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    METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS
    1.
    发明申请
    METHOD OF FORMING SEMICONDUCTOR DEVICES CONTAINING METAL CAP LAYERS 有权
    形成金属盖层的半导体器件的方法

    公开(公告)号：US20100029071A1

    公开(公告)日：2010-02-04

    申请号：US12182363

    申请日：2008-07-30

    申请人： Noel Russell ,  Frank M. Cerio, JR. ,  Gregory Herdt

    发明人： Noel Russell ,  Frank M. Cerio, JR. ,  Gregory Herdt

    IPC分类号： H01L21/425

    CPC分类号： H01L21/76849 ,  H01J2237/0812 ,  H01L21/02068 ,  H01L21/3115 ,  H01L21/76825 ,  H01L21/76834 ,  H01L21/76859 ,  H01L21/76886

    摘要： Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices containing metal cap layers are generally described herein. According to one embodiment, a method of forming a semiconductor device includes planarizing a top surface of a workpiece to form a substantially planar surface with conductive paths and dielectric regions, forming metal cap layers on the conductive paths, and exposing the top surface of the workpiece to a dopant source from a gas cluster ion beam (GCIB) to form doped metal cap layers on the conductive paths and doped dielectric layers on the dielectric regions. According to some embodiments the metal cap layers and the doped metal cap layers contain a noble metal selected from Pt, Au, Ru, Rh, Ir, and Pd.

    摘要翻译： 这里通常描述用于改善漏电性能并且使包含金属盖层的半导体器件中的电迁移最小化的方法的实施例。 根据一个实施例，一种形成半导体器件的方法包括平坦化工件的顶表面以形成具有导电路径和电介质区域的基本平坦的表面，在导电路径上形成金属帽层，并暴露工件的顶表面 到来自气体簇离子束（GCIB）的掺杂剂源，以在电介质区域上的导电路径上和掺杂的电介质层上形成掺杂金属盖层。 根据一些实施例，金属盖层和掺杂的金属盖层含有选自Pt，Au，Ru，Rh，Ir和Pd的贵金属。

    METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER
    3.
    发明申请
    METHOD FOR FORMING A RUTHENIUM METAL CAP LAYER 有权
    形成金属金属层的方法

    公开(公告)号：US20100015798A1

    公开(公告)日：2010-01-21

    申请号：US12173814

    申请日：2008-07-15

    申请人： Kenji Suzuki ,  Frank M. Cerio, JR. ,  Miho Jomen ,  Shigeru Mizuno ,  Yasushi Mizusawa ,  Tadahiro Ishizaka

    发明人： Kenji Suzuki ,  Frank M. Cerio, JR. ,  Miho Jomen ,  Shigeru Mizuno ,  Yasushi Mizusawa ,  Tadahiro Ishizaka

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76849 ,  C23C16/02 ,  C23C16/16 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/32134 ,  H01L21/32135 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76868 ,  H01L21/76883

    摘要： A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes providing a planarized patterned substrate containing a Cu metal surface and a dielectric layer surface, depositing first Ru metal on the Cu metal surface, and depositing additional Ru metal on the dielectric layer surface, where the amount of the additional Ru metal is less than the amount of the first Ru metal. The method further includes at least substantially removing the additional Ru metal from the dielectric layer surface to improve the selective formation of a Ru metal cap layer on the Cu metal surface. Other embodiments further include incorporating one or more types of modifier elements into the dielectric layer surface, the Cu metal surface, the Ru metal cap layer, or a combination thereof.

