公开(公告)号：US20050109276A1

公开(公告)日：2005-05-26

申请号：US10911208

申请日：2004-08-04

申请人： R. Iyer ,  Sean Seutter ,  Jacob Smith ,  Gregory Dibello ,  Alexander Tam ,  Binh Tran ,  Sanjeev Tandon

发明人： R. Iyer ,  Sean Seutter ,  Jacob Smith ,  Gregory Dibello ,  Alexander Tam ,  Binh Tran ,  Sanjeev Tandon

IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

CPC分类号： C23C16/4557 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45565

摘要： A method and apparatus for a CVD chamber that provides uniform heat distribution, efficient precursor delivery, uniform distribution of process and inert chemicals, and thermal management of residues in the chamber and exhaust surfaces by changing the mechanical design of a single wafer thermal CVD chamber. The improvements include a processing chamber comprising a chamber body and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on the chamber lid, the gas delivery system comprising a lid, an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, a heating element positioned to heat the adapter ring to a desired temperature, and a temperature controlled exhaust system. The improvements also include a method for depositing a silicon nitride layer on a substrate, comprising vaporizing bis(tertiary-butylamino) silane, flowing the bis(tertiary-butylamino) silane into a processing chamber, flowing ammonia into a processing chamber, combining the two reactants in a mixer in the chamber lid, having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, flowing the bis(tertiary-butylamino) silane through a gas distribution plate into a processing region above a substrate. The improvements reduce defects across the surface of the substrate and improve product yield.

摘要翻译： 一种用于CVD室的方法和装置，其通过改变单个晶片热CVD室的机械设计来提供均匀的热分布，有效的前体输送，工艺和惰性化学品的均匀分布，以及腔室和排气表面中残留物的热管理。 该改进包括一个处理室，该处理室包括一个室主体和一个限定处理区域的室盖，设置在处理区域中的基板支撑件，安装在室盖上的气体输送系统，气体输送系统包括盖子，适配器环和 限定气体混合区域的两个阻挡板和紧固到接合环的面板，定位成将接合环加热到所需温度的加热元件和温度控制的排气系统。 该改进还包括在基底上沉积氮化硅层的方法，包括将双（叔丁基氨基）硅烷蒸发，将双（叔丁基氨基）硅烷流入处理室，将氨流入处理室，将两 在室盖中的混合器中的反应物，具有由适配环和至少两个阻挡板限定的附加混合区域，加热适配环，使双（叔丁基氨基）硅烷通过气体分布板流入上述加工区域 底物。 这些改进减少了衬底表面的缺陷并提高了产品的产率。

公开(公告)号：US20060009041A1

公开(公告)日：2006-01-12

申请号：US10885969

申请日：2004-07-06

申请人： R. Iyer ,  Andrew Lam ,  Yuji Maeda ,  Thomas Mele ,  Faran Nouri ,  Jacob Smith ,  Sean Seutter ,  Sanjeev Tandon ,  Randhir Singh Thakur ,  Sunderraj Thirupapuliyur

发明人： R. Iyer ,  Andrew Lam ,  Yuji Maeda ,  Thomas Mele ,  Faran Nouri ,  Jacob Smith ,  Sean Seutter ,  Sanjeev Tandon ,  Randhir Singh Thakur ,  Sunderraj Thirupapuliyur

IPC分类号： H01L21/302

CPC分类号： H01L21/324 ,  H01L29/1054 ,  H01L29/6656 ,  H01L29/7842 ,  H01L29/7843

摘要： An assembly comprises a multilayer nitride stack having nitride etch stop layers formed on top of one another, each of the nitride etch stop layers is formed using a film forming process. A method of making the multilayer nitride stack includes placing a substrate in a single wafer deposition chamber and thermally shocking the substrate momentarily prior to deposition. A first nitride etch stop layer is deposited over the substrate. A second nitride etch stop layer is deposited over the first nitride etch stop layer.

