公开(公告)号：US08123881B2

公开(公告)日：2012-02-28

申请号：US12248204

申请日：2008-10-09

Applicant: Damon K. Cox ,  Todd J. Egan ,  Michael X. Yang ,  Jeffrey C. Hudgens

Inventor： Damon K. Cox ,  Todd J. Egan ,  Michael X. Yang ,  Jeffrey C. Hudgens

IPC: B32B37/00

CPC classification number: H01L21/68 ,  H01L24/80 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T29/53091 ,  Y10T29/53174 ,  Y10T29/53178 ,  Y10T156/10 ,  Y10T156/1702

Abstract: A method, a system and a computer readable medium having a set of instructions stored thereon for die-to-robot alignment for die-to-substrate bonding are described. First, a robot is aligned with a substrate to provide a pre-aligned robot. Next, a die is aligned with the pre-aligned robot to provide a robot-aligned die. Finally, the robot-aligned die is bonded to a region of the substrate. The substrate is held stationary immediately following the aligning of the robot with the substrate and at least until the robot-aligned die is bonded to the region of the substrate.

Abstract translation: 描述了一种方法，系统和计算机可读介质，其具有存储在其上的用于管芯到基板结合的管芯到机器人对准的一组指令。 首先，机器人与基板对准以提供预对准的机器人。 接下来，模具与预对准机器人对准以提供机器人对准的模具。 最后，将机器人对准的管芯结合到衬底的区域。 在机器人与基板对准之后，基板保持静止，并且至少直到机器人对准的管芯结合到基板的区域。

公开(公告)号：US20100311237A1

公开(公告)日：2010-12-09

申请号：US12846253

申请日：2010-07-29

Applicant: Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

Inventor： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

IPC: H01L21/44 ,  H01L21/4763

CPC classification number: C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

Abstract: A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

Abstract translation: 公开了一种在基片上形成材料的方法。 在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度 等离子体退火工艺。 随后在氮化钽层上沉积含金属的层。

公开(公告)号：US07820026B2

公开(公告)日：2010-10-26

申请号：US11403566

申请日：2006-04-13

Applicant: Hooman Hafezi ,  Aron Rosenfeld ,  Michael X. Yang

Inventor： Hooman Hafezi ,  Aron Rosenfeld ,  Michael X. Yang

IPC: C25D5/34

CPC classification number: H01L21/76868 ,  H01L21/288 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76873

Abstract: Generally, the process includes depositing a barrier layer on a feature formed in a dielectric layer, decorating the barrier layer with a metal, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier layer formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

Abstract translation: 通常，该方法包括在形成在电介质层中的特征上沉积阻挡层，用金属装饰阻挡层，进行接枝过程，引发铜层，然后通过使用大块铜填充工艺来填充该特征。 根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层具有期望的粘合性能，并且证明在形成在衬底上的制造器件中增强的电迁移和应力迁移。

公开(公告)号：US20090162970A1

公开(公告)日：2009-06-25

申请号：US11961126

申请日：2007-12-20

Applicant: Michael X. Yang

Inventor： Michael X. Yang

IPC: H01L31/0368 ,  H01L31/0376

CPC classification number: H01L31/1868 ,  H01L31/046 ,  Y02E10/50 ,  Y02P70/521

Abstract: An approach for material modification in solar cell fabrication with ion doping is described. In one embodiment, there is a method of forming a thin-film solar cell. In this embodiment, a substrate is provided and a thin-film layer is deposited on the substrate. The thin-film solar cell layer is exposed to an ion flux to passivate a defect.

Abstract translation: 描述了一种用于具有离子掺杂的太阳能电池制造中材料修饰的方法。 在一个实施例中，存在形成薄膜太阳能电池的方法。 在本实施例中，提供基板并且在基板上沉积薄膜层。 薄膜太阳能电池层暴露于离子通量以钝化缺陷。

公开(公告)号：US20090126851A1

公开(公告)日：2009-05-21

申请号：US12248204

申请日：2008-10-09

Applicant: Damon K. Cox ,  Todd J. Egan ,  Michael X. Yang ,  Jeffrey C. Hudgens

Inventor： Damon K. Cox ,  Todd J. Egan ,  Michael X. Yang ,  Jeffrey C. Hudgens

IPC: B32B37/12

CPC classification number: H01L21/68 ,  H01L24/80 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01322 ,  H01L2924/14 ,  H01L2924/1433 ,  Y10T29/53091 ,  Y10T29/53174 ,  Y10T29/53178 ,  Y10T156/10 ,  Y10T156/1702

Abstract: A method, a system and a computer readable medium having a set of instructions stored thereon for die-to-robot alignment for die-to-substrate bonding are described. First, a robot is aligned with a substrate to provide a pre-aligned robot. Next, a die is aligned with the pre-aligned robot to provide a robot-aligned die. Finally, the robot-aligned die is bonded to a region of the substrate. The substrate is held stationary immediately following the aligning of the robot with the substrate and at least until the robot-aligned die is bonded to the region of the substrate.

