公开(公告)号：US5872022A

公开(公告)日：1999-02-16

申请号：US522933

申请日：1995-09-01

申请人： Takashi Motoda ,  Manabu Kato ,  Masayoshi Takemi

发明人： Takashi Motoda ,  Manabu Kato ,  Masayoshi Takemi

IPC分类号： H01L21/302 ,  H01L21/20 ,  H01L21/306 ,  H01S3/094 ,  H01S5/00 ,  H01S5/026 ,  H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S5/227 ,  H01S5/343 ,  H01S5/40 ,  H01L21/00

CPC分类号： B82Y20/00 ,  H01L21/02392 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/30612 ,  H01S5/026 ,  H01S5/12 ,  H01S5/2232 ,  H01S5/227 ,  H01S5/4031 ,  H01S2304/04 ,  H01S5/1228 ,  H01S5/2077 ,  H01S5/2081 ,  H01S5/2086 ,  H01S5/2237 ,  H01S5/2275 ,  H01S5/34306 ,  H01S5/3434

摘要： A method of etching a III-V compound semiconductor uses an etching gas including the group V element of the III-V compound semiconductor substrate layer while keeping the III-V compound semiconductor layer at a temperature higher than the crystal growth temperature of the III-V compound semiconductor. Etching using this method provides a higher degree of controllability than wet etching. In addition, because no etching solution is employed, the etching method can be employed in a crystal growth apparatus. Further, because an element of the III-V compound semiconductor layer is employed in the etching gas, incorporation of residual impurities can be prevented, keeping the etched surface clean.

摘要翻译： 蚀刻III-V族化合物半导体的方法使用包含III-V族化合物半导体衬底层的V族元素的蚀刻气体，同时将III-V族化合物半导体层保持在比III- V化合物半导体。 使用该方法的蚀刻提供比湿蚀刻更高的可控性。 此外，由于不使用蚀刻溶液，因此可以在晶体生长装置中使用蚀刻方法。 此外，由于在蚀刻气体中使用III-V族化合物半导体层的元素，因此可以防止残留杂质的并入，保持蚀刻表面的清洁。

公开(公告)号：US5604764A

公开(公告)日：1997-02-18

申请号：US611089

申请日：1996-03-05

申请人： Takashi Motoda ,  Manabu Kato

发明人： Takashi Motoda ,  Manabu Kato

IPC分类号： H01S5/16 ,  H01S5/22 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01S5/164 ,  H01S5/2227 ,  H01S5/2272 ,  Y10S117/913

摘要： A method of fabricating a semiconductor laser includes forming a mask having a stripe opening in a direction on a {100} surface of a first conductivity type substrate, and growing a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer on the {100} surface using the mask, thereby producing a stripe-shaped ridge in which the active layer and the first conductivity type lower cladding layer are covered with the second conductivity type upper cladding layer. The stripe-shaped ridge has an ordinary mesa-shaped cross-section in a direction perpendicular to the stripe direction and a symmetrical hexagonal cross-section in the stripe direction. In this method, since the conventional selective etching for forming the ridge is dispensed with, the processing precision of the ridge is improved. Further, the second conductivity type cladding layer and the active layer grown on the side surfaces of the first conductivity type cladding layer are very thin and have low dopant incorporating efficiencies, so that portions of the first conductivity type cladding layer grown at the side surfaces of the ridge have high resistivity, and reactive current is blocked by these high-resistance portions.

摘要翻译： 一种制造半导体激光器的方法包括：在第一导电型衬底的{100}表面上形成具有沿<011>方向的条纹开口的掩模，并且生长包括第一导电类型包覆层的双异质结结构 使用掩模在{100}表面上形成第二导电型包覆层，由此产生条状脊，其中有源层和第一导电类型下覆盖层被第二导电类型上包层覆盖 。 条形脊在垂直于条纹方向的方向上具有普通的台面状横截面，并且在条带方向上具有对称的六边形横截面。 在该方法中，由于省去了用于形成脊的常规选择性蚀刻，所以提高了脊的加工精度。 此外，在第一导电型包覆层的侧面上生长的第二导电型包覆层和有源层非常薄，并且具有低掺杂剂结合效率，使得在第一导电类型包层的侧表面生长的部分 脊具有高电阻率，并且无功电流被这些高电阻部分阻挡。

公开(公告)号：US5582647A

公开(公告)日：1996-12-10

申请号：US358465

申请日：1994-12-19

申请人： Manabu Kato ,  Takashi Motoda ,  Tatsuya Kimura ,  Kaoru Kadoiwa ,  Zempei Kawazu ,  Nariaki Fujii

