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    Process for electroless copper deposition on a ruthenium seed
    2.
    发明申请
    Process for electroless copper deposition on a ruthenium seed 审中-公开
    在钌种子上沉积无电镀铜的方法

    公开(公告)号：US20060246699A1

    公开(公告)日：2006-11-02

    申请号：US11385038

    申请日：2006-03-20

    申请人： Timothy Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert Chu ,  Frederick Wu ,  Kavita Shah

    发明人： Timothy Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert Chu ,  Frederick Wu ,  Kavita Shah

    IPC分类号： H01L21/44

    CPC分类号： C23C18/40 ,  C23C18/1608 ,  C23C18/165 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

    摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

    摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

    Process for electroless copper deposition
    3.
    发明申请
    Process for electroless copper deposition 审中-公开
    无电镀铜工艺

    公开(公告)号：US20070099422A1

    公开(公告)日：2007-05-03

    申请号：US11261409

    申请日：2005-10-28

    申请人： Kapila Wijekoon ,  Timothy Weidman ,  Arulkumar Shanmugasundram

    发明人： Kapila Wijekoon ,  Timothy Weidman ,  Arulkumar Shanmugasundram

    IPC分类号： H01L21/44

    CPC分类号： H01L21/288 ,  C23C18/165 ,  C23C18/40 ,  C25D3/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76874 ,  H01L21/76879 ,  H01L2221/1089

    摘要： Embodiments of the invention provide a method for depositing a copper material on a substrate by an electroless deposition process and also provide a composition of an electroless deposition solution. In one embodiment, the copper material is deposited from an electroless copper solution that contains an additive, such as an inhibitor, to promote a bottom-up fill process. In one aspect, the field of the substrate may be maintained free of copper material or substantially free of copper material during the electroless deposition process. Prior to the electroless deposition process for forming the copper material, a barrier layer may be deposited on the substrate, and thereafter, a ruthenium layer may be deposited thereon. In one example, the copper material is formed during a bottom-up, electroless deposition process directly on the ruthenium layer. Alternatively, a seed layer may be formed on the ruthenium layer prior to depositing the copper material.

    摘要翻译： 本发明的实施方案提供了一种通过无电沉积方法将铜材料沉积在基底上并且还提供无电沉积溶液的组合物的方法。 在一个实施例中，铜材料由含有添加剂例如抑制剂的无电解铜溶液沉积以促进自下而上的填充过程。 在一个方面，在无电沉积工艺期间，衬底的场可以保持不含铜材料或基本上不含铜材料。 在用于形成铜材料的无电沉积工艺之前，可以在衬底上沉积阻挡层，之后可以沉积钌层。 在一个实例中，铜材料是在自下而上的无电沉积工艺中直接在钌层上形成的。 或者，可以在沉积铜材料之前在钌层上形成种子层。

    Process for electroless copper deposition
    4.
    发明申请
    Process for electroless copper deposition 有权
    无电镀铜工艺

    公开(公告)号：US20070004201A1

    公开(公告)日：2007-01-04

    申请号：US11385037

    申请日：2006-03-20

    申请人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

    发明人： Dmitry Lubomirsky ,  Timothy Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Kovarsky ,  Kapila Wijekoon

    IPC分类号： H01L21/44

    CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1831 ,  C23C18/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76874

    摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

    摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

    Process for electroless copper deposition
    5.
    发明授权
    Process for electroless copper deposition 有权
    无电镀铜工艺

    公开(公告)号：US07651934B2

    公开(公告)日：2010-01-26

    申请号：US11385037

    申请日：2006-03-20

    申请人： Dmitry Lubomirsky ,  Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Y. Kovarsky ,  Kapila Wijekoon

    发明人： Dmitry Lubomirsky ,  Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Nicolay Y. Kovarsky ,  Kapila Wijekoon

