,  H01L23/4334 ,  H01L23/49503 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/84801 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2924/01033

摘要： A semiconductor device according to the present disclosure includes: a plate (13) having a through hole (15); a metal column (16) fixed to the through hole with an insulating member (17) interposed therebetween, and having a projection projecting from the upper surface of the plate; a semiconductor element (12) fixed to the projection; a lead frame (11) electrically connected to the semiconductor element; and a package (14) covering the semiconductor element, and also covering at least part of each of the plate, the metal column, and the lead frame. The lower surface (13b) of the plate is exposed from the package.

摘要翻译： 根据本公开的半导体器件包括：具有通孔（15）的板（13）; 固定在通孔上的金属柱（16），绝缘构件（17）插入其间，并且具有从板的上表面突出的突起; 固定到所述突起的半导体元件（12） 电连接到所述半导体元件的引线框架（11） 以及覆盖半导体元件的封装（14），并且还覆盖板，金属柱和引线框架中的每一个的至少一部分。 板的下表面（13b）从包装中露出。

公开(公告)号：US20120161302A1

公开(公告)日：2012-06-28

申请号：US13394430

申请日：2011-07-21

申请人： Masanori Minamio ,  Tatsuo Sasaoka

发明人： Masanori Minamio ,  Tatsuo Sasaoka

IPC分类号： H01L23/495 ,  H01L23/498 ,  H01L21/58 ,  H01L21/60

CPC分类号： H01L23/3107 ,  H01L21/4878 ,  H01L23/4334 ,  H01L23/49503 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/84801 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2924/01033

摘要： A semiconductor device according to the present disclosure includes: a plate (13) having a through hole (15); a metal column (16) fixed to the through hole with an insulating member (17) interposed therebetween, and having a projection projecting from the upper surface of the plate; a semiconductor element (12) fixed to the projection; a lead frame (11) electrically connected to the semiconductor element; and a package (14) covering the semiconductor element, and also covering at least part of each of the plate, the metal column, and the lead frame. The lower surface (13b) of the plate is exposed from the package.

摘要翻译： 根据本公开的半导体器件包括：具有通孔（15）的板（13）; 固定在通孔上的金属柱（16），绝缘构件（17）插入其间，并且具有从板的上表面突出的突起; 固定到所述突起的半导体元件（12） 电连接到所述半导体元件的引线框架（11） 以及覆盖半导体元件的封装（14），并且还覆盖板，金属柱和引线框架中的每一个的至少一部分。 板的下表面（13b）从包装中露出。

公开(公告)号：US20130221502A1

公开(公告)日：2013-08-29

申请号：US13882436

申请日：2012-08-08

申请人： Masanori Minamio ,  Tatsuo Sasaoka

发明人： Masanori Minamio ,  Tatsuo Sasaoka

IPC分类号： H01L21/48 ,  H01L23/495

CPC分类号： H01L21/4842 ,  B23K20/023 ,  B23K20/16 ,  B23K20/227 ,  B23K20/233 ,  B23K35/002 ,  B23K35/004 ,  B23K35/007 ,  B23K2101/18 ,  B23K2101/42 ,  B23K2103/04 ,  B23K2103/10 ,  B23K2103/12 ,  H01L21/4825 ,  H01L21/4835 ,  H01L23/4334 ,  H01L23/495 ,  H01L23/49537 ,  H01L23/49575 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： First, an aqueous solution (103) containing an oxide film remover is disposed on a junction region of a first metal plate (101). Then, with the aqueous solution (103) remaining on the first metal plate (101), a second metal plate (102) is placed on the first metal plate (101). Thereafter, a load is applied to junction regions of the first metal plate (101) and the second metal plate (102) in the vertical direction, thereby joining the first metal plate (101) and the second metal plate (102) together to form a junction portion (110). In this manner, a joined body is manufactured.

