SEMICONDUCTOR MEMORY DEVICE
    5.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 失效
    半导体存储器件

    公开(公告)号:US20090166829A1

    公开(公告)日:2009-07-02

    申请号:US12343921

    申请日:2008-12-24

    IPC分类号: H01L23/495

    摘要: A semiconductor memory device includes: a wiring board including an element mounting portion and connection pads; a first element group including a plurality of semiconductor elements each having electrode pads arranged along one of outer sides of the semiconductor element, the plurality of semiconductor elements being layered stepwise on the element mounting portion of the wiring board in a way that pad arrangement sides of the semiconductor elements face in the same direction, and that the electrode pads are exposed; a second element group including a plurality of semiconductor elements each having electrode pads arranged along one of outer sides of the semiconductor element, the plurality of semiconductor elements being layered stepwise on the first element group in a way that pad arrangement sides of the semiconductor elements face in the same direction as that of the first element group, and that the electrode pads are exposed, the second element group being disposed to be offset from the first element group in an arrangement direction of the electrode pads; metallic wires for electrically connecting the electrode pads of the plurality of semiconductor elements included in the first and second element groups to the connection pads of the wiring board; and a sealing resin layer formed on the wiring board so as to seal the first and second element groups together with the metallic wires.

    摘要翻译: 半导体存储器件包括:布线板,包括元件安装部分和连接焊盘; 包括多个半导体元件的第一元件组,每个半导体元件具有沿着所述半导体元件的一个外侧布置的电极焊盘,所述多个半导体元件以所述布线板的元件安装部分的方式逐层地分层, 半导体元件面向相同方向,电极焊盘露出; 包括多个半导体元件的第二元件组,每个半导体元件具有沿着所述半导体元件的一个外侧布置的电极焊盘,所述多个半导体元件以半导体元件的衬垫布置面朝向所述第一元件组逐级分层 在与第一元件组相同的方向上,并且电极焊盘被暴露,第二元件组被设置为沿着电极焊盘的布置方向偏离第一元件组; 金属线,用于将包括在第一和第二元件组中的多个半导体元件的电极焊盘电连接到布线板的连接焊盘; 以及密封树脂层,其形成在所述布线板上,以与所述金属线一起密封所述第一和第二元件组。

    SEMICONDUCTOR MEMORY DEVICE
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE 失效
    半导体存储器件

    公开(公告)号:US20110254175A1

    公开(公告)日:2011-10-20

    申请号:US13172571

    申请日:2011-06-29

    IPC分类号: H01L23/48

    摘要: A semiconductor memory device includes: a wiring board including an element mounting portion and connection pads; a first element group including a plurality of semiconductor elements each having electrode pads arranged along one of outer sides of the semiconductor element, the plurality of semiconductor elements being layered stepwise on the element mounting portion of the wiring board in a way that pad arrangement sides of the semiconductor elements face in the same direction, and that the electrode pads are exposed; a second element group including a plurality of semiconductor elements each having electrode pads arranged along one of outer sides of the semiconductor element, the plurality of semiconductor elements being layered stepwise on the first element group in a way that pad arrangement sides of the semiconductor elements face in the same direction as that of the first element group, and that the electrode pads are exposed, the second element group being disposed to be offset from the first element group in an arrangement direction of the electrode pads;metallic wires for electrically connecting the electrode pads of the plurality of semiconductor elements included in the first and second element groups to the connection pads of the wiring board; and a sealing resin layer formed on the wiring board so as to seal the first and second element groups together with the metallic wires.

    摘要翻译: 半导体存储器件包括:布线板,包括元件安装部分和连接焊盘; 包括多个半导体元件的第一元件组,每个半导体元件具有沿着所述半导体元件的一个外侧布置的电极焊盘,所述多个半导体元件以所述布线板的元件安装部分的方式逐层地分层, 半导体元件面向相同方向,电极焊盘露出; 包括多个半导体元件的第二元件组,每个半导体元件具有沿着所述半导体元件的一个外侧布置的电极焊盘,所述多个半导体元件以半导体元件的衬垫布置面朝向所述第一元件组逐级分层 在与第一元件组相同的方向上,并且电极焊盘被暴露,第二元件组被设置为沿着电极焊盘的布置方向偏离第一元件组; 用于将包括在第一和第二元件组中的多个半导体元件的电极焊盘电连接到布线板的连接焊盘的金属线; 以及密封树脂层,其形成在所述布线板上,以与所述金属线一起密封所述第一和第二元件组。