公开(公告)号：US20060237848A1

公开(公告)日：2006-10-26

申请号：US11474469

申请日：2006-06-26

申请人： Shinji Suminoe ,  Hiroyuki Nakanishi ,  Toshiya Ishio ,  Yoshihide Iwazaki ,  Katsunobu Mori

发明人： Shinji Suminoe ,  Hiroyuki Nakanishi ,  Toshiya Ishio ,  Yoshihide Iwazaki ,  Katsunobu Mori

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05546 ,  H01L2224/05567 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2224/05552 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device, comprising the steps of forming an insulation layer, which has an opening section in an area including an area on an electrode pad, on a top surface of the semiconductor substrate on which the electrode pad is formed; at least forming a first barrier metal layer, which becomes a part of a leading wiring layer, in an inner peripheral surface of the opening section including the top surface of the electrode pad; at least forming a main conductor layer, which becomes a part of the leading wiring layer, in an area surrounded by the first barrier metal layer in the opening section; eliminating an upper portion of the main conductor layer at least to a position at which the first barrier metal layer is exposed, and forming a second barrier metal layer, which becomes a part of the leading wiring layer, so as to cover the whole top surface of the main conductor layer.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：在形成有电极焊盘的半导体衬底的顶表面上形成绝缘层，该绝缘层在包括电极焊盘的区域的区域中具有开口部分; 至少在包括所述电极焊盘的顶面的所述开口部的内周面中形成成为前导布线层的一部分的第一阻挡金属层; 至少在由开口部分中的第一阻挡金属层包围的区域中形成成为引导布线层的一部分的主导体层; 消除主导体层的上部至少到第一阻挡金属层露出的位置，形成作为引导布线层的一部分的第二阻挡金属层，以覆盖整个顶表面 的主导体层。

公开(公告)号：US20060071330A1

公开(公告)日：2006-04-06

申请号：US11240802

申请日：2005-10-03

申请人： Shinji Suminoe ,  Hiroyuki Nakanishi ,  Yoko Komeda

发明人： Shinji Suminoe ,  Hiroyuki Nakanishi ,  Yoko Komeda

IPC分类号： H01L23/34

CPC分类号： H01L23/49822 ,  H01L23/3114 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05026 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/16145 ,  H01L2224/16265 ,  H01L2924/14 ,  H01L2924/1532 ,  H01L2924/15321 ,  H01L2924/19041 ,  H01L2924/19104 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor package which is multifunctional, thin, and high in mounting reliability includes an insulating film; a first electronic component formed on one of the main surfaces of the insulating film; a second electronic component formed outwardly on the other of the main surfaces opposite to the one of the main surfaces; an external output terminal formed outwardly on the other of the main surfaces; and internal wiring formed in the insulating film so as to provide electrical continuity between the external output terminal and each of the first electronic component and the second electronic component. The insulating film is composed of a first insulating film and a second insulating film opposite to each other; the internal wiring is interposed between the first insulating film and the second insulating film, and the protruding end of the external output terminal is outside beyond the protruding end of the second electronic component.

摘要翻译： 多功能，薄型和高安装可靠性的半导体封装包括绝缘膜; 形成在绝缘膜的一个主表面上的第一电子部件; 在与所述一个主表面相对的另一个主表面上向外形成的第二电子部件; 在另一个主表面上向外形成的外部输出端子; 以及形成在所述绝缘膜中的内部布线，以便在所述外部输出端子与所述第一电子部件和所述第二电子部件中的每一个之间提供电连续性。 绝缘膜由相互相对的第一绝缘膜和第二绝缘膜构成; 内部布线插入在第一绝缘膜和第二绝缘膜之间，并且外部输出端子的突出端超出第二电子部件的突出端。

公开(公告)号：US06838748B2

公开(公告)日：2005-01-04

申请号：US10434205

申请日：2003-05-09

申请人： Toshiya Ishio ,  Hiroyuki Nakanishi ,  Katsunobu Mori ,  Yoshihide Iwazaki ,  Shinji Suminoe

