Abstract:
The present invention is to provide an hermetic-sealing package member including a substrate and at least one frame-like sealing material for defining a sealing region formed on the substrate, in which the sealing material is formed of a sintered body obtained by sintering at least one metal powder selected from gold, silver, palladium, or platinum having a purity of 99.9 wt % or greater and an average particle size of 0.005 μm to 1.0 μm, and with respect to an arbitrary cross-section toward an outside from the sealing region, a length of an upper end of the sealing material is shorter than a length of a lower end. Examples of a cross-sectional shape of the sealing material may include one formed to have a base portion having a certain height and at least one mountain portion protruding from the base portion or one formed to have a mountain portion having substantially a triangular shape in which the length of the lower end of the sealing material is a bottom. By use of the hermetic-sealing package member of the present invention, a load is reduced at the time of hermetic-sealing and a sufficient sealing effect can be obtained.
Abstract:
A transfer substrate for transferring a metal wiring material to a transfer target including a substrate, at least one metal wiring material formed on the substrate, at least one coating layer formed on a surface of the metal wiring material, and an underlying metal film formed between the substrate and the metal wiring material, in which the metal wiring material is a compact formed by sintering metal powder such as gold powder having a purity of 99.9 wt % or more and an average particle size of 0.01 μm to 1.0 μm, and the coating layer is a predetermined metal such as gold or an alloy having a different composition from that of the metal wiring material and has a total thickness of 1 μm or less, and the metal underlying film is made of a predetermined metal such as gold or an alloy. The transfer substrate can lower heating temperature on the transfer target side.
Abstract:
The present invention relates to a package production method includes the step of superposing a pair of substrates on each other, and bonding the substrates to each other to hermetically seal the inside of a sealing region surrounded by a sealing material, which is formed on any of the substrates. The sealing material is formed of a sintered body obtained by sintering a metal powder of at least one selected from gold, silver, palladium and platinum, the metal powder having a purity of 99.9% by weight or more and an average particle size of 0.005 μm to 1.0 μm, at least one core material having a width smaller than the width of the sealing material in a cross-sectional shape, and protruding from the periphery is formed on the substrate, and the core material compresses the sealing material to exhibit a sealing effect when the pair of substrates are bonded to each other. Accordingly, a sufficient sealing effect can be exhibited while a pressuring force to the substrate is reduced.
Abstract:
A sealing structure including: a set of base members forming a sealed space; a through-hole which is formed in at least one of the base members, and communicates with the sealed space; and a sealing member that seals the through-hole. An underlying metal film including a bulk-like metal such as gold is provided on a surface of the base member provided with the through-hole. The sealing member seals the through-hole while being bonded to the underlying metal film, and includes: a sealing material which is bonded to the underlying metal film, and includes a compressed product of a metal powder of gold or the like, the metal powder having a purity of 99.9% by mass or more; and a lid-like metal film which is bonded to the sealing material, and includes a bulk-like metal such as gold. Further, the sealing material includes: an outer periphery-side densified region being in contact with an underlying metal film; and a center-side porous region being in contact with the through-hole. The densified region has a porosity of 10% or less in terms of an area ratio at any cross-section.
Abstract:
A bonding method in which applied is a prescribed conductive bonding material, which contains a molded article of a metal powder. The metal powder is one or more selected from the group consisting of a gold powder, a silver powder, a platinum powder, and a palladium powder, and has a purity of 99.9% by mass or more, and an average particle size of 0.005 μm to 1.0 μm, and the conductive bonding material has a compressive deformation rate M, represented by the following expression, of 5% or more and 30% or less when compressed with a compression pressure of 5 MPa. [Expression 1] M={(h1−h2)/h1}×100, wherein h1 represents an average thickness of the conductive bonding material before compression, and h2 represents an average thickness of the conductive bonding material after the compression.
Abstract:
A gold powder comprising gold having a purity of 99.9% by mass or more and having an average particle size of 0.01 μm or more and 1.0 μm or less, a content of a chloride ion is 100 ppm or less, and a content of a cyanide ion is 10 ppm or more and 1000 ppm or less. A total of the content of a chloride ion and the content of a cyanide ion is preferably 110 ppm or more and 1000 ppm or less. The gold powder has improved adaptability to various processes including bonding or the like with a content of a chloride ion, that is, an impurity, optimized. A gold paste using this gold powder is suitably used in various uses for bonding such as die bonding of a semiconductor chip, sealing a semiconductor package, and forming an electrode/wire.
Abstract:
A transfer substrate for transferring a metal wiring material to a transfer target including a substrate, at least one metal wiring material formed on the substrate, at least one coating layer formed on a surface of the metal wiring material, and an underlying metal film formed between the substrate and the metal wiring material, in which the metal wiring material is a compact formed by sintering metal powder such as gold powder having a purity of 99.9 wt % or more and an average particle size of 0.01 μm to 1.0 μm, and the coating layer is a predetermined metal such as gold or an alloy having a different composition from that of the metal wiring material and has a total thickness of 1 μm or less, and the metal underlying film is made of a predetermined metal such as gold or an alloy. The transfer substrate can lower heating temperature on the transfer target side.
Abstract:
The present invention provides a conductive paste for die bonding comprising a metal powder and an organic solvent, the metal powder comprising: one or more metal particles selected from a silver powder, a palladium powder, and a copper powder, the metal particles having a purity of 99.9% by mass or higher and an average particle size of 0.01 μm to 1.0 μm; and a coating layer made of gold covering at least part of the metal particles. The conductive paste according to the present invention can suppress the occurrence of defects such as voids in a bonded part when a semiconductor element or the like is die-bonded to a substrate.