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1.发明授权Semiconductor laser device having a transparent waveguide and a large second harmonic generation output 失效具有透明波导和大二次谐波产生输出的半导体激光器件
公开(公告)号：US5208827A
公开(公告)日：1993-05-04
申请号：US793647
申请日：1991-11-18
申请人： Misuzu Sagawa , Hiroaki Inoue , Kimio Tatsuno , Masahiro Ojima
发明人： Misuzu Sagawa , Hiroaki Inoue , Kimio Tatsuno , Masahiro Ojima
CPC分类号： H01S5/1032 , H01S5/026 , H01S5/0605 , H01S5/18 , H01S5/2232
摘要： A semiconductor laser device comprises a semiconductor laser which oscillates a fundamental wave, and a transparent waveguide which is installed substantially in parallel to a direction of a cavity of the semiconductor laser and integral with the semiconductor laser, where second harmonics of the fundamental wave travel through the transparent waveguide and are emitted therefrom. The semiconductor laser and the transparent waveguide have a refractive index in a prescribed range respectively, and an output of second harmonics being significantly high in comparison to the prior art can be obtained.
摘要翻译： 一种半导体激光装置包括：振荡基波的半导体激光器和透明波导，该透明波导基本上平行于半导体激光器的空腔的方向并与半导体激光器成一体，其中基波的二次谐波通过 透明波导并从其发射。 半导体激光器和透明波导分别具有在规定范围内的折射率，并且可以获得与现有技术相比显着高的二次谐波的输出。
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公开(公告)号：US5844931A
公开(公告)日：1998-12-01
申请号：US903881
申请日：1997-07-31
CPC分类号： H01S5/2231 , H01S5/16 , H01S5/168 , H01S5/22 , H01S5/3211 , H01S5/3213
摘要： A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.
摘要翻译： 半导体激光器，不会由于电涌而引起突然的故障。 由GaAs缓冲层形成的脊，与GaAs衬底晶格匹配的n-InGaP包层，应变量子阱有源层，与GaAs衬底晶格匹配的p-InGaP包层 在n-GaAs衬底上埋设n-InGaP电流型p型GaAs波导层，与GaAs衬底晶格匹配的p-InGaP包覆层和p-GaAs覆盖层， 阻挡层。 器件条纹由器件中的电流注入区域和小面附近的电流非注入区域构成。
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3.发明授权Semiconductor device having first and second semiconductor structures directly bonded to each other 失效具有彼此直接接合的第一和第二半导体结构的半导体器件
公开(公告)号：US5654583A
公开(公告)日：1997-08-05
申请号：US494228
申请日：1995-06-23
申请人： Yae Okuno , Kazuhisa Uomi , Masahiro Aoki , Misuzu Sagawa
发明人： Yae Okuno , Kazuhisa Uomi , Masahiro Aoki , Misuzu Sagawa
CPC分类号： H01S5/0215 , B82Y20/00 , H01S5/021 , H01S5/0217 , H01S5/0265 , H01S5/101 , H01S5/1243 , H01S5/2201 , H01S5/2275 , H01S5/3202 , H01S5/34306
摘要： The semiconductor device has a semiconductor structure directly bonded onto another semiconductor structure of a different kind from the former. These two semiconductor structures are arranged in such a way that their crystal structures in a cross section perpendicular to the bonded interface of the two semiconductor structures are different from each other or that their lattice orders are not equivalent. This can be applied to direct bonding of any combination of semiconductor structures in any crystallographic orientation relation. This also allows bonding of three or more kinds of semiconductor structures.