    IPC分类号： H01L21/20 ,  H01L21/3205 ,  H01L21/4763

    CPC分类号： H01L21/288 ,  C23C18/1608 ,  C23C18/165 ,  C23C18/1831 ,  C23C18/38 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76874

    摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

    摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

    PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED
    6.
    发明申请
    PROCESS FOR ELECTROLESS COPPER DEPOSITION ON A RUTHENIUM SEED 审中-公开
    电镀铜沉积方法

    公开(公告)号：US20120315756A1

    公开(公告)日：2012-12-13

    申请号：US13421434

    申请日：2012-03-15

    申请人： Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert S. Chu ,  Frederick C. Wu ,  Kavita Shah

    发明人： Timothy W. Weidman ,  Arulkumar Shanmugasundram ,  Kapila Wijekoon ,  Schubert S. Chu ,  Frederick C. Wu ,  Kavita Shah

    IPC分类号： H01L21/768

    CPC分类号： C23C18/40 ,  C23C18/1608 ,  C23C18/165 ,  H01L21/288 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76874 ,  H01L21/76877

    摘要： Embodiments of the invention provide methods for forming conductive materials within contact features on a substrate by depositing a seed layer within a feature and subsequently filling the feature with a copper-containing material during an electroless deposition process. In one example, a copper electroless deposition solution contains levelers to form convexed or concaved copper surfaces. In another example, a seed layer is selectively deposited on the bottom surface of the aperture while leaving the sidewalls substantially free of the seed material during a collimated PVD process. In another example, the seed layer is conformably deposited by a PVD process and subsequently, a portion of the seed layer and the underlayer are plasma etched to expose an underlying contact surface. In another example, a ruthenium seed layer is formed on an exposed contact surface by an ALD process utilizing the chemical precursor ruthenium tetroxide.

    摘要翻译： 本发明的实施例提供了通过在特征内沉积种子层并随后在无电沉积工艺期间用含铜材料填充该特征而在基底上的接触特征内形成导电材料的方法。 在一个实例中，铜无电解沉积溶液含有形成凸形或凹陷铜表面的矫直机。 在另一个实例中，在准直的PVD工艺期间，将籽晶层选择性地沉积在孔的底表面上，同时留下基本上不含种子材料的侧壁。 在另一个实例中，种子层通过PVD工艺顺应地沉积，随后种子层和底层的一部分被等离子体蚀刻以暴露下面的接触表面。 在另一个实例中，通过使用化学前体四氧化钌的ALD工艺在暴露的接触表面上形成钌籽晶层。

    Temperature control in a chemical mechanical polishing system
    10.
    发明授权
    Temperature control in a chemical mechanical polishing system 有权
    化学机械抛光系统中的温度控制

    公开(公告)号：US07153188B1

    公开(公告)日：2006-12-26

    申请号：US11245558

    申请日：2005-10-07

    申请人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    发明人： Steven M. Zuniga ,  Hung Chih Chen ,  Stan D. Tsai ,  Kapila Wijekoon ,  Fred C. Redeker ,  Rajeev Bajaj

    IPC分类号： B24B49/00

    CPC分类号： B24B37/015

    摘要： The carrier head has a base and a substrate backing structure for holding a substrate against a polishing surface during polishing. The substrate backing structure is connected to the base and includes an external surface that contacts a backside of the substrate during polishing. The substrate backing structure also includes a resistive heating system to distribute heat over an area of the external surface and at least one thermally conductive membrane. The external surface is a first surface of the at least one thermally conductive membrane, and the resistive heating system is integrated within one of the at least one thermally conductive membrane.

    摘要翻译： 承载头具有底座和衬底背衬结构，用于在抛光期间将衬底保持在抛光表面上。 衬底背衬结构连接到基底并且包括在抛光期间接触衬底背面的外表面。 衬底背衬结构还包括电阻加热系统以在外表面的区域和至少一个导热膜上分配热量。 所述外表面是所述至少一个导热膜的第一表面，并且所述电阻加热系统集成在所述至少一个导热膜之一内。