-
1.发明授权Semiconductor device package having a jumper chip and method of fabricating the same 有权具有跳线芯片的半导体器件封装及其制造方法公开(公告)号：US08222726B2
公开(公告)日：2012-07-17
申请号：US12748843
申请日：2010-03-29
CPC分类号： H01L25/0657 , H01L23/13 , H01L23/3121 , H01L23/48 , H01L24/05 , H01L24/17 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/83 , H01L25/0652 , H01L2224/0401 , H01L2224/13099 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48599 , H01L2224/4899 , H01L2224/49175 , H01L2224/838 , H01L2225/0651 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01033 , H01L2924/014 , H01L2924/0781 , H01L2924/07811 , H01L2924/10253 , H01L2924/15157 , H01L2924/181 , H01L2924/30105 , H01L2924/30107 , H01L2924/00 , H01L2924/00012 , H01L2224/85399 , H01L2224/05599
摘要： A semiconductor device package and a method of fabricating the same are provided. The semiconductor device package includes a substrate, a first chip, a jumper chip, a plurality of first bonding wires and a plurality of second bonding wires. The substrate has a plurality of contact pads. The first chip is disposed and electrically connected to the substrate via the first bonding wires. The jumper chip is disposed on the first chip and has a plurality of metal pads. Each of the metal pads is electrically connected to two contact pads of the substrate via two second bonding wires, respectively.
摘要翻译： 提供半导体器件封装及其制造方法。 半导体器件封装包括衬底，第一芯片，跳线芯片，多个第一接合线和多个第二接合线。 衬底具有多个接触焊盘。 第一芯片通过第一接合线布置并电连接到基板。 跳线芯片设置在第一芯片上并且具有多个金属焊盘。 每个金属焊盘分别经由两个第二接合线电连接到衬底的两个接触焊盘。
-
公开(公告)号：US08368216B2
公开(公告)日：2013-02-05
申请号：US12872644
申请日：2010-08-31
IPC分类号： H01L23/538 , H01L21/60 , H01L23/488
CPC分类号： H01L21/6835 , H01L21/563 , H01L21/568 , H01L23/3114 , H01L24/27 , H01L25/0652 , H01L25/50 , H01L2224/1184 , H01L2224/131 , H01L2224/1329 , H01L2224/16145 , H01L2224/2784 , H01L2224/73104 , H01L2224/73204 , H01L2224/81005 , H01L2224/81801 , H01L2224/8185 , H01L2224/831 , H01L2225/06513 , H01L2924/15311 , H01L2924/15321 , H01L2924/014
摘要： The present invention relates to a semiconductor package having at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface upon which the first metal bumps are disposed and a plurality of first signal coupling pads disposed adjacent to the first active surface. The second layer chip is electrically connected to the first layer chip, and includes a second active surface that faces the first active surface and a plurality of second signal coupling pads. The second signal coupling pads are capacitively coupled to the first signal coupling pads so as to provide proximity communication between the first layer chip and the second layer chip. The package body encapsulates the first layer chip, the first metal bumps, and the second layer chip, and the first metal bumps are partially exposed.
摘要翻译： 本发明涉及具有至少一个第一层芯片，多个第一金属凸块，至少一个第二层芯片和封装体的半导体封装。 第一层芯片包括设置有第一金属凸块的第一有源表面和与第一有源表面相邻设置的多个第一信号耦合焊盘。 第二层芯片电连接到第一层芯片，并且包括面向第一有源表面的第二有源表面和多个第二信号耦合焊盘。 第二信号耦合焊盘电容耦合到第一信号耦合焊盘，以便提供第一层芯片和第二层芯片之间的接近通信。 封装体封装第一层芯片，第一金属凸块和第二层芯片，并且第一金属凸块部分地露出。
-
公开(公告)号：US20110278739A1
公开(公告)日：2011-11-17
申请号：US12777442
申请日：2010-05-11
IPC分类号： H01L23/52
CPC分类号： H01L23/49827 , H01L23/147 , H01L23/48 , H01L23/481 , H01L24/48 , H01L25/0657 , H01L2224/05571 , H01L2224/05573 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2225/0651 , H01L2225/06513 , H01L2225/06531 , H01L2225/06541 , H01L2225/06548 , H01L2225/06568 , H01L2225/06572 , H01L2924/00014 , H01L2924/10253 , H01L2924/1815 , H01L2924/19104 , H01L2924/19105 , H01L2924/00 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention relates to a semiconductor package. The semiconductor package includes a substrate, a first chip and an interposer. The first chip is mechanically and electrically connected to the substrate. Some signal pads of the interposer are capacitively coupled to some signal pads of the first chip, so as to provide proximity communication between the first chip and the interposer. Whereby, the capacitively coupled signal pads can be made in fine pitch, and therefore the size of the semiconductor package is reduced and the density of the signal pads is increased.
