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    Printing press
    3.
    发明授权
    Printing press 有权
    印刷机

    公开(公告)号：US08696108B2

    公开(公告)日：2014-04-15

    申请号：US13322230

    申请日：2010-05-21

    申请人： Hideaki Sakurai ,  Shoichi Aoki ,  Makoto Kaji ,  Norifumi Tasaka

    发明人： Hideaki Sakurai ,  Shoichi Aoki ,  Makoto Kaji ,  Norifumi Tasaka

    IPC分类号： B41J2/01

    CPC分类号： B41J3/546 ,  B41F13/02 ,  B41F19/007

    摘要： In a printing press, it is configured such that a newspaper web offset printing press is composed by a feeder device, a printing device, a guiding device, a turn bar device, and a folding unit; as a guiding device, there are provided an upstream side guide roller and a downstream side guide roller which are disposed with a predetermined interval along a transportation direction of a web for guiding transportation of the web; and there is disposed an ink-jet printer for performing digital printing on the web guided between the guide rollers. By setting diameters of the upstream side guide roller and the downstream side guide roller to different values, vibration of the print medium which is transported while being guided by the guide rollers is suppressed, and the print quality is thereby improved.

    摘要翻译： 在印刷机中，由纸送纸装置，印刷装置，引导装置，转杆装置和折叠单元构成报纸卷筒纸胶版印刷机。 作为引导装置，设置有沿着幅材的传送方向以预定间隔布置的上游侧引导辊和下游侧引导辊，用于引导幅材的传送; 并且设置有用于在引导辊之间引导的幅材上进行数字印刷的喷墨打印机。 通过将上游侧引导辊和下游侧引导辊的直径设定为不同的值，可以抑制在被引导辊引导的同时传送的打印介质的振动，从而提高打印质量。

    METHOD FOR PRODUCING FERROELECTRIC THIN FILM
    4.
    发明申请
    METHOD FOR PRODUCING FERROELECTRIC THIN FILM 有权
    生产薄膜薄膜的方法

    公开(公告)号：US20120295099A1

    公开(公告)日：2012-11-22

    申请号：US13471796

    申请日：2012-05-15

    申请人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

    发明人： Toshiaki Watanabe ,  Hideaki Sakurai ,  Nobuyuki Soyama ,  Toshihiro Doi

    IPC分类号： B05D5/12 ,  B32B5/00

    CPC分类号： H01L21/02197 ,  B05D3/0254 ,  B05D5/00 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/28291 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75 ,  H01L41/0815 ,  H01L41/319 ,  Y10T428/249921 ,  Y10T428/25 ,  Y10T428/26 ,  Y10T428/265

    摘要： A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of a orientation controlling layer b coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

    摘要翻译： 一种铁电薄膜的制造方法，其特征在于，在具有基板主体的基板的基极上涂布形成铁电薄膜的组合物和在（111）方向上取向晶面的基极，煅烧所述涂布组合物 ，然后进行焙烧，使涂布组合物结晶，使基极上形成强电介质薄膜，其特征在于：在基极上形成涂布组合物的取向控制层b，煅烧涂布组合物， 对涂覆在基极上的组合物的量进行控制，使得结晶后的取向控制层的厚度在35nm〜150nm的范围内，从而控制该涂层组合物的优选结晶取向 （100）平面中的取向控制层。

    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same
    5.
    发明申请
    Method for manufacturing thin film capacitor and thin film capacitor obtained by the same 有权
    制造薄膜电容器和薄膜电容器的方法

    公开(公告)号：US20120001298A1

    公开(公告)日：2012-01-05

    申请号：US13067800

    申请日：2011-06-28

    申请人： Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama ,  Guillaume Guegan

    发明人： Hideaki Sakurai ,  Toshiaki Watanabe ,  Nobuyuki Soyama ,  Guillaume Guegan

    IPC分类号： H01L29/92 ,  H01L21/02

    CPC分类号： H01L28/60 ,  B82Y30/00 ,  C04B35/4682 ,  C04B2235/3213 ,  C04B2235/441 ,  C04B2235/781 ,  C04B2235/785 ,  C04B2235/787 ,  H01G4/01 ,  H01G4/1227 ,  H01G4/33 ,  H01L21/02197 ,  H01L21/02282 ,  H01L28/55 ,  H01L28/65

    摘要： A thin film capacitor is characterized by forming a lower electrode, coating a composition onto the lower electrode without applying an annealing process having a temperature of greater than 300° C., drying at a predetermined temperature within a range from ambient temperature to 500° C., and calcining at a predetermined temperature within a range of 500 to 800° C. and higher than a drying temperature. The process from coating to calcining is performed the process from coating to calcining once or at least twice, or the process from coating to drying is performed at least twice, and then calcining is performed once. The thickness of the dielectric thin film formed after the first calcining is 20 to 600 nm. The ratio of the thickness of the lower electrode and the thickness of the dielectric thin film formed after the initial calcining step (thickness of lower electrode/thickness of the dielectric thin film) is preferably in the range 0.10 to 15.0.

