摘要:
A solder 14 is formed, by a plating method, on a connecting surface 21A and a side surface 21B in a connecting pad 21 of a wiring board 11 which is opposed to a metal bump 13 formed on an electrode pad 31 of a semiconductor chip 12, and subsequently, the solder 14 is molten to form an accumulated solder 15 taking a convex shape on the connecting surface 21A of the connecting pad 21 and the metal bump 13 is then mounted on the connecting surface 21A of the connecting pad 21 on which the accumulated solder is formed, and the accumulated solder 15 and the metal bump 13 are thus bonded to each other.
摘要:
A solder 14 is formed, by a plating method, on a connecting surface 21A and a side surface 21B in a connecting pad 21 of a wiring board 11 which is opposed to a metal bump 13 formed on an electrode pad 31 of a semiconductor chip 12, and subsequently, the solder 14 is molten to form an accumulated solder 15 taking a convex shape on the connecting surface 21A of the connecting pad 21 and the metal bump 13 is then mounted on the connecting surface 21A of the connecting pad 21 on which the accumulated solder is formed, and the accumulated solder 15 and the metal bump 13 are thus bonded to each other.
摘要:
A solder bump forming method of carrying out a reflow treatment over a conductive ball mounted on a plurality of pads, thereby forming a solder bump, includes a metal film forming step of forming a metal film capable of chemically reacting to a tackifying compound on the pads, an organic sticking layer forming step of causing a solution containing the tackifying compound to chemically react to the metal film, thereby forming an organic sticking layer on the metal film, and a conductive ball mounting step of supplying the conductive ball on the pads having the organic sticking layer formed thereon, thereby mounting the conductive ball on the pads through the metal film.
摘要:
The present invention provides a non-cyanide electroless gold plating solution free from a cyanide compound, comprising, as a completing agent of gold, a compound represented by the formula shown below or a salt thereof: X—(CH2)n—SH wherein n is 2 or 3 and X is SO3H or NH2, and having a pH value of 7 or less. The invention also provides a process for electroless gold plating using the non-cyanide electroless gold plating solution.
摘要:
The present invention provides a non-cyanide electroless gold plating solution free from a cyanide compound, comprising, as a completing agent of gold, a compound represented by the formula shown below or a salt thereof: X—(CH2)n—SH wherein n is 2 or 3 and X is SO3H or NH2, and having a pH value of 7 or less. The invention also provides a process for electroless gold plating using the non-cyanide electroless gold plating solution.
摘要:
A solder bump forming method of carrying out a reflow treatment over a conductive ball mounted on a plurality of pads, thereby forming a solder bump, includes a metal film forming step of forming a metal film capable of chemically reacting to a tackifying compound on the pads, an organic sticking layer forming step of causing a solution containing the tackifying compound to chemically react to the metal film, thereby forming an organic sticking layer on the metal film, and a conductive ball mounting step of supplying the conductive ball on the pads having the organic sticking layer formed thereon, thereby mounting the conductive ball on the pads through the metal film.
摘要:
In a reaction chamber (20), a used alkaline permanganate etching solution (12) is accommodated and an alkaline earth hydroxide (14) such as calcium hydroxide is added in the reaction chamber, a liquid inside of the reaction chamber is agitated, the liquid is exhausted from a side portion or a top portion of the reaction chamber through a filter (28), a precipitate (26) adhered to the filter is scraped off, and a precipitate containing a hardly soluble or insoluble matter incapable of passing through the filter and accumulated on a bottom portion of the reaction chamber is exhausted from the reaction chamber.
摘要:
A method of manufacturing a radiating plate using In as a thermal conducting bonding material 20 provided between a semiconductor device and a radiating plate 14 and serving to bond a back surface of the semiconductor device to the radiating plate, includes the steps of carrying out a cleaning treatment for cleaning a surface of the radiating plate 14, supplying the In to the radiating plate 14, heating and melting the In and hermetically adhering the In 18 to the radiating plate, thereby obtaining an In integral type radiating plate.
摘要:
A method of plating for filling via holes, in which each via hole is formed in an insulation layer covering a substrate so as to expose, at its bottom, part of a conductor layer located on the substrate. A copper film is formed on the top surface of the insulation layer covering the substrate, and the side walls and bottoms of the respective via holes. A strike plating of copper is provided on the copper film, and the substrate is immersed in an aqueous solution containing a plating promoter to thereby deposit the plating promoter on the surface of the copper strike. The plating promoter is removed from the copper strike plating located on the top surface insulation layer while leaving the plating promoter on the side walls and bottoms of the respective via holes. The substrate is subsequently electroplated with copper to fill the via holes.
摘要:
A drive torque of a vehicle drive wheel is controlled so that a slip ratio between the drive wheel and a road surface is equal to a target value. A determining function of which the sign varies when the slip ratio is equal to the target value, and a switching function comprising a time integral of the determining function, are set, and the drive torque target value is set such that it is directly proportional to the switching function. Alternatively, the drive torque target value is set based on the switching function which is set equal to the determining function and corrected based on an angular acceleration of the drive wheel.