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    Process for chemical vapor deposition of main group metal nitrides
    1.
    发明授权
    Process for chemical vapor deposition of main group metal nitrides 失效
    主要金属氮化物的化学气相沉积工艺

    公开(公告)号：US5178911A

    公开(公告)日：1993-01-12

    申请号：US790576

    申请日：1991-11-08

    申请人： Roy G. Gordon ,  David Hoffman ,  Umar Riaz

    发明人： Roy G. Gordon ,  David Hoffman ,  Umar Riaz

    IPC分类号： C23C16/34

    CPC分类号： C23C16/34

    摘要： A process for depositing a thin film of a main group metal nitride, e.g., AlN, GaN or Sn.sub.3 N.sub.4, is provided. The vapors of a main group metal amido compound are mixed with ammonia gas and allowed to react near a substrate heated to a temperature in the range of 100.degree. C. to 400.degree. C. resulting in deposition of a film on the substrate.

    摘要翻译： 提供了沉积诸如AlN，GaN或Sn 3 N 4等主要金属氮化物的薄膜的工艺。 将主族金属氨基化合物的蒸气与氨气混合并使其在加热到100℃至400℃的温度的基板附近反应，导致在基材上沉积膜。

    Process for chemical vapor deposition of transition metal nitrides
    2.
    发明授权
    Process for chemical vapor deposition of transition metal nitrides 失效
    过渡金属硝化物的化学气相沉积过程

    公开(公告)号：US5139825A

    公开(公告)日：1992-08-18

    申请号：US444112

    申请日：1989-11-30

    申请人： Roy G. Gordon ,  Renaud Fix ,  David Hoffman

    发明人： Roy G. Gordon ,  Renaud Fix ,  David Hoffman

    IPC分类号： C01B21/06 ,  C23C16/34

    CPC分类号： C23C16/34

    摘要： A process for depositing a thin film of a transition metal nitride, e.g., titanium nitride, on a substrate is provided. The vapors of a transition metal organometallic coompound or a transition metal amido compound are mixed with ammonia gas and allowed to react near a substrate heated to a temperature in the range of 100.degree. C. to 400.degree. C., resulting in deposition of a film on the substrate.

    摘要翻译： 提供了在衬底上沉积过渡金属氮化物（例如氮化钛）的薄膜的工艺。 将过渡金属有机金属化合物或过渡金属氨基化合物的蒸气与氨气混合并使其在加热到100℃至400℃的温度的基板附近反应，导致膜的沉积 在基板上。

    Cyclic metal amides and vapor deposition using them
    3.
    发明授权
    Cyclic metal amides and vapor deposition using them 有权
    使用它们的环状金属酰胺和气相沉积

    公开(公告)号：US08796483B2

    公开(公告)日：2014-08-05

    申请号：US13077241

    申请日：2011-03-31

    申请人： Roy G. Gordon ,  Adam S. Hock ,  Jaeyeong Heo ,  Prasert Sinsermsuksakul

    发明人： Roy G. Gordon ,  Adam S. Hock ,  Jaeyeong Heo ,  Prasert Sinsermsuksakul

    IPC分类号： C07F7/22 ,  C07F7/24 ,  C23C16/00

    CPC分类号： C07F7/003 ,  C23C16/18 ,  C23C16/305 ,  C23C16/407 ,  C23C16/45553

    摘要： Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors. Deposition using the same tin precursor and H2S deposited tin monosulfide, SnS, a material suitable for solar cells.

