公开(公告)号：US4942454A

公开(公告)日：1990-07-17

申请号：US227332

申请日：1988-08-02

申请人： Ryuichiro Mori ,  Katsuyuki Fukudome ,  Tatsuhiko Akiyama ,  Yoshitaka Takemoto

发明人： Ryuichiro Mori ,  Katsuyuki Fukudome ,  Tatsuhiko Akiyama ,  Yoshitaka Takemoto

IPC分类号： H01L23/495 ,  H01L23/48

CPC分类号： H01L24/32 ,  H01L23/49503 ,  H01L24/27 ,  H01L24/83 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8319 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/92247 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181

摘要： A resin-sealed semiconductor device comprises a die pad which has through holes. Thin metal films are provided on the surfaces of the die pad except for the wall surfaces of the holes. A resin, which is used for integral molding of the die pad and a semiconductor element, flows into the holes during molding. The semiconductor device so mounted does not induce cracks in the resin and, thus, has good moisture resistance.

摘要翻译： 树脂密封半导体器件包括具有通孔的管芯焊盘。 除了孔的壁表面之外，在管芯焊盘的表面上设置薄金属膜。 用于芯片焊盘和半导体元件的一体成型的树脂在成型期间流入孔中。 这样安装的半导体器件不会在树脂中引起裂纹，因此具有良好的耐湿性。

公开(公告)号：US4884124A

公开(公告)日：1989-11-28

申请号：US85769

申请日：1987-08-17

申请人： Ryuichiro Mori ,  Tatsuhiko Akiyama ,  Katsuyuki Fukudome

发明人： Ryuichiro Mori ,  Tatsuhiko Akiyama ,  Katsuyuki Fukudome

IPC分类号： H01L23/31 ,  H01L23/495

CPC分类号： H01L23/49503 ,  H01L23/3107 ,  H01L2224/32014 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2924/01079 ,  H01L2924/181 ,  H01L2924/3511

摘要： A semiconductor device comprises a semiconductor element which is bonded to a flat base and encapsulated in a resin. The base has a bonding section at its center to which the semiconductor element is bonded, the area of the bonding section being smaller than that of the bottom surface of the semiconductor element. The portion of the base outside the bonding section has a plurality of through holes or depressions formed in its top and bottom surfaces which increase the adhesion between the resin and the base. The bonding section may be substantially separated from the remainder of the base by elongated through holes or depressions which substantially surround the bonding section.

摘要翻译： 半导体器件包括结合到平坦基底并封装在树脂中的半导体元件。 该基座的半导体元件的中心附近具有接合部，接合部的面积小于半导体元件的底面的面积。 接合部分外部的基部部分具有在其顶表面和底表面上形成的多个通孔或凹陷，这增加了树脂与基体之间的粘合力。 接合部分可以通过基本上围绕接合部分的细长的通孔或凹部基本上与基部的其余部分分离。

公开(公告)号：US5659199A

公开(公告)日：1997-08-19

申请号：US629149

申请日：1996-04-08

申请人： Ryuichiro Mori ,  Shunichi Abe ,  Tatsuhiko Akiyama ,  Michitaka Kimura

发明人： Ryuichiro Mori ,  Shunichi Abe ,  Tatsuhiko Akiyama ,  Michitaka Kimura

IPC分类号： H01L21/52 ,  H01L23/495 ,  H01L23/50 ,  H01L23/02

CPC分类号： H01L24/32 ,  H01L23/49503 ,  H01L23/49513 ,  H01L24/29 ,  H01L2224/27013 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/83101 ,  H01L2224/83385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/15151

摘要： A resin sealed semiconductor device includes a lead frame having a die pad; a semiconductor element mounted on the die pad; a resin sealing the lead frame and the semiconductor element, the die pad including a plurality of through holes where the semiconductor element is mounted; and a resin film bonding the semiconductor element to the die pad.

摘要翻译： 树脂密封半导体器件包括具有管芯焊盘的引线框架; 安装在管芯焊盘上的半导体元件; 密封引线框架和半导体元件的树脂，所述管芯焊盘包括安装半导体元件的多个通孔; 以及将半导体元件接合到管芯焊盘的树脂膜。

公开(公告)号：US08652880B2

公开(公告)日：2014-02-18

申请号：US13572512

申请日：2012-08-10

申请人： Koji Bando ,  Kazuyuki Misumi ,  Tatsuhiko Akiyama ,  Naoki Izumi ,  Akira Yamazaki

发明人： Koji Bando ,  Kazuyuki Misumi ,  Tatsuhiko Akiyama ,  Naoki Izumi ,  Akira Yamazaki

IPC分类号： H01L21/56

CPC分类号： H01L23/49503 ,  G11C11/16 ,  H01L23/552 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L27/228 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01061 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2224/05599 ,  H01L2924/00012

摘要： To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device. A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.

