公开(公告)号：US08154133B2

公开(公告)日：2012-04-10

申请号：US12412576

申请日：2009-03-27

申请人： Taisuke Koroku ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke Koroku ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3512 ,  H01L2924/00

摘要： A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

摘要翻译： 在半导体基板的上表面的除了该表面的周边部分之外的区域中设置由低介电常数膜和布线组成的低介电常数膜/布线层叠结构。 低介电常数薄膜/布线层叠结构的周边侧表面被密封膜覆盖。 这提供了低介电常数膜不容易脱落的结构。 在这种情况下，在硅基板的下表面上设置下保护膜，以保护该下表面免受裂纹。

公开(公告)号：US20100144095A1

公开(公告)日：2010-06-10

申请号：US12632006

申请日：2009-12-07

申请人： Taisuke KOROKU ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke KOROKU ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L21/50

CPC分类号： H01L21/6836 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/19 ,  H01L24/94 ,  H01L2221/6834 ,  H01L2224/0401 ,  H01L2224/16 ,  H01L2224/18 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2224/11 ,  H01L2224/03

摘要： First, a trench formed in parts of a semiconductor wafer, a sealing film and others corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entirety including the separated silicon substrates from being easily warped.

摘要翻译： 首先，形成在半导体晶片的一部分中的沟槽，密封膜等与切割街道及其两侧对应的沟槽。 在这种状态下，通过形成沟槽将半导体晶片分离成硅衬底。 然后，在包括沟槽的内部的每个硅衬底的底表面上形成树脂保护膜。 在这种情况下，将半导体晶片分离成硅基板。 然而，支撑板通过粘合剂层固定在柱状电极和密封膜的上表面上。 因此，当形成树脂保护膜时，可以防止包含分离的硅衬底的整体容易翘曲。

公开(公告)号：US20090243097A1

公开(公告)日：2009-10-01

申请号：US12412576

申请日：2009-03-27

申请人： Taisuke KOROKU ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke KOROKU ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L23/488 ,  H01L21/762

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3512 ,  H01L2924/00

摘要： A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

摘要翻译： 在半导体基板的上表面的除了该表面的周边部分之外的区域中设置由低介电常数膜和布线组成的低介电常数膜/布线层叠结构。 低介电常数薄膜/布线层叠结构的周边侧表面被密封膜覆盖。 这提供了低介电常数膜不容易脱落的结构。 在这种情况下，在硅基板的下表面上设置下保护膜，以保护该下表面免受裂纹。

公开(公告)号：US20100144096A1

公开(公告)日：2010-06-10

申请号：US12632033

申请日：2009-12-07

申请人： Taisuke Koroku ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke Koroku ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L21/60

CPC分类号： H01L21/561 ,  H01L21/6836 ,  H01L23/3114 ,  H01L23/3135 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2924/14 ,  H01L2924/19041

摘要： First, a trench is formed in parts of a semiconductor wafer, a sealing film and other elements corresponding to a dicing street and both sides thereof. In this state, the semiconductor wafer is separated into silicon substrates by the formation of the trench. Then, a resin protective film is formed on the bottom surface of each silicon substrate including the inner part of the trench. In this case, the semiconductor wafer is separated into the silicon substrates. However, a support plate is affixed to the upper surfaces of the columnar electrode and the sealing film via an adhesive layer. Therefore, when the resin protective film is formed, it is possible to prevent the entire workpiece including the separated silicon substrates from being easily warped.

公开(公告)号：US07863750B2

公开(公告)日：2011-01-04

申请号：US12507188

申请日：2009-07-22

申请人： Junji Shiota ,  Taisuke Koroku ,  Nobumitsu Fujii ,  Osamu Kuwabara ,  Osamu Okada

发明人： Junji Shiota ,  Taisuke Koroku ,  Nobumitsu Fujii ,  Osamu Kuwabara ,  Osamu Okada

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/053 ,  H01L23/12

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02331 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014

摘要： In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

摘要翻译： 在这种半导体装置的制造方法中，在半导体晶片的整个表面上施加了密封膜并硬化后，在密封膜中形成用于形成侧部保护膜的第二沟槽，并且在顶部表面侧 半导体晶片。 换句话说，密封膜形成为在半导体晶片的顶面侧未形成导致强度降低的槽的状态。 由于在形成密封膜之后在半导体晶片的顶表面侧形成第二凹槽，所以当由液体树脂制成的密封膜硬化时，半导体晶片不太可能翘曲。

公开(公告)号：US20100019371A1

公开(公告)日：2010-01-28

申请号：US12507188

申请日：2009-07-22

申请人： Junji SHIOTA ,  Talsuke Koroku ,  Nobumitsu Fujii ,  Osamu Kuwabara ,  Osamu Okada

发明人： Junji SHIOTA ,  Talsuke Koroku ,  Nobumitsu Fujii ,  Osamu Kuwabara ,  Osamu Okada

IPC分类号： H01L23/48 ,  H01L21/78

CPC分类号： H01L21/78 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/02331 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/16 ,  H01L2924/01019 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/00014

摘要： In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.

