摘要:
An object of the present invention is to allow stress that may be applied to a semiconductor package to be suppressed, when the semiconductor package is mounted on a curved board. In a mount board 1, a semiconductor package 20 is mounted on a curved board 10 including a curved surface on at least a portion thereof. The curved board 10 includes a pedestal portion 13a disposed on a region of the curved surface portion where the semiconductor package 20 is mounted and having an upper surface thereof formed flat, and a plurality of pad portions 15a disposed on the flat surface of the pedestal portion 13a. The pedestal portion 13a is formed of an insulating material. The semiconductor package 20 is mounted on the pad portions 15a.
摘要:
An object of the present invention is to allow stress that may be applied to a semiconductor package to be suppressed, when the semiconductor package is mounted on a curved board. In a mount board 1, a semiconductor package 20 is mounted on a curved board 10 including a curved surface on at least a portion thereof. The curved board 10 includes a pedestal portion 13a disposed on a region of the curved surface portion where the semiconductor package 20 is mounted and having an upper surface thereof formed flat, and a plurality of pad portions 15a disposed on the flat surface of the pedestal portion 13a. The pedestal portion 13a is formed of an insulating material. The semiconductor package 20 is mounted on the pad portions 15a.
摘要:
An object of the present invention is to allow stress that may be applied to a semiconductor package to be suppressed, when the semiconductor package is mounted on a curved board. In a mount board 1, a semiconductor package 20 is mounted on a curved board 10 including a curved surface on at least a portion thereof. The curved board 10 includes a pedestal portion 13a disposed on a region of the curved surface portion where the semiconductor package 20 is mounted and having an upper surface thereof formed flat, and a plurality of pad portions 15a disposed on the flat surface of the pedestal portion 13a. The pedestal portion 13a is formed of an insulating material. The semiconductor package 20 is mounted on the pad portions 15a.
摘要:
Stress concentration at the connecting portion of the electronic component and the curved board and the area around the connecting portion is suppressed. In a flexible wiring board, insulation layers (11, 13) and wiring layers (12, 15) are piled up alternately and wiring layers (12, 15) are via-connected each other. The board comprises reinforced area (10a) reinforced against external stress, bending area (10c) bending easier than the reinforced area (10a) by external stress, and a stress relaxation area (10b) provided in area between the reinforced area (10a) and the bending area (10c), bending easier than the reinforced area (10a) but not easier than the bending area (10c) by the external stress, and relaxing the stress carried from the bending area (10c) to the reinforced area (10a).
摘要:
To restrain the stress concentration at the connecting portion of the electronic component and the curved board and the area around the connecting portion even when the electronic component is mounted on the curved board. A flexible wiring board in which a plurality of insulation layers (11, 13) and wiring layers (12, 15) are piled up alternately and the wiring layers (12, 15) are connected each other by a via conductor (14), and the board comprises a reinforced area (10a) being reinforced against an external stress, a bending area (10c) bending easier than the reinforced area (10a) by the external stress, and a stress relaxation area (10b) being provided in an area between the reinforced area (10a) and the bending area (10c), bending easier than the reinforced area (10a) by the external stress and not easier than the bending area (10c) by the external stress, and relaxing the stress carried from the bending area (10c) to the reinforced area (10a). The electronic component (20) is connected electrically and mechanically via solder balls (30) with a pad portion (15a) arranged inside an area surrounded by an outer circumferential boundary line of the reinforced area (10a).
摘要:
A liquid crystal display substrate has a data driver circuit and a gate driver circuit for driving the liquid crystal display integrated thereon together with a common drive circuit, where common voltages VCOMH and VCOML are applied from the outside through a pad. The gate driver circuit is placed to be adjacent to one of the four terminals of the liquid crystal display. The common drive circuit is placed to be adjacent to the terminal opposite to where the gate driver circuit is placed and as close to the pad as possible while having almost the same width as the area of the gate driver circuit. The pad close to where the common drive circuit is placed is used as the pad for applying the common voltages VCOMH and VCOML.
摘要:
[Problems] To provide a novel compound which has a high carrier mobility and is useful as a charge-transporting agent that is not only capable of stably forming a photosensitive layer without precipitating crystals or forming pinholes at the time of forming the photosensitive layer but is also capable of forming an organic photosensitive material for electrophotography that has a high sensitivity and a low residual potential.[Means for Solution] A diphenylnaphthylamine derivative represented by the following general formula (1), wherein R1 to R3 are alkyl groups, k is an integer of 0 to 3, j is an integer of 0 to 4, l is an integer of 0 to 6, and X1 and X2 are hydrocarbon groups having at least one ethylenically unsaturated bond.
摘要:
In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.
摘要:
A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.
摘要:
An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.