公开(公告)号：US20170144221A1

公开(公告)日：2017-05-25

申请号：US15316684

申请日：2015-06-12

申请人： Alpha Metals, Inc.

发明人： Shamik GHOSHAL ,  V. Sathish KUMAR ,  Pavan VISHWANATH ,  Ranjit S. PANDHER ,  Remya CHANDRAN ,  Sutapa MUKHERJEE ,  Siuli SARKAR ,  Bawa SINGH ,  Ravindra Mohan BHATKAL

IPC分类号： B22F1/00 ,  B23K3/06 ,  H01L21/78 ,  B23K35/30 ,  B22F1/02 ,  H01L23/00 ,  B23K1/00 ,  B23K35/02

CPC分类号： B22F1/0044 ,  B22F1/02 ,  B22F3/1017 ,  B22F3/22 ,  B22F5/006 ,  B22F7/04 ,  B22F2007/047 ,  B22F2301/255 ,  B22F2999/00 ,  B23K1/0016 ,  B23K3/0607 ,  B23K35/0244 ,  B23K35/3006 ,  B23K2101/40 ,  H01L21/6835 ,  H01L21/78 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L24/94 ,  H01L24/95 ,  H01L24/97 ,  H01L2221/68313 ,  H01L2221/68368 ,  H01L2224/04026 ,  H01L2224/05155 ,  H01L2224/05639 ,  H01L2224/11003 ,  H01L2224/11009 ,  H01L2224/111 ,  H01L2224/11332 ,  H01L2224/11334 ,  H01L2224/11438 ,  H01L2224/1144 ,  H01L2224/11505 ,  H01L2224/11848 ,  H01L2224/13139 ,  H01L2224/13294 ,  H01L2224/13295 ,  H01L2224/13311 ,  H01L2224/13324 ,  H01L2224/13339 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13363 ,  H01L2224/1338 ,  H01L2224/13384 ,  H01L2224/13387 ,  H01L2224/1339 ,  H01L2224/13393 ,  H01L2224/13411 ,  H01L2224/13439 ,  H01L2224/13444 ,  H01L2224/13455 ,  H01L2224/13464 ,  H01L2224/13469 ,  H01L2224/1349 ,  H01L2224/16227 ,  H01L2224/27002 ,  H01L2224/27003 ,  H01L2224/27009 ,  H01L2224/271 ,  H01L2224/27312 ,  H01L2224/2732 ,  H01L2224/27332 ,  H01L2224/27334 ,  H01L2224/27438 ,  H01L2224/2744 ,  H01L2224/27505 ,  H01L2224/2782 ,  H01L2224/27821 ,  H01L2224/27848 ,  H01L2224/29139 ,  H01L2224/29294 ,  H01L2224/29295 ,  H01L2224/29311 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29363 ,  H01L2224/29364 ,  H01L2224/2938 ,  H01L2224/29384 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/29393 ,  H01L2224/29411 ,  H01L2224/29439 ,  H01L2224/29444 ,  H01L2224/29455 ,  H01L2224/29464 ,  H01L2224/29469 ,  H01L2224/2949 ,  H01L2224/2969 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45014 ,  H01L2224/75251 ,  H01L2224/75316 ,  H01L2224/7598 ,  H01L2224/81002 ,  H01L2224/81191 ,  H01L2224/8184 ,  H01L2224/81948 ,  H01L2224/83002 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83222 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/83948 ,  H01L2224/94 ,  H01L2224/95 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/0463 ,  H01L2924/0503 ,  H01L2924/05032 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/2064 ,  H05K3/32 ,  H05K2203/1131 ,  B22F1/0018 ,  B22F1/025 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/27 ,  H01L2924/01046 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01006 ,  H01L2924/01005 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/206

摘要： Methods for die attachment of multichip and single components including flip chips may involve printing a sintering paste on a substrate or on the back side of a die. Printing may involve stencil printing, screen printing, or a dispensing process. Paste may be printed on the back side of an entire wafer prior to dicing, or on the back side of an individual die. Sintering films may also be fabricated and transferred to a wafer, die or substrate. A post-sintering step may increase throughput.

公开(公告)号：US20180200840A1

公开(公告)日：2018-07-19

申请号：US15746536

申请日：2016-07-19

申请人： Northeastem University ,  University of North Florida

发明人： Stephen Peter Stagon ,  Hanchen Huang ,  Paul Robert Elliott

IPC分类号： B23K35/26 ,  B23K35/02 ,  H01L23/00

CPC分类号： B23K35/264 ,  B23K35/02 ,  B23K35/0227 ,  B23K35/0261 ,  B23K35/26 ,  B23K2101/40 ,  B23K2101/42 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/04026 ,  H01L2224/05082 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05178 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05583 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/27418 ,  H01L2224/27444 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2782 ,  H01L2224/29005 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/2919 ,  H01L2224/29205 ,  H01L2224/29209 ,  H01L2224/29211 ,  H01L2224/29213 ,  H01L2224/2929 ,  H01L2224/29299 ,  H01L2224/293 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29316 ,  H01L2224/29318 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/3201 ,  H01L2224/32012 ,  H01L2224/32501 ,  H01L2224/32506 ,  H01L2224/83099 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83805 ,  H01L2224/8385 ,  H01L2924/01014 ,  H01L2924/01322 ,  H01L2924/00014 ,  H01L2924/05341 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/00012 ,  H01L2924/0102