摘要翻译： 在这种半导体装置的制造方法中，在半导体晶片的整个表面上施加了密封膜并硬化后，在密封膜中形成用于形成侧部保护膜的第二沟槽，并且在顶部表面侧 半导体晶片。 换句话说，密封膜形成为在半导体晶片的顶面侧未形成导致强度降低的槽的状态。 由于在形成密封膜之后在半导体晶片的顶表面侧形成第二凹槽，所以当由液体树脂制成的密封膜硬化时，半导体晶片不太可能翘曲。

公开(公告)号：US07944064B2

公开(公告)日：2011-05-17

申请号：US11656866

申请日：2007-01-22

申请人： Shinji Wakisaka ,  Tomohiro Ito ,  Shigeru Yokoyama ,  Osamu Kuwabara ,  Norihiko Kaneko ,  Syouichi Kotani

发明人： Shinji Wakisaka ,  Tomohiro Ito ,  Shigeru Yokoyama ,  Osamu Kuwabara ,  Norihiko Kaneko ,  Syouichi Kotani

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/13 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2223/5448 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05647 ,  H01L2224/11 ,  H01L2224/1147 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/01013 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

摘要： A semiconductor device includes a semiconductor substrate which has a plurality of semiconductor device formation regions and alignment mark formation region having the same planar size as that of the semiconductor device formation region, a plurality of post electrodes which are formed in each semiconductor device formation region, and an alignment post electrode which is formed in the alignment mark formation region and smaller in number than the post electrodes formed in each semiconductor device formation region.

摘要翻译： 半导体器件包括具有多个半导体器件形成区域和具有与半导体器件形成区域相同的平面尺寸的对准标记形成区域的半导体衬底，形成在每个半导体器件形成区域中的多个柱状电极， 以及形成在对准标记形成区域中并且数量小于形成在每个半导体器件形成区域中的柱状电极的定向柱状电极。

公开(公告)号：US20080235977A1

公开(公告)日：2008-10-02

申请号：US12079750

申请日：2008-03-28

申请人： Osamu Kuwabara

发明人： Osamu Kuwabara

IPC分类号： F26B21/02 ,  F26B21/06 ,  F26B21/08 ,  B08B3/00 ,  F26B21/00

CPC分类号： D06F58/206

摘要： In a laundry washing/drying machine involving drying by a heat pump cycle, in an initial stage of the drying operation the heat within an air circulation path is deficient and therefore it is impossible to effect quick heating of air on a drum inlet side up to a sufficiently high temperature. According to the present invention there is provided a drying unit capable of raising the drum inlet air temperature quickly up to a sufficiently high temperature in an initial stage of the drying operation and thereby shortening the drying time. The drying unit includes a heat pump cycle device for performing a cycle of radiating, with use of a radiator, the heat of a refrigerant compressed by a compressor, passing the refrigerant through a pressure reducing/expansion valve, evaporating the refrigerant in an evaporator and compressing the refrigerant again by the compressor, an air circulation path for allowing air to be circulated by a blower in such a manner that air heated by the radiator is introduced into a drying chamber to dry the laundry, exhaust air discharged from the drying chamber is passed through the evaporator, then is heated again by the radiator and the air thus dehumidified is circulated by the blower, and an external heat source applying device for applying the heat of an external heat source to the evaporator to quicken the rise in temperature of the air in an initial stage of the drying operation.

摘要翻译： 在涉及通过热泵循环进行干燥的衣物洗涤/干燥机中，在干燥运转的初始阶段，空气循环路径内的热量不足，因此不可能快速加热鼓入口侧的空气直至 足够高的温度。 根据本发明，提供一种干燥装置，其能够在干燥操作的初始阶段将鼓入口空气温度快速升高至足够高的温度，从而缩短干燥时间。 干燥单元包括一个热泵循环装置，用于执行利用散热器辐射由压缩机压缩的制冷剂的热量的循环，使制冷剂通过减压/膨胀阀，蒸发蒸发器中的制冷剂， 通过压缩机再次压缩制冷剂，空气循环路径用于允许空气由鼓风机循环，使得由散热器加热的空气被引入到干燥室中以干燥衣物，从干燥室排出的排气是 通过蒸发器，然后被散热器再次加热，由此除湿的空气被鼓风机循环，外部热源施加装置用于将外部热源的热量施加到蒸发器，以加快温度的升高 空气在干燥操作的初始阶段。

