公开(公告)号：US20070114672A1

公开(公告)日：2007-05-24

申请号：US11583850

申请日：2006-10-20

申请人： Tomoko Higashino ,  Hirotaka Nishizawa ,  Tamaki Wada ,  Chuichi Miyazaki

发明人： Tomoko Higashino ,  Hirotaka Nishizawa ,  Tamaki Wada ,  Chuichi Miyazaki

IPC分类号： H01L23/52

CPC分类号： H01L25/0657 ,  H01L24/27 ,  H01L24/45 ,  H01L24/73 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L25/50 ,  H01L2221/68336 ,  H01L2224/05554 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/838 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01084 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512

摘要： The miniaturization of the system in package which laminates a plurality of semiconductor chips on a wiring substrate via a die attach film is promoted. In the system in package (SiP) which laminates memory chips and microcomputer chip via die attach film on wiring substrate, by forming metal plate in the chip mounting region of wiring substrate, and mounting memory chip of an undermost layer on this metal plate, the flatness of the chip mounting region of wiring substrate is secured, and die attach film which intervenes between metal plate and memory chip of an undermost layer is made the same quality as die attach film which intervenes between chips (between memory chips and between memory chip and microcomputer chips), and the same thickness.

摘要翻译： 促进了通过管芯附着膜在布线基板上层叠多个半导体芯片的封装体系的小型化。 在通过在布线基板上通过芯片安装膜层叠存储芯片和微型计算机芯片的系统（SiP）中，通过在布线基板的芯片安装区域中形成金属板，并在该金属板上安装最底层的存储芯片， 确保布线基板的芯片安装区域的平坦度，并且插入介于金属板和最下层的存储芯片之间的管芯附着膜与插入芯片之间的芯片附近的芯片（存储芯片之间以及存储芯片与 微型计算机芯片），厚度相同。

公开(公告)号：US07148081B2

公开(公告)日：2006-12-12

申请号：US10855382

申请日：2004-05-28

申请人： Tomoko Higashino ,  Kazunari Suzuki ,  Chuichi Miyazaki

发明人： Tomoko Higashino ,  Kazunari Suzuki ,  Chuichi Miyazaki

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L23/52 ,  H01L23/48 ,  H01L27/146

CPC分类号： H01L21/6835 ,  H01L23/3128 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L29/0657 ,  H01L2224/05554 ,  H01L2224/26145 ,  H01L2224/27013 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32014 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83051 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10158 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/10155 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： In a semiconductor device in which a plurality of semiconductor chips are stacked on a mounting substrate, an adhesive material formed of resin mainly having a thermosetting property is applied to a semiconductor chip mounting region on the mounting substrate. After mounting semiconductor chips on the adhesive material, the adhesive material is cured by heat treatment. When these parts are naturally cooled to a normal temperature, the mounting substrate warps in a convex shape due to the difference in an α value between the mounting substrate and the semiconductor chip. However, pads are connected by wire bonding and, an adhesive material formed of resin having a thermoplastic property is laminated to the semiconductor chip. Then, a spacer chip is bonded to the adhesive material by thermal compression bonding. Accordingly, due to heat generated at the time of thermal compression bonding, the mounting substrate and the semiconductor chip become substantially flat.

摘要翻译： 在多个半导体芯片堆叠在安装基板上的半导体器件中，由主要具有热固性的树脂形成的粘合材料被施加到安装基板上的半导体芯片安装区域。 将半导体芯片安装在粘合剂材料上之后，通过热处理固化粘合剂材料。 当这些部件自然冷却至常温时，由于安装基板和半导体芯片之间的α值的差异，安装基板会翘曲成凸形。 然而，焊盘通过引线接合连接，并且由具有热塑性的树脂形成的粘合剂材料层压到半导体芯片。 然后，通过热压接将间隔片结合到粘合剂材料上。 因此，由于热压接时产生的热量，安装基板和半导体芯片变得基本平坦。

公开(公告)号：US06916686B2

公开(公告)日：2005-07-12

申请号：US10342238

申请日：2003-01-15

申请人： Takashi Wada ,  Kazunari Suzuki ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki ,  Tomoko Higashino

发明人： Takashi Wada ,  Kazunari Suzuki ,  Chuichi Miyazaki ,  Toshihiro Shiotsuki ,  Tomoko Higashino