    摘要翻译： 公开了含有锡或铅的新型环状酰胺。 这些环状酰胺可用于锡或铅及其氧化物，硫化物，硒化物，氮化物，磷化物，碳化物，硅化物或硼化物或其它化合物的原子层沉积或化学气相沉积。 通过环状锡酰胺蒸气和H 2 O 2或NO 2作为氧源反应沉积氧化锡（IV），SnO 2。 即使在非常狭窄的孔或沟槽内，这些膜也具有高纯度，平滑度，透明度，导电性，密度和均匀的厚度。 沉积温度对于热敏基材如塑料来说足够低。 这些膜的合适应用包括显示器，发光二极管，太阳能电池和气体传感器。 使用铝掺杂SnO2以降低其导电性，使得材料适合作为电子倍增器或透明晶体管中的有源半导体层。 沉积使用相同的锡前体和H2S沉积锡一硫化物，SnS，适合太阳能电池的材料。

    Gas-Phase Functionalization of Surfaces of Microelectronic Structures
    4.
    发明申请
    Gas-Phase Functionalization of Surfaces of Microelectronic Structures 有权
    微电子结构表面气相功能化

    公开(公告)号：US20120108075A1

    公开(公告)日：2012-05-03

    申请号：US13344738

    申请日：2012-01-06

    申请人： Roy G. Gordon ,  Damon B. Farmer

    发明人： Roy G. Gordon ,  Damon B. Farmer

    IPC分类号： H01L21/30 ,  B05D5/00 ,  B05D3/02 ,  B82Y99/00 ,  B82Y40/00

    CPC分类号： H01L51/0049 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/174 ,  C01B2202/02 ,  C01F7/304 ,  C01P2004/13 ,  H01L51/057 ,  H01L51/0595 ,  Y10S977/734 ,  Y10S977/755 ,  Y10S977/842 ,  Y10S977/847 ,  Y10S977/89 ,  Y10T428/2918

    摘要： There are provided methods for functionalizing a planar surface of a microelectronic structure, by exposing the surface to at least one vapor including at least one functionalization species, such as NO2 or CH3ONO, that non-covalently bonds to the surface while providing a functionalization layer of chemically functional groups, to produce a functionalized surface. The functionalized surface is exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the planar microelectronic surface while providing chemically functional groups. The stabilized surface is exposed to at least one material layer precursor species that deposits a material layer on the stabilized planar microelectronic surface. The stabilized planar microelectronic surface can be annealed at a peak annealing temperature that is less than about 700° C.

    摘要翻译： 提供了通过将表面暴露于至少一种包含非共价结合表面的官能化物质（例如NO 2或CH 3 ONO）的蒸气的表面而提供微电子结构的平坦表面的方法，同时提供 化学官能团，以产生官能化表面。 功能化表面暴露于与官能化层反应的至少一种汽相稳定物质，以形成稳定层，该稳定层使官能化层抵抗来自平面微电子表面的解吸，同时提供化学官能团。 稳定的表面暴露于在稳定的平面微电子表面上沉积材料层的至少一种材料层前体物质。 稳定的平面微电子表面可以在小于约700℃的峰值退火温度下退火

    Cyclic Metal Amides and Vapor Deposition Using Them
    5.
    发明申请
    Cyclic Metal Amides and Vapor Deposition Using Them 有权
    使用它们的循环金属酰胺和气相沉积

    公开(公告)号：US20120027937A1

    公开(公告)日：2012-02-02

    申请号：US13077241

    申请日：2011-03-31

    申请人： Roy G. Gordon ,  Adam S. Hock ,  Jaeyeong Heo ,  Prasert Sinsermsuksakul

    发明人： Roy G. Gordon ,  Adam S. Hock ,  Jaeyeong Heo ,  Prasert Sinsermsuksakul

    IPC分类号： B05D1/38 ,  C07F7/22 ,  C07F5/02 ,  C07F9/02 ,  C07F7/02 ,  B05D3/10 ,  C07F7/24

    CPC分类号： C07F7/003 ,  C23C16/18 ,  C23C16/305 ,  C23C16/407 ,  C23C16/45553

    摘要： Novel cyclic amides containing tin or lead are disclosed. These cyclic amides can be used for atomic layer deposition or chemical vapor deposition of tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds. Tin(IV) oxide, SnO2, films were deposited by reaction of a cyclic tin amide vapor and H2O2 or NO2 as oxygen sources. The films have high purity, smoothness, transparency, electrical conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors. Doping SnO2 with aluminum was used to reduce its conductivity, making material suitable as the active semiconductor layer in electron multipliers or transparent transistors. Deposition using the same tin precursor and H2S deposited tin monosulfide, SnS, a material suitable for solar cells.

