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公开(公告)号：US09673167B2
公开(公告)日：2017-06-06
申请号：US14416297
申请日：2012-07-26
申请人： Markus Wimplinger
发明人： Markus Wimplinger
CPC分类号： H01L24/83 , B32B37/24 , B32B38/0008 , B32B2037/243 , B32B2037/246 , B32B2457/14 , C23C14/08 , C23C14/081 , C23C14/086 , C23C16/40 , C23C16/403 , C23C16/407 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/75 , H01L31/18 , H01L2224/2741 , H01L2224/27418 , H01L2224/2745 , H01L2224/27452 , H01L2224/278 , H01L2224/27848 , H01L2224/2908 , H01L2224/29187 , H01L2224/29287 , H01L2224/29394 , H01L2224/29395 , H01L2224/3201 , H01L2224/32145 , H01L2224/32501 , H01L2224/7501 , H01L2224/75101 , H01L2224/83001 , H01L2224/83002 , H01L2224/83011 , H01L2224/83012 , H01L2224/83013 , H01L2224/83065 , H01L2224/83075 , H01L2224/8322 , H01L2224/8383 , H01L2224/83896 , H01L2224/83907 , H01L2924/01009 , H01L2924/01013 , H01L2924/0103 , H01L2924/01031 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/053 , H01L2924/12042 , H01L2924/20102 , H01L2924/0549 , H01L2924/00014 , H01L2924/00012 , H01L2924/0531 , H01L2924/01001 , H01L2924/01008 , H01L2924/00
摘要： This invention relates to a method for bonding of a first contact area of a first at least largely transparent substrate to a second contact area of a second at least largely transparent substrate, on at least one of the contact areas an oxide being used for bonding, from which an at least largely transparent interconnection layer is formed with an electrical conductivity of at least 10e1 S/cm2 (measurement: four point method, relative to temperature of 300K) and an optical transmittance greater than 0.8 (for a wavelength range from 400 nm to 1500 nm) on the first and second contact area.
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2.发明授权公开(公告)号：US08377798B2
公开(公告)日：2013-02-19
申请号：US12943281
申请日：2010-11-10
申请人： Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Shang-Ying Tsai , Ping-Yin Liu
发明人： Jung-Huei Peng , Hsin-Ting Huang , Yao-Te Huang , Shang-Ying Tsai , Ping-Yin Liu
IPC分类号： H01L21/30 , H01L21/46 , H01L21/311
CPC分类号： H01L25/0657 , B81C1/00269 , B81C2203/019 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L25/50 , H01L2224/2745 , H01L2224/27452 , H01L2224/2746 , H01L2224/2782 , H01L2224/2783 , H01L2224/27831 , H01L2224/2784 , H01L2224/27848 , H01L2224/29082 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29611 , H01L2224/29617 , H01L2224/29644 , H01L2224/29647 , H01L2224/29655 , H01L2224/32058 , H01L2224/32059 , H01L2224/3207 , H01L2224/32148 , H01L2224/32505 , H01L2224/83011 , H01L2224/83012 , H01L2224/83014 , H01L2224/83121 , H01L2224/83193 , H01L2224/83203 , H01L2224/94 , H01L2924/01322 , H01L2924/10157 , H01L2924/1461 , H01L2924/00014 , H01L2924/01032 , H01L2924/01014 , H01L2924/01013 , H01L2224/83
摘要： A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method for forming an eutectic at the bonding interface to reduce the impact of any native oxide formation at the bonding interface.
摘要翻译： 在一个实施例中，用于半导体封装中的晶片到晶片结合的方法提供了使结合表面粗糙化的方法。 还提供了一种用于在接合期间被迫离开接合界面的较低熔点材料钝化接合表面的方法。 还提供了在键合界面处形成共晶的方法，以减少接合界面处的任何自然氧化物形成的影响。
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公开(公告)号：US20150179604A1
公开(公告)日：2015-06-25
申请号：US14416297
申请日：2012-07-26
申请人： Markus Wimplinger
发明人： Markus Wimplinger
CPC分类号： H01L24/83 , B32B37/24 , B32B38/0008 , B32B2037/243 , B32B2037/246 , B32B2457/14 , C23C14/08 , C23C14/081 , C23C14/086 , C23C16/40 , C23C16/403 , C23C16/407 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/75 , H01L31/18 , H01L2224/2741 , H01L2224/27418 , H01L2224/2745 , H01L2224/27452 , H01L2224/278 , H01L2224/27848 , H01L2224/2908 , H01L2224/29187 , H01L2224/29287 , H01L2224/29394 , H01L2224/29395 , H01L2224/3201 , H01L2224/32145 , H01L2224/32501 , H01L2224/7501 , H01L2224/75101 , H01L2224/83001 , H01L2224/83002 , H01L2224/83011 , H01L2224/83012 , H01L2224/83013 , H01L2224/83065 , H01L2224/83075 , H01L2224/8322 , H01L2224/8383 , H01L2224/83896 , H01L2224/83907 , H01L2924/01009 , H01L2924/01013 , H01L2924/0103 , H01L2924/01031 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/053 , H01L2924/12042 , H01L2924/20102 , H01L2924/0549 , H01L2924/00014 , H01L2924/00012 , H01L2924/0531 , H01L2924/01001 , H01L2924/01008 , H01L2924/00
摘要： This invention relates to a method for bonding of a first contact area of a first at least largely transparent substrate to a second contact area of a second at least largely transparent substrate, on at least one of the contact areas an oxide being used for bonding, from which an at least largely transparent interconnection layer is formed with an electrical conductivity of at least 10e1 S/cm2 (measurement: four point method, relative to temperature of 300K) and an optical transmittance greater than 0.8 (for a wavelength range from 400 nm to 1500 nm) on the first and second contact area.
