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公开(公告)号:US08961771B2
公开(公告)日:2015-02-24
申请号:US13559494
申请日:2012-07-26
申请人: Rajesh Baskaran , Robert W. Batz, Jr. , Bioh Kim , Tom L. Ritzdorf , John L. Klocke , Kyle M. Hanson
发明人: Rajesh Baskaran , Robert W. Batz, Jr. , Bioh Kim , Tom L. Ritzdorf , John L. Klocke , Kyle M. Hanson
CPC分类号: C25D7/12 , C25D5/00 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/12
摘要: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.
摘要翻译: 描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。 使用第一处理流体,阳极,第二处理流体和阳离子可渗透阻挡层对微特征工件进行电解处理。 阳离子可渗透阻隔层将第一处理流体与第二处理流体分离,同时允许某些阳离子物质在两种流体之间转移。 所描述的方法在反复电镀循环中产生沉积物,其在所需范围内具有沉积性质(例如电阻率)。
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公开(公告)号:US20120292194A1
公开(公告)日:2012-11-22
申请号:US13559494
申请日:2012-07-26
申请人: Rajesh Baskaran , Robert W. Batz, JR. , Bioh Kim , Tom L. Ritzdorf , John L. Klocke , Kyle M. Hanson
发明人: Rajesh Baskaran , Robert W. Batz, JR. , Bioh Kim , Tom L. Ritzdorf , John L. Klocke , Kyle M. Hanson
IPC分类号: C25D5/02
CPC分类号: C25D7/12 , C25D5/00 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/12
摘要: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.
摘要翻译: 描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。 使用第一处理流体,阳极,第二处理流体和阳离子可渗透阻挡层对微特征工件进行电解处理。 阳离子可渗透阻隔层将第一处理流体与第二处理流体分离,同时允许某些阳离子物质在两种流体之间转移。 所描述的方法在反复电镀循环中产生沉积物,其在所需范围内具有沉积性质(例如电阻率)。
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公开(公告)号:US08236159B2
公开(公告)日:2012-08-07
申请号:US11414145
申请日:2006-04-28
申请人: Rajesh Baskaran , Robert W. Batz, Jr. , Bioh Kim , Tom L. Ritzdorf , John L. Klocke , Kyle M. Hanson
发明人: Rajesh Baskaran , Robert W. Batz, Jr. , Bioh Kim , Tom L. Ritzdorf , John L. Klocke , Kyle M. Hanson
CPC分类号: C25D7/12 , C25D5/00 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/12
摘要: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and an anode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, an anode, a second processing fluid, and a cation permeable barrier layer. The cation permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain cationic species to transfer between the two fluids. The described processes produce deposits over repeated plating cycles that exhibit deposit properties (e.g., resistivity) within desired ranges.
摘要翻译: 描述了利用第一处理流体和阳极电解处理微特征工件的工艺和系统。 使用第一处理流体,阳极,第二处理流体和阳离子可渗透阻挡层对微特征工件进行电解处理。 阳离子可渗透阻隔层将第一处理流体与第二处理流体分离,同时允许某些阳离子物质在两种流体之间转移。 所描述的方法在反复电镀循环中产生沉积物,其在所需范围内具有沉积性质(例如电阻率)。
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公开(公告)号:US20120152751A1
公开(公告)日:2012-06-21
申请号:US13406387
申请日:2012-02-27
申请人: Rajesh Baskaran , Robert W. Batz, JR. , Bioh Kim , Tom L. Ritzdorf , John Lee Klocke , Kyle M. Hanson
发明人: Rajesh Baskaran , Robert W. Batz, JR. , Bioh Kim , Tom L. Ritzdorf , John Lee Klocke , Kyle M. Hanson
IPC分类号: C25D21/00
CPC分类号: C25D5/028 , C25D3/12 , C25D3/20 , C25D3/30 , C25D3/34 , C25D3/38 , C25D3/46 , C25D3/54 , C25D5/022 , C25D17/001 , C25D17/002 , C25D21/12 , C25F3/02 , H01L21/2885 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H05K3/423
摘要: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. Some of the described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.
