公开(公告)号：US20190333835A1

公开(公告)日：2019-10-31

申请号：US16408245

申请日：2019-05-09

申请人： Skyworks Solutions, Inc.

发明人： Hong Shen

IPC分类号： H01L23/31 ,  H01L21/768 ,  H01L21/683 ,  H01L21/56 ,  H01L23/00

摘要： Methods related to plating a through-wafer via of a gallium arsenide integrated circuit are disclosed. For example, to improve copper plating, a seed layer formed in the through-wafer vias can be modified to increase water affinity, rinsed to remove contaminants, and activated to facilitate copper deposition. Other methods related to metallizing a through wafer via in gallium arsenide integrated circuits are disclosed. Such methods can include copper plating a through wafer via of a gallium arsenide integrated circuit.

公开(公告)号：US10340186B2

公开(公告)日：2019-07-02

申请号：US14808250

申请日：2015-07-24

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Hong Shen

IPC分类号： H01L21/768 ,  H01L21/78 ,  H01L23/544 ,  H01L23/532 ,  H01L23/495 ,  H01L23/482 ,  H01L21/683 ,  H01L23/00 ,  H01L21/56

摘要： Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Various protocols can be employed during processing to avoid cross-contamination between copper-plated and non-copper-plated wafers. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

公开(公告)号：US09755592B2

公开(公告)日：2017-09-05

申请号：US15260015

申请日：2016-09-08

申请人： Skyworks Solutions, Inc.

发明人： Peter J. Zampardi, Jr. ,  Hsiang-Chih Sun ,  Hong Shen ,  Mehran Janani ,  Jens Albrecht Riege

IPC分类号： H03F3/213 ,  H03F3/19 ,  H03F1/02 ,  H03F3/21 ,  H03F3/195 ,  H03F3/24 ,  H01L23/522 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L21/8252 ,  H01L27/06 ,  H01L23/498 ,  H01L23/50 ,  H03F3/60 ,  H01L29/20 ,  H01L23/48 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/66 ,  H01L23/31 ,  H01L21/768 ,  H03F3/187 ,  H03F3/347 ,  H01L29/8605 ,  H01L27/092 ,  H03F3/45 ,  H01L29/06 ,  H01L29/10

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： One aspect of this disclosure is a power amplifier module that includes a power amplifier configured to amplify a radio frequency (RF) signal and tantalum nitride terminated through wafer via. The power amplifier includes a heterojunction bipolar transistor and a p-type field effect transistor, in which a semiconductor portion of the p-type field effect transistor corresponds to a channel includes the same type of semiconductor material as a collector layer of the heterojunction bipolar transistor. A metal layer in the tantalum nitride terminated through wafer via is included in an electrical connection between the power amplifier on a front side of a substrate and a conductive layer on a back side of the substrate. Other embodiments of the module are provided along with related methods and components thereof.

公开(公告)号：US20150326182A1

公开(公告)日：2015-11-12

申请号：US14686585

申请日：2015-04-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, JR. ,  Guohao Zhang

IPC分类号： H03F1/02 ,  H03F3/21 ,  H03F3/19

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的连接处具有至少约3×1016cm-3的掺杂浓度， 所述收集器还具有至少第一分级，其中掺杂浓度从所述基底增加; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US09041472B2

公开(公告)日：2015-05-26

申请号：US13917384

申请日：2013-06-13

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Howard E. Chen ,  Yifan Guo ,  Dinhphuoc Vu Hoang ,  Mehran Janani ,  Tin Myint Ko ,  Philip John Lehtola ,  Anthony James LoBianco ,  Hardik Bhupendra Modi ,  Hoang Mong Nguyen ,  Matthew Thomas Ozalas ,  Sandra Louise Petty-Weeks ,  Matthew Sean Read ,  Jens Albrecht Riege ,  David Steven Ripley ,  Hongxiao Shao ,  Hong Shen ,  Weimin Sun ,  Hsiang-Chih Sun ,  Patrick Lawrence Welch ,  Peter J. Zampardi, Jr. ,  Guohao Zhang