发明人： Manabu Kato ,  Takashi Motoda ,  Tatsuya Kimura ,  Kaoru Kadoiwa ,  Zempei Kawazu ,  Nariaki Fujii

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  H01L21/205 ,  A01K15/04

CPC分类号： C23C16/4482 ,  C23C16/52

摘要： A material supplying apparatus includes a container for storing a solution; an inlet pipe for introducing a carrier gas and an outlet pipe; electrodes disposed in the container over the depth direction of the container and forming a capacitor; and apparatus for calculating a residual amount of the solution in the container from the capacitance of the capacitor formed by the electrodes. The solution is used as the dielectric of the capacitor formed in the container and the capacitance varies according to the quantity of solution so that the residual amount of the solution and the time to replenish the solution are calculated in a simple structure having no moving parts.

摘要翻译： 材料供给装置包括用于储存溶液的容器; 用于引入载气和出口管的入口管; 在容器的深度方向上设置在容器中并形成电容器的电极; 以及根据由电极形成的电容器的电容计算容器中的溶液残留量的装置。 该溶液用作形成在容器中的电容器的电介质，并且电容根据溶液量而变化，使得溶液的剩余量和补充溶液的时间以不具有移动部件的简单结构计算。

公开(公告)号：US5737350A

公开(公告)日：1998-04-07

申请号：US529715

申请日：1995-09-18

申请人： Takashi Motoda ,  Manabu Kato

发明人： Takashi Motoda ,  Manabu Kato

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/3434 ,  H01S5/2013 ,  H01S5/3407 ,  H01S5/3408 ,  H01S5/34306 ,  H01S5/34313

摘要： A multi-quantum barrier layer includes alternatingly laminated barrier layers of a III-V compound semiconductor material and well layers of a III-V compound semiconductor material including the same Group V element as in the barrier layers. During the formation of the multi-quantum barrier layer it is not necessary to switch the Group V element source gas at the interface between a barrier layer and a well layer so that this interface is abrupt, improving the electron reflection efficiency of the multi-quantum barrier layer.

摘要翻译： 多量子势垒层包括III-V族化合物半导体材料的交替叠层的阻挡层和III-V族化合物半导体材料的阱层，其包含与阻挡层中相同的V族元素。 在多量子势垒层的形成期间，不需要在阻挡层和阱层之间的界面处切换V族元素源气体，使得该界面突然，提高多量子阱的电子反射效率 阻挡层。

公开(公告)号：US5544187A

公开(公告)日：1996-08-06

申请号：US343909

申请日：1994-11-17

申请人： Kaoru Kadoiwa ,  Takashi Motoda ,  Manabu Kato

发明人： Kaoru Kadoiwa ,  Takashi Motoda ,  Manabu Kato

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2013 ,  H01S5/34326 ,  Y10S977/761 ,  Y10S977/833

摘要： A multiquantum barrier (MQB) structure includes a first superlattice layer and a second superlattice layer disposed continuously with the first superlattice layer. The first superlattice layer includes well layers having the same thickness and barrier layers having the same thickness, the well layers and barrier layers being alternatingly laminated. The second superlattice layer includes well layers having the same thickness, the well and barrier layers being alternatingly laminated. The second superlattice layer has a high electron reflectivity in an electron energy region where the electron reflectivity of the second first superlattice structure is low. Therefore, the high reflectivity of the second superlattice layer compensates for the low reflectivity of the first superlattice layer whereby a high electron reflectivity is maintained in the MQB structure.

摘要翻译： 多量子屏障（MQB）结构包括与第一超晶格层连续设置的第一超晶格层和第二超晶格层。 第一超晶格层包括具有相同厚度的阱层和具有相同厚度的势垒层，阱层和阻挡层交替层叠。 第二超晶格层包括具有相同厚度的阱层，阱和阻挡层交替层压。 第二超晶格层在第二第一超晶格结构的电子反射率低的电子能区域具有高电子反射率。 因此，第二超晶格层的高反射率补偿第一超晶格层的低反射率，从而在MQB结构中保持高的电子反射率。

公开(公告)号：US5763291A

公开(公告)日：1998-06-09

申请号：US523513

申请日：1995-09-01

申请人： Takashi Motoda ,  Manabu Kato

发明人： Takashi Motoda ,  Manabu Kato

IPC分类号： H01L21/306 ,  C30B25/02 ,  H01L21/203 ,  H01L21/205 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/227 ,  H01S5/343 ,  H01L21/00

CPC分类号： C30B25/02 ,  B82Y20/00 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02631 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2304/02 ,  H01S2304/04 ,  H01S5/2081 ,  H01S5/209 ,  H01S5/2205 ,  H01S5/2272

摘要： A method of fabricating a semiconductor laser producing visible light includes forming a double heterojunction (DH) structure on a GaAs substrate including an n type GaAs buffer layer, an n type AlGaInP cladding layer, an Al.sub.x Ga.sub.(1-x) InP active layer, a first p type AlGaInP cladding layer, a p type GaInP etch stopping layer, a second p type AlGaInP cladding layer, and a p type GaAs cap layer. A stripe-shaped mask is formed on the DH structure, the p type GaAs cap layer is selectively etched using the mask, and the second p type AlGaInP cladding layer is selectively etched to the p type GaInP etch stopping layer to form a stripe-shaped ridge. Therefore, a high precision ridge can be formed easily.

