公开(公告)号：US06917103B2

公开(公告)日：2005-07-12

申请号：US10326555

申请日：2002-12-23

申请人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Shoji Miura

发明人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Shoji Miura

IPC分类号： H01L23/28 ,  H01L23/29 ,  H01L23/433 ,  H01L23/48 ,  H01L23/495 ,  H01L23/34

CPC分类号： H01L24/33 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor chip, a first heat sink, a second heat sink, and a mold resin. The first heat sink is electrically and thermally connected to a surface of the semiconductor chip for functioning as an electrode for the semiconductor chip and releasing the heat generated by the semiconductor chip. The second heat sink is electrically and thermally connected to another surface of the semiconductor chip for functioning as another electrode for the semiconductor chip and releasing the heat. The semiconductor chip and the first and second heat sinks are covered with the mold resin such that the heat sinks are exposed on a substantially flat surface of the mold resin.

摘要翻译： 半导体器件包括半导体芯片，第一散热器，第二散热器和模制树脂。 第一散热器电连接和热连接到半导体芯片的表面，用作半导体芯片的电极并释放由半导体芯片产生的热量。 第二散热器电连接和热连接到半导体芯片的另一个表面，用作半导体芯片的另一个电极并释放热量。 半导体芯片和第一和第二散热器被模制树脂覆盖，使得散热器暴露在模制树脂的基本平坦的表面上。

公开(公告)号：US06787898B2

公开(公告)日：2004-09-07

申请号：US10326555

申请日：2002-12-23

申请人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Shoji Miura

发明人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Shoji Miura

IPC分类号： H01L2334

CPC分类号： H01L24/33 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/32245 ,  H01L2224/371 ,  H01L2224/40245 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/1301 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor chip, a first heat sink, a second heat sink, and a mold resin. The first heat sink is electrically and thermally connected to a surface of the semiconductor chip for functioning as an electrode for the semiconductor chip and releasing the heat generated by the semiconductor chip. The second heat sink is electrically and thermally connected to another surface of the semiconductor chip for functioning as another electrode for the semiconductor chip and releasing the heat. The semiconductor chip and the first and second heat sinks are covered with the mold resin such that the heat sinks are exposed on a substantially flat surface of the mold resin.

摘要翻译： 半导体器件包括半导体芯片，第一散热器，第二散热器和模制树脂。 第一散热器电连接和热连接到半导体芯片的表面，用作半导体芯片的电极并释放由半导体芯片产生的热量。 第二散热器电连接和热连接到半导体芯片的另一个表面，用作半导体芯片的另一个电极并释放热量。 半导体芯片和第一和第二散热器被模制树脂覆盖，使得散热器暴露在模制树脂的基本平坦的表面上。

公开(公告)号：US07145254B2

公开(公告)日：2006-12-05

申请号：US10201556

申请日：2002-07-24

申请人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Kenji Yagi ,  Yasushi Ookura ,  Kuniaki Mamitsu ,  Kazuhito Nomura ,  Yutaka Fukuda

发明人： Naohiko Hirano ,  Takanori Teshima ,  Yoshimi Nakase ,  Kenji Yagi ,  Yasushi Ookura ,  Kuniaki Mamitsu ,  Kazuhito Nomura ,  Yutaka Fukuda

IPC分类号： H01L23/10 ,  H01L23/28

CPC分类号： H01L24/33 ,  H01L21/565 ,  H01L23/367 ,  H01L23/3736 ,  H01L23/4334 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/33 ,  H01L2224/33181 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83101 ,  H01L2224/83203 ,  H01L2224/83815 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/0132 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/30107 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device includes a semiconductor chip that generates heat in operation, a pair of heat sinks for cooling the chip, and a mold resin, in which the chip and the heat sinks are embedded. The thickness t1 of the chip and the thickness t2 of one of heat sinks that is joined to the chip using a solder satisfy the equation of t2/t1≧5. Furthermore, the thermal expansion coefficient α1 of the heat sinks and the thermal expansion coefficient α2 of the mold resin satisfy the equation of 0.5≦α2/α1≦1.5. In addition, the surface of the chip that faces the solder has a roughness Ra that satisfies the equation of Ra≦500 nm. Moreover, the solder is a Sn-based solder to suppress relaxation of a compressive stress in the chip, which is caused by the creeping of the solder.