摘要翻译： 首先，在第一金属板（101）的接合区域上设置含有氧化膜去除剂的水溶液（103）。 然后，在第一金属板（101）上残留有水溶液（103）的同时，将第二金属板（102）放置在第一金属板（101）上。 此后，在垂直方向上对第一金属板（101）和第二金属板（102）的接合区域施加负载，从而将第一金属板（101）和第二金属板（102）接合在一起形成 接合部分（110）。 以这种方式制造接合体。

公开(公告)号：US09030003B2

公开(公告)日：2015-05-12

申请号：US13697886

申请日：2012-03-26

申请人： Masanori Minamio ,  Tatsuo Sasaoka

发明人： Masanori Minamio ,  Tatsuo Sasaoka

IPC分类号： H01L23/495 ,  H01L23/10 ,  H01L23/433 ,  H01L21/56 ,  H01L23/00

CPC分类号： H01L23/49558 ,  H01L21/565 ,  H01L21/566 ,  H01L23/29 ,  H01L23/4334 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49586 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An encapsulated semiconductor device includes: a first conduction path formative plate (1); a second conduction path formative plate (5) joined to the first conduction path formative plate; a power element (12) bonded to the first conduction path formative plate; a heatsink (14) held by the first conduction path formative plate with an insulation sheet (13) interposed between the heatsink and the first conduction path formative plate; and an encapsulation resin (9) configured to encapsulate the first and second conduction path formative plates. A through hole (3) or a lead gap (1b) is formed in a region of the first conduction path formative plate in contact with the insulation sheet. The insulation sheet is press-fitted into the through hole or the lead gap.

摘要翻译： 封装的半导体器件包括：第一导电路径形成板（1）; 连接到第一传导路径形成板的第二传导路径形成板（5） 功率元件（12），其接合到所述第一传导路径形成板; 由所述第一导电路径形成板保持的散热片（14），其间插入在所述散热器和所述第一导电路径形成板之间的绝缘片（13） 以及被配置为封装所述第一和第二导电路径形成板的封装树脂（9）。 在与绝缘片接触的第一传导路径形成板的区域中形成有通孔（3）或引线间隙（1b）。 绝缘片被压配合到通孔或引线间隙中。

公开(公告)号：US09013029B2

公开(公告)日：2015-04-21

申请号：US13882436

申请日：2012-08-08

申请人： Masanori Minamio ,  Tatsuo Sasaoka

发明人： Masanori Minamio ,  Tatsuo Sasaoka

IPC分类号： H01L23/495 ,  H01L21/48 ,  H01L23/433 ,  B23K20/02 ,  B23K20/16 ,  B23K20/227 ,  B23K20/233 ,  B23K35/00

CPC分类号： H01L21/4842 ,  B23K20/023 ,  B23K20/16 ,  B23K20/227 ,  B23K20/233 ,  B23K35/002 ,  B23K35/004 ,  B23K35/007 ,  B23K2101/18 ,  B23K2101/42 ,  B23K2103/04 ,  B23K2103/10 ,  B23K2103/12 ,  H01L21/4825 ,  H01L21/4835 ,  H01L23/4334 ,  H01L23/495 ,  H01L23/49537 ,  H01L23/49575 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A joined body which is formed by, first, an aqueous solution containing an oxide film remover is disposed on a junction region of a first metal plate. Then, with the aqueous solution remaining on the first metal plate, a second metal plate is placed on the first metal plate. Thereafter, a load is applied to junction regions of the first metal plate and the second metal plate in the vertical direction, thereby joining the first metal plate and the second metal plate together to form a junction portion.

摘要翻译： 首先在含有氧化膜去除剂的水溶液中形成的接合体设置在第一金属板的接合区域上。 然后，将水溶液保留在第一金属板上，将第二金属板放置在第一金属板上。 此后，在垂直方向上对第一金属板和第二金属板的接合区域施加负载，从而将第一金属板和第二金属板接合在一起形成接合部。

公开(公告)号：US20130056885A1

公开(公告)日：2013-03-07

申请号：US13697886

申请日：2012-03-26

申请人： Masanori Minamio ,  Tatsuo Sasaoka

发明人： Masanori Minamio ,  Tatsuo Sasaoka

IPC分类号： H01L23/36 ,  H01L21/56

CPC分类号： H01L23/49558 ,  H01L21/565 ,  H01L21/566 ,  H01L23/29 ,  H01L23/4334 ,  H01L23/49537 ,  H01L23/49562 ,  H01L23/49568 ,  H01L23/49575 ,  H01L23/49586 ,  H01L24/48 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An encapsulated semiconductor device includes: a first conduction path formative plate (1); a second conduction path formative plate (5) joined to the first conduction path formative plate; a power element (12) bonded to the first conduction path formative plate; a heatsink (14) held by the first conduction path formative plate with an insulation sheet (13) interposed between the heatsink and the first conduction path formative plate; and an encapsulation resin (9) configured to encapsulate the first and second conduction path formative plates. A through hole (3) or a lead gap (1b) is formed in a region of the first conduction path formative plate in contact with the insulation sheet. The insulation sheet is press-fitted into the through hole or the lead gap.

