公开(公告)号：US08866161B2

公开(公告)日：2014-10-21

申请号：US13314186

申请日：2011-12-08

Applicant: Shih-Cheng Huang ,  Po-Min Tu ,  Ying-Chao Yeh ,  Wen-Yu Lin ,  Peng-Yi Wu ,  Shih-Hsiung Chan

Inventor： Shih-Cheng Huang ,  Po-Min Tu ,  Ying-Chao Yeh ,  Wen-Yu Lin ,  Peng-Yi Wu ,  Shih-Hsiung Chan

IPC: H01L29/06 ,  H01L27/15 ,  H01L21/02 ,  H01L33/00 ,  H01S5/323

CPC classification number: H01L21/0254 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02656 ,  H01L33/007 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

Abstract: A structure of semiconductor device includes a first semiconductor layer; an intermediate layer on a surface of said first semiconductor layer; a second semiconductor layer on said intermediate layer, wherein said intermediate layer and said second semiconductor layer are integrated to a set of sub-structures; and a semiconductor light emitting device on said second semiconductor layer.

Abstract translation: 半导体器件的结构包括第一半导体层; 在所述第一半导体层的表面上的中间层; 在所述中间层上的第二半导体层，其中所述中间层和所述第二半导体层被集成到一组子结构中; 以及在所述第二半导体层上的半导体发光器件。

公开(公告)号：US08754438B2

公开(公告)日：2014-06-17

申请号：US13400097

申请日：2012-02-19

Applicant: Ya-Wen Lin ,  Shih-Cheng Huang ,  Po-Min Tu ,  Chia-Hung Huang ,  Shun-Kuei Yang

Inventor： Ya-Wen Lin ,  Shih-Cheng Huang ,  Po-Min Tu ,  Chia-Hung Huang ,  Shun-Kuei Yang

IPC: H01L33/62

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/38 ,  H01L33/382

Abstract: An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

Abstract translation: LED包括衬底，缓冲层，外延层和导电层。 外延层包括第一N型外延层，第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。 第一和第二N型外延层经由图案化的沟槽彼此接触。 因此，LED具有均匀的电流分布和更大的发光面积。 还提供了一种用于LED的制造方法。

公开(公告)号：US08604503B2

公开(公告)日：2013-12-10

申请号：US13600137

申请日：2012-08-30

Applicant: Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Ya-Wen Lin ,  Shun-Kuei Yang

Inventor： Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Ya-Wen Lin ,  Shun-Kuei Yang

IPC: H01L33/22

CPC classification number: H01L33/58 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32

Abstract: A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.

Abstract translation: 发光二极管包括衬底，衬底上的过渡层和过渡层上的外延层。 过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。 球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。 在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

公开(公告)号：US08232122B2

公开(公告)日：2012-07-31

申请号：US13207439

申请日：2011-08-11

Applicant: Po-Min Tu ,  Shih-Cheng Huang

Inventor： Po-Min Tu ,  Shih-Cheng Huang

IPC: H01L21/00

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/0095 ,  Y10S438/945

Abstract: A method for fabricating an LED chip is provided. Firstly, a SiO2 pattern layer is formed on a top surface of a substrate. Then, lighting structures are grown on a portion of the top surface of substrate without the SiO2 pattern layer thereon. Thereafter, the SiO2 pattern layer is removed by wet etching to form spaces between bottoms of the lighting structures and substrate. An etching solution is used to permeate into the spaces and etch the lighting structures from the bottoms thereof, whereby the lighting structures each with a trapezoid shape is formed. Sidewalls of each of the lighting structures are inclined inwardly along a top-to-bottom direction.

Abstract translation: 提供一种制造LED芯片的方法。 首先，在基板的上表面上形成SiO 2图形层。 然后，在衬底的顶表面的一部分上生长照明结构，而不在其上形成SiO 2图案层。 此后，通过湿蚀刻去除SiO 2图案层，以在照明结构和基板的底部之间形成空间。 使用蚀刻溶液渗透到空间中并从其底部蚀刻照明结构，由此形成各自具有梯形形状的照明结构。 每个照明结构的侧壁沿着顶部到底部的方向向内倾斜。

公开(公告)号：US07989225B2

公开(公告)日：2011-08-02

申请号：US12693503

申请日：2010-01-26

Applicant: Shih-Cheng Huang

Inventor： Shih-Cheng Huang

IPC: H01L21/00

CPC classification number: H01L21/268 ,  H01L21/324 ,  H01L33/0079

Abstract: A method for detaching a first material layer from a second material layer includes following steps. Firstly, a high-magnetic-permeability material layer is formed on a first material layer. Secondly, a second material layer is formed on the high-magnetic-permeability material layer. Thirdly, the first and second material layers are cooled such that the first and second material layers shrink, wherein the first and second material layers are low-magnetic-permeability materials. Finally, the high-magnetic-permeability material layer is heated by applying a high-frequency radiofrequency electromagnetic wave thereto such that the high-magnetic-permeability material layer expands, thus detaching the first material layer from the second material layer.