IPC分类号： H03F3/14 ,  H03F3/19 ,  H03F3/24 ,  H01L23/552 ,  H01L23/66 ,  H01L23/00 ,  H01L29/36 ,  H01L29/66 ,  H01L29/737 ,  H01L29/812 ,  H01L29/08 ,  H01L29/205 ,  H01L27/06 ,  H01L29/8605 ,  H01L21/8252 ,  H01L27/092

CPC分类号： H03F1/0205 ,  H01L21/485 ,  H01L21/4853 ,  H01L21/4864 ,  H01L21/565 ,  H01L21/76898 ,  H01L21/78 ,  H01L21/8249 ,  H01L21/8252 ,  H01L22/14 ,  H01L23/3114 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49844 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/50 ,  H01L23/522 ,  H01L23/552 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L24/97 ,  H01L27/0605 ,  H01L27/0623 ,  H01L27/092 ,  H01L29/0684 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/20 ,  H01L29/205 ,  H01L29/36 ,  H01L29/66242 ,  H01L29/66863 ,  H01L29/737 ,  H01L29/7371 ,  H01L29/812 ,  H01L29/8605 ,  H01L2223/6611 ,  H01L2223/6616 ,  H01L2223/6644 ,  H01L2223/665 ,  H01L2223/6655 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05554 ,  H01L2224/05644 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48177 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48611 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48811 ,  H01L2224/48816 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4903 ,  H01L2224/49111 ,  H01L2224/49176 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85411 ,  H01L2224/85416 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00011 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12033 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/3025 ,  H03F1/565 ,  H03F3/187 ,  H03F3/19 ,  H03F3/195 ,  H03F3/21 ,  H03F3/213 ,  H03F3/245 ,  H03F3/347 ,  H03F3/45 ,  H03F3/60 ,  H03F2200/387 ,  H03F2200/451 ,  H03F2200/48 ,  H03F2200/555 ,  H01L2924/00 ,  H01L2924/00014

摘要： A power amplifier module includes a power amplifier including a GaAs bipolar transistor having a collector, a base abutting the collector, and an emitter, the collector having a doping concentration of at least about 3×1016 cm−3 at a junction with the base, the collector also having at least a first grading in which doping concentration increases away from the base; and an RF transmission line driven by the power amplifier, the RF transmission line including a conductive layer and finish plating on the conductive layer, the finish plating including a gold layer, a palladium layer proximate the gold layer, and a diffusion barrier layer proximate the palladium layer, the diffusion barrier layer including nickel and having a thickness that is less than about the skin depth of nickel at 0.9 GHz. Other embodiments of the module are provided along with related methods and components thereof.

摘要翻译： 功率放大器模块包括功率放大器，其包括具有集电极的GaAs双极晶体管，邻接集电极的基极和发射极，该集电极在与基极的连接处具有至少约3×1016cm-3的掺杂浓度， 所述收集器还具有至少第一分级，其中掺杂浓度从所述基底增加; 以及由功率放大器驱动的RF传输线，RF传输线包括在导电层上的导电层和精整电镀，精加工镀层包括金层，接近金层的钯层和靠近金层的扩散阻挡层 钯层，扩散阻挡层包括镍，并且其厚度小于0.9GHz处的镍的趋肤深度。 模块的其他实施例与其相关方法和组件一起提供。

公开(公告)号：US20200083202A1

公开(公告)日：2020-03-12

申请号：US16683592

申请日：2019-11-14

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Jiro Yota ,  Hong Shen ,  Viswanathan Ramanathan

IPC分类号： H01L25/16 ,  H01L23/06 ,  H03H3/02 ,  H03H9/10 ,  H03H9/05 ,  H03H9/64 ,  H01L21/683 ,  H01L23/48 ,  H01L23/00 ,  H03H3/08 ,  H01L21/306 ,  H01L23/31 ,  H01L23/58 ,  H01L41/047

摘要： A method of fabricating an electronics package includes forming a cavity in a first surface of a semiconductor substrate, forming one or more passive devices on the semiconductor substrate, forming a microelectromechanical device on a piezoelectric substrate, and bonding the semiconductor substrate to the piezoelectric substrate with the microelectromechanical device disposed within the cavity.