摘要翻译： 本发明涉及半导体封装。 半导体封装包括衬底，第一芯片和插入器。 第一芯片机械地和电连接到基板。 插入器的一些信号焊盘电容耦合到第一芯片的一些信号焊盘，以便在第一芯片和插入器之间提供接近通信。 由此，电容耦合的信号焊盘可以以细间距制成，因此半导体封装的尺寸减小，信号焊盘的密度增加。
-
公开(公告)号：US08421242B2
公开(公告)日：2013-04-16
申请号：US12651087
申请日：2009-12-31
IPC分类号： H01L23/48
CPC分类号： H01L23/16 , H01L23/13 , H01L23/3121 , H01L23/48 , H01L23/562 , H01L24/17 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/91 , H01L25/0652 , H01L25/0657 , H01L2224/13099 , H01L2224/16145 , H01L2224/48091 , H01L2224/48227 , H01L2224/49175 , H01L2224/73207 , H01L2224/73265 , H01L2224/83192 , H01L2224/838 , H01L2225/06517 , H01L2225/06531 , H01L2225/06562 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/12044 , H01L2924/15787 , H01L2924/30107 , H01L2924/00 , H01L2924/3512 , H01L2224/45099 , H01L2224/05599
摘要： A semiconductor package is provided. The semiconductor package includes an organic substrate, a stiffness layer, and a chip subassembly. The stiffness layer is formed on the organic substrate. The chip subassembly is disposed on the stiffness layer. The chip subassembly includes at least a first chip, a second chip, and a third chip. The second chip is disposed between the first chip and the third chip in a stacked orientation. The first chip, the second chip, and the third chip have the function of proximity communication.
摘要翻译： 提供半导体封装。 半导体封装包括有机衬底，刚度层和芯片子组件。 刚性层形成在有机基底上。 芯片组件设置在刚度层上。 芯片子组件至少包括第一芯片，第二芯片和第三芯片。 第二芯片以堆叠取向布置在第一芯片和第三芯片之间。 第一芯片，第二芯片和第三芯片具有接近通信的功能。
-
5.发明授权Semiconductor device package having a buffer structure and method of fabricating the same 有权具有缓冲结构的半导体器件封装及其制造方法公开(公告)号：US08274149B2
公开(公告)日：2012-09-25
申请号：US12749191
申请日：2010-03-29
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L21/563 , H01L23/48 , H01L23/5389 , H01L23/562 , H01L24/73 , H01L24/92 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L2224/131 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/30155 , H01L2224/30181 , H01L2224/73103 , H01L2224/73153 , H01L2224/73203 , H01L2224/73204 , H01L2224/92143 , H01L2224/92242 , H01L2224/97 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07811 , H01L2924/00014 , H01L2924/01014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device package and a method of fabricating the same are disclosed. The semiconductor device package includes a substrate, a buffer structure, two active chips and a bridge chip. The substrate has a cavity, a first surface and a second surface opposite to the first surface. The cavity is extended from the first surface toward the second surface, and the buffer structure is disposed in the cavity. The active chips are disposed on and electrically connected to the first surface and around the cavity. The active chips both have a first active surface. The bridge chip is disposed in the cavity and above the buffer structure. The bridge chip has a second active surface, the second active surface faces the first active surfaces and is partially overlapped with the first active surfaces, the bridge chip is used for providing a proximity communication between the active chips.
