公开(公告)号：US6165846A

公开(公告)日：2000-12-26

申请号：US260913

申请日：1999-03-02

申请人： Timothy K. Carns ,  John A. Smythe, III ,  John A. Ransom ,  Bernice L. Kickel ,  John E. Berg

发明人： Timothy K. Carns ,  John A. Smythe, III ,  John A. Ransom ,  Bernice L. Kickel ,  John E. Berg

IPC分类号： H01L21/28 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/51 ,  H01L21/336

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L29/518

摘要： The improvement of thin tunnel oxides used in EEPROM and FLASH tecnologies using post-oxidation annealing in nitrogen causes defects in subsequent oxide films. These are manifested by oxide thinning at the bird's beak and result in high gate leakage. As the time and temperature to the post-oxidation annealing are increased for improved tunnel oxide performance, the number of defects increases rapidly. A method of realizing the improved tunnel oxide Q.sub.BD using higher post-oxidation time and temperature annealing while at the same time not degrading the quality of subsequent gate oxides is shown. The use of sacrificial oxidation and strip just prior to the transistor gate oxidation is described. This process removes the additional nitride which exists at the field edges, leading to the oxide thinning. As a result, improved tunnel oxide integrity can be achieved without degradation of high and low voltage transistors.

摘要翻译： 用于EEPROM和FLASH技术的薄隧道氧化物的改进使用氮中的后氧化退火在随后的氧化膜中引起缺陷。 这些表现为鸟喙处的氧化物变薄，导致高漏电。 随着后氧化退火的时间和温度增加，隧道氧化物性能的提高，缺陷数量迅速增加。 示出了使用更高的后氧化时间和温度退火实现改进的隧道氧化物QBD的方法，同时不降低随后的栅极氧化物的质量。 描述了在晶体管栅极氧化之前使用牺牲氧化和条带。 该工艺除去存在于场边缘的附加氮化物，导致氧化物变薄。 结果，可以在不降低高压和低压晶体管的情况下实现改进的隧道氧化物完整性。

公开(公告)号：US06190973B1

公开(公告)日：2001-02-20

申请号：US09215797

申请日：1998-12-18

申请人： John E. Berg ,  Bernice L. Kickel ,  John A. Smythe, III

发明人： John E. Berg ,  Bernice L. Kickel ,  John A. Smythe, III

IPC分类号： H01L218234

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/28273 ,  H01L29/42368 ,  H01L29/518

摘要： The present invention provides a method of forming a high quality thin oxide on a semiconductor body. A sacrificial oxide is formed on the semiconductor and then etched to eliminate the surface contamination of the semiconductor body. Then, an EEPROM oxide is formed following by an arsenic implant. Next the EEPROM oxide on the semiconductor body is then prepared by thin oxide growth. The thin oxide is preferably formed in a steam ambient. Subsequently, the oxide is annealed under nitrous oxide ambient using a combination of in-situ and RTP annealing process.

摘要翻译： 本发明提供了在半导体本体上形成高品质薄氧化物的方法。 在半导体上形成牺牲氧化物，然后蚀刻以消除半导体本体的表面污染。 然后，通过砷注入形成EEPROM氧化物。 接下来，通过薄氧化物生长制备半导体本体上的EEPROM氧化物。 薄氧化物优选在蒸汽环境中形成。 随后，使用原位和RTP退火工艺的组合，氧化物在一氧化二氮环境下进行退火。

公开(公告)号：US06476635B1

公开(公告)日：2002-11-05

申请号：US09604992

申请日：2000-06-28

申请人： Irfan Rahim ,  John E. Berg

发明人： Irfan Rahim ,  John E. Berg

IPC分类号： H03K19177

CPC分类号： H03K19/17748 ,  H03K19/1778 ,  H03K19/17792

摘要： A layout architecture for a programmable logic device comprising one or more adjacent metal lines, a first circuit, and a second circuit. The one or more adjacent metal lines may each comprise a critical path. The first circuit may be configured to present an input signal to each of the one or more adjacent metal lines in response to a configuration signal. The second circuit may be configured to (i) receive a signal from at least one of the one or more adjacent metal lines selected in response to the configuration signal and (ii) generate an output signal in response to the received signal.

摘要翻译： 一种用于包括一个或多个相邻金属线，第一电路和第二电路的可编程逻辑器件的布局架构。 一个或多个相邻的金属线可以各自包括关键路径。 第一电路可以被配置为响应于配置信号向一个或多个相邻金属线中的每一个呈现输入信号。 第二电路可以被配置为（i）从响应于配置信号选择的一个或多个相邻金属线中的至少一个接收信号，以及（ii）响应于接收到的信号产生输出信号。

公开(公告)号：US4824803A

公开(公告)日：1989-04-25

申请号：US064501

申请日：1987-06-22

申请人： Natasha Us ,  Bonggi Kim ,  John E. Berg

发明人： Natasha Us ,  Bonggi Kim ,  John E. Berg

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L23/53223 ,  H01L21/76886 ,  H01L2924/0002

摘要： Metal contacts and interconnections for semiconductor integrated circuits are fabricated through the deposition of a sandwich structure of metal. The bottom layer of a refractory metal prevents aluminum spiking into silicon; the top layer of refractory metal or alloy serves to reduce hillocking of the middle layer of conductive material. The upper layer of refractory metal at the location of the contact pads is etched off to improve bonding during packaging.

