摘要:
A packaging process providing a die with C4 solder bumps and a polymer substrate first. It then jets the melted second solder onto each of the C4 solder bumps forming a second solder bump. After reflowing and leveling the solder bumps, the die is flipped and combined with the substrate. Then heat treatment proceeds with the combination of the die and the substrate forming a flip chip package with collapse-controlled solder bump on the polymer substrate.
摘要:
A flip-chip semiconductor device and a method for under filling the flip-chip semiconductor device are disclosed. The flip-chip semiconductor device is provided with a substrate and a die having a plurality of solder bumps for connecting to the substrate. Encapsulation material is under filled between the die and the substrate. The substrate has a non-mask area defied in a center portion thereof while the remaining surface area is covered by a solder mask. The non-mask area defines a hole in the center thereof so that the encapsulation material can be dispensed along all sides of the die to flow toward the non-mask area and stop when reaching the non-mask area whereby the encapsulation material does not block the hole and air between said die and the substrate is limited in a void formed around the hole and communicated with the atmosphere via the hole.
摘要:
A solder paste for fabricating bumps includes a flux and metallic alloy powder. The metallic alloy powder includes a plurality of low eutectic metallic alloy granules, and the size of these metallic alloy granules is 20-60 &mgr;m and the average size of the metallic granules is 35 &mgr;m to 45 &mgr;m.
摘要:
The present invention provides a bump fabrication process. After forming an under bump metallurgy (UBM) layer and bumps in sequence over the substrate, the under bump metallurgy layer that is not covered by the bumps is etched with an etchant. The etchant mainly comprises sulfuric acid and de-ionized water. The etchant can etch the nickel-vanadium layer of the UBM layer without damaging the bumps.
摘要:
A semiconductor device with a capability can prevent a burnt fuse pad from re-electrical connection, wherein the semiconductor device includes a bump pad and a fuse pad over a wafer. The fuse pad includes the burnt fuse pad having a gap for electrical isolation. The semiconductor device comprises a dielectric layer, disposed substantially above the burnt fuse pad and filling the gap, and a bump structure, disposed on the bump pad. The foregoing semiconductor device can further comprise a passivation layer, which exposes the bump pad and a portion of the burnt fuse pad. Wherein, the dielectric layer is over the passivation layer, covers the exposed portion of the burnt fuse pad and fills the gap.
摘要:
A wafer bump fabrication process is provided in the present invention. A wafer with multiple bonding pads and a passivation layer, which exposes the bonding pads, is provided. The surface of each bonding pad has an under bump metallurgy layer. A patterned photoresist layer with a plurality of opening is formed which openings expose the under bump metallurgy layer. Afterwards a curing process is performed to cure the patterned photoresist layer. Following a solder paste fill-in process is performed to fill a solder paste into the openings. A reflow process is performed to form bumps from the solder paste in the openings. The patterned photoresist layer is removed.
摘要:
A lead-free solder bump fabrication process for producing a plurality of lead-free solder bumps over a wafer is provided. The lead-free solder bump fabrication process includes forming a lead-free pre-formed solder bump over each bonding pad on the wafer and then forming a patterned solder mask layer over the active surface of the wafer. The openings in the solder mask layer expose the respective lead-free pre-formed solder bumps on the wafer. Thereafter, lead-free solder material is deposited into the opening. The material composition of the lead-free solder material differs from the material composition of the lead-free pre-formed solder bump. A reflow process is conducted so that the lead-free pre-formed solder bump fuses with the lead-free solder material to form a lead-free solder bump. Finally, the solder mask layer is removed.
摘要:
A method of modifying the tin to lead ratio of a tin-lead bump forms a patterned solder mask over a substrate that comprises a first tin-lead bump formed thereon, the patterned solder mask having an opening that exposes the tin-lead bump. A solder material including tin and lead is filled in the opening of the solder mask over the first tin-lead bump. The solder material has a tin to lead ratio that differs from that of the first tin-lead bump. The solder material is reflowed to fuse with the first tin-lead bump, which forms a second tin-lead bump. The tin to lead ratio of the second tin-lead bump is thereby different from that of the first tin-lead bump.
摘要:
A method for preventing burnt fuse pads from further electrical connection suitable before the formation of bumps on the wafer. A dielectric layer is formed over the active surface of the wafer covering the bump pads and the fuse pads of the wafer, wherein a central region of the fuse pads is burnt to form a gap which allows the material of the dielectric layer to fill up the gap. Afterwards, either a part of the dielectric layer is removed and the part of the dielectric layer covering the fuse pads remainsor a part of the dielectric layer covering the bump pads is removed. Then, an under ball metallurgy layer is formed on the bump pads of the wafer so that the material of the under ball metallurgy layer does not cover the two sides of the fuse pad at the same time, or fill into the gap. As a result, the electrical isolation still remains.
摘要:
A chip-scale semiconductor package mainly includes a semiconductor chip, a substrate and a package body. Said chip is attached onto said substrate by an adhesive layer. Said chip has a plurality of bonding pads formed thereon. Said adhesive layer has an aperture corresponding to the bonding pads of said chip such that the bonding pads can be exposed within an aperture. Said substrate has several through-holes respectively corresponding to the bonding pads of said chip and parts of the area around the edge of said chip for dispensing of encapsulant after the soldering of leads of said substrate to the bonding pads of said chip. The encapsulant dispensed into the through-holes can flow from the surface of said chip to the edge thereof. Said package body has one portion provided within the through-hole of said substrate and another portion provided around the edge of said chip whereby encapsulation process is accomplished without having to turn the whole semiconductor package device.