摘要:
An apparatus for controlling automatic stop/restart of an engine, includes: an automatic-stop/restart-control-unit which stops/restarts the engine; a brake-pressure-detection-unit which detects brake pressure in a brake system and controls the brake pressure to perform anti-skid control; a first-determination-unit which determines whether the brake pressure is not less than a first-threshold; a second-determination-unit which determines whether the brake pressure is not less than a second-threshold larger than the-first threshold; a stop-allowing-unit which allows the automatic-stop/restart-control-unit to stop the engine while the engine operates, when the first-determination-unit determines that the brake pressure is not less than the first-threshold and the second-determination-unit determines that the brake pressure is less than the second-threshold; and a stop-inhibiting-unit which inhibits the automatic-stop/restart-control-unit from stopping the engine while the engine operates, when the-first-determination-unit determines that the brake pressure is less than the first-threshold and the second-determination-unit determines that the brake pressure is not less than the second-threshold.
摘要:
A vehicle control apparatus includes: an automatic-stop-and-restart-control-unit stopping/restarting an engine, a brake-fluid-pressure-control-unit controlling wheel-cylinder-pressure using a brake-system, which intensifies brake-manipulation-force by a brake-booster to cause master-cylinder-pressure in a master-cylinder while the engine operates, and which transfers the master-cylinder-pressure to wheel-cylinders to cause the wheel-cylinder-pressure, the brake-system including an actuator automatically increasing pressure in the wheel-cylinders irrespective of the brake-manipulation-force; a negative-pressure-detection-unit which detects the vacuum-pressure; a first-determination-unit which determines whether the vacuum-pressure is not more than a first threshold while the engine stops, a restarting-unit which allows the automatic-stop-and-restart-control-unit to restart the engine when the first-determination-unit determines that the vacuum-pressure is not more than the first threshold; a second-determination-unit which determines whether the vacuum-pressure is not more than a second threshold; and a braking-boost-unit which allows the brake-fluid-pressure-control-unit to automatically increase the pressure in the wheel-cylinders when the second-determination-unit determines that the vacuum-pressure is not more than the second threshold.
摘要:
A gallium nitride crystal having a hexagonal crystal structure, wherein a full width at half maximum (FWHM) of X-ray rocking curve in a region at a side of one edge in a c-axis direction is smaller than the FWHM in a region at a side of the other edge in the c-axis direction, in at least one of m-plane outer peripheral surfaces of the hexagonal crystal structure.
摘要:
A method for producing a gallium nitride crystal includes growing a gallium nitride crystal 5 by dissolving nitrogen in a mixed melt including gallium and sodium, and collecting the gallium 55 separated from an alloy 51 including the gallium and the sodium by reacting the alloy 51 and a liquid 52 that ionizes the sodium and separating sodium ions and the gallium 55 from the alloy.
摘要:
A method of manufacturing a group 13 nitride crystal includes a crystal growth process to form the group 13 nitride crystal by growing the group 13 nitride crystal having a hexagonal crystal structure from a seed crystal which is a gallium nitride crystal having a hexagonal crystal structure in which a length “L” in a c-axis direction is 9.7 mm or more, and a ratio L/d of the length “L” to a crystal diameter “d” in a c-plane is larger than 0.813. The crystal growth process includes a process of forming an outer periphery containing a {10-10} plane and an outer periphery containing a {10-11} plane at side surfaces of the group 13 nitride crystal, and forming an outer periphery containing a {0001} plane at a bottom surface of the group 13 nitride crystal.
摘要:
In a method for manufacturing a group 13 nitride crystal, a seed crystal made of a group 13 nitride crystal is arranged in a mixed melt containing an alkali metal and a group 13 element, and nitrogen is supplied to the mixed melt to grow the group 13 nitride crystal on a principal plane of the seed crystal. The seed crystal is manufactured by vapor phase epitaxy. At least a part of contact members coming into contact with the mixed melt in a reaction vessel accommodating the mixed melt is made of Al2O3. An interface layer having a photoluminescence emission peak whose wavelength is longer than the wavelength of a photoluminescence emission peak of the grown group 13 nitride crystal is formed between the seed crystal and the grown group nitride crystal.
摘要翻译:在13族氮化物晶体的制造方法中,将由13族氮化物晶体构成的晶种配置在含有碱金属和13族元素的混合熔体中,向混合熔体供给氮以使第13族生长 氮化物晶体在晶种的主平面上。 晶种通过气相外延制造。 在容纳混合熔体的反应容器中与接触构件接触的至少一部分由Al 2 O 3制成。 在晶种和生长氮化物晶体之间形成有具有比生长组13氮化物晶体的发光发光峰的波长长的光致发光峰的界面层。
摘要:
A method is for manufacturing a group 13 nitride crystal by a flux method. The method includes: placing a seed crystal and a mixed melt that contains an alkali metal or an alkali-earth metal and a group 13 element in a reaction vessel; and rotating the reaction vessel to stir the mixed melt. The reaction vessel includes a structure to stir the mixed melt. More than one seed crystals are installed point-symmetrically with respect to a central axis of the reaction vessel at positions other than the central axis such that a c plane of each of the seed crystals is substantially parallel to a bottom of the reaction vessel. The structure is installed point-symmetrically with respect to the central axis at at least part of the reaction vessel other than the central axis.
摘要:
An apparatus is used for manufacturing a group 13 nitride crystal by using a flux method. The apparatus includes a reaction vessel, a rotational mechanism, and a structure. The reaction vessel contains a mixed melt and a seed crystal placed in the mixed melt. The mixed melt contains an alkali metal or an alkali-earth metal and a group 13 element. The rotational mechanism rotates the reaction vessel. The structure is provided inside the reaction vessel for stirring the mixed melt and is constructed such that a height of a first portion of the structure close to an inner wall of the reaction vessel is higher than a height of a second portion of the structure close to a center of the reaction vessel.
摘要:
A group 13 nitride crystal having a hexagonal crystal structure and containing at least a nitrogen atom and at least a metal atom selected from a group consisting of B, Al, Ga, In, and Tl. The group 13 nitride crystal includes a first region disposed on an inner side in a cross section intersecting c-axis, a third region disposed on an outermost side in the cross section and having a crystal property different from that of the first region, and a second region disposed at least partially between the first region and the third region in the cross section, the second region being a transition region of a crystal growth and having a crystal property different from that of the first region and that of the third region.
摘要:
A large sized bulk crystal is produced which allows to cut out a practical size of crystal substrate. The gallium nitride crystal has features in which a length L of c-axis is 9 mm or more, a crystal diameter d of a cross section orthogonal to the c-axis is 100 μm, and a ratio L/d of the length L of the c-axis and the crystal diameter d of the cross section orthogonal to the c-axis is 7 or more. By enlarging this elongated needle-like crystal, a bulk crystal with a large volume can be produced, and a large sized bulk crystal can be produced which allows to cut out a practical size of crystal substrate.