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公开(公告)号:US20200083240A1
公开(公告)日:2020-03-12
申请号:US16684123
申请日:2019-11-14
发明人: Takehiko AMAKI , Yoshihisa KOJIMA , Toshikatsu HIDA , Marie Grace Izabelle Ange SIA , Riki SUZUKI , Shohei ASAMI
IPC分类号: H01L27/11556 , G11C16/10 , G11C16/08 , H01L27/11582 , H01L27/1157 , G11C16/26 , G11C7/04 , G11C16/16 , G11C16/04
摘要: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes blocks each containing memory cells. The controller is configured to instruct the semiconductor memory to execute a first operation and a second operation. In the first operation and the second operation, the semiconductor memory selects at least one of the blocks, and applies at least one voltage to all memory cells contained in said selected blocks. A number of blocks to which said voltage is applied per unit time in the second operation is larger than that in the first operation.
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公开(公告)号:US20180211708A1
公开(公告)日:2018-07-26
申请号:US15876923
申请日:2018-01-22
发明人: Shunichi IGAHARA , Toshikatsu HIDA
CPC分类号: G11C16/105 , G06F3/0607 , G06F3/061 , G06F3/0616 , G06F3/0632 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2212/1036 , G06F2212/7202 , G06F2212/7211 , G11C7/1096 , G11C11/5628 , G11C16/08 , G11C16/10 , G11C16/3495 , G11C2207/2209 , G11C2207/2245 , G11C2211/5641
摘要: A memory system includes a non-volatile memory having a plurality of memory cells, and a controller configured to carry out write operations in a first mode in which n-bit data is written per target memory cell of the non-volatile memory until an allowable data amount of data items has been written, and then, in a second mode in which m-bit data is written per target memory cell of the non-volatile memory, where n is an integer of one or more and m is an integer greater than n. The controller is further configured to detect that an idle state, in which a command has not been received from the host, has continued for a threshold period of time or more, increase the allowable data amount in response thereto, and after the increase, carry out a write operation to write data items in the non-volatile memory in the first mode.
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公开(公告)号:US20190332285A1
公开(公告)日:2019-10-31
申请号:US16506475
申请日:2019-07-09
发明人: Riki SUZUKI , Toshikatsu HIDA , Takehiko AMAKI , Shunichi IGAHARA
摘要: A memory system includes a nonvolatile semiconductor memory including a first memory region for storing start-up information and a second memory region for storing a copy of the start-up information, a volatile semiconductor memory, and a controller. The controller is configured to determine whether or not an address of the second memory region is stored in the volatile semiconductor memory, issue a first start-up read command, which designates no read address, to the nonvolatile semiconductor memory to read the start-up information from the first memory region if the address of the second memory region is not stored in the volatile semiconductor memory, and issue a second start-up read command, which designates the address of the second memory region as a read address, to read the start-up information from the second memory region if the address of the second memory region is stored in the volatile semiconductor memory.
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公开(公告)号:US20190220197A1
公开(公告)日:2019-07-18
申请号:US16364280
申请日:2019-03-26
发明人: Hirokuni YANO , Shinichi KANNO , Toshikatsu HIDA , Hidenori MATSUZAKI , Kazuya KITSUNAI , Shigehiro ASANO
CPC分类号: G06F3/0604 , G06F3/0616 , G06F3/0631 , G06F3/064 , G06F3/0656 , G06F3/0658 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G06F12/0804 , G06F12/0866 , G06F2212/7201 , G06F2212/7202 , G06F2212/7203 , G06F2212/7209 , G11C11/5628
摘要: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.
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公开(公告)号:US20190094927A1
公开(公告)日:2019-03-28
申请号:US16010680
申请日:2018-06-18
发明人: Yuka KUWANO , Takehiko AMAKI , Toshikatsu HIDA , Shohei ASAMI
摘要: A memory system includes a nonvolatile memory and a memory controller. The memory controller is configured to execute a process to adjust a temperature of the nonvolatile memory upon determining that the temperature is outside a preferred range.