Abstract translation: 描述了一种方法，系统和计算机可读介质，其具有存储在其上的用于管芯到基板结合的管芯到机器人对准的一组指令。 首先，机器人与基板对准以提供预对准的机器人。 接下来，模具与预对准机器人对准以提供机器人对准的模具。 最后，将机器人对准的管芯结合到衬底的区域。 在机器人与基板对准之后，基板保持静止，并且至少直到机器人对准的管芯结合到基板的区域。

公开(公告)号：US06939804B2

公开(公告)日：2005-09-06

申请号：US10299212

申请日：2002-11-18

Applicant: Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

Inventor： Ken K. Lai ,  Jeong Soo Byun ,  Frederick C. Wu ,  Ramanujapuran A. Srinivas ,  Avgerinos Gelatos ,  Mei Chang ,  Moris Kori ,  Ashok K. Sinha ,  Hua Chung ,  Hongbin Fang ,  Alfred W. Mak ,  Michael X. Yang ,  Ming Xi

IPC: C23C16/14 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC classification number: C23C16/45525 ,  C23C16/0281 ,  C23C16/08 ,  C23C16/14 ,  C23C16/45523 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

Abstract: Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.

公开(公告)号：US06939801B2

公开(公告)日：2005-09-06

申请号：US10319788

申请日：2002-12-13

Applicant: Hua Chung ,  Ling Chen ,  Vincent W. Ku ,  Michael X. Yang ,  Gongda Yao

Inventor： Hua Chung ,  Ling Chen ,  Vincent W. Ku ,  Michael X. Yang ,  Gongda Yao

IPC: C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC classification number: H01L21/76843 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76844

Abstract: A method to selectively deposit a barrier layer on dielectric material that surrounds one or more metal interconnects on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the dielectric material formed on the substrate in a process chamber.

Abstract translation: 公开了一种选择性地将阻挡层沉积在围绕衬底上的一个或多个金属互连的电介质材料上的方法。 使用包括预定数量的沉积循环，然后进行吹扫步骤的循环沉积工艺，将选择性地沉积在金属膜上。 每个沉积循环包括在处理室中在形成在基底上的电介质材料上交替地吸附含难熔金属的前体和还原气体。

公开(公告)号：US06660126B2

公开(公告)日：2003-12-09

申请号：US09798251

申请日：2001-03-02

Applicant: Anh N. Nguyen ,  Michael X. Yang ,  Ming Xi ,  Hua Chung ,  Anzhong Chang ,  Xiaoxiong Yuan ,  Siqing Lu

Inventor： Anh N. Nguyen ,  Michael X. Yang ,  Ming Xi ,  Hua Chung ,  Anzhong Chang ,  Xiaoxiong Yuan ,  Siqing Lu

IPC: H05H100

CPC classification number: C23C16/45544 ,  C23C16/4401 ,  C23C16/4411 ,  C23C16/452 ,  H01L21/67017

Abstract: A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

公开(公告)号：US06423949B1

公开(公告)日：2002-07-23

申请号：US09314845

申请日：1999-05-19

Applicant: Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

Inventor： Steven Aihua Chen ,  Henry Ho ,  Michael X. Yang ,  Bruce W. Peuse ,  Karl Littau ,  Yu Chang

IPC: H05B368

CPC classification number: H01L21/67103

Abstract: A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

公开(公告)号：US09012334B2

公开(公告)日：2015-04-21

申请号：US13396311

申请日：2012-02-14

Applicant: Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

Inventor： Sean M. Seutter ,  Michael X. Yang ,  Ming Xi

IPC: H01L21/469 ,  C23C16/455 ,  C23C16/34 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

Abstract: A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.

Abstract translation: 公开了一种在衬底上形成材料的方法。 在一个实施例中，该方法包括在设置在等离子体处理室中的衬底上形成氮化钽层，通过将衬底顺序地暴露于钽前体和氮前体，然后通过暴露衬底来降低氮化钽层的氮浓度 等离子体退火工艺。 随后在氮化钽层上沉积含金属的层。