摘要翻译： 半导体器件包括在工作中产生热的半导体芯片，用于冷却芯片的一对散热器和嵌入芯片和散热片的模制树脂。 使用焊料与芯片接合的芯片的厚度t 1和散热器之一的厚度t 2满足t 2 / t 1> = 5的等式。 此外，散热器的热膨胀系数α1和模制树脂的热膨胀系数α2满足0.5≤α2/α1<= 1.5的等式。 此外，面向焊料的芯片的表面具有满足Ra <= 500nm的等式的粗糙度Ra。 此外，焊料是Sn基焊料，以抑制由焊料蠕变引起的芯片中的压缩应力松弛。

公开(公告)号：US20070158850A1

公开(公告)日：2007-07-12

申请号：US11702498

申请日：2007-02-06

申请人： Naohiko Hirano ,  Nobuyuki Kato ,  Takanori Teshima ,  Yoshitsugu Sakamoto ,  Shoji Miura ,  Akihiro Niimi

发明人： Naohiko Hirano ,  Nobuyuki Kato ,  Takanori Teshima ,  Yoshitsugu Sakamoto ,  Shoji Miura ,  Akihiro Niimi

IPC分类号： H01L23/48

CPC分类号： H01L24/33 ,  H01L23/482 ,  H01L23/485 ,  H01L23/488 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.

摘要翻译： 一种模具型半导体器件，包括：包括半导体部件的半导体芯片; 金属层; 焊料层; 以及通过金属层和焊料层连接到半导体芯片的金属构件。 焊料层由屈服应力小于金属层的焊料制成。 即使当用树脂模具密封半导体芯片时，也防止金属层开裂。

公开(公告)号：US07193326B2

公开(公告)日：2007-03-20

申请号：US10859130

申请日：2004-06-03

申请人： Naohiko Hirano ,  Nobuyuki Kato ,  Takanori Teshima ,  Yoshitsugu Sakamoto ,  Shoji Miura ,  Akihiro Niimi

发明人： Naohiko Hirano ,  Nobuyuki Kato ,  Takanori Teshima ,  Yoshitsugu Sakamoto ,  Shoji Miura ,  Akihiro Niimi

IPC分类号： H01L23/48

CPC分类号： H01L24/33 ,  H01L23/482 ,  H01L23/485 ,  H01L23/488 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.

摘要翻译： 一种模具型半导体器件，包括：包括半导体部件的半导体芯片; 金属层; 焊料层; 以及通过金属层和焊料层连接到半导体芯片的金属构件。 焊料层由屈服应力小于金属层的焊料制成。 即使当用树脂模具密封半导体芯片时，也防止金属层开裂。

公开(公告)号：US07468318B2

公开(公告)日：2008-12-23

申请号：US11702498

申请日：2007-02-06

申请人： Naohiko Hirano ,  Nobuyuki Kato ,  Takanori Teshima ,  Yoshitsugu Sakamoto ,  Shoji Miura ,  Akihiro Niimi

发明人： Naohiko Hirano ,  Nobuyuki Kato ,  Takanori Teshima ,  Yoshitsugu Sakamoto ,  Shoji Miura ,  Akihiro Niimi

IPC分类号： H01L21/4763

CPC分类号： H01L24/33 ,  H01L23/482 ,  H01L23/485 ,  H01L23/488 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a conductive layer and a connecting member. The method includes: forming the semiconductor part on a semiconductor substrate so that a cell portion is provided; forming the conductive layer on the substrate; forming a first resist layer to cover a part of the conductive layer corresponding to the cell portion; etching the conductive layer with the first resist layer as a mask so that a first conductive layer is provided; removing the first resist layer and forming a second conductive layer to cover a surface and an edge of the first conductive layer. The second conductive layer has a Young's modulus equal to or larger than the semiconductor substrate.

摘要翻译： 提供了一种用于制造模具型半导体器件的方法。 该器件包括具有半导体部件和通过导电层和连接部件与芯片连接的金属部件的半导体芯片。 该方法包括：在半导体衬底上形成半导体部分以便提供电池部分; 在所述基板上形成所述导电层; 形成第一抗蚀剂层以覆盖对应于所述电池单元部分的所述导电层的一部分; 用第一抗蚀剂层作为掩模蚀刻导电层，从而提供第一导电层; 去除第一抗蚀剂层并形成第二导电层以覆盖第一导电层的表面和边缘。 第二导电层的杨氏模量等于或大于半导体衬底。

公开(公告)号：US07239016B2

公开(公告)日：2007-07-03

申请号：US10895947

申请日：2004-07-22

申请人： Naohiko Hirano ,  Nobuyuki Kato ,  Kuniaki Mamitsu ,  Yoshimi Nakase

发明人： Naohiko Hirano ,  Nobuyuki Kato ,  Kuniaki Mamitsu ,  Yoshimi Nakase

IPC分类号： H01L23/34

CPC分类号： H01L23/492 ,  H01L23/4334 ,  H01L23/562 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199

摘要： A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.