摘要翻译： 提供一种通过提高包括MRAM器件的半导体器件中的外部磁场的电阻来提高MRAM器件的数据保持特性的技术。 第一磁屏蔽材料经由第一管芯附着膜设置在管芯焊盘上。 然后，半导体芯片通过第二芯片附着膜安装在第一磁屏蔽材料上。 此外，第二磁屏蔽材料通过第三芯片附着膜设置在半导体芯片的上方。 也就是说，半导体芯片被布置成被第一磁屏蔽材料和第二磁屏蔽材料夹在中间。 此时，当第二磁屏蔽材料的平面区域小于第一磁屏蔽材料的平面区域时，第二磁屏蔽材料的厚度比第一磁屏蔽材料的厚度厚。

公开(公告)号：US20100164077A1

公开(公告)日：2010-07-01

申请号：US12647445

申请日：2009-12-26

申请人： Koji Bando ,  Kazuyuki Misumi ,  Tatsuhiko Akiyama ,  Naoki Izumi ,  Akira Yamazaki

发明人： Koji Bando ,  Kazuyuki Misumi ,  Tatsuhiko Akiyama ,  Naoki Izumi ,  Akira Yamazaki

IPC分类号： H01L23/552 ,  H01L21/50

CPC分类号： H01L23/49503 ,  G11C11/16 ,  H01L23/552 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L27/228 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01061 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2224/05599 ,  H01L2924/00012

摘要： To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device.A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.

摘要翻译： 提供一种通过提高包括MRAM器件的半导体器件中的外部磁场的电阻来提高MRAM器件的数据保持特性的技术。 第一磁屏蔽材料经由第一管芯附着膜设置在管芯焊盘上。 然后，半导体芯片通过第二芯片附着膜安装在第一磁屏蔽材料上。 此外，第二磁屏蔽材料通过第三芯片附着膜设置在半导体芯片的上方。 也就是说，半导体芯片被布置成被第一磁屏蔽材料和第二磁屏蔽材料夹在中间。 此时，当第二磁屏蔽材料的平面区域小于第一磁屏蔽材料的平面区域时，第二磁屏蔽材料的厚度比第一磁屏蔽材料的厚度厚。

公开(公告)号：US06545366B2

公开(公告)日：2003-04-08

申请号：US09887164

申请日：2001-06-25

申请人： Kazunari Michii ,  Tatsuhiko Akiyama

发明人： Kazunari Michii ,  Tatsuhiko Akiyama

IPC分类号： H01L2348

CPC分类号： H01L24/48 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/49 ,  H01L24/92 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48599 ,  H01L2224/4945 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/92 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06582 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20753 ,  H01L2924/20755 ,  H01L2924/3011 ,  H01L2224/85 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： In order to reduce the thickness of a semiconductor device and double its capacity, two center pad semiconductor chips stacked one on the other, back to back, are fixed to one face of a wiring substrate. The difference in the length of routing between external lands and fingers is minimized, and each of the center pads and corresponding fingers are connected via metal wires having a high conductivity. The main face of a first center pad semiconductor chip is fixed to the wiring substrate that has first and second wired faces and a through opening. The back face of the first semiconductor chip and the back face of a second semiconductor chip are fixed to each other using a bonding material. The pads on each semiconductor chip are connected to corresponding fingers on the wiring substrate via metal wires. One face of the wiring substrate is sealed with a sealing resin, and on the other face, an area in the vicinity of the through opening is sealed.

摘要翻译： 为了减小半导体器件的厚度并使其容量增加一倍，两个彼此堆叠在一起的中心焊盘半导体芯片固定在布线基板的一个面上。 外部焊盘和手指之间的路由长度差异最小化，并且每个中心焊盘和相应的指状物通过具有高导电性的金属线连接。 第一中心焊盘半导体芯片的主面固定到具有第一和第二布线面和通孔的布线基板。 使用接合材料将第一半导体芯片的背面和第二半导体芯片的背面彼此固定。 每个半导体芯片上的焊盘通过金属线连接到布线基板上的对应的指状物。 接线基板的一面用密封树脂密封，另一面密封贯通孔附近的区域。

公开(公告)号：US06255719B1

公开(公告)日：2001-07-03

申请号：US09201833

申请日：1998-12-01

申请人： Hirotada Kuriyama ,  Kazuhito Tsutsumi ,  Yutaka Arita ,  Tatsuhiko Akiyama ,  Tadafumi Kishimoto

发明人： Hirotada Kuriyama ,  Kazuhito Tsutsumi ,  Yutaka Arita ,  Tatsuhiko Akiyama ,  Tadafumi Kishimoto

IPC分类号： H01L23552

CPC分类号： H01L23/556 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/1627 ,  Y10S257/913 ,  H01L2924/00

摘要： A boron nitride inclusion sheet is applied on the surface of a mold package enclosing a semiconductor chip so as to prevent soft error caused by a thermal neutron.