摘要翻译： 本发明涉及一种用于将第一至少大部分透明的基板的第一接触区域与第二至少大部分透明的基板的第二接触区域接合在至少一个接触区域上的方法，所述接触区域是用于接合的氧化物， 形成至少十分透明的互连层，其电导率为至少10e1S / cm 2（测量：四点法，相对于300K的温度），光透射率大于0.8（波长范围为400nm 至1500nm）在第一和第二接触区域上。
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公开(公告)号：US20140159076A1
公开(公告)日：2014-06-12
申请号：US14236930
申请日：2012-05-31
申请人： Yoshiki Sota , Masayuki Ohta , Kazuo Tamaki , Shinji Yamaguchi , Shin Itoh , Tomoshi Kimura , Masaki Tatsumi
发明人： Yoshiki Sota , Masayuki Ohta , Kazuo Tamaki , Shinji Yamaguchi , Shin Itoh , Tomoshi Kimura , Masaki Tatsumi
CPC分类号： H01L33/507 , H01L23/49861 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/156 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2224/83012 , H01L2224/83439 , H01L2224/85012 , H01L2224/85439 , H01L2224/92247 , H01L2924/00014 , H01L2924/12041 , H01L2924/181 , H01L2224/45099 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： Improves light extraction efficiency. A light emitting device 1 using a white resin molding package 5 integrally molded with lead frames 3, 4 constituting an electrode corresponding to one or a plurality of light emitting element 2 and white resin, wherein an area in a plane view of a white resin surface on a reflective surface that is level with amounting surface of the light emitting element 2 is configured to be larger than total area in a plane view occupied by surfaces of the lead frames 3, 4 and the light emitting element. Further, a step section is formed on the surfaces of lead frames 3, 4, white resin is filled in the step section, and the area of white resin surface on a reflective surface where the light emitting element 2 is mounted is increased.
摘要翻译： 提高光提取效率。 一种使用与构成对应于一个或多个发光元件2的电极的引线框架3,4一体模制的白色树脂成型封装5和白色树脂的发光器件1，其中白色树脂表面的平面图中的面积 在与发光元件2的表面平齐的反射面上，在由引线框3,4和发光元件的表面占据的平面图中，大于总面积。 此外，在引线框架3,4的表面上形成台阶部，在台阶部填充有白色树脂，并且增加了安装有发光元件2的反射面上的白色树脂表面的面积。
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公开(公告)号：US09537065B2
公开(公告)日：2017-01-03
申请号：US14236930
申请日：2012-05-31
申请人： Yoshiki Sota , Masayuki Ohta , Kazuo Tamaki , Shinji Yamaguchi , Shin Itoh , Tomoshi Kimura , Masaki Tatsumi
发明人： Yoshiki Sota , Masayuki Ohta , Kazuo Tamaki , Shinji Yamaguchi , Shin Itoh , Tomoshi Kimura , Masaki Tatsumi
CPC分类号： H01L33/507 , H01L23/49861 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/156 , H01L33/60 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/73265 , H01L2224/83012 , H01L2224/83439 , H01L2224/85012 , H01L2224/85439 , H01L2224/92247 , H01L2924/00014 , H01L2924/12041 , H01L2924/181 , H01L2224/45099 , H01L2924/00012 , H01L2924/3512 , H01L2924/00
摘要： Improves light extraction efficiency. A light emitting device 1 using a white resin molding package 5 integrally molded with lead frames 3, 4 constituting an electrode corresponding to one or a plurality of light emitting element 2 and white resin, wherein an area in a plane view of a white resin surface on a reflective surface that is level with amounting surface of the light emitting element 2 is configured to be larger than total area in a plane view occupied by surfaces of the lead frames 3, 4 and the light emitting element. Further, a step section is formed on the surfaces of lead frames 3, 4, white resin is filled in the step section, and the area of white resin surface on a reflective surface where the light emitting element 2 is mounted is increased.
