SEMICONDUCTOR LIGHT EMITTING DEVICE

    公开(公告)号:US20210351330A1

    公开(公告)日:2021-11-11

    申请号:US17385193

    申请日:2021-07-26

    Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    2.
    发明申请

    公开(公告)号:US20200328329A1

    公开(公告)日:2020-10-15

    申请号:US16913201

    申请日:2020-06-26

    Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

    METHOD OF MANUFACTURING DISPLAY MODULE USING LED

    公开(公告)号:US20190371779A1

    公开(公告)日:2019-12-05

    申请号:US16185602

    申请日:2018-11-09

    Abstract: A method of manufacturing a display module includes preparing a first substrate structure including an light-emitting diode (LED) array containing a plurality of LED cells, electrode pads connected to the first and second conductivity-type semiconductor layers, and a first bonding layer covering the LED array; preparing a second substrate structure including a plurality of thin-film transistor (TFT) cells disposed on a second substrate, and each having a source region, a drain region and a gate electrode disposed therebetween, the second substrate structure being provided by forming a circuit region, in which connection portions disposed to correspond to the electrode pads are exposed to one surface thereof, and by forming a second bonding layer covering the circuit region, respectively planarizing the first and second bonding layers, and bonding the first and second substrate structures to each other.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    5.
    发明申请

    公开(公告)号:US20200105980A1

    公开(公告)日:2020-04-02

    申请号:US16299422

    申请日:2019-03-12

    Abstract: A semiconductor light emitting device includes a plurality of light emitting structures, an isolation layer covering side surfaces of the plurality of light emitting structures and insulating the plurality of light emitting structures from one another, a partition layer formed on the isolation layer, a first protective layer covering top surfaces of the plurality of light emitting structures and side walls of the partition layer, a reflective layer covering the first protective layer and disposed on the side walls of the partition layer, and a second protective layer covering the reflective layer.

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