发明人： Toshiya Ishio ,  Hiroyuki Nakanishi ,  Katsunobu Mori ,  Yoshihide Iwazaki ,  Shinji Suminoe

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/552 ,  H01L29/06

CPC分类号： H01L23/552 ,  H01L23/3114 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/0657 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor chip of the present invention is so arranged that a front face on which an element circuit is formed has electrode pads and a side face and a back face are coated with a shielding layer for shielding electromagnetic waves. With this, it is possible to provide a semiconductor element capable of being easily manufactured into a smaller semiconductor device compared with a conventional semiconductor device equipped with a shielding cap; a semiconductor device; and a method for manufacturing a semiconductor element.

摘要翻译： 本发明的半导体芯片被布置成使得其上形成有元件电路的正面具有电极焊盘，并且侧面和背面涂覆有用于屏蔽电磁波的屏蔽层。 由此，与配备有屏蔽盖的现有的半导体装置相比，可以提供能够容易地制造成较小的半导体装置的半导体元件; 半导体器件; 以及半导体元件的制造方法。

公开(公告)号：US07445958B2

公开(公告)日：2008-11-04

申请号：US11474469

申请日：2006-06-26

申请人： Shinji Suminoe ,  Hiroyuki Nakanishi ,  Toshiya Ishio ,  Yoshihide Iwazaki ,  Katsunobu Mori

发明人： Shinji Suminoe ,  Hiroyuki Nakanishi ,  Toshiya Ishio ,  Yoshihide Iwazaki ,  Katsunobu Mori

IPC分类号： H01L21/44

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05546 ,  H01L2224/05567 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2224/05552 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device, comprising the steps of forming an insulation layer, which has an opening section in an area including an area on an electrode pad, on a top surface of the semiconductor substrate on which the electrode pad is formed; at least forming a first barrier metal layer, which becomes a part of a leading wiring layer, in an inner peripheral surface of the opening section including the top surface of the electrode pad; at least forming a main conductor layer, which becomes a part of the leading wiring layer, in an area surrounded by the first barrier metal layer in the opening section; eliminating an upper portion of the main conductor layer at least to a position at which the first barrier metal layer is exposed, and forming a second barrier metal layer, which becomes a part of the leading wiring layer, so as to cover the whole top surface of the main conductor layer.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：在形成有电极焊盘的半导体衬底的顶表面上形成绝缘层，该绝缘层在包括电极焊盘的区域的区域中具有开口部分; 至少在包括所述电极焊盘的顶面的所述开口部的内周面中形成成为前导布线层的一部分的第一阻挡金属层; 至少在由开口部分中的第一阻挡金属层包围的区域中形成成为引导布线层的一部分的主导体层; 消除主导体层的上部至少到第一阻挡金属层露出的位置，形成作为引导布线层的一部分的第二阻挡金属层，以覆盖整个顶表面 的主导体层。

公开(公告)号：US20060226545A1

公开(公告)日：2006-10-12

申请号：US11384549

申请日：2006-03-21

申请人： Shinji Suminoe ,  Hiroyuki Nakanishi

发明人： Shinji Suminoe ,  Hiroyuki Nakanishi

IPC分类号： H01L23/48

CPC分类号： H01L23/3114 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/14131 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/30107

摘要： A semiconductor device includes: a semiconductor substrate having a semiconductor element; an electrode pad electrically connected to the semiconductor element; an insulating layer formed on the substrate, the insulating layer having an opening extended to the electrode pad; a wiring portion electrically connected to the electrode pad via the opening, the wiring portion having an edge located on the insulating layer; and a conductive bump formed directly above the electrode pad so as to cover upper and side surfaces of the wiring portion.

