摘要:
In a front end that has a filter circuit and is used for a communication system having an asymmetric communication channel in which upstream and downstream data rates are different, a filter circuit for received signals, which is for filtering received signals, and a filter circuit for transmitted signals, which is for filtering transmitted signals, are provided. The filter circuit for received signals has an amplifier block including a plurality of amplifiers, a capacitor block including a plurality of capacitors and being connected to the plurality of amplifiers included in the amplifier block, and a first and a second resistor blocks each including a plurality of resistors. Either one of the first or the second resistor block is selectively switched so as to be connected to the amplifier block by a resistor block-switching circuit. The circuit scale is reduced since only one amplifier block and one capacitor block are commonly used for two kinds of filter circuits.
摘要:
Provided is a method for producing a negative electrode for an electric storage device, the method comprising the steps of: preparing a negative electrode composition comprising a negative electrode active material that reversibly carries a sodium ion, metal sodium, and a liquid dispersion medium for dispersing them; allowing a negative electrode current collector to hold the negative electrode composition; evaporating at least part of the liquid dispersion medium from the negative electrode composition held by the negative electrode current collector, thereby giving a negative electrode precursor comprising the negative electrode active material, the metal sodium, and the negative electrode current collector; and bringing the negative electrode precursor into contact with an electrolyte having sodium ion conductivity, thereby doping the negative electrode active material with sodium eluted from the metal sodium.
摘要:
In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.
摘要:
An image processing circuit includes a first memory, a second memory, a write unit and a read unit. The first and second memories alternately store sub pixels of an input image including a plurality of parallax images corresponding to different view point directions. The write unit writes the sub pixels to one of the first and second memories. The read unit reads the sub pixels as an output image from the other of the first and second memories. Each of the first and second memories stores sub pixels for a plurality of successive lines. While the write unit writes the sub pixels of the input image to one of the first and second memories, the read unit reads the sub pixels of the output image from the other of the first and second memories. The first and the second memories are alternately changed.
摘要:
By using a selector, an output of a delta sigma modulator having a quantizer for quantizing a signal is selectively supplied to one of a first D/A converter having a linear amplifier and a second D/A converter having a digital amplifier. Further, the number of quantization levels of the quantizer, the sampling frequency, or the order of a transfer function of the delta sigma modulator is selected by a control signal selector in conjunction with the selector. An output of the first D/A converter is supplied to a line terminal, while an output of the second D/A converter is supplied to a headphone terminal.
摘要:
A semiconductor device include a plurality of active element cells including first element regions of a first conductivity type and second element regions of a second conductivity type, the second element regions disposed between the first element regions; and isolation regions disposed between the active element cells so as to isolate the active element cells from each other, the isolation regions being filled with a plurality of semi-insulating particles including granular insulators covered by semiconductor films.
摘要:
Even in the case that at least one braking force generating function fails, it is possible to secure a maximum braking force as well as suppressing a yaw moment generated on the basis of the failure as much as possible even at a time when whatever braking force is requested, A target braking force to a normal brake apparatus is calculated on the basis of a result of detection by a malfunction detecting portion, in such a manner that a total of braking forces generated in the brake apparatuses in respective wheels becomes as equal as possible to a requested braking force, at a time when a malfunction is generated in the brake apparatus or a braking force control portion.
摘要:
A cascade-type variable-order delta-sigma modulator with low power consumption that can change the number of stages of the quantization loops, which are connected in a cascade configuration, to an optimum number depending on peripheral circuitries in a configuration as simple as possible. The present invention includes first to nth stages of delta-sigma modulating type quantization loops (n is an integer equal to or more than 2) connected in a cascade configuration, and a noise rejecting circuit. Each quantization loop quantizes an input signal, outputs the quantization result, and feeds back the quantization result to itself. The noise rejecting circuit rejects a quantization noise of the first stage of quantization loop, and comprises (n−1) selectors for activating and de-activating the respective output signals of the second and succeeding stages of the quantization loops in compliance with the control signal.
摘要:
It is aimed at providing a vaporization apparatus and a vaporization method capable of keeping track of a progressive condition of clogging of the apparatus. It is also aimed at providing a vaporization apparatus and a vaporization method capable of eliminating clogging prior to occurrence of complete clogging, without disassembling the apparatus. It provides a vaporization apparatus for introducing a carrier gas from one end of a gas passage and for feeding, the carrier gas including a material solution, from the other end of the gas passage to a vaporization part to thereby vaporize the material solution, characterized in that a mass flow controller (MFC) is provided at the one end of the gas passage, and means for detecting a pressure within the gas passage is provided. The vaporization apparatus is characterized in that the same is provided with means for introducing a chemical solution capable of dissolving therein matters deposited or sticked to the inside of the gas passage, into the gas passage.
摘要:
The present application provides a semiconductor device including a first-conductivity type semiconductor substrate, a pillar structure portion formed on the first-conductivity type semiconductor substrate and formed of five semiconductor pillar layers arranged in one direction parallel to a main surface of the first-conductivity type semiconductor substrate, and isolation insulating portions formed on the first-conductivity type semiconductor substrate and sandwiching the pillar structure portion between the isolation insulating portions, wherein the pillar structure portion is formed of a first first-conductivity type pillar layer, a second first-conductivity type pillar layer and a third first-conductivity type pillar layer which sandwich the first first-conductivity type pillar layer, a first second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the second first-conductivity type pillar layer, and a second second-conductivity type pillar layer provided between the first first-conductivity type pillar layer and the third first-conductivity type pillar layer.