摘要翻译： 制造可见光的半导体激光器的方法包括在包括n型GaAs缓冲层，n型AlGaInP包层，Al x Ga（1-x）InP活性层， 第一p型AlGaInP包覆层，p型GaInP蚀刻停止层，第二p型AlGaInP包覆层和ap型GaAs覆盖层。 在DH结构上形成条状掩模，使用掩模选择性地蚀刻p型GaAs覆盖层，并且将第二p型AlGaInP包层选择性蚀刻到p型GaInP蚀刻停止层以形成条形 岭。 因此，可以容易地形成高精度的脊。

公开(公告)号：US5741359A

公开(公告)日：1998-04-21

申请号：US524776

申请日：1995-09-07

申请人： Takashi Motoda ,  Manabu Kato

发明人： Takashi Motoda ,  Manabu Kato

IPC分类号： H01L21/20 ,  C30B13/16 ,  C30B13/22 ,  H01L21/02 ,  H01L21/336 ,  H01L27/12 ,  H01L29/786 ,  C30B13/06

CPC分类号： C30B13/16 ,  C30B13/22 ,  Y10S117/904 ,  Y10T117/1076 ,  Y10T117/1088

摘要： An apparatus for zone-melting recrystallization of a semiconductor layer includes a first heater, on which a semiconductor wafer including the semiconductor layer and upper and lower insulating films sandwiching the semiconductor layer is mounted, for radiantly heating a rear surface of the semiconductor wafer to a temperature at which the semiconductor layer and the insulating layers are not melted; and a second heater disposed above the semiconductor wafer and radiantly heating a front surface of the semiconductor wafer. The second heater has a heat generating point that produces a heated spot in the semiconductor layer and moves spirally while maintaining a fixed distance from the semiconductor wafer, thereby producing a large-area monocrystalline region in the semiconductor layer. In this zone-melting recrystallization, a single crystalline nucleus is produced in the semiconductor layer, and the entire semiconductor layer is recrystallized with the crystalline nucleus as a seed crystal. Therefore, the semiconductor layer is recrystallized with the same crystal structure and orientation as the crystalline nucleus, so that grain boundaries are reduced, resulting in a semiconductor layer with increased grain size.

摘要翻译： 半导体层的区域熔融再结晶装置包括：第一加热器，其上安装有半导体层的半导体晶片和夹着半导体层的上下绝缘膜，用于将半导体晶片的背面辐射加热至 半导体层和绝缘层不熔化的温度; 以及设置在半导体晶片上方的第二加热器，并且辐射加热半导体晶片的前表面。 第二加热器具有在半导体层中产生加热点并在与半导体晶片保持固定距离的同时螺旋地移动的发热点，从而在半导体层中产生大面积单晶区域。 在该区域熔融重结晶中，在半导体层中产生单晶核，整个半导体层以结晶核作为晶种重结晶。 因此，半导体层以与晶核相同的晶体结构和取向重结晶，从而晶界减小，导致晶粒尺寸增加的半导体层。

公开(公告)号：US5656539A

公开(公告)日：1997-08-12

申请号：US399649

申请日：1995-03-07

申请人： Takashi Motoda ,  Manabu Kato

发明人： Takashi Motoda ,  Manabu Kato

IPC分类号： H01S5/16 ,  H01S5/22 ,  H01S5/227 ,  H01L21/20

CPC分类号： H01S5/227 ,  H01S5/164 ,  H01S5/2227 ,  H01S5/2272 ,  Y10S117/913

摘要： A method of fabricating a semiconductor laser includes forming a mask having a stripe opening in a direction on a {100} surface of a first conductivity type substrate, and growing a double-heterojunction structure including a first conductivity type cladding layer, an active layer, and a second conductivity type cladding layer on the {100} surface using the mask, thereby producing a stripe-shaped ridge in which the active layer and the first conductivity type lower cladding layer are covered with the second conductivity type upper cladding layer. The stripe-shaped ridge has an ordinary mesa-shaped cross-section in a direction perpendicular to the stripe direction and a symmetrical hexagonal cross-section in the stripe direction. In this method, since the conventional selective etching for forming the ridge is dispensed with, the processing precision of the ridge is improved. Further, the second conductivity type cladding layer and the active layer grown on the side surfaces of the first conductivity type cladding layer are very thin and have low dopant incorporating efficiencies, so that portions of the first conductivity type cladding layer grown at the side surfaces of the ridge have high resistivity, and reactive current is blocked by these high-resistance portions.