摘要翻译： 公开了一种半导体器件封装及其制造方法。 半导体器件封装包括衬底，缓冲结构，两个有源芯片和桥接芯片。 衬底具有空腔，第一表面和与第一表面相对的第二表面。 空腔从第一表面延伸到第二表面，并且缓冲结构设置在空腔中。 有源芯片设置在第一表面上并且电连接到第一表面并且围绕空腔。 活性芯片都具有第一活性表面。 桥芯片设置在空腔中并在缓冲结构上方。 桥芯片具有第二有源表面，第二有源表面面向第一有源表面并且与第一有源表面部分地重叠，桥芯片用于提供有源芯片之间的邻近通信。
-
公开(公告)号：US08222733B2
公开(公告)日：2012-07-17
申请号：US12729034
申请日：2010-03-22
CPC分类号： H01L25/0652 , H01L23/053 , H01L25/50 , H01L2224/16225 , H01L2924/15311 , H01L2924/15331 , H01L2924/19105
摘要： A first substrate has a first surface facing a second surface of the second substrate. The active chips are disposed on and electrically connected to the first surface, and spaced apart from each other by an interval, wherein the active chips respectively have a first active surface. The bridge chip is mechanically and electrically connected to the second surface, and has a second active surface partially overlapped with the first active surfaces of the active chips, such that the bridge chip is used for providing a proximity communication between the active chips. The connection structure is disposed between the first surface and the second surface for combining the first substrate and the second substrate.
摘要翻译： 第一基板具有面向第二基板的第二表面的第一表面。 有源芯片设置在第一表面上并电连接到第一表面，并且间隔彼此间隔开，其中有源芯片分别具有第一有源表面。 桥芯片机械地和电连接到第二表面，并且具有与有源芯片的第一有源表面部分地重叠的第二有源表面，使得桥接芯片用于提供有源芯片之间的邻近通信。 连接结构设置在第一表面和第二表面之间，用于组合第一基板和第二基板。
-
公开(公告)号：US20120091575A1
公开(公告)日：2012-04-19
申请号：US12905756
申请日：2010-10-15
CPC分类号： H01L23/48 , H01L24/02 , H01L24/13 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/73 , H01L24/81 , H01L24/83 , H01L25/0657 , H01L2224/02371 , H01L2224/02381 , H01L2224/0401 , H01L2224/14155 , H01L2224/16225 , H01L2224/2919 , H01L2224/2929 , H01L2224/29294 , H01L2224/293 , H01L2224/32105 , H01L2224/32145 , H01L2224/32225 , H01L2224/33183 , H01L2224/73103 , H01L2224/73203 , H01L2224/81191 , H01L2224/83192 , H01L2224/83815 , H01L2224/83851 , H01L2224/83903 , H01L2225/06517 , H01L2225/06531 , H01L2225/06551 , H01L2225/06555 , H01L2924/014 , H01L2924/00012
摘要： The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a substrate, at least one first chip, a dielectric layer and at least one second chip. The first chip is attached and electrically connected to the substrate. The first chip includes a first active surface and a plurality of first signal coupling pads. The first signal coupling pads are disposed adjacent to the first active surface. The dielectric layer is disposed on the first active surface. The second chip is attached and electrically connected to the substrate by metal bumps. The second chip includes a second active surface and a plurality of second signal coupling pads. The second active surface contacts the dielectric layer. The second signal coupling pads are disposed adjacent to the second active surface, and capacitively coupled to the first signal coupling pads of the first chip, so as to provide proximity communication between the first chip and the second chip. Whereby, the gap between the first signal coupling pads of the first chip and the second signal coupling pads of the second chip is controlled by the thickness of the dielectric layer. Therefore, the mass-production yield of the semiconductor package is increased.
