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1.发明申请公开(公告)号：US20150326183A1
公开(公告)日：2015-11-12
申请号：US14686666
申请日：2015-04-14
发明人： Howard E. Chen , Yifan Guo , Dinhphuoc Vu Hoang , Mehran Janani , Tin Myint Ko , Philip John Lehtola , Anthony James LoBianco , Hardik Bhupendra Modi , Hoang Mong Nguyen , Matthew Thomas Ozalas , Sandra Louise Petty-Weeks , Matthew Sean Read , Jens Albrecht Riege , David Steven Ripley , Hongxiao Shao , Hong Shen , Weimin Sun , Hsiang-Chih Sun , Patrick Lawrence Welch , Peter J. Zampardi, JR. , Guohao Zhang
CPC分类号： H03F1/0205 , H01L21/485 , H01L21/4853 , H01L21/4864 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L21/8249 , H01L21/8252 , H01L22/14 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L23/49866 , H01L23/49894 , H01L23/50 , H01L23/522 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L27/0605 , H01L27/0623 , H01L27/092 , H01L29/0684 , H01L29/0821 , H01L29/0826 , H01L29/1004 , H01L29/20 , H01L29/205 , H01L29/36 , H01L29/66242 , H01L29/66863 , H01L29/737 , H01L29/7371 , H01L29/812 , H01L29/8605 , H01L2223/6611 , H01L2223/6616 , H01L2223/6644 , H01L2223/665 , H01L2223/6655 , H01L2224/05155 , H01L2224/05164 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48227 , H01L2224/48465 , H01L2224/48611 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48811 , H01L2224/48816 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4903 , H01L2224/49111 , H01L2224/49176 , H01L2224/85205 , H01L2224/85207 , H01L2224/85411 , H01L2224/85416 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/10329 , H01L2924/12033 , H01L2924/12042 , H01L2924/1305 , H01L2924/13051 , H01L2924/1306 , H01L2924/13091 , H01L2924/1421 , H01L2924/15747 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F1/565 , H03F3/187 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/213 , H03F3/245 , H03F3/347 , H03F3/45 , H03F3/60 , H03F2200/387 , H03F2200/451 , H03F2200/48 , H03F2200/555 , H01L2924/00 , H01L2924/00014
摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier die including a power amplifier configured to amplify a radio frequency (RF) signal, the power amplifier including a heterojunction bipolar transistor (HBT) and a p-type field effect transistor (PFET), the PFET including a semiconductor segment that includes substantially the same material as a layer of a collector of the HBT, the semiconductor segment corresponding to a channel of the PFET; a load line electrically connected to an output of the power amplifier and configured to provide impedance matching at a fundamental frequency of the RF signal; and a harmonic termination circuit electrically connected to the output of the power amplifier and configured to terminate at a phase corresponding to a harmonic frequency of the RF signal. Other embodiments of the module are provided along with related methods and components thereof.
摘要翻译： 本公开的一个方面是功率放大器模块，其包括功率放大器管芯，功率放大器管芯包括被配置为放大射频（RF）信号的功率放大器，功率放大器包括异质结双极晶体管（HBT）和p型场效应晶体管 （PFET），所述PFET包括半导体段，所述半导体段包括与所述HBT的集电极基本相同的材料，所述半导体段对应于所述PFET的沟道; 电连接到所述功率放大器的输出并被配置为在所述RF信号的基频处提供阻抗匹配的负载线; 以及谐波终端电路，其电连接到所述功率放大器的输出并且被配置为在与所述RF信号的谐波频率相对应的相位处终止。 模块的其他实施例与其相关方法和组件一起提供。
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2.发明申请公开(公告)号：US20140002188A1
公开(公告)日：2014-01-02
申请号：US13917384
申请日：2013-06-13
发明人： Howard E. Chen , Yifan Guo , Dinhphuoc Vu Hoang , Mehran Janani , Tin Myint Ko , Philip John Lehtola , Anthony James LoBianco , Hardik Bhupendra Modi , Hoang Mong Nguyen , Matthew Thomas Ozalas , Sandra Louise Petty-Weeks , Matthew Sean Read , Jens Albrecht Riege , David Steven Ripley , Hongxiao Shao , Hong Shen , Weimin Sun , Hsiang-Chih Sun , Patrick Lawrence Welch , Peter J. Zampardi, JR. , Guohao Zhang
IPC分类号： H03F3/19
