DRUM DESIGN FOR WEB PROCESSING
    1.
    发明申请
    DRUM DESIGN FOR WEB PROCESSING 审中-公开
    用于WEB处理的DRUM设计

    公开(公告)号:US20100147677A1

    公开(公告)日:2010-06-17

    申请号:US12607689

    申请日:2009-10-28

    IPC分类号: C23C14/34 C23C14/56

    摘要: A roll to roll system for depositing a material on a workpiece is provided. In one embodiment, the system includes a drum, which rotates about an axis that is transverse to a process direction, and a number of PVD deposition units. The drum further includes a peripheral surface that includes a groove having a recessed workpiece contact surface that is parallel to the axis and disposed between a first side wall and a second side wall. A portion of the recessed workpiece contact surface supports a section of the workpiece and the first and second side walls maintain the section of the workpiece on the portion of the recessed workpiece contact surface as the workpiece is moved along the process direction. The PVD deposition units are disposed across from some of the portion of the peripheral surface and continuously deposit the material across a width of some of the section of the workpiece.

    摘要翻译: 提供了一种用于在工件上沉积材料的卷对卷系统。 在一个实施例中,系统包括围绕横向于工艺方向的轴线旋转的滚筒和多个PVD沉积单元。 滚筒还包括外围表面,该外围表面包括凹槽,凹槽具有凹入的工件接触表面,其平行于轴线并且设置在第一侧壁和第二侧壁之间。 凹陷工件接触表面的一部分支撑工件的一部分,并且随着工件沿着工艺方向移动,第一和第二侧壁将工件的部分保持在凹入工件接触表面的部分上。 PVD沉积单元跨越外围表面的一些部分设置,并且将材料连续地沉积在工件的一些部分的宽度上。

    Method of forming contact layers on substrates
    3.
    发明授权
    Method of forming contact layers on substrates 有权
    在基片上形成接触层的方法

    公开(公告)号:US07704880B1

    公开(公告)日:2010-04-27

    申请号:US12190082

    申请日:2008-08-12

    IPC分类号: H01L21/44

    摘要: A method is provided for manufacturing removable contact structures on the surface of a substrate to conduct electricity from a contact member to the surface during electroprocessing. The method comprises forming a conductive layer on the surface. A predetermined region of the conductive layer is selectively coated by a contact layer so that the contact member touches the contact layer as the electroprocessing is performed on the conductive layer.

    摘要翻译: 提供了一种用于在基板的表面上制造可移除接触结构以在电加工期间将电从接触构件传导到表面的方法。 该方法包括在表面上形成导电层。 导电层的预定区域被接触层选择性地涂覆,使得当在导电层上进行电处理时,接触构件接触接触层。

    Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing
    6.
    发明授权
    Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing 有权
    用于全面电镀或电解抛光的与晶片表面电接触的方法和装置

    公开(公告)号:US06482307B2

    公开(公告)日:2002-11-19

    申请号:US09735546

    申请日:2000-12-14

    IPC分类号: C25D518

    摘要: Deposition of conductive material on or removal of conductive material from a wafer frontal side of a semiconductor wafer is performed by providing an anode having an anode area which is to face the wafer frontal side, and electrically connecting the wafer frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the wafer frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the wafer is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the wafer frontal side surface, in its entirety, is thus permitted.

    摘要翻译: 通过提供具有面向晶片正面的阳极区域的阳极和将晶片正面与至少一个电气电连接来进行导电材料沉积在半导体晶片的晶片正面上或从晶片正面去除导电材料 通过将电接触和晶片正面推动到彼此靠近来接触阳极区域外部。 在阳极和电接触之间施加电势,并且晶片相对于阳极和电触点移动。 因此允许在整个晶片正面侧面上进行全面电镀或电解抛光。

    Apparatus for processing surface of workpiece with small electrodes and surface contacts
    7.
    发明授权
    Apparatus for processing surface of workpiece with small electrodes and surface contacts 有权
    用于用小电极和表面接触处理工件表面的装置

    公开(公告)号:US07476304B2

    公开(公告)日:2009-01-13

    申请号:US10947628

    申请日:2004-09-21

    IPC分类号: C25D17/00 C25D5/00

    摘要: Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.

    摘要翻译: 通过提供具有正面与工件正面的阳极区域并将工件正面与至少一个电气电连接的阳极进行导电材料沉积在导电材料上或从半导体工件的工件正面去除导电材料 通过将电触点和工件正面推入彼此靠近,在阳极区域外部接触。 在阳极和电接触之间施加电位,并且工件相对于阳极和电触点移动。 因此允许在工件正面侧面上进行全面电镀或电解抛光。

    System for electropolishing and electrochemical mechanical polishing
    8.
    发明授权
    System for electropolishing and electrochemical mechanical polishing 有权
    电抛光和电化学机械抛光系统

    公开(公告)号:US07427337B2

    公开(公告)日:2008-09-23

    申请号:US10822424

    申请日:2004-04-12

    IPC分类号: B23H3/00 B23H3/02

    摘要: An apparatus for electropolishing a conductive layer on a wafer using a solution is disclosed. The apparatus comprises an electrode assembly immersed in the solution configured proximate to the conductive layer having a longitudinal dimension extending to at least a periphery of the wafer, the electrode assembly including an elongated contact electrode configured to receive a potential difference, an isolator adjacent the elongated contact electrode, and an elongated process electrode adjacent the isolator configured to receive the potential difference, a voltage supply is configured to supply the potential difference between the contact electrode and the process electrode to electropolish the conductive layer on the wafer.

    摘要翻译: 公开了一种使用溶液对晶片上的导电层进行电解抛光的装置。 该装置包括浸入在靠近导电层配置的溶液中的电极组件,其具有延伸至晶片的至少周边的纵向尺寸,电极组件包括构造成接收电位差的细长接触电极,邻近细长的隔离器 接触电极和邻近隔离器的细长工艺电极,其被配置为接收电位差,电压源被配置为提供接触电极和处理电极之间的电位差以对晶片上的导电层进行电解抛光。

    Providing electrical contact to the surface of a semiconductor workpiece during processing
    9.
    发明授权
    Providing electrical contact to the surface of a semiconductor workpiece during processing 有权
    在加工期间向半导体工件的表面提供电接触

    公开(公告)号:US07309413B2

    公开(公告)日:2007-12-18

    申请号:US10459321

    申请日:2003-06-10

    IPC分类号: C25D5/04 C25D7/12 C25F3/12

    摘要: Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

    摘要翻译: 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点,或者可以是导电焊盘的形式,并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时,导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转,从而可以对沉积的导电材料进行电蚀刻。