摘要翻译： 半导体器件具有直接结合到与前者不同种类的另一半导体结构上的半导体结构。 这两个半导体结构被布置成使得它们在垂直于两个半导体结构的键合界面的截面中的晶体结构彼此不同或它们的晶格次数不相等。 这可以应用于任何结晶取向关系中的任何半导体结构组合的直接结合。 这也允许三种或更多种半导体结构的结合。
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4.发明授权Semiconductor crystalline laminate structure, forming method of the same, and semiconductor device employing the same 失效半导体结晶层叠结构体及其形成方法以及使用其的半导体装置
公开(公告)号：US5495115A
公开(公告)日：1996-02-27
申请号：US287276
申请日：1994-08-08
申请人： Makoto Kudo , Tomoyoshi Mishima , Takuma Tanimoto , Misuzu Sagawa
发明人： Makoto Kudo , Tomoyoshi Mishima , Takuma Tanimoto , Misuzu Sagawa
IPC分类号： H01L21/20 , H01L21/338 , H01L29/205 , H01L29/778 , H01L29/812 , H01S5/00 , H01S5/042
CPC分类号： H01L29/7783 , H01L29/205
摘要： A semiconductor crystalline laminate structure wherein between a first semiconductor layer consisting of a first alloyed semiconductor and a second semiconductor layer which has an energy gap wider than that of the first alloyed semiconductor and a lattice constant smaller than that of the first alloyed semiconductor and consists of one semiconductor selected from a group of single-element semiconductor, compound semiconductor, and alloyed semiconductor which contain no semiconductor having a largest lattice constant among the semiconductor constituting the first alloyed semiconductor, a third semiconductor layer which consists of a second alloyed semiconductor having an energy gap wider than that of the first alloyed semiconductor and contains the semiconductor having a largest lattice constant among the semiconductors constituting the first alloyed semiconductor is formed in contact with these layers, a forming method for the semiconductor crystalline laminate structure, and a semiconductor device using the method are indicated.
摘要翻译： 一种半导体结晶层叠结构，其中在由第一合金半导体构成的第一半导体层和具有比所述第一合金化半导体的能隙宽的能隙的第二半导体层之间，并且晶格常数小于所述第一合金化半导体的晶格常数，并且由 从构成第一合金化半导体的半导体中的不包含具有最大晶格常数的半导体的一组单元件半导体，化合物半导体和合金化半导体中选出的一个半导体，由具有能量的第二合金化半导体构成的第三半导体层 构成第一合金化半导体的半导体中具有最大晶格常数的半导体的间隙与这些层接触形成，半导体结晶层叠结构的形成方法和半导体结晶层叠结构 指示使用该方法的电感器件。
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公开(公告)号：US5042046A
公开(公告)日：1991-08-20
申请号：US489282
申请日：1990-03-06
申请人： Misuzu Sagawa , Takashi Kajimura
发明人： Misuzu Sagawa , Takashi Kajimura
CPC分类号： H01S5/4031 , H01S5/10 , H01S5/024 , H01S5/0425 , H01S5/4068
摘要： A semiconductor laser device including a plurality of oscillation stripes so that phase locked oscillation can be generated at adjacent oscillation stripes is disclosed, in which device dummy regions for transmitting a current uncontributive to laser oscillation are arranged on both sides of an oscillation stripe region containing the oscillation stripes.
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公开(公告)号：US08036533B2
公开(公告)日：2011-10-11
申请号：US12254036
申请日：2008-10-20
IPC分类号： H04J14/02
CPC分类号： G02B6/4215 , G02B6/29367 , H04J14/02
摘要： An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.
摘要翻译： 准备了将多个发光元件安装在同一平面上的光学元件安装基板，准备从多个发光元件发出的多个光的透镜阵列和波长复用/解复用器件。 波长复用/解复用装置通常在透明基板的前面和后面平面上安装波长选择滤光器和反射镜。 这三个部件以期望的角度位置安装在包装内。 基于发光元件安装基板的厚度和角度确定波长多路复用/解复用装置的各个波长的光轴，并排列在水平面的直线上。 结果，如果各个发光元件被布置在专门由设计工作确定的光轴上，则可以执行光复用/解复用操作。
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公开(公告)号：US20090103923A1
公开(公告)日：2009-04-23
申请号：US12254036
申请日：2008-10-20
IPC分类号： H04J14/02
CPC分类号： G02B6/4215 , G02B6/29367 , H04J14/02
摘要： An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.