公开(公告)号：US20060286818A1

公开(公告)日：2006-12-21

申请号：US11155646

申请日：2005-06-17

申请人： Yaxin Wang ,  Yuji Maeda ,  Thomas Mele ,  Sean Seutter ,  Sanjeev Tandon ,  R. Iyer

发明人： Yaxin Wang ,  Yuji Maeda ,  Thomas Mele ,  Sean Seutter ,  Sanjeev Tandon ,  R. Iyer

IPC分类号： H01L21/471

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45553 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

摘要翻译： 本发明的实施方案通常提供一种沉积含硅膜的方法。 在一个实施例中，将含​​硅材料膜沉积在基板上的方法包括将含氮和碳的化学品流入沉积室，将含有硅 - 氮键的含硅源化学品流入处理室，并加热基板 置于室内至低于约550摄氏度的温度。 在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3 3）3 -N。

公开(公告)号：US20050255714A1

公开(公告)日：2005-11-17

申请号：US11152501

申请日：2005-06-14

申请人： R. Iyer ,  Sean Seutter ,  Sanjeev Tandon ,  Errol Sanchez ,  Shulin Wang

发明人： R. Iyer ,  Sean Seutter ,  Sanjeev Tandon ,  Errol Sanchez ,  Shulin Wang

IPC分类号： C23C16/34 ,  H01L21/31 ,  H01L21/318

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02208 ,  H01L21/02271 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R′2)—Si(R′2)—NR2 (amino(di)silanes), R3—Si—N═N═N (silyl azides), R′3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R′ comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

摘要翻译： 本发明的实施方案通常提供一种沉积含有硅（Si）和氮（N）的膜的方法。 在一个实施例中，该方法包括将设置在处理室中的基板加热至低于约650摄氏度的温度，使含氮气体流入处理室，使含硅气体流入处理室，并将 衬底上的含SiN层。 含硅气体是被鉴定为NR 2 -Si（R'2）-Si（R'2）-Si（R'2）-Si ）-NR 2（氨基（二）硅烷），R 3 -Si-NNN（甲硅烷基叠氮化物），R'3 -Si- NR-NR 2（甲硅烷基肼）或1,3,4,5,7,8-六甲基四硅氮烷，其中R和R'包含至少一个选自以下的官能团：卤素， 具有一个或多个双键的有机基团，具有一个或多个三键的有机基团，脂肪族烷基，环状烷基，芳族基团，有机硅基团，烷基氨基或含有N或Si的环状基团。

公开(公告)号：US20070111546A1

公开(公告)日：2007-05-17

申请号：US11273381

申请日：2005-11-12

申请人： R. Iyer ,  Sanjeev Tandon ,  Jacob Smith

发明人： R. Iyer ,  Sanjeev Tandon ,  Jacob Smith

IPC分类号： H01L21/31

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3081 ,  H01L21/3185

摘要： A method for fabricating a multiple layer silicon nitride film on a semiconductor substrate is provided herein. In one embodiment, a method for fabricating a multiple layer silicon nitride film on a semiconductor substrate includes providing a substrate over which the multiple layer silicon nitride film is to be formed; and forming the multiple layer silicon nitride film in a single processing reactor by: (a) depositing a base layer comprising silicon nitride on the base structure; (b) depositing a middle layer comprising a stress-controlling material on the base layer; and (c) depositing a top layer comprising silicon nitride on the middle layer. The stress-controlling material selectively increases or reduces the stress of the multiple layer silicon nitride film as compared to silicon nitride alone.

摘要翻译： 本发明提供一种在半导体衬底上制造多层氮化硅膜的方法。 在一个实施例中，在半导体衬底上制造多层氮化硅膜的方法包括提供要在其上形成多层氮化硅膜的衬底; 以及通过以下步骤在单个处理反应器中形成所述多层氮化硅膜：（a）在所述基底结构上沉积包括氮化硅的基底层; （b）在所述基底层上沉积包含应力控制材料的中间层; 和（c）在中间层上沉积包含氮化硅的顶层。 与单独的氮化硅相比，应力控制材料选择性地增加或减小了多层氮化硅膜的应力。

公开(公告)号：US20070111538A1

公开(公告)日：2007-05-17

申请号：US11273380

申请日：2005-11-12

申请人： R. Iyer ,  Sanjeev Tandon ,  Kangzhan Zhang ,  Rubi Lapena ,  Yuji Maeda

发明人： R. Iyer ,  Sanjeev Tandon ,  Kangzhan Zhang ,  Rubi Lapena ,  Yuji Maeda

IPC分类号： H01L21/31

CPC分类号： H01L21/3081 ,  C23C16/345 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/3185

摘要： Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer comprising silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer comprising silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.