摘要翻译： 封装的半导体器件包括：第一导电路径形成板（1）; 连接到第一传导路径形成板的第二传导路径形成板（5） 功率元件（12），其接合到所述第一传导路径形成板; 由所述第一导电路径形成板保持的散热片（14），其间插入在所述散热器和所述第一导电路径形成板之间的绝缘片（13） 以及被配置为封装所述第一和第二导电路径形成板的封装树脂（9）。 在与绝缘片接触的第一传导路径形成板的区域中形成有通孔（3）或引线间隙（1b）。 绝缘片被压配合到通孔或引线间隙中。

公开(公告)号：US09246073B2

公开(公告)日：2016-01-26

申请号：US13000784

申请日：2009-06-18

申请人： Tatsuo Sasaoka ,  Kaori Toyoda ,  Kentaro Nishiwaki ,  Hiroki Ikeuchi ,  Hiroshi Nasu

发明人： Tatsuo Sasaoka ,  Kaori Toyoda ,  Kentaro Nishiwaki ,  Hiroki Ikeuchi ,  Hiroshi Nasu

IPC分类号： B23K31/02 ,  H01L33/62 ,  B23K35/02 ,  B23K1/00 ,  H01L23/00 ,  H01L33/64 ,  H05K3/32 ,  H01L21/56 ,  H01L31/024 ,  H05K3/40

CPC分类号： H01L33/62 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/025 ,  H01L21/563 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L31/024 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/16225 ,  H01L2224/29076 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83207 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/351 ,  H05K3/321 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/10106 ,  H05K2201/10166 ,  H05K2201/2036 ,  H05K2203/1131 ,  H05K2203/1178 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2224/29298 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00014

摘要： A mounting structure is provided that can allow gaseous matter generated when performing a heat treatment to escape to outside efficiently. A mounting structure 10 includes a substrate 1 having electrodes 2a and 2b, an electronic component 3 having electrodes 21a and 21b, joints 15a and 15b that electrically connect the electrodes 2a and 2b of the substrate 1 and the electrodes 21a and 21b of the electronic component 3 and also fix the electronic component 3 to the surface of the substrate 1, and a convex portion 4 that abuts against the electrode 2a of the substrate 1 and the electrode 21a of the electronic component 3 and is used as a spacer.

摘要翻译： 提供一种安装结构，其可以允许当执行热处理时产生的气体有效地逸出到外部。 安装结构10包括具有电极2a和2b的基板1，具有电极21a和21b的电子部件3，将基板1的电极2a和2b与电子部件的电极21a和21b电连接的接头15a和15b 并且还将电子部件3固定到基板1的表面，以及与基板1的电极2a和电子部件3的电极21a抵接并用作间隔件的凸部4。

公开(公告)号：US20110114706A1

公开(公告)日：2011-05-19

申请号：US13000784

申请日：2009-06-18

申请人： Tatsuo Sasaoka ,  Kaori Toyoda ,  Kentaro Nishiwaki ,  Hiroki Ikeuchi ,  Hiroshi Nasu

发明人： Tatsuo Sasaoka ,  Kaori Toyoda ,  Kentaro Nishiwaki ,  Hiroki Ikeuchi ,  Hiroshi Nasu

IPC分类号： B23K31/02 ,  H05K3/32

CPC分类号： H01L33/62 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/025 ,  H01L21/563 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L31/024 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/0401 ,  H01L2224/06102 ,  H01L2224/16225 ,  H01L2224/29076 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/8314 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83207 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8384 ,  H01L2224/83851 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0106 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0665 ,  H01L2924/0781 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/351 ,  H05K3/321 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/10106 ,  H05K2201/10166 ,  H05K2201/2036 ,  H05K2203/1131 ,  H05K2203/1178 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01014 ,  H01L2224/29298 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2924/00014

摘要： A mounting structure is provided that can allow gaseous matter generated when performing a heat treatment to escape to outside efficiently. A mounting structure 10 includes a substrate 1 having electrodes 2a and 2b, an electronic component 3 having electrodes 21a and 21b, joints 15a and 15b that electrically connect the electrodes 2a and 2b of the substrate 1 and the electrodes 21a and 21b of the electronic component 3 and also fix the electronic component 3 to the surface of the substrate 1, and a convex portion 4 that abuts against the electrode 2a of the substrate 1 and the electrode 21a of the electronic component 3 and is used as a spacer.