CPC分类号： H03F1/0205 , H01L21/485 , H01L21/4853 , H01L21/4864 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L21/8249 , H01L21/8252 , H01L22/14 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L23/49866 , H01L23/49894 , H01L23/50 , H01L23/522 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L27/0605 , H01L27/0623 , H01L27/092 , H01L29/0684 , H01L29/0821 , H01L29/0826 , H01L29/1004 , H01L29/20 , H01L29/205 , H01L29/36 , H01L29/66242 , H01L29/66863 , H01L29/737 , H01L29/7371 , H01L29/812 , H01L29/8605 , H01L2223/6611 , H01L2223/6616 , H01L2223/6644 , H01L2223/665 , H01L2223/6655 , H01L2224/05155 , H01L2224/05164 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48227 , H01L2224/48465 , H01L2224/48611 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48811 , H01L2224/48816 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4903 , H01L2224/49111 , H01L2224/49176 , H01L2224/85205 , H01L2224/85207 , H01L2224/85411 , H01L2224/85416 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/10329 , H01L2924/12033 , H01L2924/12042 , H01L2924/1305 , H01L2924/13051 , H01L2924/1306 , H01L2924/13091 , H01L2924/1421 , H01L2924/15747 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F1/565 , H03F3/187 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/213 , H03F3/245 , H03F3/347 , H03F3/45 , H03F3/60 , H03F2200/387 , H03F2200/451 , H03F2200/48 , H03F2200/555 , H01L2924/00 , H01L2924/00014
摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
摘要翻译： 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的连接处具有至少约3×1016cm-3的掺杂浓度， 所述收集器还具有至少第一分级，其中掺杂浓度从所述基底增加; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。
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公开(公告)号：US20150326181A1
公开(公告)日：2015-11-12
申请号：US14686559
申请日：2015-04-14
发明人： Howard E. Chen , Yifan Guo , Dinhphuoc Vu Hoang , Mehran Janani , Tin Myint Ko , Philip John Lehtola , Anthony James LoBianco , Hardik Bhupendra Modi , Hoang Mong Nguyen , Matthew Thomas Ozalas , Sandra Louise Petty-Weeks , Matthew Sean Read , Jens Albrecht Riege , David Steven Ripley , Hongxiao Shao , Hong Shen , Weimin Sun , Hsiang-Chih Sun , Patrick Lawrence Welch , Peter J. Zampardi, JR. , Guohao Zhang
CPC分类号： H03F1/0205 , H01L21/485 , H01L21/4853 , H01L21/4864 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L21/8249 , H01L21/8252 , H01L22/14 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L23/49866 , H01L23/49894 , H01L23/50 , H01L23/522 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L27/0605 , H01L27/0623 , H01L27/092 , H01L29/0684 , H01L29/0821 , H01L29/0826 , H01L29/1004 , H01L29/20 , H01L29/205 , H01L29/36 , H01L29/66242 , H01L29/66863 , H01L29/737 , H01L29/7371 , H01L29/812 , H01L29/8605 , H01L2223/6611 , H01L2223/6616 , H01L2223/6644 , H01L2223/665 , H01L2223/6655 , H01L2224/05155 , H01L2224/05164 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48227 , H01L2224/48465 , H01L2224/48611 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48811 , H01L2224/48816 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4903 , H01L2224/49111 , H01L2224/49176 , H01L2224/85205 , H01L2224/85207 , H01L2224/85411 , H01L2224/85416 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/10329 , H01L2924/12033 , H01L2924/12042 , H01L2924/1305 , H01L2924/13051 , H01L2924/1306 , H01L2924/13091 , H01L2924/1421 , H01L2924/15747 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F1/565 , H03F3/187 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/213 , H03F3/245 , H03F3/347 , H03F3/45 , H03F3/60 , H03F2200/387 , H03F2200/451 , H03F2200/48 , H03F2200/555 , H01L2924/00 , H01L2924/00014
摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
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4.发明申请公开(公告)号：US20150326182A1
公开(公告)日：2015-11-12
申请号：US14686585
申请日：2015-04-14
发明人： Howard E. Chen , Yifan Guo , Dinhphuoc Vu Hoang , Mehran Janani , Tin Myint Ko , Philip John Lehtola , Anthony James LoBianco , Hardik Bhupendra Modi , Hoang Mong Nguyen , Matthew Thomas Ozalas , Sandra Louise Petty-Weeks , Matthew Sean Read , Jens Albrecht Riege , David Steven Ripley , Hongxiao Shao , Hong Shen , Weimin Sun , Hsiang-Chih Sun , Patrick Lawrence Welch , Peter J. Zampardi, JR. , Guohao Zhang