摘要翻译： 提高光提取效率。 一种使用与构成对应于一个或多个发光元件2的电极的引线框架3,4一体模制的白色树脂成型封装5和白色树脂的发光器件1，其中白色树脂表面的平面图中的面积 在与发光元件2的表面平齐的反射面上，在由引线框3,4和发光元件的表面占据的平面图中，大于总面积。 此外，在引线框架3,4的表面上形成台阶部，在台阶部填充有白色树脂，并且增加了安装有发光元件2的反射面上的白色树脂表面的面积。
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6.发明申请METHOD FOR BONDING METALLIC CONTACT AREAS WITH DISSOLUTION OF A SACRIFICIAL LAYER APPLIED ON ONE OF THE CONTACT AREAS IN AT LEAST ONE OF THE CONTACT AREAS 有权用于将金属接触区粘结在一起的解决方案中，应用于联系区域中至少一个接触区域之一的敏感层公开(公告)号：US20160071817A1
公开(公告)日：2016-03-10
申请号：US14787397
申请日：2013-07-05
发明人： Bernhard Rebhan
IPC分类号： H01L23/00
CPC分类号： H01L24/83 , H01L22/12 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/743 , H01L2223/54426 , H01L2224/0345 , H01L2224/03452 , H01L2224/03602 , H01L2224/03616 , H01L2224/0381 , H01L2224/05561 , H01L2224/05564 , H01L2224/05567 , H01L2224/05647 , H01L2224/061 , H01L2224/274 , H01L2224/2741 , H01L2224/27444 , H01L2224/2745 , H01L2224/27452 , H01L2224/27464 , H01L2224/2781 , H01L2224/2784 , H01L2224/27845 , H01L2224/29023 , H01L2224/29028 , H01L2224/29187 , H01L2224/8301 , H01L2224/83011 , H01L2224/83012 , H01L2224/83013 , H01L2224/83026 , H01L2224/8312 , H01L2224/83121 , H01L2224/83203 , H01L2224/8383 , H01L2224/83907 , H01L2924/00014 , H01L2924/01029 , H01L2924/00012 , H01L2924/05442 , H01L2224/05552
摘要： A method for bonding of a first, at least partially metallic contact surface of a first substrate to a second, at least partially metallic contact surface of a second substrate, with the following steps, especially the following progression: application of a sacrificial layer which is at least partially, especially predominantly soluble in the material of at least one of the contact surfaces to at least one of the contact surfaces, bonding of the contact surfaces with at least partial solution of the sacrificial layer in at least one of the contact surfaces.
摘要翻译： 一种用于将第一衬底的第一至少部分金属接触表面接合到第二衬底的第二至少部分金属接触表面的方法，具有以下步骤，特别是以下步骤：施加牺牲层，其为 至少部分地，特别主要地可溶于至少一个接触表面的材料中的至少一个接触表面，接触表面与至少一个接触表面中的牺牲层的至少部分溶液的接合。
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公开(公告)号：US09640510B2
公开(公告)日：2017-05-02
申请号：US14787397
申请日：2013-07-05
发明人： Bernhard Rebhan
CPC分类号： H01L24/83 , H01L22/12 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/743 , H01L2223/54426 , H01L2224/0345 , H01L2224/03452 , H01L2224/03602 , H01L2224/03616 , H01L2224/0381 , H01L2224/05561 , H01L2224/05564 , H01L2224/05567 , H01L2224/05647 , H01L2224/061 , H01L2224/274 , H01L2224/2741 , H01L2224/27444 , H01L2224/2745 , H01L2224/27452 , H01L2224/27464 , H01L2224/2781 , H01L2224/2784 , H01L2224/27845 , H01L2224/29023 , H01L2224/29028 , H01L2224/29187 , H01L2224/8301 , H01L2224/83011 , H01L2224/83012 , H01L2224/83013 , H01L2224/83026 , H01L2224/8312 , H01L2224/83121 , H01L2224/83203 , H01L2224/8383 , H01L2224/83907 , H01L2924/00014 , H01L2924/01029 , H01L2924/00012 , H01L2924/05442 , H01L2224/05552
摘要： A method for bonding of a first, at least partially metallic contact surface of a first substrate to a second, at least partially metallic contact surface of a second substrate, with the following steps, especially the following progression: application of a sacrificial layer which is at least partially, especially predominantly soluble in the material of at least one of the contact surfaces to at least one of the contact surfaces, bonding of the contact surfaces with at least partial solution of the sacrificial layer in at least one of the contact surfaces.