摘要翻译： 半导体器件包括：具有半导体元件的半导体衬底; 与半导体元件电连接的电极焊盘; 形成在所述基板上的绝缘层，所述绝缘层具有延伸到所述电极焊盘的开口; 经由所述开口电连接到所述电极焊盘的布线部分，所述布线部分具有位于所述绝缘层上的边缘; 以及直接在电极焊盘上方形成的导电凸块，以覆盖布线部分的上表面和侧表面。

公开(公告)号：US07091616B2

公开(公告)日：2006-08-15

申请号：US10163492

申请日：2002-06-07

申请人： Shinji Suminoe ,  Hiroyuki Nakanishi ,  Toshiya Ishio ,  Yoshihide Iwazaki ,  Katsunobu Mori

发明人： Shinji Suminoe ,  Hiroyuki Nakanishi ,  Toshiya Ishio ,  Yoshihide Iwazaki ,  Katsunobu Mori

IPC分类号： H01L23/48

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05546 ,  H01L2224/05567 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13099 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2224/05552 ,  H01L2924/00

摘要： A leading wiring layer is provided with a main conductor layer, a first barrier metal layer for covering bottom and side surfaces of the main conductor layer, and a second barrier metal layer for covering a top surface of the main conductor layer. This ensures the respective barrier metal layers to cover entire surroundings including the side, bottom and top surfaces of the main conductor layer.

摘要翻译： 引导布线层设置有主导体层，用于覆盖主导体层的底部和侧表面的第一阻挡金属层和用于覆盖主导体层的顶表面的第二阻挡金属层。 这确保相应的阻挡金属层覆盖包括主导体层的侧面，底部和顶部表面的整个环境。

公开(公告)号：US06831002B2

公开(公告)日：2004-12-14

申请号：US10242422

申请日：2002-09-13

申请人： Yoshihide Iwazaki ,  Shinji Suminoe ,  Hiroyuki Nakanishi ,  Toshiya Ishio ,  Takamasa Tanaka ,  Katsunobu Mori

发明人： Yoshihide Iwazaki ,  Shinji Suminoe ,  Hiroyuki Nakanishi ,  Toshiya Ishio ,  Takamasa Tanaka ,  Katsunobu Mori

IPC分类号： H01L244763

CPC分类号： H01L21/76882 ,  H01L21/2885 ,  H01L21/76898

摘要： A manufacturing method of a semiconductor device for providing wires on a front surface of a semiconductor wafer by providing a plating layer, in which conductive layers provided on the front and back surfaces of the semiconductor wafer are electrically conducted by solder filled in its through-holes, and electrolytic plating is carried out by electrically connecting cathode terminals of an electrolytic plating apparatus and the conductive layer provided on the back surface of the semiconductor wafer which is provided with a mask on the conductive layer provided on its front surface.

摘要翻译： 一种半导体器件的制造方法，其通过提供镀层，在半导体晶片的前表面上提供导线，其中设置在半导体晶片的前表面和后表面上的导电层通过填充在其通孔中的焊料电导电 并且通过将电解电镀装置的阴极端子与设置在其前表面上的导电层上设置有掩模的半导体晶片的背面上的导电层电连接进行电解电镀。

公开(公告)号：US06396157B2

公开(公告)日：2002-05-28

申请号：US09752682

申请日：2001-01-03

申请人： Hiroyuki Nakanishi ,  Katsunobu Mori ,  Toshiya Ishio ,  Shinji Suminoe

发明人： Hiroyuki Nakanishi ,  Katsunobu Mori ,  Toshiya Ishio ,  Shinji Suminoe

IPC分类号： H01L2348

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05548 ,  H01L2224/05569 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/0001 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14

摘要： A semiconductor integrated circuit device in accordance with the present invention is provided with first electrode pads, a first insulation layer and a second insulation layer. The first electrode pad are formed on the circuit formation face side of an IC chip. The first insulation layer is placed on areas other than the upper portions of the first electrode pads. The second insulation layer, which is made from a photosensitive material, is formed on the first insulation layer with an opening section for allowing at least one portion of the first electrode, the wire and at least one portion of the second electrode to be exposed. Here, the wire and the second electrode are formed by filling the opening section of the second insulation layer with particles of a conductive material. Thus, it is possible to provide a semiconductor integrated circuit device to which a fine wire processing technique is applied while maintaining the same functions as conventional devices at low costs, and a manufacturing method for such a device.