摘要翻译： 一种制造半导体激光器的方法包括：在第一导电型衬底的{100}表面上形成具有沿<011>方向的条纹开口的掩模，并且生长包括第一导电类型包覆层的双异质结结构 使用掩模在{100}表面上形成第二导电型包覆层，由此产生条状脊，其中有源层和第一导电类型下覆盖层被第二导电类型上包层覆盖 。 条形脊在垂直于条纹方向的方向上具有普通的台面状横截面，并且在条带方向上具有对称的六边形横截面。 在该方法中，由于省去了用于形成脊的常规选择性蚀刻，所以提高了脊的加工精度。 此外，在第一导电型包覆层的侧面上生长的第二导电型包覆层和有源层非常薄，并且具有低掺杂剂结合效率，使得在第一导电类型包层的侧表面生长的部分 脊具有高电阻率，并且无功电流被这些高电阻部分阻挡。

公开(公告)号：US5573976A

公开(公告)日：1996-11-12

申请号：US555417

申请日：1995-11-09

申请人： Manabu Kato ,  Takashi Motoda

发明人： Manabu Kato ,  Takashi Motoda

IPC分类号： H01L33/06 ,  H01L33/30 ,  H01S5/00 ,  H01S5/02 ,  H01S5/16 ,  H01S5/323 ,  H01L21/20

CPC分类号： H01S5/164 ,  H01S2304/00 ,  H01S2304/02 ,  H01S2304/04 ,  H01S5/0207 ,  H01S5/16 ,  H01S5/32325 ,  Y10S148/095 ,  Y10S438/925

摘要： A method of fabricating a semiconductor laser includes forming an active layer including a compound semiconductor material on a semiconductor substrate, the compound semiconductor material having an energy band gap that monotonically increases as the growth temperature of the material rises above a certain growth temperature, including growing a window structure forming region including at least a region which serves as a waveguide in the proximity of a laser resonator facet at a higher temperature than a region outside the window structure forming region. Therefore, the band gap energy of the window structure forming region is larger than that of the region outside the window structure forming region. Therefore, a semiconductor laser having a window structure can easily be fabricated with a high yield and with great repeatability.

摘要翻译： 制造半导体激光器的方法包括在半导体衬底上形成包括化合物半导体材料的有源层，所述化合物半导体材料具有当材料的生长温度升高到某一生长温度以上时包含增长的单位增加的能带隙 窗口结构形成区域至少包括在比窗口结构形成区域外的区域更高的温度下在激光谐振器面附近用作波导的区域。 因此，窗口结构形成区域的带隙能量大于窗口结构形成区域外的区域的带隙能量。 因此，具有窗口结构的半导体激光器可以容易地以高产率和高重复性制造。

公开(公告)号：US5677922A

公开(公告)日：1997-10-14

申请号：US589462

申请日：1996-01-22

申请人： Norio Hayafuji ,  Takashi Motoda

发明人： Norio Hayafuji ,  Takashi Motoda

IPC分类号： H01L21/318 ,  H01S5/00 ,  H01S5/02 ,  H01S5/16 ,  H01S5/323 ,  H01S5/343 ,  H01S5/40 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/162 ,  H01S5/164 ,  H01S5/0201 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/4031

摘要： A semiconductor laser according to the invention includes a compound semiconductor substrate having a surface with a first crystalline orientation; crystalline semiconductor layers including a first cladding layer, an active layer, and a second cladding layer successively disposed on the surface of the semiconductor substrate and including first and second window surfaces transverse to the surface of the semiconductor substrate and having a second crystalline orientation; a doped crystalline semiconductor window layer disposed on the window surfaces; and electrodes respectively disposed on the crystalline layers and the semiconductor substrate.

摘要翻译： 根据本发明的半导体激光器包括具有第一晶体取向的表面的化合物半导体衬底; 包括依次设置在半导体衬底的表面上的第一覆层，有源层和第二覆层，并且包括横向于半导体衬底的表面并且具有第二晶体取向的第一和第二窗表面; 设置在窗表面上的掺杂晶体半导体窗口层; 以及分别设置在结晶层和半导体衬底上的电极。