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    Anticorrosive treating concentrate
    4.
    发明授权
    Anticorrosive treating concentrate 有权
    防腐处理浓缩液

    公开(公告)号：US07186354B2

    公开(公告)日：2007-03-06

    申请号：US09797587

    申请日：2001-03-05

    申请人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Masayuki Takashima

    发明人： Hidemitsu Aoki ,  Hiroaki Tomimori ,  Masayuki Takashima

    IPC分类号： C09K3/00 ,  C23F11/00

    CPC分类号： H01L21/02071 ,  C23G1/26 ,  H01L21/32134

    摘要： According to the present invention, there is provided an anticorrosive treating concentrate usable for an exposed surface of a metal (e.g. copper or a copper alloy), containing an anticorrosive agent and a precipitation inhibitor and having a pH of 4 to 12 when used in the form of an aqueous solution, in which concentrate the anticorrosive agent is a triazole type compound and/or a derivative thereof and is contained in a concentration of 0.05 to 20% by weight and the precipitation inhibitor is a compound having at least one nitrogen atom but no metal atom in the molecule.

    摘要翻译： 根据本发明，提供了一种用于金属（例如铜或铜合金）的暴露表面的防腐蚀处理浓缩物，其含有防腐剂和沉淀抑制剂，并且当用于 形式的水溶液，其中防腐剂为三唑型化合物和/或其衍生物，浓度为0.05〜20重量％，沉淀抑制剂为具有至少一个氮原子的化合物，但为 分子中没有金属原子。

    Cleaning solution for semiconductor substrate
    5.
    发明授权
    Cleaning solution for semiconductor substrate 失效
    半导体衬底清洗液

    公开(公告)号：US07312186B2

    公开(公告)日：2007-12-25

    申请号：US10750971

    申请日：2004-01-05

    申请人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

    发明人： Masayuki Takashima ,  Yoshiko Kasama ,  Hiroaki Tomimori ,  Hidemitsu Aoki

    IPC分类号： C11D1/72 ,  C11D1/722 ,  C11D7/08 ,  C11D9/22

    CPC分类号： H01L21/02074 ,  C11D1/722 ,  C11D3/2086 ,  C11D3/2093 ,  C11D3/33 ,  C11D3/361 ,  C11D11/0047 ,  H01L21/02065

    摘要： A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator: CH3—(CH2)l—O—(CmH2mO)n—X   (1) wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group; CH3—(CH2)a—O—(CbH2bO)d—(CxH2xO)y—X   (2) wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

    摘要翻译： 一种用于半导体衬底的清洁溶液，其包含式（1）和/或式（2）的非离子表面活性剂，螯合剂和螯合促进剂：<？in-line-formula description =“In-Line Formulas” 结束=“铅”→CH 3 - （CH 2） ＆lt; 2m＆lt; O＆lt; n＆gt; -X（1）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中l，m和 n独立地表示正数，X表示氢原子或烃基; <？in-line-formula description =“In-line Formulas”end =“lead”？> CH 3 - （CH 2） > - （C b H 2b）O - （C x H 2 H 2） 其中a，b，d，x和y分别代表一个或多个，其中a，b，d，x和y 独立地表示正数，b和x不同，X表示氢原子或烃基。

    Method of forming a high-k film on a semiconductor device
    8.
    发明授权
    Method of forming a high-k film on a semiconductor device 有权
    在半导体器件上形成高k膜的方法

    公开(公告)号：US07192835B2

    公开(公告)日：2007-03-20

    申请号：US10854306

    申请日：2004-05-27

    申请人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    发明人： Hiroaki Tomimori ,  Hidemitsu Aoki ,  Toshiyuki Iwamoto

    IPC分类号： H01L21/302 ,  H01L21/336

    CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31111 ,  H01L28/40 ,  H01L29/511 ,  H01L29/517 ,  H01L29/518

    摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.

    摘要翻译： 根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。 通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。 此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。 对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。 蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

    Semiconductor washing solution and method of producing semiconductor device using the same
    10.
    发明授权
    Semiconductor washing solution and method of producing semiconductor device using the same 失效
    半导体洗涤液及其制造方法

    公开(公告)号：US07141121B2

    公开(公告)日：2006-11-28

    申请号：US10440762

    申请日：2003-05-19

    申请人： Hidemitsu Aoki

    发明人： Hidemitsu Aoki

    IPC分类号： B08B3/08 ,  B08B3/12

    CPC分类号： C11D11/0047 ,  C11D3/2075 ,  C11D3/3947 ,  C11D7/06 ,  H01L21/02063

    摘要： The invention provides a semiconductor washing solution which can suppress occurrence of variation of the shape of a semiconductor device when the semiconductor device is washed and can maintain a stabilized washing capacity for a long period of time. An organic acid ammonium salt is added to a mixed solution of ammonium hydroxide, hydrogen peroxide and water (NH4OH:H2O2:H2O) to prepare the semiconductor washing solution. The organic acid ammonium salt to be added is one or more selected from ammonium acetate, ammonium citrate, ammonium formate and ammonium oxalate. The concentration of the added organic acid ammonium salt ranges from 0.1 mol/l to 20 mol/l.

    摘要翻译： 本发明提供一种半导体洗涤液，其可以抑制半导体器件洗涤时半导体器件的形状的变化，并能够长期保持稳定的洗涤能力。 将有机酸铵盐加入到氢氧化铵，过氧化氢和水的混合溶液中（NH 3 OH:H 2 O 2）： H 2 O）以制备半导体洗涤溶液。 待加入的有机酸铵盐是选自乙酸铵，柠檬酸铵，甲酸铵和草酸铵中的一种或多种。 加入的有机酸铵盐的浓度为0.1mol / l至20mol / l。