    摘要翻译： 薄膜电容器的特征在于形成下电极，在不施加温度大于300℃的退火工艺的情况下将组合物涂覆在下电极上，在从环境温度至500℃的范围内的预定温度下干燥 并在500〜800℃的范围内的预定温度下煅烧并高于干燥温度。 从涂覆到煅烧的过程进行从涂覆到煅烧一次或至少两次的过程，或者从涂覆到干燥的过程进行至少两次，然后进行一次煅烧。 在第一次煅烧后形成的电介质薄膜的厚度为20〜600nm。 初始煅烧步骤后形成的下部电极的厚度与电介质薄膜的厚度之比（下部电极的厚度/电介质薄膜的厚度）优选在0.10〜15.0的范围内。

    SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD
    6.
    发明申请
    SUBSTRATE PROCESSING METHOD AND MASK MANUFACTURING METHOD 审中-公开
    基板处理方法和掩模制造方法

    公开(公告)号：US20090305153A1

    公开(公告)日：2009-12-10

    申请号：US12479202

    申请日：2009-06-05

    申请人： Hideaki Sakurai ,  Yukio Oppata ,  Masamitsu Itoh

    发明人： Hideaki Sakurai ,  Yukio Oppata ,  Masamitsu Itoh

    IPC分类号： G03F7/20 ,  B08B3/04 ,  B08B7/04

    CPC分类号： G03F1/82 ,  B08B3/00 ,  B08B3/024 ,  B08B2203/0229 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67253

    摘要： A substrate processing method uses a processing fluid to selectively process only a region of a portion of a processing surface of a substrate to be processed, by causing a discharge aperture and a suction aperture of a nozzle having the discharge aperture and the suction aperture for the processing fluid and provided movable relative to the substrate to be processed to face the processing surface of the substrate and suctioning the processing fluid supplied onto the processing surface through the suction aperture while supplying the processing fluid from the discharge aperture onto the processing surface.

    摘要翻译： 基板处理方法使用处理流体仅通过使具有排出孔的喷嘴的排出孔和吸入孔和用于该待处理的基板的吸入孔的吸入孔选择性地处理待处理的基板的一部分的处理表面的区域 处理流体，并且相对于要处理的基板可移动以面对基板的处理表面，并且通过所述吸入孔抽吸供给到处理表面上的处理流体，同时将处理流体从排出孔提供到处理表面。

    Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product
    7.
    发明授权
    Pattern forming method, photomask manufacturing method, semiconductor device manufacturing method, and computer program product 有权
    图案形成方法，光掩模制造方法，半导体器件制造方法和计算机程序产品

    公开(公告)号：US07608368B2

    公开(公告)日：2009-10-27

    申请号：US11342677

    申请日：2006-01-31

    申请人： Hideaki Sakurai ,  Tooru Shibata ,  Masato Saito ,  Masamitsu Itoh

    发明人： Hideaki Sakurai ,  Tooru Shibata ,  Masato Saito ,  Masamitsu Itoh

    IPC分类号： G03F9/00 ,  G03C5/00

    CPC分类号： G03F7/70625 ,  G03F7/70558 ,  Y10S430/143

    摘要： A pattern forming method includes developing a resist film on a main surface of a substrate by flowing a developing solution on the film to form a resist pattern, the developing the film including partitioning the surface into M (≧2) regions and determining correction exposure dose for each of the M region, the determining the correction exposure dose including determining a correction exposure dose for an i-th (1≦i≦M) region so that an actual pattern dimension of a pattern on the i-th region matches a design pattern dimension based on a pattern opening ratio of a pattern to be formed on the substrate, the pattern being located on a region which is further upstream region than the i-th region with respect to an upstream direction of a flow of the solution, and forming the pattern by etching the substrate using the resist pattern as a mask.

    摘要翻译： 图案形成方法包括通过使显影溶液流到膜上以形成抗蚀剂图案，在基板的主表面上显影抗蚀剂膜，显影该膜包括将表面划分成M（> = 2）区域并确定校正曝光 确定校正曝光剂量，包括确定第i（1≤i≤M）区域的校正曝光剂量，使得第i个区域上的图案的实际图案尺寸 基于要在衬底上形成的图案的图案开口率来匹配设计图案尺寸，该图案位于比第i个区域的上游方向更靠上游区域的区域上 溶液，并且通过使用抗蚀剂图案作为掩模来蚀刻基板来形成图案。

    Developing method, substrate treating method, and substrate treating apparatus
    9.
    发明授权
    Developing method, substrate treating method, and substrate treating apparatus 有权
    显影方法，基板处理方法和基板处理装置

    公开(公告)号：US06929903B2

    公开(公告)日：2005-08-16

    申请号：US10653611

    申请日：2003-08-28

    申请人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

    发明人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

    IPC分类号： G03F7/30 ,  H01L21/027 ,  H01L21/304 ,  G03D15/00

    CPC分类号： G03F7/30 ,  Y10S438/906

    摘要： A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

    摘要翻译： 一种显影方法包括：预先确定显影液中的抗蚀剂溶解浓度与显影液的抵抗溶解速度的关系，提前估计抗蚀剂溶解浓度，其中抗蚀剂溶解速度为所需速度或更高的关系，显影 在显影液中的抗蚀剂溶解浓度为估计的溶解浓度以下的状态。

    Developing method, substrate treating method, and substrate treating apparartus
    10.
    发明申请
    Developing method, substrate treating method, and substrate treating apparartus 有权
    显影方法，底物处理方法和底物处理方法

    公开(公告)号：US20050081996A1

    公开(公告)日：2005-04-21

    申请号：US10969018

    申请日：2004-10-21

    申请人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

    发明人： Masamitsu Itoh ,  Ikuo Yoneda ,  Hideaki Sakurai

    IPC分类号： G03F7/30 ,  H01L21/027 ,  H01L21/304 ,  C23F1/00

    CPC分类号： G03F7/30 ,  Y10S438/906

    摘要： A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissolution speed is a desired speed or more from the relation, and developing in a state in which the resist dissolution concentration in the developing solution is the estimated dissolution concentration or less.

    摘要翻译： 一种显影方法包括：预先确定显影液中的抗蚀剂溶解浓度与显影液的抵抗溶解速度的关系，提前估计抗蚀剂溶解浓度，其中抗蚀剂溶解速度为所需速度或更高的关系，显影 在显影液中的抗蚀剂溶解浓度为估计的溶解浓度以下的状态。