Abstract translation: 从第二材料层分离第一材料层的方法包括以下步骤。 首先，在第一材料层上形成高磁导率材料层。 其次，在高磁导率材料层上形成第二材料层。 第三，第一和第二材料层被冷却使得第一和第二材料层收缩，其中第一和第二材料层是低磁导率材料。 最后，通过向其施加高频射频电磁波来加热高磁导率材料层，使得高磁导率材料层膨胀，从而将第一材料层从第二材料层分离。

公开(公告)号：US08536590B2

公开(公告)日：2013-09-17

申请号：US13113082

申请日：2011-05-23

Applicant: Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

Inventor： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

IPC: H01L29/18

CPC classification number: H01L25/0753 ,  H01L33/62 ,  H01L2224/16

Abstract: A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate.

Abstract translation: 发光元件封装包括衬底，至少两个发光元件模块和封装构件。 基板包括电路层。 电路层包括多个焊盘。 至少两个发光元件模块安装在基板上。 所述至少两个发光元件模块中的每一个包括多个发光元件。 所述至少两个发光元件模块的每个发光元件通过所述焊盘电连接到相邻的发光元件。 至少两个发光元件模块相反地布置。 封装构件被构造成将至少两个发光元件模块封装在基板上。

公开(公告)号：US08519419B2

公开(公告)日：2013-08-27

申请号：US13171472

申请日：2011-06-29

Applicant: Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

Inventor： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

IPC: H01L33/00

CPC classification number: H01L33/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/382 ,  H01L33/46

Abstract: A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

Abstract translation: 半导体发光结构包括硅衬底，分布式布拉格反射器，半导体结构层和外延连接层。 硅衬底具有顶表面。 分布式布拉格反射器形成在硅衬底的顶表面上。 半导体结构层被配置为发光。 外延连接层放置在分布式布拉格反射器和半导体结构层之间。 沟槽从半导体结构层延伸穿过外延连接层和分布式布拉格反射器到达半导体结构层。

公开(公告)号：US20130032779A1

公开(公告)日：2013-02-07

申请号：US13457431

申请日：2012-04-26

Applicant: Chia-Hung HUANG ,  Shih-Cheng Huang ,  Po-Min TU ,  Shun-Kuei YANG ,  Ya-Wen LIN

Inventor： Chia-Hung HUANG ,  Shih-Cheng Huang ,  Po-Min TU ,  Shun-Kuei YANG ,  Ya-Wen LIN

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/46

CPC classification number: H01L33/007 ,  H01L21/76856 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/22

Abstract: A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

Abstract translation: 发光二极管（LED）包括依次设置在基板上的基板，外延层和氮化铝（AlN）层。 AlN层包括彼此分离的多个叠层，其中外延层完全覆盖AlN层的多个叠层。 具有多个堆叠的AlN层通过LED的顶部平面反射向上反射由外延层产生的向上的光并且朝向衬底向下反射到LED的外部。 还公开了一种用于形成LED的方法。

公开(公告)号：US20110095313A1

公开(公告)日：2011-04-28

申请号：US12891731

申请日：2010-09-27

Applicant: Peng-Yi Wu ,  Shih-Cheng Huang ,  Po-Min Tu ,  Wen-Yu Lin ,  Tzu-Chien Hong

Inventor： Peng-Yi Wu ,  Shih-Cheng Huang ,  Po-Min Tu ,  Wen-Yu Lin ,  Tzu-Chien Hong

IPC: H01L33/30

CPC classification number: H01L33/007 ,  H01L33/44

Abstract: A method for manufacturing light-emitting diode (LED) first provides a substrate, then a protrusive patterned layer is formed on the substrate. The protrusive patterned layer exposes portions of the substrate, and the exposed portions are defined as a plurality of exposed regions. Next, a plurality of island semiconductor multi-layer is individually formed in each exposed region of the substrate.

Abstract translation: 一种制造发光二极管（LED）的方法首先提供一种衬底，然后在衬底上形成凸出的图案层。 突出图案层露出基板的部分，并且暴露部分被定义为多个暴露区域。 接下来，在基板的每个曝光区域中分别形成多个岛状半导体多层。

公开(公告)号：US20110045609A1

公开(公告)日：2011-02-24

申请号：US12693503

申请日：2010-01-26

Applicant: Shih-Cheng Huang

Inventor： Shih-Cheng Huang

IPC: H01L21/04

CPC classification number: H01L21/268 ,  H01L21/324 ,  H01L33/0079

Abstract: A method for detaching a first material layer from a second material layer includes following steps. Firstly, a high-magnetic-permeability material layer is formed on a first material layer. Secondly, a second material layer is formed on the high-magnetic-permeability material layer. Thirdly, the first and second material layers are cooled such that the first and second material layers shrink, wherein the first and second material layers are low-magnetic-permeability materials. Finally, the high-magnetic-permeability material layer is heated by applying a high-frequency radiofrequency electromagnetic wave thereto such that the high-magnetic-permeability material layer expands, thus detaching the first material layer from the second material layer.

Abstract translation: 从第二材料层分离第一材料层的方法包括以下步骤。 首先，在第一材料层上形成高磁导率材料层。 其次，在高磁导率材料层上形成第二材料层。 第三，第一和第二材料层被冷却使得第一和第二材料层收缩，其中第一和第二材料层是低磁导率材料。 最后，通过向其施加高频射频电磁波来加热高磁导率材料层，使得高磁导率材料层膨胀，从而将第一材料层从第二材料层分离。