CPC分类号： H03F1/0205 , H01L21/485 , H01L21/4853 , H01L21/4864 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L21/8249 , H01L21/8252 , H01L22/14 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L23/49866 , H01L23/49894 , H01L23/50 , H01L23/522 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L27/0605 , H01L27/0623 , H01L27/092 , H01L29/0684 , H01L29/0821 , H01L29/0826 , H01L29/1004 , H01L29/20 , H01L29/205 , H01L29/36 , H01L29/66242 , H01L29/66863 , H01L29/737 , H01L29/7371 , H01L29/812 , H01L29/8605 , H01L2223/6611 , H01L2223/6616 , H01L2223/6644 , H01L2223/665 , H01L2223/6655 , H01L2224/05155 , H01L2224/05164 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48227 , H01L2224/48465 , H01L2224/48611 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48811 , H01L2224/48816 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4903 , H01L2224/49111 , H01L2224/49176 , H01L2224/85205 , H01L2224/85207 , H01L2224/85411 , H01L2224/85416 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/10329 , H01L2924/12033 , H01L2924/12042 , H01L2924/1305 , H01L2924/13051 , H01L2924/1306 , H01L2924/13091 , H01L2924/1421 , H01L2924/15747 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F1/565 , H03F3/187 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/213 , H03F3/245 , H03F3/347 , H03F3/45 , H03F3/60 , H03F2200/387 , H03F2200/451 , H03F2200/48 , H03F2200/555 , H01L2924/00 , H01L2924/00014
摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
摘要翻译： 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的连接处具有至少约3×1016cm-3的掺杂浓度， 所述收集器还具有至少第一分级，其中掺杂浓度从所述基底增加; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。
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5.发明授权公开(公告)号：US09041472B2
公开(公告)日：2015-05-26
申请号：US13917384
申请日：2013-06-13
发明人： Howard E. Chen , Yifan Guo , Dinhphuoc Vu Hoang , Mehran Janani , Tin Myint Ko , Philip John Lehtola , Anthony James LoBianco , Hardik Bhupendra Modi , Hoang Mong Nguyen , Matthew Thomas Ozalas , Sandra Louise Petty-Weeks , Matthew Sean Read , Jens Albrecht Riege , David Steven Ripley , Hongxiao Shao , Hong Shen , Weimin Sun , Hsiang-Chih Sun , Patrick Lawrence Welch , Peter J. Zampardi, Jr. , Guohao Zhang
IPC分类号： H03F3/14 , H03F3/19 , H03F3/24 , H01L23/552 , H01L23/66 , H01L23/00 , H01L29/36 , H01L29/66 , H01L29/737 , H01L29/812 , H01L29/08 , H01L29/205 , H01L27/06 , H01L29/8605 , H01L21/8252 , H01L27/092
CPC分类号： H03F1/0205 , H01L21/485 , H01L21/4853 , H01L21/4864 , H01L21/565 , H01L21/76898 , H01L21/78 , H01L21/8249 , H01L21/8252 , H01L22/14 , H01L23/3114 , H01L23/481 , H01L23/49811 , H01L23/49827 , H01L23/49838 , H01L23/49844 , H01L23/49861 , H01L23/49866 , H01L23/49894 , H01L23/50 , H01L23/522 , H01L23/552 , H01L23/66 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/85 , H01L24/97 , H01L27/0605 , H01L27/0623 , H01L27/092 , H01L29/0684 , H01L29/0821 , H01L29/0826 , H01L29/1004 , H01L29/20 , H01L29/205 , H01L29/36 , H01L29/66242 , H01L29/66863 , H01L29/737 , H01L29/7371 , H01L29/812 , H01L29/8605 , H01L2223/6611 , H01L2223/6616 , H01L2223/6644 , H01L2223/665 , H01L2223/6655 , H01L2224/05155 , H01L2224/05164 , H01L2224/05554 , H01L2224/05644 , H01L2224/45015 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48177 , H01L2224/48227 , H01L2224/48465 , H01L2224/48611 , H01L2224/48644 , H01L2224/48647 , H01L2224/48655 , H01L2224/48664 , H01L2224/48811 , H01L2224/48816 , H01L2224/48844 , H01L2224/48847 , H01L2224/48855 , H01L2224/48864 , H01L2224/4903 , H01L2224/49111 , H01L2224/49176 , H01L2224/85205 , H01L2224/85207 , H01L2224/85411 , H01L2224/85416 , H01L2224/85444 , H01L2224/85455 , H01L2224/85464 , H01L2924/00011 , H01L2924/10253 , H01L2924/10329 , H01L2924/12033 , H01L2924/12042 , H01L2924/1305 , H01L2924/13051 , H01L2924/1306 , H01L2924/13091 , H01L2924/1421 , H01L2924/15747 , H01L2924/181 , H01L2924/19105 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H03F1/565 , H03F3/187 , H03F3/19 , H03F3/195 , H03F3/21 , H03F3/213 , H03F3/245 , H03F3/347 , H03F3/45 , H03F3/60 , H03F2200/387 , H03F2200/451 , H03F2200/48 , H03F2200/555 , H01L2924/00 , H01L2924/00014
摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.
