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    READING OF START-UP INFORMATION FROM DIFFERENT MEMORY REGIONS OF A MEMORY SYSTEM
    4.
    发明申请
    READING OF START-UP INFORMATION FROM DIFFERENT MEMORY REGIONS OF A MEMORY SYSTEM 审中-公开

    公开(公告)号：US20190332285A1

    公开(公告)日：2019-10-31

    申请号：US16506475

    申请日：2019-07-09

    申请人： Toshiba Memory Corporation

    发明人： Riki SUZUKI ,  Toshikatsu HIDA ,  Takehiko AMAKI ,  Shunichi IGAHARA

    IPC分类号： G06F3/06 ,  G06F12/02 ,  G06F12/0875 ,  G06F11/10 ,  G11C29/00 ,  G11C29/52

    摘要： A memory system includes a nonvolatile semiconductor memory including a first memory region for storing start-up information and a second memory region for storing a copy of the start-up information, a volatile semiconductor memory, and a controller. The controller is configured to determine whether or not an address of the second memory region is stored in the volatile semiconductor memory, issue a first start-up read command, which designates no read address, to the nonvolatile semiconductor memory to read the start-up information from the first memory region if the address of the second memory region is not stored in the volatile semiconductor memory, and issue a second start-up read command, which designates the address of the second memory region as a read address, to read the start-up information from the second memory region if the address of the second memory region is stored in the volatile semiconductor memory.

    MEMORY SYSTEM, MEMORY SYSTEM CONTROL METHOD, AND PROGRAM
    7.
    发明申请
    MEMORY SYSTEM, MEMORY SYSTEM CONTROL METHOD, AND PROGRAM 审中-公开

    公开(公告)号：US20190295658A1

    公开(公告)日：2019-09-26

    申请号：US16166409

    申请日：2018-10-22

    申请人： Toshiba Memory Corporation

    发明人： Takehiko AMAKI ,  Riki Suzuki ,  Yoshihisa Kojima

    IPC分类号： G11C16/26 ,  G11C16/34 ,  G06F3/06 ,  G06F17/30

    摘要： According to one embodiment, a memory system comprises a nonvolatile memory, and a memory controller configured to manage a history value about setting of a read voltage in performing reading of data from the nonvolatile memory, in accordance with a first management unit and a second management unit, a size of the second management unit being smaller than a size of the first management unit. A first region of the nonvolatile memory corresponds to the first management unit. A plurality of second regions of the nonvolatile memory each correspond to the second management unit. The first region includes the plurality of second regions. The controller is configured to: obtain a first history value for the first region, and obtain a second history value for at least one of the second regions; and in execution of a read operation to a region included in the second regions, when the second history value for the region included in the second regions is not obtained, execute the read operation to the region included in the second regions by using the first history value obtained for the first region.

    MEMORY SYSTEM AND MEMORY CONTROL METHOD
    9.
    发明申请
    MEMORY SYSTEM AND MEMORY CONTROL METHOD 有权

    公开(公告)号：US20210020253A1

    公开(公告)日：2021-01-21

    申请号：US17060767

    申请日：2020-10-01

    申请人： TOSHIBA MEMORY CORPORATION

    发明人： Shigehiro ASANO ,  Neil BUXTON ,  Julien MARGETTS ,  Shunichi IGAHARA ,  Takehiko AMAKI

    IPC分类号： G11C16/34 ,  G11C8/12 ,  G11C16/26

    摘要： A memory system comprises a nonvolatile memory having a plurality of memory cells and a memory controller for controlling the nonvolatile memory. The plurality of memory cells is divided into different groups, and each group is assigned a threshold read count value from a predetermined range of read count values. The memory controller includes a counter which tracks a read count for each group, a determination circuit configured to compare the read count for each group tracked by the counter to the assigned threshold read count value for the group, and a nonvolatile memory read/write circuit configured to read data from the group when the determination circuit indicates the read count for the group has reached the assigned threshold read count value.

    MEMORY SYSTEM AND STORAGE SYSTEM
    10.
    发明申请
    MEMORY SYSTEM AND STORAGE SYSTEM 审中-公开

    公开(公告)号：US20200073592A1

    公开(公告)日：2020-03-05

    申请号：US16280994

    申请日：2019-02-20

    申请人： Toshiba Memory Corporation

    发明人： Suguru NISHIKAWA ,  Masanobu SHIRAKAWA ,  Yoshihisa KOJIMA ,  Takehiko AMAKI

    IPC分类号： G06F3/06 ,  G06F11/30 ,  G11C16/30 ,  G06F1/20

    摘要： A memory system includes a nonvolatile memory including a plurality of blocks, in each of which a plurality of memory cells is arranged between bit lines and a source line, and a memory controller configured to control an operation of the nonvolatile memory. The memory controller is configured to issue a warming command to the nonvolatile memory when a temperature of the nonvolatile memory is lower than a first temperature, and the nonvolatile memory, in response to the warming command, causes current to flow through at least one bit line connected to memory cells of a first block.