摘要翻译： 用于半导体集成电路的金属触点和互连通过沉积金属夹层结构来制造。 难熔金属的底层防止铝掺入硅中; 难熔金属或合金的顶层用于减少中间层导电材料的小丘。 蚀刻掉接触垫位置处的难熔金属上层，以改善包装过程中的粘结。

公开(公告)号：US08913402B1

公开(公告)日：2014-12-16

申请号：US13112450

申请日：2011-05-20

申请人： John E. Berg ,  Douglas R. Hackler, Sr.

发明人： John E. Berg ,  Douglas R. Hackler, Sr.

IPC分类号： H05K1/11 ,  H05K7/00 ,  H05K1/18 ,  H05K1/00

CPC分类号： H05K7/1061 ,  B81C1/00238 ,  B81C2203/0792 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/5228 ,  H01L24/06 ,  H01L24/16 ,  H01L24/17 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2224/03002 ,  H01L2224/0401 ,  H01L2224/05567 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/16147 ,  H01L2224/17181 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/1461 ,  H01L2924/157 ,  H01L2924/15787

摘要： This interposer provides interconnections between stacked layers of circuits, which may include integrated circuits, PC boards, and hybrid substrates. Fabricated as an integrated circuit itself using readily available process steps, this interposer uses single and dual-damascene layers to increase the density of usable interconnections on both its top and bottom surfaces. Access from a top surface to a bottom surface is provided by conductive through-vias that may be placed at a high density. For even greater density, interconnections may be routed within silicon trenches, while damascene processing reduces the total number of steps required for fabrication. The described techniques may be used to create double-sided integrated circuits.

摘要翻译： 该插入器提供堆叠的电路层之间的互连，其可以包括集成电路，PC板和混合基板。 该插入器使用易于获得的工艺步骤作为集成电路本身，使用单镶嵌层和双镶嵌层来增加其顶表面和底表面上的可用互连的密度。 从顶表面到底表面的访问由可以高密度放置的导电通孔提供。 对于更大的密度，互连可以在硅沟槽内布线，而镶嵌处理减少了制造所需的步骤总数。 所描述的技术可以用于创建双面集成电路。

公开(公告)号：US5353720A

公开(公告)日：1994-10-11

申请号：US77379

申请日：1993-06-17

申请人： John E. Berg

发明人： John E. Berg

IPC分类号： F23G5/04 ,  F23G5/08 ,  F23G5/46 ,  F23M5/08 ,  F23M5/06

CPC分类号： F23G5/46 ,  F23G5/04 ,  F23G5/08 ,  F23M5/08 ,  F23C2900/9901 ,  F23G2201/80 ,  F23G2203/60 ,  F23G2205/121 ,  F23L2900/07005 ,  Y02E20/12 ,  Y02E20/344

摘要： An incinerator (200)is provided for burning combustible refuse (16) in a primary combustion chamber (2) that has an outlet (50) for exhaust heat (30) and an inlet (28) for receiving refuse (16) and an inlet (36) for receiving a mixture of pressurized oxygen and pressurized hydrogen at respective rates correlated to create a burn temperature within chamber (2) of at least 4000.degree. F. to provide exhaust heat that is more environmentally acceptable.

摘要翻译： 提供了一种焚烧炉（200），用于在主燃烧室（2）中燃烧可燃垃圾（16），该主燃烧室具有用于排热的出口（50）和用于接收垃圾的入口（28）和一个入口 （36），用于以相关的速率接收加压氧气和加压氢气的混合物，以产生至少4000°F的室（2）内的燃烧温度，以提供更环境可接受的排气热。

公开(公告)号：US07943464B2

公开(公告)日：2011-05-17

申请号：US12554647

申请日：2009-09-04

申请人： John E. Berg ,  Claude L. Bertin ,  Thomas Rueckes

发明人： John E. Berg ,  Claude L. Bertin ,  Thomas Rueckes

IPC分类号： H01L21/336

CPC分类号： B82Y10/00 ,  G11C8/10 ,  G11C11/412 ,  G11C11/54 ,  G11C13/025 ,  G11C16/0416 ,  G11C23/00 ,  H01L27/115 ,  Y10S977/733

摘要： Non-volatile field effect devices and circuits using same. A non-volatile field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. Each of the source, drain, and gate have a corresponding terminal. An electromechanically-deflectable, nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal. The others of the source, drain and gate are directly connected to their corresponding terminals. The nanotube switching element is electromechanically-deflectable in response to electrical stimulation at two control terminals to create one of a non-volatile open and non-volatile closed electrical communication state between the one of the source, drain and gate and its corresponding terminal.