    摘要翻译： 将钌（Ru）金属盖层和改性的Ru金属覆盖层整合到半导体器件的铜（Cu）金属化中以改善块状Cu金属中的电迁移（EM）和应力迁移（SM）的方法。 在一个实施例中，该方法包括提供包含Cu金属表面和电介质层表面的平坦化图案化衬底，在Cu金属表面上沉积第一Ru金属，以及在电介质层表面上沉积额外的Ru金属，其中额外的量 Ru金属少于第一Ru金属的量。 该方法还包括从电介质层表面至少基本上去除额外的Ru金属，以改善在Cu金属表面上的Ru金属覆盖层的选择性形成。 其他实施例还包括将一种或多种类型的改性剂元素结合到电介质层表面，Cu金属表面，Ru金属覆盖层或其组合中。

    HYBRID IN-SITU DRY CLEANING OF OXIDIZED SURFACE LAYERS
    5.
    发明申请
    HYBRID IN-SITU DRY CLEANING OF OXIDIZED SURFACE LAYERS 有权
    氧化表面层的混合干燥清洁

    公开(公告)号：US20110212274A1

    公开(公告)日：2011-09-01

    申请号：US12714152

    申请日：2010-02-26

    申请人： Adam Selsley ,  Frank M. Cerio, JR.

    发明人： Adam Selsley ,  Frank M. Cerio, JR.

    IPC分类号： B05D3/10

    CPC分类号： C23C14/5826

    摘要： According to one embodiment, the method includes providing a substrate containing a metal-containing barrier layer having an oxidized surface layer, exposing the oxidized surface layer to a flow of a first process gas containing plasma-excited argon gas to activate the oxidized surface layer and applying substrate bias power during the exposing of the oxidized surface layer to the flow of the first process gas. The method further includes exposing the activated oxidized surface layer to a second process gas containing non-plasma-excited hydrogen gas, wherein the exposure to the first process gas, in addition to activating the oxidized surface layer, facilitates chemical reduction of the activated oxidized surface layer by the second process gas containing the hydrogen gas. A thickness of the metal-containing barrier layer is not substantially changed by the hybrid in-situ dry cleaning process.

    摘要翻译： 根据一个实施方案，该方法包括提供含有含氧化表面层的含金属阻挡层的基材，将氧化表面层暴露于含有等离子体激发的氩气的第一工艺气体的流动以活化氧化的表面层;以及 在将氧化的表面层暴露于第一工艺气体的流动期间施加衬底偏置功率。 该方法还包括将活化的氧化表面层暴露于含有非等离子体激发的氢气的第二工艺气体，其中暴露于第一工艺气体除了活化氧化的表面层之外，还促进活化的氧化表面的化学还原 通过含有氢气的第二工艺气体层。 通过混合原位干洗方法，实质上不能改变含金属阻挡层的厚度。

    SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES
    9.
    发明申请
    SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES 有权
    用于半导体器件的金属含有层的表面清洁和选择性沉积

    公开(公告)号：US20110244680A1

    公开(公告)日：2011-10-06

    申请号：US12749782

    申请日：2010-03-30

    申请人： Kazuhito Tohnoe ,  Frank M. Cerio, JR.

    发明人： Kazuhito Tohnoe ,  Frank M. Cerio, JR.

    IPC分类号： H01L21/3205

    CPC分类号： H01L21/67207 ,  H01L21/02074 ,  H01L21/3105 ,  H01L21/67184 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/7684 ,  H01L21/76849 ,  H01L21/76883

    摘要： A method is provided for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a planarized patterned substrate containing metal surfaces and dielectric layer surfaces with a residue formed thereon, removing the residue from the planarized patterned substrate, and depositing metal-containing cap layers selectively on the metal surfaces by exposing the dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor. The removing includes treating the planarized patterned substrate containing the residue with a reactant gas containing a hydrophobic functional group, and exposing the treated planarized patterned substrate to a reducing gas.

    摘要翻译： 提供了一种用于将含金属盖层整合到半导体器件的铜（Cu）金属化中的方法。 在一个实施例中，该方法包括提供包含金属表面和介电层表面的平坦化图案化衬底，其上形成有残留物，从平坦化图案化衬底去除残余物，以及通过暴露电介质来选择性地沉积在金属表面上的含金属盖层 层表面和金属表面到含有含金属的前体蒸气的沉积气体。 除去包括用含有疏水性官能团的反应气体处理含有残余物的平坦化图案化衬底，以及将经处理的平坦化图案化衬底暴露于还原气体。