Wiring Substrate and Semiconductor Device
    1.
    发明申请
    Wiring Substrate and Semiconductor Device 有权
    接线基板和半导体器件

    公开(公告)号:US20150181703A1

    公开(公告)日:2015-06-25

    申请号:US14548568

    申请日:2014-11-20

    Abstract: A wiring substrate includes first and second wiring structures. The first wiring structure includes a core substrate, first and second insulation layers formed from a thermosetting insulative resin respectively including first and second reinforcement materials, and a via wire formed in the first insulation layer. The second wiring structure includes a third insulation layer formed on an upper surface of the first insulation layer and an upper end surface of the via wire, and a wiring layer extended through the third insulation layer and electrically connected to the via wire. The outermost insulation layer, the main component of which is a photosensitive resin, is stacked on a lower surface of the second insulation layer. The second wiring structure has a higher wiring density than the first wiring structure. The first reinforcement material is partially exposed on the upper surface of the first insulation layer.

    Abstract translation: 布线基板包括第一和第二布线结构。 第一布线结构包括芯基板,由分别包括第一和第二加强材料的热固性绝缘树脂形成的第一绝缘层和第二绝缘层,以及形成在第一绝缘层中的导线。 第二布线结构包括形成在第一绝缘层的上表面上的通孔导线的上表面的第三绝缘层和延伸穿过第三绝缘层并与通孔导线连接的布线层。 其主要成分是感光性树脂的最外层绝缘层层叠在第二绝缘层的下表面上。 第二布线结构具有比第一布线结构更高的布线密度。 第一增强材料部分地暴露在第一绝缘层的上表面上。

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