摘要翻译： 半导体器件包括发热元件; 接合部件; 第一和第二散热板，其通过接合构件设置在发热体的第一和第二侧上; 散热块，其通过所述接合构件设置在所述第一散热板和所述发热体之间; 和树脂模具。 散热块的厚度在0.5mm至1.5mm的范围内。 半导体器件具有高粘合部件的可靠性。

公开(公告)号：US20050077617A1

公开(公告)日：2005-04-14

申请号：US10895947

申请日：2004-07-22

申请人： Naohiko Hirano ,  Nobuyuki Kato ,  Kuniaki Mamitsu ,  Yoshimi Nakase

发明人： Naohiko Hirano ,  Nobuyuki Kato ,  Kuniaki Mamitsu ,  Yoshimi Nakase

IPC分类号： H01L21/60 ,  H01L23/00 ,  H01L23/36 ,  H01L23/42 ,  H01L23/433 ,  H01L23/492 ,  H01L23/58

CPC分类号： H01L23/492 ,  H01L23/4334 ,  H01L23/562 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0134 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15724 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19043 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01051 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199

摘要： A semiconductor device includes a heat generation element; a bonding member; first and second heat radiation plates disposed on first and second sides of the heat generation element through the bonding member; a heat radiation block disposed between the first heat radiation plate and the heat generation element through the bonding member; and a resin mold. The heat radiation block has a thickness in a range between 0.5 mm and 1.5 mm. The semiconductor device has high reliability of the bonding member.

摘要翻译： 半导体器件包括发热元件; 接合部件; 第一和第二散热板，其通过接合构件设置在发热体的第一和第二侧上; 散热块，其通过所述接合构件设置在所述第一散热板和所述发热体之间; 和树脂模具。 散热块的厚度在0.5mm至1.5mm的范围内。 半导体器件具有高粘合部件的可靠性。

公开(公告)号：US07019395B2

公开(公告)日：2006-03-28

申请号：US10802720

申请日：2004-03-18

申请人： Naohiko Hirano ,  Takanori Teshima

发明人： Naohiko Hirano ,  Takanori Teshima

IPC分类号： H01L23/34

CPC分类号： H01L23/4338 ,  H01L23/473 ,  H01L2224/32245 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor module includes a fixed type and transformable type coolers and a flat semiconductor package sandwiched between the coolers. A relative positional relationship of the semiconductor package is fixed with the fixed type cooler, but variable with the transformable type cooler. The transformable type cooler includes a transformable member of a metal thin plate covering a coolant chamber. The semiconductor module includes a sandwiching mechanism causing the fixed type cooler to be pressed toward the transformable type cooler. Fastening adjustment screws of the sandwiching mechanism causes a pressing frame to approach a cooler body of the transformable type cooler. Therefore, the semiconductor package is pressed via the fixed type cooler while the transformable member is slightly transformed. This enhances a degree of contact between the semiconductor package and transformable member via an insulating member.

摘要翻译： 半导体模块包括固定型和可变形型冷却器以及夹在冷却器之间的扁平半导体封装。 半导体封装的相对位置关系用固定式冷却器固定，但是可变形冷却器可变。 可变形型冷却器包括覆盖冷却剂室的金属薄板的可变形构件。 半导体模块包括使固定式冷却器朝向可变形型冷却器按压的夹持机构。 夹紧机构的紧固调节螺钉使得压框接近可变形式冷却器的较冷体。 因此，通过固定式冷却器对半导体封装进行压制，而可变形构件稍微变形。 这通过绝缘构件增强了半导体封装和可变形构件之间的接触程度。

公开(公告)号：US20050073042A1

公开(公告)日：2005-04-07

申请号：US10802720

申请日：2004-03-18

申请人： Naohiko Hirano ,  Takanori Teshima

发明人： Naohiko Hirano ,  Takanori Teshima

IPC分类号： H01L23/40 ,  H01L23/433 ,  H01L23/473 ,  H01L23/34

CPC分类号： H01L23/4338 ,  H01L23/473 ,  H01L2224/32245 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/00

摘要： A semiconductor module includes a fixed type and transformable type coolers and a flat semiconductor package sandwiched between the coolers. A relative positional relationship of the semiconductor package is fixed with the fixed type cooler, but variable with the transformable type cooler. The transformable type cooler includes a transformable member of a metal thin plate covering a coolant chamber. The semiconductor module includes a sandwiching mechanism causing the fixed type cooler to be pressed toward the transformable type cooler. Fastening adjustment screws of the sandwiching mechanism causes a pressing frame to approach a cooler body of the transformable type cooler. Therefore, the semiconductor package is pressed via the fixed type cooler while the transformable member is slightly transformed. This enhances a degree of contact between the semiconductor package and transformable member via an insulating member.

摘要翻译： 半导体模块包括固定型和可变形型冷却器以及夹在冷却器之间的扁平半导体封装。 半导体封装的相对位置关系用固定式冷却器固定，但是可变形冷却器是可变的。 可变形型冷却器包括覆盖冷却剂室的金属薄板的可变形构件。 半导体模块包括使固定式冷却器朝向可变形型冷却器按压的夹持机构。 夹紧机构的紧固调节螺钉使得压框接近可变形式冷却器的较冷体。 因此，通过固定式冷却器对半导体封装进行压制，而可变形构件稍微变形。 这通过绝缘构件增强了半导体封装和可变形构件之间的接触程度。