IPC分类号： H01L23/29 ,  H01L21/52 ,  H01L23/12 ,  H01L23/31 ,  H01L23/538 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L24/83 ,  H01L23/3128 ,  H01L23/3164 ,  H01L23/5387 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/75 ,  H01L24/97 ,  H01L25/0657 ,  H01L2221/68336 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83194 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/1517 ,  H01L2924/15311 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

摘要： A contact collect is provided to prevent damage to the top surface of a semiconductor chip at the time of die bonding the semiconductor chip. A protection tape is pasted to the top surface of the semiconductor chip before die bonding of the semiconductor chip is executed by pressing the back surface (underside) of the semiconductor chip sucked and securely held by the contact collect against respective chip-mounting regions of a multi-wiring board. The contact collect is, for example, substantially cylidrical in outside shape, and a bottom part (suction head) thereof is made of soft synthetic rubber, etc. The protection tape pasted to the top surface of the semiconductor chip prevents the top surface of the semiconductor chip from directly contacting with the contact collect even at the time of vacuum suction by pressing the suction head of the contact collect against the top surface of the semiconductor chip.

摘要翻译： 提供接触收集以防止在半导体芯片的芯片接合时损坏半导体芯片的顶表面。 将半导体芯片的裸片接合之前，通过将被触点收集并牢固地保持的半导体芯片的背面（下侧）按压到相应的芯片安装区域，将保护带粘贴到半导体芯片的顶表面 多线路板 接触收集体例如是外形大致圆形，其底部（吸头）由软质合成橡胶等构成。粘贴在半导体芯片的上表面的保护带防止了 即使在真空抽吸时，通过按压接触器的吸头将半导体芯片与接触件直接接触收集，也抵抗半导体芯片的顶表面收集。

公开(公告)号：US08772135B2

公开(公告)日：2014-07-08

申请号：US13310170

申请日：2011-12-02

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

IPC分类号： H01L21/00

CPC分类号： H01L22/32 ,  B23K26/0006 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L22/12 ,  H01L22/34 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/065 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2223/5448 ,  H01L2224/02235 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

摘要翻译： 为了通过隐形切割来划分半导体晶片，切割区域中的测试焊盘和对准靶沿着切割区域的宽度方向的一侧共同配置，并且用于形成改质区域的激光束照射到远离的位置 从测试平面和对准目标Am。 以这种方式，可以减少或防止使用隐形切割的半导体晶片的切割过程中的切割形状的缺陷。

公开(公告)号：US08084334B2

公开(公告)日：2011-12-27

申请号：US13017747

申请日：2011-01-31

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

IPC分类号： H01L21/00

CPC分类号： H01L22/32 ,  B23K26/0006 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L22/12 ,  H01L22/34 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/065 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2223/5448 ,  H01L2224/02235 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

摘要翻译： 为了通过隐形切割来划分半导体晶片，切割区域中的测试焊盘和对准靶沿着切割区域的宽度方向的一侧共同配置，并且用于形成改质区域的激光束照射到远离的位置 从测试平面和对准目标Am。 以这种方式，可以减少或防止使用隐形切割的半导体晶片的切割过程中的切割形状的缺陷。

公开(公告)号：US20100213594A1

公开(公告)日：2010-08-26

申请号：US12773231

申请日：2010-05-04

申请人： Tomoko Higashino ,  Chuichi Miyazaki ,  Yoshiyuki Abe

发明人： Tomoko Higashino ,  Chuichi Miyazaki ,  Yoshiyuki Abe

IPC分类号： H01L25/07 ,  H01L23/52

CPC分类号： H01L21/82 ,  H01L21/563 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/6834 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83444 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01022 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured.

摘要翻译： 具有将结构多层叠的结构的半导体器件变薄。 通过照射激光束形成重整区域，其中聚光点与半导体晶片的半导体衬底的内部放置在一起。 然后，通过旋涂法将液态状态的粘结材料涂布在半导体晶片的背面后，干燥，形成固体状粘接剂层。 然后，通过使上述重整区域成为分割原点，将半导体晶片分割成各半导体芯片。 通过利用后表面的粘合剂层将半导体芯片粘贴在另一半导体芯片的主表面上，制造了半导体器件分层多层结构的半导体器件。

公开(公告)号：US20070037321A1

公开(公告)日：2007-02-15

申请号：US11500945

申请日：2006-08-09

申请人： Tomoko Higashino ,  Chuichi Miyazaki ,  Yoshiyuki Abe

发明人： Tomoko Higashino ,  Chuichi Miyazaki ,  Yoshiyuki Abe

IPC分类号： H01L21/58

CPC分类号： H01L21/82 ,  H01L21/563 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/6834 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83444 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01022 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/45015 ,  H01L2924/207

摘要： The semiconductor device having the structure which laminated the chip in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of an other semiconductor chip by the adhesive layer of the back surface, the semiconductor device having the structure for which the semiconductor chip was laminated by many stages is manufactured.

