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    WAFER LEVEL LENS ARRAYS FOR IMAGE SENSOR PACKAGES AND THE LIKE, IMAGE SENSOR PACKAGES, AND RELATED METHODS
    1.
    发明申请
    WAFER LEVEL LENS ARRAYS FOR IMAGE SENSOR PACKAGES AND THE LIKE, IMAGE SENSOR PACKAGES, AND RELATED METHODS 审中-公开
    图像传感器包装的像素水平镜头阵列和类似的图像传感器包以及相关方法

    公开(公告)号：US20080290435A1

    公开(公告)日：2008-11-27

    申请号：US11751206

    申请日：2007-05-21

    申请人： Steve Oliver ,  Kyle K. Kirby ,  Warren M. Farnworth ,  William M. Hiatt ,  Salman Akram

    发明人： Steve Oliver ,  Kyle K. Kirby ,  Warren M. Farnworth ,  William M. Hiatt ,  Salman Akram

    IPC分类号： H01L31/0232 ,  B29D11/00 ,  H01L21/00

    CPC分类号： B29D11/00375 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14685 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Image sensor packages, lenses therefore, and methods for fabrication are disclosed. A substrate having through-hole vias may be provided, and an array of lenses may be formed in the vias. The lenses may be formed by molding or by tenting material over the vias. An array of lenses may provide a color filter array (CFA). Filters of the CFA may be formed in the vias, and lenses may be formed in or over the vias on either side of the filters. A substrate may include an array of microlenses, and each microlens of the array may correspond to a pixel of an associated image sensor. In other embodiments, each lens of the array may correspond to an imager array of an image sensor. A wafer having an array of lenses may be aligned with and attached to an imager wafer comprising a plurality of image sensor dice, then singulated to form a plurality of image sensor packages.

    摘要翻译： 公开了图像传感器封装，透镜以及制造方法。 可以提供具有通孔过孔的衬底，并且可以在通孔中形成透镜阵列。 透镜可以通过模制或通过在通孔上的材料的凸起来形成。 透镜阵列可以提供滤色器阵列（CFA）。 可以在过孔中形成CFA的过滤器，并且透镜可以形成在过滤器两侧的通孔中或上方。 衬底可以包括微透镜阵列，并且阵列的每个微透镜可以对应于相关联的图像传感器的像素。 在其他实施例中，阵列的每个透镜可以对应于图像传感器的成像器阵列。 具有透镜阵列的晶片可以与包括多个图像传感器芯片的成像器晶片对准并且附接到成像器晶片，然后被单个化以形成多个图像传感器封装。

    Imagers with contact plugs extending through the substrates thereof and imager fabrication methods
    5.
    发明授权
    Imagers with contact plugs extending through the substrates thereof and imager fabrication methods 有权
    具有延伸穿过基板的接触插塞和成像器制造方法的成像器

    公开(公告)号：US08017982B2

    公开(公告)日：2011-09-13

    申请号：US11761904

    申请日：2007-06-12

    申请人： Kyle K. Kirby ,  Steve Oliver

    发明人： Kyle K. Kirby ,  Steve Oliver

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14636 ,  H01L21/76898 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643

    摘要： Methods for fabricating photoimagers, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating image sensing elements, transistors, and other low-elevation features on an active surface of a fabrication substrate, and fabricating contact plugs, conductive lines, external contacts, and other higher-elevation features on the back side of the fabrication substrate. Imagers with image sensing elements and transistors on the active surface and contact plugs that extend through the substrate are also disclosed, as are electronic devices including such imagers.

    摘要翻译： 用于制造诸如互补金属氧化物半导体（CMOS）成像器的光电效应器的方法包括在制造衬底的有源表面上制造图像感测元件，晶体管和其它低仰角特征，以及制造接触插头，导线，外部 接触和其他较高高度的特征。 还公开了在活性表面上具有图像感测元件和晶体管的成像器以及延伸穿过衬底的接触插塞，以及包括这种成像器的电子设备也是公开的。

    SEMICONDUCTOR DEVICE FABRICATION METHODS
    6.
    发明申请
    SEMICONDUCTOR DEVICE FABRICATION METHODS 有权
    半导体器件制造方法

    公开(公告)号：US20110287572A1

    公开(公告)日：2011-11-24

    申请号：US13198533

    申请日：2011-08-04

    申请人： Kyle K. Kirby ,  Steve Oliver

    发明人： Kyle K. Kirby ,  Steve Oliver

    IPC分类号： H01L31/18 ,  H01L21/02

    CPC分类号： H01L27/14636 ,  H01L21/76898 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643

    摘要： Methods for fabricating semiconductor devices, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating transistors and other low-elevation features on an active surface of a fabrication substrate, and fabricating contact plugs, conductive lines, external contacts, and other higher-elevation features on the back side of the fabrication substrate. Semiconductor devices with transistors on the active surface and contact plugs that extend through the substrate are also disclosed, as are electronic devices including such semiconductor devices.