摘要翻译： 在封装半导体芯片的模具封装的表面上施加氮化硼夹层板，以防止由热中子引起的软误差。

公开(公告)号：US08524510B2

公开(公告)日：2013-09-03

申请号：US13353004

申请日：2012-01-18

申请人： Kazuyuki Misumi ,  Masahiro Shimizu ,  Tsuyoshi Koga ,  Tatsuhiko Akiyama ,  Tomohiro Murakami

发明人： Kazuyuki Misumi ,  Masahiro Shimizu ,  Tsuyoshi Koga ,  Tatsuhiko Akiyama ,  Tomohiro Murakami

IPC分类号： H01L21/00 ,  H01L21/30

CPC分类号： H01L43/12 ,  H01L23/552 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L27/228 ,  H01L2224/05553 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01021 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 um or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.

摘要翻译： 一种制造磁存储器芯片器件的方法包括以下步骤：在形成在硅晶片上的多个磁存储器芯片中的每一个中写入信息; 在写入信息之后，在硅晶片的背面上粘附高磁导率板，高磁导率板具有比硅更高的磁导率并且具有50μm以上的厚度; 在粘附高磁导率板之后，将硅晶片切割成各自的磁存储芯片。

公开(公告)号：US06583511B2

公开(公告)日：2003-06-24

申请号：US09903629

申请日：2001-07-13

申请人： Kazunari Michii ,  Tatsuhiko Akiyama

发明人： Kazunari Michii ,  Tatsuhiko Akiyama

IPC分类号： H01L2348

CPC分类号： H01L24/85 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/06136 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48599 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/78703 ,  H01L2224/85148 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20753 ,  H01L2224/48227 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A laminated semiconductor chip assembly fabricated by fixing back surfaces of first and second semiconductor chips, respectively having principal surfaces and back surfaces, to each other. Each of the principal surfaces of the laminated semiconductor chip assembly is fixed to a corresponding surface of a lead frame. A standing linear portion of a metallic wire on a ball bond side is pulled parallel to a side surface of the semiconductor chip in its thickness direction and a side surface of the inner lead in its thickness direction, and subjected to wire bonding. The formed semiconductor chip assembly is covered by a sealing resin so that an outer lead protrudes from the sealing resin. Thus, the semiconductor device can be made thin, cost can be reduced, and quality can be improved to increase capacities of electronic equipment.

摘要翻译： 通过将分别具有主表面和背面的第一和第二半导体芯片的背面相互固定而制成的层叠半导体芯片组件。 层叠半导体芯片组件的每个主表面固定到引线框架的相应表面上。 平行于半导体芯片的厚度方向的侧面和内部引线的厚度方向的侧面平行于金属线的球形接合侧的直立部分进行引线接合。 形成的半导体芯片组件被密封树脂​​覆盖，使得外部引线从密封树脂突出。 因此，可以使半导体器件变薄，可以降低成本，并且可以提高质量以增加电子设备的容量。

公开(公告)号：US08258604B2

公开(公告)日：2012-09-04

申请号：US12647445

申请日：2009-12-26

申请人： Koji Bando ,  Kazuyuki Misumi ,  Tatsuhiko Akiyama ,  Naoki Izumi ,  Akira Yamazaki

发明人： Koji Bando ,  Kazuyuki Misumi ,  Tatsuhiko Akiyama ,  Naoki Izumi ,  Akira Yamazaki

IPC分类号： H01L23/552

CPC分类号： H01L23/49503 ,  G11C11/16 ,  H01L23/552 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L27/228 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4826 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01061 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2224/05599 ,  H01L2924/00012

摘要： To provide a technique that can improve the data retention characteristic of an MRAM device by improving the resistance against an external magnetic field in a semiconductor device including the MRAM device.A first magnetic shield material is disposed over a die pad via a first die attach film. Then, a semiconductor chip is mounted over the first magnetic shield material via a second die attach film. Furthermore, a second magnetic shield material is disposed over the semiconductor chip via a third die attach film. That is, the semiconductor chip is disposed so as to be sandwiched by the first magnetic shield material and the second magnetic shield material. At this time, while the planar area of the second magnetic shield material is smaller than that of the first magnetic shield material, the thickness of the second magnetic shield material is thicker than that of the first magnetic shield material.

摘要翻译： 提供一种通过提高包括MRAM器件的半导体器件中的外部磁场的电阻来提高MRAM器件的数据保持特性的技术。 第一磁屏蔽材料经由第一管芯附着膜设置在管芯焊盘上。 然后，半导体芯片通过第二芯片附着膜安装在第一磁屏蔽材料上。 此外，第二磁屏蔽材料通过第三芯片附着膜设置在半导体芯片的上方。 也就是说，半导体芯片被布置成被第一磁屏蔽材料和第二磁屏蔽材料夹在中间。 此时，当第二磁屏蔽材料的平面区域小于第一磁屏蔽材料的平面区域时，第二磁屏蔽材料的厚度比第一磁屏蔽材料的厚度厚。