摘要翻译： 提供一种安装结构，其可以允许当执行热处理时产生的气体有效地逸出到外部。 安装结构10包括具有电极2a和2b的基板1，具有电极21a和21b的电子部件3，将基板1的电极2a和2b与电子部件的电极21a和21b电连接的接头15a和15b 并且还将电子部件3固定到基板1的表面，以及与基板1的电极2a和电子部件3的电极21a抵接并用作间隔件的凸部4。

公开(公告)号：US06474538B1

公开(公告)日：2002-11-05

申请号：US09691247

申请日：2000-10-19

申请人： Takahiro Yonezawa ,  Akihiro Yamamoto ,  Hiroyuki Kiyomura ,  Tetsuya Tokunaga ,  Tatsuo Sasaoka ,  Masahiko Hashimoto

发明人： Takahiro Yonezawa ,  Akihiro Yamamoto ,  Hiroyuki Kiyomura ,  Tetsuya Tokunaga ,  Tatsuo Sasaoka ,  Masahiko Hashimoto

IPC分类号： B23K3102

CPC分类号： H01L24/85 ,  H01L24/45 ,  H01L24/78 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/78268 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2224/48 ,  H01L2924/00 ,  H01L2924/20759 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/00015

摘要： A higher speed moving device moves a capillary at high speed. A low inertial moving and pressing device moves and presses the capillary with low inertia. The high speed motion, and the moving and pressing motion with the low inertia are carried out independently of each other. Thus, an inertia at the low inertial moving and pressing device is reduced, whereby an impact force when a melt ball is driven by the low inertial moving and pressing device into contact with an electrode of a semiconductor integrated circuit is restricted, thus enabling stable formation for minute bumps. On the other hand, operations other than pressing the melt ball to the electrode and joining the melt ball are conducted by driving the capillary by the higher speed moving device, so that productivity is improved.

摘要翻译： 高速移动装置高速移动毛细管。 低惯性移动和挤压装置以低惯性运动并按压毛细管。 高速运动以及具有低惯量的移动和按压运动彼此独立地进行。 因此，在低惯性运动和加压装置处的惯性减小，由此熔融球被低惯性运动和加压装置驱动与半导体集成电路的电极接触的冲击力受到限制，从而能够稳定地形成 微小的颠簸。 另一方面，通过用高速移动装置驱动毛细管来进行将熔融球压入电极并接合熔融球的操作，从而提高生产率。

公开(公告)号：US20080192423A1

公开(公告)日：2008-08-14

申请号：US11817991

申请日：2006-03-07

申请人： Koichi Nagai ,  Minoru Yamamoto ,  Ken Takano ,  Tatsuo Sasaoka ,  Kazumichi Shimizu

发明人： Koichi Nagai ,  Minoru Yamamoto ,  Ken Takano ,  Tatsuo Sasaoka ,  Kazumichi Shimizu

IPC分类号： H05K7/00 ,  H01L23/12 ,  H01L21/58

CPC分类号： H01L25/0657 ,  H01L23/5385 ,  H01L23/5387 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2225/06517 ,  H01L2225/0652 ,  H01L2225/06551 ,  H01L2225/06579 ,  H01L2924/00014 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A plurality of film substrates (2) having a bare chip (1) mounted on one side or both sides are joined into a laminated state by joint portions (3) and are attached to a motherboard (4) through junction by a joint portion (8) at a location off the mounting areas of the bare chips (1), thereby achieving a lower profile, higher lamination, and higher capacity.

摘要翻译： 具有安装在一侧或两侧的裸芯片（1）的多个薄膜基板（2）通过接合部（3）接合成层压状态，并且通过接合部（3）连接到主板（4） 8）在裸芯片（1）的安装区域的位置处，从而实现较低的轮廓，更高的层压和更高的容量。