摘要： Bonded surfaces are formed by adhering first nanorods and second nanorods to respective first and second surfaces. The first shell is formed on the first nanorods and the second shell is formed on the second nanorods, wherein at least one of the first nanorods and second nanorods, and the first shell and the second shell are formed of distinct metals. The surfaces are then exposed to at least one condition that causes the distinct metals to form an alloy, such as eutectic alloy having a melting point below the temperature at which the alloy is formed, thereby bonding the surfaces upon which solidification of the alloy.

公开(公告)号：US08377798B2

公开(公告)日：2013-02-19

申请号：US12943281

申请日：2010-11-10

申请人： Jung-Huei Peng ,  Hsin-Ting Huang ,  Yao-Te Huang ,  Shang-Ying Tsai ,  Ping-Yin Liu

发明人： Jung-Huei Peng ,  Hsin-Ting Huang ,  Yao-Te Huang ,  Shang-Ying Tsai ,  Ping-Yin Liu

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/311

CPC分类号： H01L25/0657 ,  B81C1/00269 ,  B81C2203/019 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/2782 ,  H01L2224/2783 ,  H01L2224/27831 ,  H01L2224/2784 ,  H01L2224/27848 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29611 ,  H01L2224/29617 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29655 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/3207 ,  H01L2224/32148 ,  H01L2224/32505 ,  H01L2224/83011 ,  H01L2224/83012 ,  H01L2224/83014 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01013 ,  H01L2224/83

摘要： A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method for forming an eutectic at the bonding interface to reduce the impact of any native oxide formation at the bonding interface.

摘要翻译： 在一个实施例中，用于半导体封装中的晶片到晶片结合的方法提供了使结合表面粗糙化的方法。 还提供了一种用于在接合期间被迫离开接合界面的较低熔点材料钝化接合表面的方法。 还提供了在键合界面处形成共晶的方法，以减少接合界面处的任何自然氧化物形成的影响。

公开(公告)号：US11735556B2

公开(公告)日：2023-08-22

申请号：US17464098

申请日：2021-09-01

申请人： Mikuni Electron Corporation

发明人： Sakae Tanaka

IPC分类号： H01L23/00 ,  H01R4/02 ,  H01R4/04 ,  H01R43/24 ,  H01R13/405

CPC分类号： H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01R4/029 ,  H01R4/04 ,  H01R13/405 ,  H01R43/24 ,  H01L2224/27003 ,  H01L2224/2711 ,  H01L2224/2782 ,  H01L2224/27334 ,  H01L2224/29499 ,  H01L2224/3011 ,  H01L2224/32227 ,  H01L2224/33106 ,  H01L2224/838 ,  H01L2224/83871 ,  H01L2224/83874

摘要： A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

公开(公告)号：US20120115305A1

公开(公告)日：2012-05-10

申请号：US12943281

申请日：2010-11-10

申请人： Jung-Huei PENG ,  Hsin-Ting HUANG ,  Yao-Te HUANG ,  Shang-Ying TSAI ,  Ping-Yin LIU

发明人： Jung-Huei PENG ,  Hsin-Ting HUANG ,  Yao-Te HUANG ,  Shang-Ying TSAI ,  Ping-Yin LIU

IPC分类号： H01L21/302

CPC分类号： H01L25/0657 ,  B81C1/00269 ,  B81C2203/019 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/50 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/2782 ,  H01L2224/2783 ,  H01L2224/27831 ,  H01L2224/2784 ,  H01L2224/27848 ,  H01L2224/29082 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/29611 ,  H01L2224/29617 ,  H01L2224/29644 ,  H01L2224/29647 ,  H01L2224/29655 ,  H01L2224/32058 ,  H01L2224/32059 ,  H01L2224/3207 ,  H01L2224/32148 ,  H01L2224/32505 ,  H01L2224/83011 ,  H01L2224/83012 ,  H01L2224/83014 ,  H01L2224/83121 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/94 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01013 ,  H01L2224/83

摘要： A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method for forming an eutectic at the bonding interface to reduce the impact of any native oxide formation at the bonding interface.

摘要翻译： 在一个实施例中，用于半导体封装中的晶片到晶片接合的方法提供了使结合表面粗糙化的方法。 还提供了一种用于在接合期间被迫离开接合界面的较低熔点材料钝化接合表面的方法。 还提供了在键合界面处形成共晶的方法，以减少接合界面处的任何自然氧化物形成的影响。