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35 条记录 (耗时 0.03 秒)

    Semiconductor device
    4.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07732868B2

    公开(公告)日：2010-06-08

    申请号：US10521941

    申请日：2002-11-28

    申请人： Tetsuro Asano ,  Mikito Sakakibara ,  Toshikazu Hirai

    发明人： Tetsuro Asano ,  Mikito Sakakibara ,  Toshikazu Hirai

    IPC分类号： H01L29/812

    CPC分类号： H01L29/812 ,  H01L27/0248 ,  H01L27/0255 ,  H01L29/808

    摘要： A protecting element, comprising a first n+-type region, an insulating region, and a second n+-type region, is connected in parallel between two terminals of an FET. Since discharge across the first and second n+ regions is enabled, electrostatic energy that reaches the operating region of the FET can be attenuated without increasing the parasitic capacitance.

    摘要翻译： 在FET的两个端子之间并联连接包括第一n +型区域，绝缘区域和第二n +型区域的保护元件。 由于能够使第一和第二n +区域的放电得以实现，所以到达FET工作区域的静电能量可以衰减而不增加寄生电容。

    Compound semiconductor switching circuit device
    5.
    发明授权
    Compound semiconductor switching circuit device 有权
    复合半导体开关电路器件

    公开(公告)号：US07358788B2

    公开(公告)日：2008-04-15

    申请号：US11412077

    申请日：2006-04-27

    申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

    发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara ,  Hidetoshi Ishihara

    IPC分类号： H03K5/08

    CPC分类号： H01L29/7785 ,  H01L21/8252 ,  H01L27/0266 ,  H01L27/0605

    摘要： Protecting elements are respectively connected between a control terminal Ctl and a ground terminal GND of a logic circuit L, between a point Cp and a ground terminal GND, and between a power supply terminal VDD and a ground terminal GND thereof. With this, an E-FET, constituting an inverter 70, and capacitors Ci and Cr can be protected from electrostatic breakdown due to external static electricity. Since the protecting element can be constituted by requisite components for the logic circuit, an additional step or structure is not especially required to provide the protecting element.

    摘要翻译： 保护元件分别连接在控制端子Ct1和逻辑电路L的接地端子GND之间，位于点Cp和接地端子GND之间，以及电源端子V DD端子和接地端子 GND。 由此，可以防止构成反相器70的电子FET，电容器Ci，Cr由于外部静电而受到静电破坏。 由于保护元件可以由用于逻辑电路的必需部件构成，所以不需要额外的步骤或结构来提供保护元件。

    Compound semiconductor device
    6.
    发明申请
    Compound semiconductor device 有权
    复合半导体器件

    公开(公告)号：US20060289963A1

    公开(公告)日：2006-12-28

    申请号：US11442600

    申请日：2006-05-30

    申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

    发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

    IPC分类号： H01L29/00

    CPC分类号： H01L27/0605 ,  H01L29/402 ,  H01L29/737 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812

    摘要： A separation element formed of one of a conduction region and a metal layer is placed between two elements in proximity to each other. The separation element is connected to a high resistance element and to a direct current terminal pad. A connection route extending from the direct current terminal pad to the separation element is a route in which a potential does not vibrate with high frequency. This results in a placement of a high frequency GND potential between the two elements, at least one of which is subjected to transmitting the high frequency signals, whereby leak of the high frequency signals can be prevented between the two elements.

    摘要翻译： 由导电区域和金属层之一形成的分离元件彼此靠近放置在两个元件之间。 分离元件连接到高电阻元件和直流端子焊盘。 从直流端子焊盘延伸到分离元件的连接路径是电位不以高频率振动的路径。 这导致在两个元件之间放置高频GND电位，其中至少一个被传送高频信号，从而可以防止两个元件之间的高频信号泄漏。

    Semiconductor switching device
    9.
    发明授权
    Semiconductor switching device 有权

    公开(公告)号：US06573529B2

    公开(公告)日：2003-06-03

    申请号：US10152880

    申请日：2002-05-24

    申请人： Tetsuro Asano ,  Toshikazu Hirai ,  Mikito Sakakibara

    发明人： Tetsuro Asano ,  Toshikazu Hirai ,  Mikito Sakakibara

    IPC分类号： H01L2906

    CPC分类号： H01L27/0605

    摘要： A semiconductor switching device includes two FETs with different device characteristics, a common input terminal, and two output terminals. A signal transmitting FET has a gate width of 500 &mgr;m and a signal receiving FET has a gate width of 400 &mgr;m. A resistor connecting a gate electrode and a control terminal of the signal transmitting FET is tightly configured to provide expanding space for the FET. Despite the reduced size, the switching device can allow a maximum power of 22.5 dBm to pass through because of the asymmetrical device design. The switching device operates at frequencies of 2.4 GHz or higher without use of shunt FET.

    Compound semiconductor device
    10.
    发明授权
    Compound semiconductor device 有权
    复合半导体器件

    公开(公告)号：US07701032B2

    公开(公告)日：2010-04-20

    申请号：US11442600

    申请日：2006-05-30

    申请人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

    发明人： Tetsuro Asano ,  Yuichi Kusaka ,  Mikito Sakakibara

    IPC分类号： H01L29/80

    CPC分类号： H01L27/0605 ,  H01L29/402 ,  H01L29/737 ,  H01L29/778 ,  H01L29/808 ,  H01L29/812

    摘要： A separation element formed of one of a conduction region and a metal layer is placed between two elements in proximity to each other. The separation element is connected to a high resistance element and to a direct current terminal pad. A connection route extending from the direct current terminal pad to the separation element is a route in which a potential does not vibrate with high frequency. This results in a placement of a high frequency GND potential between the two elements, at least one of which is subjected to transmitting the high frequency signals, whereby leak of the high frequency signals can be prevented between the two elements.

    摘要翻译： 由导电区域和金属层之一形成的分离元件彼此靠近放置在两个元件之间。 分离元件连接到高电阻元件和直流端子焊盘。 从直流端子焊盘延伸到分离元件的连接路径是电位不以高频率振动的路径。 这导致在两个元件之间放置高频GND电位，其中至少一个被传送高频信号，从而可以防止两个元件之间的高频信号泄漏。