Abstract:
A method of selectively adjusting surface tension of a soldermask material. Specifically, a method of selectively adjusting the surface tension of a soldermask material to promote adhesion of a molding compound in a ball grid array package while maintaining a low surface tension on the ball attach area to prevent bridging between the solder balls. Solder balls require a low surface tension soldermask to minimize bridging, while the molding compound requires a high surface tension to provide adequate adhesion to the surface of the soldermask. By exposing selected portions of the soldermask to an activation method, such as ultra-violet radiation, the surface tension of the soldermask can be varied such that different areas of the package exhibit different surface tensions.
Abstract:
A method of selectively adjusting surface tension of a soldermask material. Specifically, a method of selectively adjusting the surface tension of a soldermask material to promote adhesion of a molding compound in a ball grid array package while maintaining a low surface tension on the ball attach area to prevent bridging between the solder balls. Solder balls require a low surface tension soldermask to minimize bridging, while the molding compound requires a high surface tension to provide adequate adhesion to the surface of the soldermask. By exposing selected portions of the soldermask to an activation method, such as ultra-violet radiation, the surface tension of the soldermask can be varied such that different areas of the package exhibit different surface tensions.
Abstract:
Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.
Abstract:
A device is disclosed which includes at least one integrated circuit die, at least a portion of which is positioned in a body of encapsulant material, and at least one conductive via extending through the body of encapsulant material.
Abstract:
Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.
Abstract:
Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.
Abstract:
Some embodiments include methods of assembling integrated circuit packages in which at least two different conductive layers are formed over a bond pad region of a semiconductor die, and in which a conductive projection associated with an interposer is bonded through a gold ball to an outermost of the at least two conductive layers. The conductive layers may comprise one or more of silver, gold, copper, chromium, nickel, palladium, platinum, tantalum, titanium, vanadium and tungsten. In some embodiments, the bond pad region may comprise aluminum, an inner of the conductive layers may comprise nickel, an outer of the conductive layers may comprise gold, the conductive projection associated with the interposer may comprise gold; and the thermosonic bonding may comprise gold-to-gold bonding of the interposer projection to a gold ball, and gold-to-gold bonding of the outer conductive layer to the gold ball. Some embodiments include integrated circuit packages.
Abstract:
Infrared (IR) absorbing layers and microelectronic imaging units that employ such layers are disclosed herein. In one embodiment, a method of manufacturing a microelectronic imaging unit includes attaching an IR-absorbing lamina having a filler material to a backside die surface of an imager workpiece. An individual imaging die is singulated from the workpiece such that a section of the infrared-absorbing lamina remains attached to the individual imaging die. The individual imaging die is coupled to an interposer substrate with a portion of the IR-absorbing lamina positioned therebetween. In another embodiment, the IR-absorbing lamina is a die attach film and the filler material is carbon black.
Abstract:
Semiconductor packages, packaged semiconductor devices, methods of manufacturing semiconductor packages, methods of packaging semiconductor devices, and associated systems are disclosed. A semiconductor package in accordance with a particular embodiment includes a die having a first side carrying a first bond site electrically connected to a sensor and/or a transmitter configured to receive and/or transmit radiation signals. The semiconductor package also includes encapsulant material at least partially encapsulating a portion of the die. The semiconductor package includes a conductive path from the first bond site to a second bond site, positioned on a back surface of the encapsulant, which can include through-encapsulant interconnects. A cover can be positioned adjacent to the die and be generally transparent to a target wavelength.
Abstract:
A method and apparatus for improved stencil/screen print quality is disclosed. The stencil or screen assists in application of a printable material onto a substrate, such as an adhesive to a semiconductor die of a semiconductor wafer during a lead-on-chip (LOC) packaging process. In one embodiment, the stencil includes a coating applied to at least one surface of a pattern of the stencil or screen to retard running of the printable material onto the surface. In another embodiment, the stencil or screen includes a second coating applied to at least one other surface of the pattern to promote spreading of the printable material onto the substrate.