摘要翻译： 半导体封装及其制造方法技术领域本发明涉及半导体封装及其制造方法。 半导体封装包括衬底，至少一个第一芯片，电介质层和至少一个第二芯片。 第一芯片被附接并电连接到基板。 第一芯片包括第一有源表面和多个第一信号耦合焊盘。 第一信号耦合焊盘设置成与第一有源表面相邻。 电介质层设置在第一有源表面上。 第二芯片通过金属凸块附接和电连接到基板。 第二芯片包括第二有源表面和多个第二信号耦合焊盘。 第二活性表面接触电介质层。 第二信号耦合焊盘设置成与第二有源表面相邻，并且电容耦合到第一芯片的第一信号耦合焊盘，以便提供第一芯片和第二芯片之间的接近通信。 由此，第一芯片的第一信号耦合焊盘与第二芯片的第二信号耦合焊盘之间的间隙由电介质层的厚度来控制。 因此，半导体封装的批量生产量增加。
-
公开(公告)号：US20120049360A1
公开(公告)日：2012-03-01
申请号：US12872644
申请日：2010-08-31
IPC分类号： H01L23/538 , H01L21/60
CPC分类号： H01L21/6835 , H01L21/563 , H01L21/568 , H01L23/3114 , H01L24/27 , H01L25/0652 , H01L25/50 , H01L2224/1184 , H01L2224/131 , H01L2224/1329 , H01L2224/16145 , H01L2224/2784 , H01L2224/73104 , H01L2224/73204 , H01L2224/81005 , H01L2224/81801 , H01L2224/8185 , H01L2224/831 , H01L2225/06513 , H01L2924/15311 , H01L2924/15321 , H01L2924/014
摘要： The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes at least one first layer chip, a plurality of first metal bumps, at least one second layer chip and a package body. The first layer chip includes a first active surface and a plurality of first signal coupling pads. The first signal coupling pads are disposed adjacent to the first active surface. The first metal bumps are disposed on the first active surface of the first layer chip. The second layer chip is electrically connected to the first layer chip, and includes a second active surface and a plurality of second signal coupling pads. The second active surface faces the first active surface of the first layer chip. The second signal coupling pads are disposed adjacent to the second active surface, and capacitively coupled to the first signal coupling pads of the first layer chip, so as to provide proximity communication between the first layer chip and the second layer chip. The package body encapsulates the first layer chip, the first metal bumps and the second layer chip, and the first metal bumps are partially exposed. Whereby, the bonding strength between the first layer chip and the second layer chip is increased because of the package body, so the yield of the semiconductor package is increased.
摘要翻译： 半导体封装及其制造方法技术领域本发明涉及半导体封装及其制造方法。 半导体封装包括至少一个第一层芯片，多个第一金属凸块，至少一个第二层芯片和封装体。 第一层芯片包括第一有源表面和多个第一信号耦合焊盘。 第一信号耦合焊盘设置成与第一有源表面相邻。 第一金属凸块设置在第一层芯片的第一有源表面上。 第二层芯片电连接到第一层芯片，并且包括第二有源表面和多个第二信号耦合焊盘。 第二活性表面面向第一层芯片的第一活性表面。 第二信号耦合焊盘设置成与第二有源表面相邻，并且电容耦合到第一层芯片的第一信号耦合焊盘，以便提供第一层芯片和第二层芯片之间的邻近通信。 封装体封装第一层芯片，第一金属凸块和第二层芯片，并且第一金属凸块部分地露出。 因此，由于封装体，第一层芯片和第二层芯片之间的结合强度增加，所以半导体封装的产量增加。
-
公开(公告)号：US08072064B1
公开(公告)日：2011-12-06
申请号：US12819796
申请日：2010-06-21
IPC分类号： H01L21/00
CPC分类号： H01L23/48 , H01L23/481 , H01L24/48 , H01L25/0657 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2225/06513 , H01L2225/06531 , H01L2225/06541 , H01L2924/00014 , H01L2924/1815 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention relates to a semiconductor package and a method for making the same. The semiconductor package includes a first chip and a second chip. The first chip comprises a first active surface, at least one first non-top metal layer and a plurality of first signal coupling pads. The first non-top metal layer is disposed adjacent to and spaced apart from the first active surface by a second distance. The first signal coupling pads are disposed on the first non-top metal layer. The second chip is electrically connected to the first chip. The second chip comprises a second active surface, at least one second non-top metal layer and a plurality of third signal coupling pads. The second active surface faces the first active surface of the first chip. The second non-top metal layer is disposed adjacent to and spaced apart from the second active surface by a fourth distance. The third signal coupling pads are disposed on the second non-top metal layer and capacitively coupled to the first signal coupling pads of the first chip, so as to provide proximity communication between the first chip and the second chip. Whereby, the gap variation between the first signal coupling pads of the first chip and the third signal coupling pads of the second chip is under stringent control of the second distance and the fourth distance. Therefore, the mass-production yield of the semiconductor package is increased.