摘要翻译： 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的连接处具有至少约3×1016cm-3的掺杂浓度， 所述收集器还具有至少第一分级，其中掺杂浓度从所述基底增加; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。
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6.发明授权Semiconductor package with integrated interference shielding and method of manufacture thereof 有权具有集成干涉屏蔽的半导体封装及其制造方法公开(公告)号：US08987889B2
公开(公告)日：2015-03-24
申请号：US14299895
申请日：2014-06-09
发明人： Patrick Lawrence Welch , Yifan Guo
IPC分类号： H01L23/48 , H01L23/552 , H01L23/00
CPC分类号： H01L23/552 , H01L21/50 , H01L21/56 , H01L23/3121 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/16225 , H01L2224/29339 , H01L2224/33181 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/4909 , H01L2224/49096 , H01L2224/4945 , H01L2224/85207 , H01L2924/01047 , H01L2924/01079 , H01L2924/12042 , H01L2924/181 , H01L2924/19107 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： An integrated electromagnetic interference (EMI) shield for a semiconductor module package. The integrated EMI shield includes a plurality of wirebond springs electrically connected between a ground plane in the substrate of the package and a conductive layer printed on the top of the package mold compound. The wirebond springs have a defined shape that causes a spring effect to provide contact electrical connection between the tops of the wirebond springs and the conductive layer. The wirebond springs can be positioned anywhere in the module package, around all or some of the devices included in the package, to create a complete EMI shield around those devices.
摘要翻译： 用于半导体模块封装的集成电磁干扰（EMI）屏蔽。 集成EMI屏蔽包括电连接在封装的基板中的接地平面和印刷在封装模具化合物的顶部上的导电层之间的多个引线键弹簧。 导线弹簧具有限定的形状，其引起弹簧效应以在引线弹簧的顶部和导电层之间提供接触电连接。 导线弹簧可以位于模块封装中的任何位置，围绕包装中包括的所有或一些设备，以围绕这些器件创建完整的EMI屏蔽。
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7.发明申请公开(公告)号：US20140353807A1
公开(公告)日：2014-12-04
申请号：US14299895
申请日：2014-06-09
发明人： Patrick Lawrence Welch , Yifan Guo
IPC分类号： H01L23/552 , H01L23/00
CPC分类号： H01L23/552 , H01L21/50 , H01L21/56 , H01L23/3121 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/16225 , H01L2224/29339 , H01L2224/33181 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/4909 , H01L2224/49096 , H01L2224/4945 , H01L2224/85207 , H01L2924/01047 , H01L2924/01079 , H01L2924/12042 , H01L2924/181 , H01L2924/19107 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： An integrated electromagnetic interference (EMI) shield for a semiconductor module package. The integrated EMI shield includes a plurality of wirebond springs electrically connected between a ground plane in the substrate of the package and a conductive layer printed on the top of the package mold compound. The wirebond springs have a defined shape that causes a spring effect to provide contact electrical connection between the tops of the wirebond springs and the conductive layer. The wirebond springs can be positioned anywhere in the module package, around all or some of the devices included in the package, to create a complete EMI shield around those devices.
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8.发明申请SEMICONDUCTOR PACKAGE WITH INTEGRATED INTERFERENCE SHIELDING AND METHOD OF MANUFACTURE THEREOF 有权具有一体化干涉屏蔽的半导体封装及其制造方法公开(公告)号：US20140030852A1
公开(公告)日：2014-01-30
申请号：US13740436
申请日：2013-01-14
发明人： Patrick Lawrence Welch , Yifan Guo
IPC分类号： H01L21/50
CPC分类号： H01L23/552 , H01L21/50 , H01L21/56 , H01L23/3121 , H01L24/33 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/16225 , H01L2224/29339 , H01L2224/33181 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/4909 , H01L2224/49096 , H01L2224/4945 , H01L2224/85207 , H01L2924/01047 , H01L2924/01079 , H01L2924/12042 , H01L2924/181 , H01L2924/19107 , H01L2924/3025 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要： An integrated electromagnetic interference (EMI) shield for a semiconductor module package. The integrated EMI shield includes a plurality of wirebond springs electrically connected between a ground plane in the substrate of the package and a conductive layer printed on the top of the package mold compound. The wirebond springs have a defined shape that causes a spring effect to provide contact electrical connection between the tops of the wirebond springs and the conductive layer. The wirebond springs can be positioned anywhere in the module package, around all or some of the devices included in the package, to create a complete EMI shield around those devices.
摘要翻译： 用于半导体模块封装的集成电磁干扰（EMI）屏蔽。 集成EMI屏蔽包括电连接在封装的基板中的接地平面和印刷在封装模具化合物的顶部上的导电层之间的多个引线键弹簧。 导线弹簧具有限定的形状，其引起弹簧效应以在引线弹簧的顶部和导电层之间提供接触电连接。 导线弹簧可以位于模块封装中的任何位置，围绕包装中包括的所有或一些设备，以围绕这些器件创建完整的EMI屏蔽。
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