摘要翻译： 本文提供了在半导体衬底上制造氮化硅叠层的方法的实施例。 在一个实施例中，在半导体衬底上制造氮化硅堆叠的方法包括：使用选择性地控制基底层的应力的第一组工艺条件，在衬底上沉积包括氮化硅的基底层; 以及使用选择性地控制上层的抗氧化性和折射率中的至少一种的第二组工艺条件沉积包括氮化硅的上层。

公开(公告)号：US20070087575A1

公开(公告)日：2007-04-19

申请号：US11253229

申请日：2005-10-17

申请人： R. Iyer ,  Sanjeev Tandon

发明人： R. Iyer ,  Sanjeev Tandon

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3185 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/31612 ,  H01L29/6656

摘要： Embodiments of methods for fabricating a spacer structure on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a spacer structure on a semiconductor substrate includes providing a substrate containing a base structure over which the spacer structure is to be formed. The spacer structure may be formed over the base structure by depositing a first layer comprising silicon nitride on the base structure, depositing a second layer comprising a silicon-based dielectric material on the first layer, and depositing a third layer comprising silicon nitride on the second layer. The first, second, and third layers are deposited in a single processing reactor.

公开(公告)号：US07473655B2

公开(公告)日：2009-01-06

申请号：US11155646

申请日：2005-06-17

申请人： Yaxin Wang ,  Yuji Maeda ,  Thomas C. Mele ,  Sean M. Seutter ,  Sanjeev Tandon ,  R. Suryanarayanan Iyer

发明人： Yaxin Wang ,  Yuji Maeda ,  Thomas C. Mele ,  Sean M. Seutter ,  Sanjeev Tandon ,  R. Suryanarayanan Iyer

IPC分类号： H01L21/31

CPC分类号： H01L21/3185 ,  C23C16/345 ,  C23C16/45525 ,  C23C16/45553 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/7834

摘要： Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

摘要翻译： 本发明的实施方案通常提供一种沉积含硅膜的方法。 在一个实施例中，将含​​硅材料膜沉积在基板上的方法包括将含氮和碳的化学品流入沉积室，将含有硅 - 氮键的含硅源化学品流入处理室，并加热基板 置于室内至低于约550摄氏度的温度。 在另一个实施方案中，含硅化学品是三甲基胺，含氮和碳的化学品是（CH 3）3 -N。

公开(公告)号：US07465669B2

公开(公告)日：2008-12-16

申请号：US11273380

申请日：2005-11-12

申请人： R. Suryanarayanan Iyer ,  Sanjeev Tandon ,  Kangzhan Zhang ,  Rubi Lapena ,  Yuji Maeda

发明人： R. Suryanarayanan Iyer ,  Sanjeev Tandon ,  Kangzhan Zhang ,  Rubi Lapena ,  Yuji Maeda

IPC分类号： H01L21/311

CPC分类号： H01L21/3081 ,  C23C16/345 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/31612 ,  H01L21/3185

摘要： Embodiments of methods for fabricating a silicon nitride stack on a semiconductor substrate are provided herein. In one embodiment, a method for fabricating a silicon nitride stack on a semiconductor substrate includes depositing a base layer including silicon nitride on the substrate using a first set of process conditions that selectively control the stress of the base layer; and depositing an upper layer including silicon nitride using a second set of process conditions that selectively control at least one of an oxidation resistance and a refractive index of the upper layer.

摘要翻译： 本文提供了在半导体衬底上制造氮化硅叠层的方法的实施例。 在一个实施例中，在半导体衬底上制造氮化硅叠层的方法包括：使用选择性地控制所述基底层的应力的第一组工艺条件，将包括氮化硅的基底层沉积在所述衬底上; 以及使用选择性地控制上层的抗氧化性和折射率中的至少一种的第二组工艺条件沉积包括氮化硅的上层。

公开(公告)号：US20080063798A1

公开(公告)日：2008-03-13

申请号：US11847158

申请日：2007-08-29

申请人： Shreyas Kher ,  Son Nguyen ,  Pravin Narwankar ,  Sanjeev Tandon ,  Steve Jumper ,  Vincent Sermona

发明人： Shreyas Kher ,  Son Nguyen ,  Pravin Narwankar ,  Sanjeev Tandon ,  Steve Jumper ,  Vincent Sermona

IPC分类号： C23C16/22

CPC分类号： C23C16/4404 ,  C23C16/34 ,  C23C16/405 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/45561 ,  C23C16/45582

摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.

摘要翻译： 本发明通常包括用于沉积高k电介质或金属栅极材料的装置，其中可以使用有毒的，易燃的或发火的前体。 排气管可以放置在液体前体或固体前体输送柜，气体面板和水蒸气发生器区域上。 排气管道允许技术人员访问设备，而不会过度暴露于可能在液体输送柜，气体面板和水蒸汽发生器区域内收集的有毒，自燃或可燃气体。