摘要翻译： 半导体封装及其制造方法技术领域本发明涉及半导体封装及其制造方法。 半导体封装包括第一芯片和第二芯片。 第一芯片包括第一有源表面，至少一个第一非顶部金属层和多个第一信号耦合焊盘。 第一非顶部金属层设置成与第一有源表面相邻并间隔开第二距离。 第一信号耦合焊盘设置在第一非顶部金属层上。 第二芯片电连接到第一芯片。 第二芯片包括第二有源表面，至少一个第二非顶部金属层和多个第三信号耦合焊盘。 第二活性表面面向第一芯片的第一有效表面。 第二非顶部金属层被布置成与第二有源表面相邻并且与第二有源表面间隔开第四距离。 第三信号耦合焊盘设置在第二非顶部金属层上，并电容耦合到第一芯片的第一信号耦合焊盘，从而提供第一芯片与第二芯片之间的接近通信。 由此，第一芯片的第一信号耦合焊盘与第二芯片的第三信号耦合焊盘之间的间隙变化受到第二距离和第四距离的严格控制。 因此，半导体封装的批量生产量增加。
-
公开(公告)号：US20110233764A1
公开(公告)日：2011-09-29
申请号：US12749191
申请日：2010-03-29
IPC分类号： H01L23/488 , H01L21/60
CPC分类号： H01L21/563 , H01L23/48 , H01L23/5389 , H01L23/562 , H01L24/73 , H01L24/92 , H01L24/97 , H01L25/0652 , H01L25/0655 , H01L2224/131 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/30155 , H01L2224/30181 , H01L2224/73103 , H01L2224/73153 , H01L2224/73203 , H01L2224/73204 , H01L2224/92143 , H01L2224/92242 , H01L2224/97 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/07811 , H01L2924/00014 , H01L2924/01014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device package and a method of fabricating the same are disclosed. The semiconductor device package includes a substrate, a buffer structure, two active chips and a bridge chip. The substrate has a cavity, a first surface and a second surface opposite to the first surface. The cavity is extended from the first surface toward the second surface, and the buffer structure is disposed in the cavity. The active chips are mechanically disposed on and electrically connected to the first surface and around the cavity, wherein the active chips both have a first active surface. The bridge chip is disposed in the cavity and above the buffer structure, wherein the bridge chip has a second active surface, the second active surface faces the first active surfaces and is partially overlapped with the first active surfaces, the bridge chip is used for providing a proximity communication between the active chips.
摘要翻译： 公开了一种半导体器件封装及其制造方法。 半导体器件封装包括衬底，缓冲结构，两个有源芯片和桥接芯片。 衬底具有空腔，第一表面和与第一表面相对的第二表面。 空腔从第一表面延伸到第二表面，并且缓冲结构设置在空腔中。 有源芯片被机械地设置在第一表面上并且电连接到第一表面并且围绕空腔，其中有源芯片都具有第一有源表面。 桥芯片设置在空腔中并且在缓冲结构上方，其中桥芯片具有第二有源表面，第二有源表面面向第一有源表面并与第一有源表面部分重叠，桥芯片用于提供 活动芯片之间的邻近通信。
-
-
-
-
-
-
-
-
-
搜索结果
40 条记录 (耗时 0.024 秒)
