公开(公告)号：US20150279815A1

公开(公告)日：2015-10-01

申请号：US14228769

申请日：2014-03-28

Applicant: STATS ChipPAC, Ltd.

Inventor： Byung Tai Do ,  Arnel Trasporto ,  Sung Soo Kim

IPC: H01L25/065 ,  H01L23/498 ,  H01L21/48 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L25/0655 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05573 ,  H01L2224/05575 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/16237 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81411 ,  H01L2224/81424 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2225/107 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10324 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/13091 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/01082 ,  H01L2224/81805 ,  H01L2224/45099

Abstract: A semiconductor device has a first conductive layer disposed over a carrier. A second conductive layer is formed over a first surface of the first conductive layer. A first insulating layer is formed over the first and second conductive layers. A third conductive layer is formed over the first insulating layer. A second insulating layer is formed over the third conductive layer. The carrier is removed to expose the first conductive layer. A portion of the first conductive layer is removed from a second surface of the first conductive layer opposite the first surface to form a plurality of conductive pillars. The conductive pillars include a height of 100 micrometers or greater. The portion of the first conductive layer is removed using an etching process. The conductive pillars are disposed over a first semiconductor package. A semiconductor die or second semiconductor package is disposed over the second conductive layer.

Abstract translation: 半导体器件具有设置在载体上的第一导电层。 在第一导电层的第一表面上形成第二导电层。 在第一和第二导电层上形成第一绝缘层。 在第一绝缘层上形成第三导电层。 在第三导电层上形成第二绝缘层。 移除载体以露出第一导电层。 第一导电层的一部分从与第一表面相对的第一导电层的第二表面去除以形成多个导电柱。 导电柱包括100微米或更大的高度。 使用蚀刻工艺去除第一导电层的部分。 导电柱设置在第一半导体封装之上。 半导体管芯或第二半导体封装设置在第二导电层上。