摘要翻译: 描述了利用第一处理流体和对电极对微特征工件进行电解处理的工艺和系统。 使用第一处理流体,对电极,第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。 阴离子可渗透阻挡层将第一处理流体与第二处理流体分离,同时允许某些阴离子物质在两种流体之间转移。 所描述的一些方法中的一些在反复电镀循环中产生沉积物,其显示出所需范围内的电阻率值。
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公开(公告)号:US08852417B2
公开(公告)日:2014-10-07
申请号:US13406387
申请日:2012-02-27
申请人: Rajesh Baskaran , Robert W. Batz, Jr. , Bioh Kim , Tom L. Ritzdorf , John Lee Klocke , Kyle M. Hanson
发明人: Rajesh Baskaran , Robert W. Batz, Jr. , Bioh Kim , Tom L. Ritzdorf , John Lee Klocke , Kyle M. Hanson
IPC分类号: C25D17/02 , C25D7/12 , H01L21/288 , H01L21/768 , C25D17/00 , C25F3/02 , C25D5/02 , C25D3/38 , H05K3/42
CPC分类号: C25D5/028 , C25D3/12 , C25D3/20 , C25D3/30 , C25D3/34 , C25D3/38 , C25D3/46 , C25D3/54 , C25D5/022 , C25D17/001 , C25D17/002 , C25D21/12 , C25F3/02 , H01L21/2885 , H01L21/76846 , H01L21/76868 , H01L21/76873 , H05K3/423
摘要: Processes and systems for electrolytically processing a microfeature workpiece with a first processing fluid and a counter electrode are described. Microfeature workpieces are electrolytically processed using a first processing fluid, a counter electrode, a second processing fluid, and an anion permeable barrier layer. The anion permeable barrier layer separates the first processing fluid from the second processing fluid while allowing certain anionic species to transfer between the two fluids. Some of the described processes produce deposits over repeated plating cycles that exhibit resistivity values within desired ranges.
摘要翻译: 描述了利用第一处理流体和对电极对微特征工件进行电解处理的工艺和系统。 使用第一处理流体,对电极,第二处理流体和阴离子可渗透阻挡层对微特征工件进行电解处理。 阴离子可渗透阻挡层将第一处理流体与第二处理流体分离,同时允许某些阴离子物质在两种流体之间转移。 所描述的一些方法中的一些在反复电镀循环中产生沉积物,其显示出所需范围内的电阻率值。
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公开(公告)号:US07429537B2
公开(公告)日:2008-09-30
申请号:US11292823
申请日:2005-12-02
IPC分类号: H01L21/302
CPC分类号: H01L21/67051 , B08B3/02 , H01L21/67028
摘要: A method for rinsing and drying a workpiece includes placing the workpiece into a chamber and spinning the workpiece. A rinsing fluid, such as water, is applied onto the workpiece through a first outlet in the chamber, with the rinsing fluid moving outwardly towards the edge of the workpiece via centrifugal force, to rinse the workpiece. A drying fluid, such as an alcohol vapor, is applied onto the workpiece through the first outlet, with the drying fluid moving outwardly towards the edge of the workpiece via centrifugal force, to dry the workpiece. The drying fluid advantageously follows a meniscus of the rinsing fluid across the workpiece surface. The rinsing fluid, or the drying fluid, or both fluids, may be applied near or at a central area of the workpiece.