    摘要翻译： 公开了含有锡或铅的新型环状酰胺。 这些环状酰胺可用于锡或铅及其氧化物，硫化物，硒化物，氮化物，磷化物，碳化物，硅化物或硼化物或其它化合物的原子层沉积或化学气相沉积。 通过环状锡酰胺蒸气和H 2 O 2或NO 2作为氧源反应沉积氧化锡（IV），SnO 2。 即使在非常狭窄的孔或沟槽内，这些膜也具有高纯度，平滑度，透明度，导电性，密度和均匀的厚度。 沉积温度对于热敏基材如塑料来说足够低。 这些膜的合适应用包括显示器，发光二极管，太阳能电池和气体传感器。 使用铝掺杂SnO2以降低其导电性，使得材料适合作为电子倍增器或透明晶体管中的有源半导体层。 沉积使用相同的锡前体和H2S沉积锡一硫化物，SnS，适合太阳能电池的材料。

    Chemical vapor deposition of fluorine-doped zinc oxide
    8.
    发明授权
    Chemical vapor deposition of fluorine-doped zinc oxide 有权
    氟掺杂氧化锌的化学气相沉积

    公开(公告)号：US6071561A

    公开(公告)日：2000-06-06

    申请号：US242093

    申请日：1999-06-16

    申请人： Roy G. Gordon ,  Keith Kramer ,  Haifan Liang

    发明人： Roy G. Gordon ,  Keith Kramer ,  Haifan Liang

    IPC分类号： C23C16/40

    CPC分类号： C23C16/407

    摘要： Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

    摘要翻译： PCT No.PCT / US97 / 11552 Sec。 371日期1999年6月16日第 102（e）日期1999年6月16日PCT提交1997年8月13日PCT公布。 公开号WO98 / 08245 日期1998年2月26日氟掺杂氧化锌的方法由包含二烷基锌螯合物如胺螯合物，氧源和氟源的气化前体化合物沉积。 涂层具有高导电性，对可见光透明，反射红外辐射，吸收紫外光，无碳杂质。

    Chemical vapor deposition of metal oxides
    9.
    发明授权
    Chemical vapor deposition of metal oxides 失效
    化学气相沉积金属氧化物

    公开(公告)号：US5389401A

    公开(公告)日：1995-02-14

    申请号：US200678

    申请日：1994-02-23

    申请人： Roy G. Gordon

    发明人： Roy G. Gordon

    IPC分类号： C23C16/40

    CPC分类号： C23C16/407 ,  C23C16/403 ,  C23C16/405

    摘要： Films of metal oxides are deposited from vaporized precursor compounds, such as metal alkoxides, by reaction with the vapor of a compound, such as cyclohexenone, that is derived formally from a stable aromatic compound by replacing one hydrogen with a ketone functional group (.dbd.O) and adding three hydrogen atoms to other atoms in the aromatic system. For example, the vapor of titanium (IV) isopropoxide reacts with the vapor of 2-cyclohexen-1-one to deposit titanium dioxide at 400.degree. C. The deposit is highly transparent and free of carbon impurity. This vapor mixture with added aluminum isopropoxide deposits a highly insulating film of aluminum-doped titanium dioxide.

    摘要翻译： 通过与通过用酮官能团（= O）取代一个氢的正好由稳定的芳族化合物衍生的化合物如环己烯酮的化合物的蒸气反应，从气化的前体化​​合物如金属醇盐沉积金属氧化物的膜 ）并在芳族体系中向其它原子添加三个氢原子。 例如，异丙醇钛（IV）的蒸气与2-环己烯-1-酮的蒸气反应，在400℃下沉积二氧化钛。沉积物是高度透明的，没有碳杂质。 这种与添加的异丙醇铝的蒸气混合物沉积了高度绝缘的掺铝二氧化钛膜。