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公开(公告)号：US20150364441A1
公开(公告)日：2015-12-17
申请号：US14741181
申请日：2015-06-16
发明人： Damien Lambert
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/13 , H01L24/29 , H01L24/30 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L25/50 , H01L2224/0361 , H01L2224/04026 , H01L2224/05557 , H01L2224/05638 , H01L2224/1161 , H01L2224/13013 , H01L2224/13017 , H01L2224/13018 , H01L2224/13019 , H01L2224/13138 , H01L2224/136 , H01L2224/14131 , H01L2224/29017 , H01L2224/29082 , H01L2224/29109 , H01L2224/3003 , H01L2224/3012 , H01L2224/32145 , H01L2224/32147 , H01L2224/73204 , H01L2224/81191 , H01L2224/81903 , H01L2224/8301 , H01L2224/83012 , H01L2224/83048 , H01L2224/83139 , H01L2224/8314 , H01L2224/83191 , H01L2224/83385 , H01L2224/83815 , H01L2224/83902 , H01L2224/9211 , H01L2225/06513 , H01L2225/06555 , H01L2924/01014 , H01L2924/00014 , H01L2924/00012 , H01L2224/81 , H01L2224/83
摘要： Micro pillars are formed in silicon. The micro pillars are used in boding the silicon to hetero-material such as III-V material, ceramics, or metals. In bonding the silicon to the hetero-material, indium is used as a bonding material and attached to the hetero-material. The bonding material is heated and the silicon and the hetero-material are pressed together. As the silicon and the hetero-material are pressed together, the micro pillars puncture the bonding material. In some embodiments, pedestals are used in the silicon as hard stops to align the hetero-material with the silicon.
摘要翻译： 微柱形成在硅中。 微柱用于将硅掺入诸如III-V材料，陶瓷或金属的异质材料中。 在将硅键合到异质材料时，使用铟作为结合材料并附着到异质材料上。 加热接合材料，并将硅和异质材料压在一起。 当硅和异质材料被压在一起时，微柱刺穿接合材料。 在一些实施例中，在硅中使用基座作为硬止动器以使异质材料与硅对准。
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9.发明申请公开(公告)号：US20120115305A1
公开(公告)日：2012-05-10
申请号：US12943281
申请日：2010-11-10
申请人： Jung-Huei PENG , Hsin-Ting HUANG , Yao-Te HUANG , Shang-Ying TSAI , Ping-Yin LIU
发明人： Jung-Huei PENG , Hsin-Ting HUANG , Yao-Te HUANG , Shang-Ying TSAI , Ping-Yin LIU
IPC分类号： H01L21/302
CPC分类号： H01L25/0657 , B81C1/00269 , B81C2203/019 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L25/50 , H01L2224/2745 , H01L2224/27452 , H01L2224/2746 , H01L2224/2782 , H01L2224/2783 , H01L2224/27831 , H01L2224/2784 , H01L2224/27848 , H01L2224/29082 , H01L2224/29111 , H01L2224/29116 , H01L2224/29117 , H01L2224/29124 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/29611 , H01L2224/29617 , H01L2224/29644 , H01L2224/29647 , H01L2224/29655 , H01L2224/32058 , H01L2224/32059 , H01L2224/3207 , H01L2224/32148 , H01L2224/32505 , H01L2224/83011 , H01L2224/83012 , H01L2224/83014 , H01L2224/83121 , H01L2224/83193 , H01L2224/83203 , H01L2224/94 , H01L2924/01322 , H01L2924/10157 , H01L2924/1461 , H01L2924/00014 , H01L2924/01032 , H01L2924/01014 , H01L2924/01013 , H01L2224/83
摘要： A method for wafer to wafer bonding in semiconductor packaging provides for roughening the bonding surfaces in one embodiment. Also provided is a method for passivating the bonding surfaces with a lower melting point material that becomes forced away from the bonding interface during bonding. Also provided is a method for forming an eutectic at the bonding interface to reduce the impact of any native oxide formation at the bonding interface.
摘要翻译： 在一个实施例中，用于半导体封装中的晶片到晶片接合的方法提供了使结合表面粗糙化的方法。 还提供了一种用于在接合期间被迫离开接合界面的较低熔点材料钝化接合表面的方法。 还提供了在键合界面处形成共晶的方法，以减少接合界面处的任何自然氧化物形成的影响。
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