摘要:
According to one embodiment, a memory device includes a memory area; and a control circuit, in response to a first command, configured to read out data from the memory area without outputting the data to a data line, subsequently, in response to a second command, configured to output the data to the data line, if the first command is not received after receiving an active command, in response to the second command, configured to output the data read out from the memory area to the data line.
摘要:
According to one embodiment, a semiconductor memory includes a memory area; an error detection circuit which detect an error of first data output from the memory area; and a control circuit which control the memory area and the error detection circuit. When the error is detected in the first data, the control circuit starts precharge of a bit line at a timing when a first period has elapsed from a start of a first operation of the memory area for output of the first data. When the error is not detected in the first data, the control circuit starts the precharge at a timing when a second period has elapsed from the start of the first operation, the second period is shorter than the first period.
摘要:
A multilayer ceramic capacitor includes first internal electrodes extending to a first end surface of a ceramic element assembly, a plurality of second internal electrodes extending to a second end surface, floating internal electrodes arranged so as to overlap the first and second internal electrodes with ceramic layers disposed therebetween to define first and second effective regions, inner conductors that are elongated from the first end surface beyond a region that overlaps the first effective region in the direction of layering, and a relationship X1
摘要:
It is an object of the present invention to predict a destination easily, and a destination display method for displaying a predicted destination. The destination prediction apparatus of the present invention includes: a behavior history acquiring unit that acquires, the behavior history; a visit history acquiring unit that acquires the visit history; a similar behavior date-and-time extractor that performs a similarity determination between a behavior within a predetermined period prior to a present date and time and a behavior in another period with reference to the behavior history and that extracts a date and time of the behavior in another period determined to be similar as a similar behavior date and time from the behavior history; and a destination candidate extractor that extracts, as a destination candidate, a location visited within a predetermined period before or after the similar behavior date and time from the visit history.
摘要:
To provide a transfer apparatus correcting a curl of a card efficiently while preventing the card from deteriorating, a printing apparatus includes a transfer section transferring a transfer surface of a transfer film to the card, a rotating unit reversing the front side and back side of the card in two-sided transfer, a decurl mechanism correcting a curl of the card with the transfer surface transferred in the transfer section, and a control section controlling the decurl mechanism. The control section controls the decurl mechanism such that a correction amount for the card with the transfer surface transferred to one surface in two-sided transfer is smaller than a correction amount for the card in one-sided transfer, and that the total sum of correction amounts for respective surfaces of the card in two-sided transfer is smaller than the correction amount for the card in one-sided transfer.
摘要:
According to one embodiment, there is provided a semiconductor memory device comprising: a memory cell array including a plurality of memory cells configured to be able to store data; a control circuit configured to control a write operation of data in the memory cell array, and an initialization operation of the memory cell array; and a register control circuit configured to receive a first command including second information for selecting first information relating to control of a cycle of a clock from completion of the write operation of data in the memory cell array to initialization of the memory cell array.
摘要:
A semiconductor memory device includes: banks each including a memory cell array; word lines connected to rows of each of the banks; an address latch circuit configured to latch a full address for specifying one of the word lines, the full address including a first address and a second address; and a control circuit configured to ignore a reset operation for the first address as a target of a set operation, and overwrite the first address in accordance with the set operation when receiving a first command for specifying a reset operation for a bank and a set operation for the first address.
摘要:
A printing system and printing apparatus are provided with improvements in the image quality of an image formed on a printing medium, a peel off region (PO) wherein a transfer layer of a transfer film is not transferred is set corresponding to a card, modified printing data is generated by modifying a gray-scale value of printing data inside a region that is larger than the PO region by predetermined dimensions and including the PO region in the printing data of Y, M, C and Bk into a gray-scale value of 0, an image is formed on the transfer film by heating a thermal head for an image formation panel of an ink ribbon according to the modified printing data. The transfer layer is peeled off by heating the thermal head for a peel off panel of the ink ribbon according to position information of the PO region.
摘要:
A control apparatus for a switching device which suppresses surge voltages at the time of current shutoff of a switching device to protect from overcurrents although the switching device is not in an overcurrent state, including a current sensor, a comparator, a timer latch, a control circuit, and a transistor. The current sensor detects the current of a switching device and outputs a detected voltage. The comparator outputs a signal when the detected voltage is equal to or greater than a reference voltage. When the time duration of the output signal is equal to or greater than a setting time, the timer latch outputs a surge suppression detection signal, based on which the control circuit outputs to the transistor a driving signal to turn off the switching device. The reference voltage is smaller than a reference voltage used when detecting an overcurrent flowing in the switching device.
摘要:
A semiconductor memory device includes: banks each including a memory cell array; word lines connected to rows of each of the banks; an address latch circuit configured to latch a full address for specifying one of the word lines, the full address including a first address and a second address; and a control circuit configured to ignore a reset operation for the first address as a target of a set operation, and overwrite the first address in accordance with the set operation when receiving a first command for specifying a reset operation for a bank and a set operation for the first address.