摘要翻译： 非易失性场效应器件和使用它的电路。 非易失性场效应器件包括在源极和漏极之间具有场可调通道的源极，漏极和栅极。 源极，漏极和栅极中的每一个都具有相应的端子。 电气可偏转的纳米管开关元件电气地定位在源极，漏极和栅极之一及其对应的端子之间。 源极，漏极和栅极中的其他物体直接连接到其相应的端子。 纳米管开关元件响应于在两个控制端子处的电刺激而机电可偏转以产生源极，漏极和栅极之一与其相应的端子之间的非易失性开放和非易失性闭合电连通状态之一。

公开(公告)号：US06436195B1

公开(公告)日：2002-08-20

申请号：US09643777

申请日：2000-08-22

申请人： John A. Smythe ,  John E. Berg

发明人： John A. Smythe ,  John E. Berg

IPC分类号： C23C1600

CPC分类号： H01L21/02274 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3003 ,  H01L21/31625 ,  H01L21/76801

摘要： Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.

摘要翻译： 沉积的用于半导体器件的电介质层通常在化学气相沉积中形成。 通常形成氢副产物。 特别是在等离子体增强化学气相沉积工艺中，氢副产物可以形成引入电介质层的自由基。 氢自由基可以影响MOSFET晶体管的阈值和击穿电压的稳定性。 引入CVD室的氘与氢气竞争进入电介质层。 氘可防止一些氢自由基进入电介质层，从而提高MOSFET的可靠性。

公开(公告)号：US6156653A

公开(公告)日：2000-12-05

申请号：US962828

申请日：1997-11-03

申请人： John A. Smythe ,  John E. Berg

发明人： John A. Smythe ,  John E. Berg

IPC分类号： C23C16/40 ,  H01L21/30 ,  H01L21/316 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/02274 ,  C23C16/402 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/3003 ,  H01L21/31625 ,  H01L21/76801

摘要： Deposited dielectric layers for a semiconductor device are typically formed in a chemical vapor deposition. Often a hydrogen by-product is formed. Especially in a plasma enhanced chemical vapor deposition process, the hydrogen by-product can form free radicals that are introduced into the dielectric layers. The hydrogen free radicals can affect the stability of the threshold and breakdown voltage of MOSFET transistors. Deuterium introduced into the CVD chamber competes to enter the dielectric layer with the hydrogen. The deuterium prevents some of the hydrogen free radicals from entering the dielectric layer and thus increases MOSFET reliability.

公开(公告)号：US20090075698A1

公开(公告)日：2009-03-19

申请号：US11855846

申请日：2007-09-14

申请人： Zhimin Ding ,  Richard M. Morley ,  Stephen Johnston ,  Bing Yeh ,  John E. Berg

发明人： Zhimin Ding ,  Richard M. Morley ,  Stephen Johnston ,  Bing Yeh ,  John E. Berg

IPC分类号： H04B1/38

CPC分类号： H04W8/245 ,  H04W48/08 ,  H04W48/18 ,  H04W88/06

摘要： A removable card for use with a mobile wireless communication device has a processor and a non-volatile memory, connected to the processor. The memory has programming code stored configured to be executed by the processor and is operable in one of two modes. In a first mode the card is connected to the device with the card storing information received wirelessly by the device from the Internet. In a second mode the card is connected to a network portal device, which is connected to the Internet, with the card storing information received through the network portal device from the Internet. In another embodiment, the removable card has electrical connections for connecting to a mobile wireless communicating device for use by a user to connect to the Internet. The memory has two portions: a first portion and a second portion with the partitioning being alterable. The processor restricts access to the first portion by the user, while grants access to the second portion to the user. Finally, the present invention relates to a mobile wireless communication device.

摘要翻译： 用于移动无线通信设备的可拆卸卡具有连接到处理器的处理器和非易失性存储器。 存储器具有被配置为由处理器执行并且可以以两种模式之一操作的存储的编程代码。 在第一模式中，卡被连接到设备，其中卡存储由设备从因特网无线地接收到的信息。 在第二模式中，该卡连接到连接到互联网的网络入口设备，其中卡从存储通过网络入口设备从因特网接收的信息。 在另一个实施例中，可拆卸卡具有用于连接到移动无线通信设备的电连接，供用户使用以连接到因特网。 存储器具有两部分：第一部分和第二部分，其中分割是可改变的。 处理器限制用户对第一部分的访问，同时向用户授予对第二部分的访问。 最后，本发明涉及移动无线通信设备。