公开(公告)号：US06603191B2

公开(公告)日：2003-08-05

申请号：US09858230

申请日：2001-05-15

申请人： Takeshi Wakabayashi ,  Osamu Kuwabara

发明人： Takeshi Wakabayashi ,  Osamu Kuwabara

IPC分类号： H01L23544

CPC分类号： H01L21/568 ,  H01L21/56 ,  H01L21/561 ,  H01L21/6836 ,  H01L23/3107 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L24/94 ,  H01L24/97 ,  H01L2221/68327 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/3512 ,  H01L2924/00

摘要： The back surface of a semiconductor wafer having a plurality of chip-forming regions each provided with a plurality of connection pads on the surface is bonded to a dicing tape, followed by fully cutting the semiconductor wafer along a cut line so as to form a cutting groove. Then, a front side protective film is formed on the front surface. The front side protective film has an open portion exposing the central portion of the connection pad, and is filled in the cutting groove. After formation of a columnar electrode connected to the connection pad via a wiring, a sealing film is formed on the front side protective film. Further, the cutting groove filled with the front side protective film is cut in substantially the center in the width direction, followed by peeling off the dicing tape so as to form individual semiconductor devices each forming a chip.

摘要翻译： 具有多个芯片形成区域的半导体晶片的背面，每个芯片形成区域在表面上设置有多个连接焊盘，接合到切割带上，然后沿切割线完全切割半导体晶片，以形成切割 槽。 然后，在前表面上形成前侧保护膜。 前侧保护膜具有暴露连接垫的中心部分的开放部分，并且被填充在切割槽中。 在通过布线形成连接到连接焊盘的柱状电极之后，在前侧保护膜上形成密封膜。 此外，填充有前侧保护膜的切割槽在宽度方向上基本上被切割成中心，然后剥离切割带，从而形成各自形成芯片的各个半导体器件。

公开(公告)号：US08347520B2

公开(公告)日：2013-01-08

申请号：US12079750

申请日：2008-03-28

申请人： Osamu Kuwabara

发明人： Osamu Kuwabara

IPC分类号： F26B21/08

CPC分类号： D06F58/206

摘要： In a laundry washing/drying machine involving drying by a heat pump cycle, in an initial stage of the drying operation the heat within an air circulation path is deficient and therefore it is impossible to effect quick heating of air on a drum inlet side up to a sufficiently high temperature. According to the present invention there is provided a drying unit capable of raising the drum inlet air temperature quickly up to a sufficiently high temperature in an initial stage of the drying operation and thereby shortening the drying time. The drying unit includes a heat pump cycle device for performing a cycle of radiating, with use of a radiator, the heat of a refrigerant compressed by a compressor, passing the refrigerant through a pressure reducing/expansion valve, evaporating the refrigerant in an evaporator and compressing the refrigerant again by the compressor, an air circulation path for allowing air to be circulated by a blower in such a manner that air heated by the radiator is introduced into a drying chamber to dry the laundry, exhaust air discharged from the drying chamber is passed through the evaporator, then is heated again by the radiator and the air thus dehumidified is circulated by the blower, and an external heat source applying device for applying the heat of an external heat source to the evaporator to quicken the rise in temperature of the air in an initial stage of the drying operation.

摘要翻译： 在涉及通过热泵循环进行干燥的衣物洗涤/干燥机中，在干燥运转的初始阶段，空气循环路径内的热量不足，因此不可能快速加热鼓入口侧的空气直至 足够高的温度。 根据本发明，提供一种干燥装置，其能够在干燥操作的初始阶段将鼓入口空气温度快速升高至足够高的温度，从而缩短干燥时间。 干燥单元包括一个热泵循环装置，用于执行利用散热器辐射由压缩机压缩的制冷剂的热量的循环，使制冷剂通过减压/膨胀阀，蒸发蒸发器中的制冷剂， 通过压缩机再次压缩制冷剂，空气循环路径用于允许空气由鼓风机循环，使得由散热器加热的空气被引入到干燥室中以干燥衣物，从干燥室排出的排气是 通过蒸发器，然后被散热器再次加热，由此除湿的空气被鼓风机循环，外部热源施加装置用于将外部热源的热量施加到蒸发器，以加快温度的升高 空气在干燥操作的初始阶段。