摘要翻译: 用于冲洗和干燥工件的方法包括将工件放置在室中并旋转工件。 冲洗流体例如水通过腔室中的第一出口施加到工件上,漂洗流体通过离心力向外移动到工件的边缘,以冲洗工件。 干燥流体,例如醇蒸汽,通过第一出口施加到工件上,干燥流体通过离心力向外移动到工件的边缘,以干燥工件。 干燥流体有利地沿着穿过工件表面的冲洗流体的弯液面。 冲洗流体或干燥流体或两种流体可以施加在工件的中心区域附近或其附近。
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公开(公告)号:US07399713B2
公开(公告)日:2008-07-15
申请号:US10632495
申请日:2003-07-31
申请人: Brian K. Aegerter , Curt T. Dundas , Tom L. Ritzdorf , Gary L. Curtis , Michael Jolley , Steven L. Peace
发明人: Brian K. Aegerter , Curt T. Dundas , Tom L. Ritzdorf , Gary L. Curtis , Michael Jolley , Steven L. Peace
IPC分类号: H01L21/302
CPC分类号: H01L21/6715 , C23F1/18 , C23F1/30 , H01L21/32134 , H01L21/67017 , H01L21/6708 , Y10S134/902 , Y10S438/906
摘要: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.
摘要翻译: 本发明提供了一种用于处理具有前侧,后侧和外周的工件的方法。 根据该过程,从前侧或后侧或工件中的至少一个的外周边缘选择性地施加或排除处理流体。 处理流体的排除和/或应用通过将一种或多种加工流体施加到工件上而发生,因为工件和相应的反应器围绕大致正交于被加工工件的面的中心的旋转轴旋转。 使用一种或多种加工流体的流量,流体压力和/或旋转速率来控制从外周边缘选择性地施加或排除处理流体的程度。
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公开(公告)号:US06632292B1
公开(公告)日:2003-10-14
申请号:US09672572
申请日:2000-09-28
IPC分类号: B08B700
CPC分类号: H01L21/6715 , C23F1/18 , C23F1/30 , H01L21/32134 , H01L21/67017 , H01L21/6708 , Y10S134/902 , Y10S438/906
摘要: This invention provides a process for treating a workpiece having a front side, a back side, and an outer perimeter. In accordance with the process, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides or the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece as the workpiece and corresponding reactor are spinning about an axis of rotation that is generally orthogonal to the center of the face of the workpiece being processed. The flow rate of the one or more processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.
摘要翻译: 本发明提供了一种用于处理具有前侧,后侧和外周的工件的方法。 根据该过程,从前侧或后侧或工件中的至少一个的外周边缘选择性地施加或排除处理流体。 处理流体的排除和/或应用通过将一种或多种加工流体施加到工件上而发生,因为工件和相应的反应器围绕大致正交于被加工工件的面的中心的旋转轴旋转。 使用一种或多种加工流体的流量,流体压力和/或旋转速率来控制从外周边缘选择性地施加或排除处理流体的程度。 PTEXT>
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公开(公告)号:US06413436B1
公开(公告)日:2002-07-02
申请号:US09437926
申请日:1999-11-10
申请人: Brian Aegerter , Curt T. Dundas , Michael Jolley , Tom L. Ritzdorf , Steven L. Peace , Gary L. Curtis , Raymon F. Thompson
发明人: Brian Aegerter , Curt T. Dundas , Michael Jolley , Tom L. Ritzdorf , Steven L. Peace , Gary L. Curtis , Raymon F. Thompson
IPC分类号: C23F102
CPC分类号: H01L21/67017 , C23F1/18 , H01L21/32134 , H01L21/6708 , Y10S438/928 , Y10S438/963
摘要: In a process for treating a workpiece such as a semiconductor wafer, a processing fluid is selectively applied or excluded from an outer peripheral margin of at least one of the front or back sides of the workpiece. Exclusion and/or application of the processing fluid occurs by applying one or more processing fluids to the workpiece while the workpiece and a reactor holding the workpiece are spinning. The flow rate of the processing fluids, fluid pressure, and/or spin rate are used to control the extent to which the processing fluid is selectively applied or excluded from the outer peripheral margin.
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