    摘要翻译： 用于制造诸如互补金属氧化物半导体（CMOS）成像器的半导体器件的方法包括在制造衬底的有源表面上制造晶体管和其它低仰角特征，以及制造接触插塞，导线，外部触点等 在制造基板的背面上的较高高度特征。 还公开了在有源表面上具有晶体管的半导体器件和延伸穿过衬底的接触插塞，以及包括这种半导体器件的电子器件也是公开的。

    Semiconductor substrates comprising through substrate interconnects that are visible on the substrate backside
    7.
    发明授权
    Semiconductor substrates comprising through substrate interconnects that are visible on the substrate backside 有权
    包括在衬底背面可见的通过衬底互连的半导体衬底

    公开(公告)号：US08531046B2

    公开(公告)日：2013-09-10

    申请号：US13099672

    申请日：2011-05-03

    申请人： Dave Pratt ,  Kyle K. Kirby ,  Steve Oliver ,  Mark Hiatt

    发明人： Dave Pratt ,  Kyle K. Kirby ,  Steve Oliver ,  Mark Hiatt

    IPC分类号： H01L23/544

    CPC分类号： H01L21/682 ,  H01L21/67259 ,  H01L21/76898 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

    摘要： The invention includes methods of determining x-y spatial orientation of a semiconductor substrate comprising an integrated circuit, methods of positioning a semiconductor substrate comprising an integrated circuit, methods of processing a semiconductor substrate, and semiconductor devices. In one implementation, a method of determining x-y spatial orientation of a semiconductor substrate comprising an integrated circuit includes providing a semiconductor substrate comprising at least one integrated circuit die. The semiconductor substrate comprises a circuit side, a backside, and a plurality of conductive vias extending from the circuit side to the backside. The plurality of conductive vias on the semiconductor substrate backside is examined to determine location of portions of at least two of the plurality of conductive vias on the semiconductor substrate backside. From the determined location, x-y spatial orientation of the semiconductor substrate is determined. Other aspects and implementations are contemplated.

    摘要翻译： 本发明包括确定包括集成电路的半导体衬底的x-y空间取向的方法，包括集成电路的半导体衬底的定位方法，半导体衬底的处理方法以及半导体器件。 在一个实现中，确定包括集成电路的半导体衬底的x-y空间取向的方法包括提供包括至少一个集成电路管芯的半导体衬底。 半导体衬底包括电路侧，背面以及从电路侧延伸到背面的多个导电通路。 检查半导体衬底背面上的多个导电通孔以确定半导体衬底背面上的多个导电通孔中的至少两个的部分的位置。 从确定的位置确定半导体衬底的x-y空间取向。 考虑了其他方面和实现。

    IMAGERS WITH CONTACT PLUGS EXTENDING THROUGH THE SUBSTRATES THEREOF AND IMAGER FABRICATION METHODS
    8.
    发明申请
    IMAGERS WITH CONTACT PLUGS EXTENDING THROUGH THE SUBSTRATES THEREOF AND IMAGER FABRICATION METHODS 有权
    具有通过其基板延伸的接触片的成像器和图像制造方法

    公开(公告)号：US20080308893A1

    公开(公告)日：2008-12-18

    申请号：US11761904

    申请日：2007-06-12

    申请人： Kyle K. Kirby ,  Steve Oliver

    发明人： Kyle K. Kirby ,  Steve Oliver

    IPC分类号： H01L31/02 ,  H01L31/18

    CPC分类号： H01L27/14636 ,  H01L21/76898 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643

    摘要： Methods for fabricating photoimagers, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating image sensing elements, transistors, and other low-elevation features on an active surface of a fabrication substrate, and fabricating contact plugs, conductive lines, external contacts, and other higher-elevation features on the back side of the fabrication substrate. Imagers with image sensing elements and transistors on the active surface and contact plugs that extend through the substrate are also disclosed, as are electronic devices including such imagers.

    摘要翻译： 用于制造诸如互补金属氧化物半导体（CMOS）成像器的光电效应器的方法包括在制造衬底的有源表面上制造图像感测元件，晶体管和其它低仰角特征，以及制造接触插头，导线，外部 接触和其他较高高度的特征。 还公开了在活性表面上具有图像感测元件和晶体管的成像器以及延伸穿过衬底的接触插塞，以及包括这种成像器的电子设备也是公开的。

    Semiconductor device fabrication methods
    9.
    发明授权
    Semiconductor device fabrication methods 有权
    半导体器件制造方法

    公开(公告)号：US08679933B2

    公开(公告)日：2014-03-25

    申请号：US13198533

    申请日：2011-08-04

    申请人： Kyle K. Kirby ,  Steve Oliver

    发明人： Kyle K. Kirby ,  Steve Oliver

    IPC分类号： H01L21/20

    CPC分类号： H01L27/14636 ,  H01L21/76898 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14643

    摘要： Methods for fabricating semiconductor devices, such as complementary metal-oxide-semiconductor (CMOS) imagers, include fabricating transistors and other low-elevation features on an active surface of a fabrication substrate, and fabricating contact plugs, conductive lines, external contacts, and other higher-elevation features on the back side of the fabrication substrate. Semiconductor devices with transistors on the active surface and contact plugs that extend through the substrate are also disclosed, as are electronic devices including such semiconductor devices.

    摘要翻译： 用于制造诸如互补金属氧化物半导体（CMOS）成像器的半导体器件的方法包括在制造衬底的有源表面上制造晶体管和其它低仰角特征，以及制造接触插塞，导线，外部触点等 在制造基板的背面上的较高高度特征。 还公开了在有源表面上具有晶体管的半导体器件和延伸穿过衬底的接触插塞，以及包括这种半导体器件的电子器件也是公开的。