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公开(公告)号:US20210183877A1
公开(公告)日:2021-06-17
申请号:US17182879
申请日:2021-02-23
发明人: Takehiko AMAKI , Yoshihisa KOJIMA , Toshikatsu HIDA , Marie Grace Izabelle Angeles SIA , Riki SUZUKI , Shohei ASAMI
IPC分类号: H01L27/11556 , G11C16/08 , G11C16/10 , G11C16/04 , G11C16/16 , G11C7/04 , G11C16/26 , H01L27/1157 , H01L27/11582
摘要: According to one embodiment, a memory system includes a semiconductor memory and a controller. The semiconductor memory includes blocks each containing memory cells. The controller is configured to instruct the semiconductor memory to execute a first operation and a second operation. In the first operation and the second operation, the semiconductor memory selects at least one of the blocks, and applies at least one voltage to all memory cells contained in said selected blocks. A number of blocks to which said voltage is applied per unit time in the second operation is larger than that in the first operation.
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公开(公告)号:US20210042034A1
公开(公告)日:2021-02-11
申请号:US17083529
申请日:2020-10-29
发明人: Hirokuni YANO , Shinichi KANNO , Toshikatsu HIDA , Hidenori MATSUZAKI , Kazuya KITSUNAI , Shigehiro ASANO
摘要: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.
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公开(公告)号:US20210005264A1
公开(公告)日:2021-01-07
申请号:US17027041
申请日:2020-09-21
IPC分类号: G11C16/10 , G11C16/04 , G11C16/14 , G06F3/06 , G11C11/56 , G11C16/08 , G11C16/34 , G11C29/02 , G11C29/42 , G11C16/32
摘要: According to one embodiment, a memory system includes a nonvolatile semiconductor memory, and a controller. The semiconductor memory includes a memory cell, and a write circuit configured to write data to the memory cell by applying a program voltage to the memory cell and comparing a threshold voltage of the memory cell with a first reference voltage corresponding to the write data. The write circuit is configured to execute a first programming operation to obtain a value of a write parameter by comparing the threshold voltage with a second reference voltage different from the first reference voltage.
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公开(公告)号:US20190095108A1
公开(公告)日:2019-03-28
申请号:US16199803
申请日:2018-11-26
发明人: Sayano AGA , Toshikatsu HIDA , Riki SUZUKI
CPC分类号: G06F3/0611 , G06F3/0656 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F12/0897 , G06F12/10 , G06F2212/1024 , G06F2212/2022 , G06F2212/7201
摘要: According to one embodiment, a memory system includes a first memory as a nonvolatile memory storing first data, second data as a translation table for accessing the first data, third data, fourth data as a translation table for accessing the third data, and including two memory cell arrays which are accessible in parallel, a second memory in which the second and fourth data is storable, and which stores a management table for managing information about whether the second and fourth data is stored in the second memory, a controller checking whether the second and fourth data is stored in the second memory based on the management table, a third memory storing an order of executing commands to be issued to the first memory, and a scheduler scheduling the order based on a result of the checking, two of a first command for reading the first data, a second command for reading the second data, a third command for reading the third data and a fourth command for reading the fourth data being executed in parallel in the order.
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公开(公告)号:US20180107413A1
公开(公告)日:2018-04-19
申请号:US15786959
申请日:2017-10-18
发明人: Riki SUZUKI , Toshikatsu HIDA , Takehiko AMAKI , Shunichi IGAHARA
IPC分类号: G06F3/06 , G06F12/0875 , G06F11/10 , G11C29/52
CPC分类号: G06F3/0619 , G06F3/0616 , G06F3/0634 , G06F3/0635 , G06F3/0656 , G06F3/0658 , G06F3/0679 , G06F11/1048 , G06F11/1068 , G06F12/0246 , G06F12/0875 , G06F2212/1032 , G06F2212/2022 , G06F2212/45 , G06F2212/7203 , G11C29/52 , G11C29/74 , G11C29/78
摘要: A memory system includes a nonvolatile semiconductor memory including a first memory region for storing start-up information and a second memory region for storing a copy of the start-up information, a volatile semiconductor memory, and a controller. The controller is configured to determine whether or not an address of the second memory region is stored in the volatile semiconductor memory, issue a first start-up read command, which designates no read address, to the nonvolatile semiconductor memory to read the start-up information from the first memory region if the address of the second memory region is not stored in the volatile semiconductor memory, and issue a second start-up read command, which designates the address of the second memory region as a read address, to read the start-up information from the second memory region if the address of the second memory region is stored in the volatile semiconductor memory.
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