摘要翻译： 具有将芯片多层叠的结构的半导体器件变薄。 通过照射激光束形成重整区域，其中聚光点与半导体晶片的半导体衬底的内部放置在一起。 然后，通过旋涂法将液态状态的粘结材料涂布在半导体晶片的背面后，干燥，形成固体状粘接剂层。 然后，通过使上述重整区域成为分割原点，将半导体晶片分割成各半导体芯片。 通过利用后表面的粘合剂层将半导体芯片粘贴在另一半导体芯片的主表面上，制造了半导体芯片被层叠多级的结构的半导体器件。

公开(公告)号：US07892949B2

公开(公告)日：2011-02-22

申请号：US12092850

申请日：2006-11-09

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

IPC分类号： H01L21/00

CPC分类号： H01L22/32 ,  B23K26/0006 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L22/12 ,  H01L22/34 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/065 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2223/5448 ,  H01L2224/02235 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

公开(公告)号：US07514294B2

公开(公告)日：2009-04-07

申请号：US11500945

申请日：2006-08-09

申请人： Tomoko Higashino ,  Chuichi Miyazaki ,  Yoshiyuki Abe

发明人： Tomoko Higashino ,  Chuichi Miyazaki ,  Yoshiyuki Abe

IPC分类号： H01L21/00

CPC分类号： H01L21/82 ,  H01L21/563 ,  H01L23/3121 ,  H01L24/27 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/6834 ,  H01L2224/16225 ,  H01L2224/274 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/83444 ,  H01L2224/8385 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01007 ,  H01L2924/01022 ,  H01L2924/3512 ,  H01L2224/13111 ,  H01L2224/45015 ,  H01L2924/207

摘要： The semiconductor device having the structure which laminated the chip in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of an other semiconductor chip by the adhesive layer of the back surface, the semiconductor device having the structure for which the semiconductor chip was laminated by many stages is manufactured.

摘要翻译： 具有将芯片多层叠的结构的半导体器件变薄。 通过照射激光束形成重整区域，其中聚光点与半导体晶片的半导体衬底的内部放置在一起。 然后，通过旋涂法将液态状态的粘结材料涂布在半导体晶片的背面后，干燥，形成固体状粘接剂层。 然后，通过使上述重整区域成为分割原点，将半导体晶片分割成各半导体芯片。 通过利用后表面的粘合剂层将半导体芯片粘贴在另一半导体芯片的主表面上，制造了半导体芯片被层叠多级的结构的半导体器件。

公开(公告)号：US20110124180A1

公开(公告)日：2011-05-26

申请号：US13017747

申请日：2011-01-31

申请人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

发明人： Yoshiyuki Abe ,  Chuichi Miyazaki ,  Hideo Mutou ,  Tomoko Higashino

IPC分类号： H01L21/78

CPC分类号： H01L22/32 ,  B23K26/0006 ,  B23K26/40 ,  B23K26/53 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/304 ,  H01L21/4853 ,  H01L21/565 ,  H01L21/67092 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/6838 ,  H01L21/78 ,  H01L22/12 ,  H01L22/34 ,  H01L23/544 ,  H01L23/562 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L25/065 ,  H01L25/0657 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/5442 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2223/5448 ,  H01L2224/02235 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2225/0651 ,  H01L2225/06562 ,  H01L2225/06582 ,  H01L2225/06596 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/04941 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： To divide a semiconductor wafer by stealth dicing, a test pad in a cutting region and an alignment target are collectively arranged along one side in a width direction of the cutting region, and a laser beam for forming a modified region is irradiated to a position away in plane from the test pad and the alignment target Am. In this manner, defects in cutting shape in a cutting process of a semiconductor wafer using stealth dicing can be reduced or prevented.

摘要翻译： 为了通过隐形切割来划分半导体晶片，切割区域中的测试焊盘和对准靶沿着切割区域的宽度方向的一侧共同配置，并且用于形成改质区域的激光束照射到远离的位置 从测试平面和对准目标Am。 以这种方式，可以减少或防止使用隐形切割的半导体晶片的切割过程中的切割形状的缺陷。