摘要翻译： 准备了将多个发光元件安装在同一平面上的光学元件安装基板，准备从多个发光元件发出的多个光的透镜阵列和波长复用/解复用器件。 波长复用/解复用装置通常在透明基板的前面和后面平面上安装波长选择滤光器和反射镜。 这三个部件以期望的角度位置安装在包装内。 基于发光元件安装基板的厚度和角度确定波长多路复用/解复用装置的各个波长的光轴，并排列在水平面的直线上。 结果，如果各个发光元件被布置在专门由设计工作确定的光轴上，则可以执行光复用/解复用操作。
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公开(公告)号：US5608750A
公开(公告)日：1997-03-04
申请号：US282312
申请日：1994-07-29
CPC分类号： H01S5/16 , H01S5/1082 , H01S5/166
摘要： A semiconductor laser device is provided which is designed to prevent end surface optical damage, thereby permitting an increase in the output of the semiconductor laser. To achieve this, an active layer at the light emitting end surface portion of the semiconductor laser device is recessed inwardly by a distance between 50 nm and 300 nm (depending on the amount of etching) from the end surfaces of the crystal layers lying on both sides of the active layer. The recess serves to improve the heat dissipation of the active layer portion. This results in improving the amount of light output of the semiconductor laser which is possible without causing optical damage. A method for making the device is also provided. This method permits achieving the above-noted advantages simply by adding an etching step to the conventional semiconductor laser fabrication process, without requiring special equipment or technique.
摘要翻译： 提供了一种半导体激光器件，其设计用于防止端面光学损伤，从而允许半导体激光器的输出增加。 为了实现这一点，在半导体激光器件的发光端面部分处的有源层从位于两者上的晶体层的端面向内凹入50nm至300nm之间的距离（取决于蚀刻量） 活动层的两侧。 该凹部用于改善有源层部分的散热。 这导致可以在不引起光学损伤的情况下改善半导体激光器的光输出量。 还提供了制造该装置的方法。 该方法简单地通过在常规的半导体激光器制造工艺中添加蚀刻步骤来实现上述优点，而不需要特殊的设备或技术。
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公开(公告)号：US5363393A
公开(公告)日：1994-11-08
申请号：US038402
申请日：1993-03-29
申请人： Kazuhisa Uomi , Misuzu Sagawa , Atsushi Takai
发明人： Kazuhisa Uomi , Misuzu Sagawa , Atsushi Takai
CPC分类号： H01S5/18361 , B82Y20/00 , H01S5/0207 , H01S5/18305 , H01S5/18308 , H01S5/18341 , H01S5/18369 , H01S5/2224 , H01S5/3054 , H01S5/3211 , H01S5/34306
摘要： A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a dielectric film multi-layer mirror and a p-type semiconductor multi-layer mirror on a semiconductor substrate. The energy .DELTA.Ec of conduction band discontinuity is higher than the energy .DELTA.Ev of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the p-type semiconductor multi-layer mirror. On the other hand, the energy .DELTA.Ev of valence band discontinuity is higher than the energy .DELTA.Ec of conduction band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the n-type semiconductor multi-layer mirror.
摘要翻译： 在半导体衬底上具有夹在电介质膜多层反射镜和p型半导体多层反射镜之间的至少一层发光活性层的叠层结构的表面发射半导体激光器。 导带不连续性的能量DELTA Ec高于构成p型半导体多层反射镜的至少两种具有不同折射率的半导体层之间的价带不连续性的能量DELTA Ev。 另一方面，价带不连续性的能量DELTA Ev高于构成n型半导体多层反射镜的至少两种具有不同折射率的半导体层之间的导带不连续性的能量DELTA Ec。
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