公开(公告)号：US20190333816A1

公开(公告)日：2019-10-31

申请号：US16412929

申请日：2019-05-15

申请人： Skyworks Solutions, Inc.

发明人： Hong Shen

IPC分类号： H01L21/768 ,  H01L23/495 ,  H01L23/00 ,  H01L21/683 ,  H01L23/482

摘要： Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Various protocols can be employed during processing to avoid cross-contamination between copper-plated and non-copper-plated wafers. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

公开(公告)号：US09666508B2

公开(公告)日：2017-05-30

申请号：US15352240

申请日：2016-11-15

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Hong Shen

IPC分类号： H01L23/48 ,  H01L23/00

CPC分类号： H01L23/481 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49551 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/6834 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02371 ,  H01L2224/0239 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32012 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2224/83143 ,  H01L2224/83192 ,  H01L2224/83411 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/10329 ,  H01L2924/142 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/01023 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/0665

摘要： Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Direct die solder (DDS) attach can be achieved by use of electroless nickel plating of the copper contact layer followed by a palladium flash. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

公开(公告)号：US20160020146A1

公开(公告)日：2016-01-21

申请号：US14808250

申请日：2015-07-24

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Hong Shen

IPC分类号： H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/4827 ,  H01L23/49513 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/6834 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/92247 ,  H01L2924/01029 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： Systems, apparatuses, and methods related to the design, fabrication, and manufacture of gallium arsenide (GaAs) integrated circuits are disclosed. Copper can be used as the contact material for a GaAs integrated circuit. Metallization of the wafer and through-wafer vias can be achieved through copper plating processes disclosed herein. Various protocols can be employed during processing to avoid cross-contamination between copper-plated and non-copper-plated wafers. GaAs integrated circuits can be singulated, packaged, and incorporated into various electronic devices.

摘要翻译： 公开了与砷化镓（GaAs）集成电路的设计，制造和制造相关的系统，装置和方法。 铜可以用作GaAs集成电路的接触材料。 通过本文公开的铜电镀工艺可以实现晶片和晶片通孔的金属化。 在处理过程中可采用各种方案，以避免镀铜和非镀铜晶圆之间的交叉污染。 GaAs集成电路可以单片化，封装并结合到各种电子设备中。

公开(公告)号：US20150364411A1

公开(公告)日：2015-12-17

申请号：US14643884

申请日：2015-03-10

申请人： SKYWORKS SOLUTIONS, INC.

发明人： Hong Shen

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/522

CPC分类号： H01L23/481 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/49541 ,  H01L23/49548 ,  H01L23/49551 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/94 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2221/68331 ,  H01L2221/6834 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/02371 ,  H01L2224/0239 ,  H01L2224/03424 ,  H01L2224/03464 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/32012 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2224/83143 ,  H01L2224/83192 ,  H01L2224/83411 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83815 ,  H01L2224/83851 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2924/10156 ,  H01L2924/10157 ,  H01L2924/10329 ,  H01L2924/142 ,  H01L2924/15311 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/3651 ,  H01L2924/00014 ,  H01L2224/03 ,  H01L2924/00012 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/01023 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/0665

摘要： Electronic devices, and methods of manufacturing the electronic devices, utilizing direct die soldering of GaAs integrated circuit dies. In some embodiments, the GaAs integrated circuit die can have a footprint approximately the same size as a die attach pad. Further, the GaAs integrated circuit die can self-align with the die attach pad after reflow of any solder layer used to attach the die.

摘要翻译： 电子器件以及使用GaAs集成电路管芯的直接焊接的电子器件的制造方法。 在一些实施例中，GaAs集成电路管芯可以具有与管芯附接焊盘大致相同尺寸的封装。 此外，在用于附接裸片的任何焊料层回流之后，GaAs集成电路管芯可以与管芯附接焊盘自对准。