摘要翻译： 根据本发明的半导体集成电路器件设置有第一电极焊盘，第一绝缘层和第二绝缘层。 第一电极焊盘形成在IC芯片的电路形成面侧。 第一绝缘层放置在除第一电极焊盘的上部之外的区域上。 由感光材料制成的第二绝缘层在第一绝缘层上形成有用于允许第一电极，电线和至少一部分第二电极的至少一部分露出的开口部分。 这里，通过用导电材料的颗粒填充第二绝缘层的开口部分来形成电线和第二电极。 因此，可以提供一种半导体集成电路器件，在保持与传统器件相同功能的低成本的条件下应用细线加工技术，以及这种器件的制造方法。

公开(公告)号：US20060022320A1

公开(公告)日：2006-02-02

申请号：US11188785

申请日：2005-07-26

申请人： Hiroyuki Nakanishi ,  Shinji Suminoe

发明人： Hiroyuki Nakanishi ,  Shinji Suminoe

IPC分类号： H01R13/15 ,  H01L23/02

CPC分类号： H01L24/10 ,  H01L23/3114 ,  H01L24/13 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05548 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/19104 ,  H05K1/0231 ,  H05K3/3436 ,  H05K3/3463 ,  H05K2201/0379 ,  H05K2201/09745 ,  H05K2201/10977 ,  H05K2201/10992 ,  H05K2203/041 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/05099

摘要： A semiconductor apparatus includes: a first insulating layer formed on an IC chip; a metal wiring having one end connected to a chip electrode pad, and one other end on which an external connection terminal mounting electrode is provided; an electronic component connected to part of the external connection terminal mounting electrode; an external connection terminal, which is made of a conductive material, formed on one other part of the external connection terminal mounting electrode; a second insulating layer covering, at least, (a) part of the external connection terminal mounting electrode to which the electronic component is not mounted, and (b) the metal wiring; and a sealing resin for sealing the electronic component and the external connection terminal in such a manner that the external connection terminal is partially exposed so as to have an exposed portion.

摘要翻译： 半导体装置包括：形成在IC芯片上的第一绝缘层; 金属配线，其一端连接到芯片电极焊盘，另一端设置有外部连接端子安装电极; 连接到所述外部连接端子安装电极的一部分的电子部件; 在外部连接端子安装电极的另一个部分上形成由导电材料制成的外部连接端子; 覆盖至少（a）部分未安装电子部件的外部连接端子安装电极的第二绝缘层和（b）金属布线; 以及用于密封电子部件和外部连接端子的密封树脂，使得外部连接端子部分地露出以具有暴露部分。

公开(公告)号：US20050104165A1

公开(公告)日：2005-05-19

申请号：US11023389

申请日：2004-12-29

申请人： Toshiya Ishio ,  Hiroyuki Nakanishi ,  Katsunobu Mori ,  Yoshihide Iwazaki ,  Shinji Suminoe

发明人： Toshiya Ishio ,  Hiroyuki Nakanishi ,  Katsunobu Mori ,  Yoshihide Iwazaki ,  Shinji Suminoe

IPC分类号： H01L23/00 ,  H01L23/31 ,  H01L23/552 ,  H01L29/06 ,  H01L21/302

CPC分类号： H01L23/552 ,  H01L23/3114 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/0657 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor chip of the present invention is so arranged that a front face on which an element circuit is formed has electrode pads and a side face and a back face are coated with a shielding layer for shielding electromagnetic waves. With this, it is possible to provide a semiconductor element capable of being easily manufactured into a smaller semiconductor device compared with a conventional semiconductor device equipped with a shielding cap; a semiconductor device; and a method for manufacturing a semiconductor element.

摘要翻译： 本发明的半导体芯片被布置成使得其上形成有元件电路的正面具有电极焊盘，并且侧面和背面涂覆有用于屏蔽电磁波的屏蔽层。 由此，与配备有屏蔽盖的现有的半导体装置相比，可以提供能够容易地制造成较小的半导体装置的半导体元件; 半导体器件; 以及半导体元件的制造方法。