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公开(公告)号：US06891274B2
公开(公告)日：2005-05-10
申请号：US10604794
申请日：2003-08-18
申请人： William Tze-You Chen , Ho-Ming Tong , Chun-Chi Lee , Su Tao , Jeng-Da Wu , Chih-Huang Chang , Po-Jen Cheng
发明人： William Tze-You Chen , Ho-Ming Tong , Chun-Chi Lee , Su Tao , Jeng-Da Wu , Chih-Huang Chang , Po-Jen Cheng
IPC分类号： H01L21/60 , H01L23/485 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/05 , H01L24/12 , H01L2224/0401 , H01L2224/05027 , H01L2224/05572 , H01L2224/13109 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/05552
摘要： An under-bump-metallurgy layer is provided. The under-bump-metallurgy layer is formed over the contact pad of a chip and a welding lump is formed over the under-ball-metallurgy layer. The under-bump-metallurgy layer comprises an adhesion layer, a barrier layer and a wettable layer. The adhesion layer is directly formed over the contact pad. The barrier layer made from a material such as nickel-vanadium alloy is formed over the adhesion layer. The wettable layer made from a material such as copper is formed over the barrier layer. The wettable layer has an overall thickness that ranges from about 3 μm to about 8 μm.
摘要翻译： 提供了凸块下的冶金层。 凸块下金属层形成在芯片的接触焊盘上，并且焊接块形成在球下冶金层之上。 凸块下冶金层包括粘合层，阻挡层和可润湿层。 粘合层直接形成在接触垫上。 在粘合层上形成由诸如镍 - 钒合金的材料制成的阻挡层。 由诸如铜的材料制成的可湿性层形成在阻挡层上。 可湿性层的总厚度范围为约3μm至约8μm。
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公开(公告)号：US06819002B2
公开(公告)日：2004-11-16
申请号：US10604795
申请日：2003-08-18
申请人： William Tze-You Chen , Ho-Ming Tong , Chun-Chi Lee , Su Tao , Jeng-Da Wu , Chih-Huang Chang , Po-Jen Cheng
发明人： William Tze-You Chen , Ho-Ming Tong , Chun-Chi Lee , Su Tao , Jeng-Da Wu , Chih-Huang Chang , Po-Jen Cheng
IPC分类号： H01L2348
CPC分类号： H01L24/11 , H01L24/02 , H01L24/13 , H01L2224/0401 , H01L2224/13099 , H01L2224/131 , H01L2224/13109 , H01L2224/13111 , H01L2224/13116 , H01L2224/13147 , H01L2924/0001 , H01L2924/00013 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01043 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/05042 , H01L2224/29099 , H01L2924/00014 , H01L2924/01083
摘要： An under-ball-metallurgy layer between a bonding pad on a chip and a solder bump made with tin-based material is provided. The under-ball-metallurgy layer at least includes an adhesion layer over the bonding pad, a nickel-vanadium layer over the adhesion layer, a wettable layer over the nickel-vanadium layer and a barrier layer over the wettable layer. The barrier layer prevents the penetration of nickel atoms from the nickel-vanadium layer and reacts with tin within the solder bump to form inter-metallic compound. This invention also provides an alternative under-ball-metallurgy layer that at least includes an adhesion layer over the bonding pad, a wettable layer over the adhesion layer and a nickel-vanadium layer over the wettable layer. The nickel within the nickel-vanadium layer may react with tin within the solder bump to form an inter-metallic compound.
摘要翻译： 提供了一种在芯片上的焊盘与由锡基材料制成的焊料凸块之间的球下冶金层。 所述球下冶金层至少包括粘合层上的粘合层，粘附层上的镍钒层，镍 - 钒层上的可润湿层和可湿性层上的阻挡层。 阻挡层防止镍原子从镍钒层渗透，并与焊锡凸块内的锡反应形成金属间化合物。 本发明还提供了替代的球内冶金层，其至少包括粘合层上方的粘合层，粘合层上方的可润湿层和可润湿层上的镍钒层。 镍钒层内的镍可能与焊锡凸块内的锡反应形成金属间化合物。
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公开(公告)号：US06864168B2
公开(公告)日：2005-03-08
申请号：US10604792
申请日：2003-08-18
申请人： William Tze-You Chen , Ho-Ming Tong , Chun-Chi Lee , Su Tao , Chih-Huang Chang , Jeng-Da Wu , Wen-Pin Huang , Po-Jen Cheng
发明人： William Tze-You Chen , Ho-Ming Tong , Chun-Chi Lee , Su Tao , Chih-Huang Chang , Jeng-Da Wu , Wen-Pin Huang , Po-Jen Cheng
IPC分类号： H01L21/60 , H01L23/485 , H01L21/447
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05624 , H01L2224/05666 , H01L2224/1134 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13164 , H01L2224/78301 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A bump structure on a contact pad and a fabricating process thereof. The bump comprises an under-ball-metallurgy layer, a bonding mass and a welding lump. The under-ball-metallurgy layer is formed over the contact pad and the bonding mass is formed over the under-ball-metallurgy layer by conducting a pressure bonding process. The bonding mass having a thickness between 4 to 10 μm is made from a material such as copper. The welding lump is formed over the bonding mass such that a sidewall of the bonding mass is also enclosed.
摘要翻译： 接触垫上的凸块结构及其制造方法。 凸块包括球下冶金层，粘结块和焊接块。 在接触焊盘之上形成球下冶金层，通过压接工艺在焊球下方形成粘结物质。 厚度为4〜10μm的接合体由铜等材料制成。 焊接块形成在接合块上，使得接合块的侧壁也被封闭。
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公开(公告)号：US20050200014A1
公开(公告)日：2005-09-15
申请号：US10905675
申请日：2005-01-17
申请人： William Chen , Ho-Ming Tong , Chun-Chi Lee , Su Tao , Chih-Huang Chang , Jeng-Da Wu , Wen-Pin Huang , Po-Jen Cheng
发明人： William Chen , Ho-Ming Tong , Chun-Chi Lee , Su Tao , Chih-Huang Chang , Jeng-Da Wu , Wen-Pin Huang , Po-Jen Cheng
IPC分类号： H01L21/60 , H01L23/485 , H01L23/48
CPC分类号： H01L24/05 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0401 , H01L2224/05624 , H01L2224/05666 , H01L2224/1134 , H01L2224/13099 , H01L2224/13109 , H01L2224/13111 , H01L2224/13164 , H01L2224/78301 , H01L2924/01005 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01043 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A bump structure on a contact pad and a fabricating process thereof. The bump comprises an under-ball-metallurgy layer, a bonding mass and a welding lump. The under-ball-metallurgy layer is formed over the contact pad and the bonding mass is formed over the under-ball-metallurgy layer by conducting a pressure bonding process. The bonding mass having a thickness between 4 to 10 μm is made from a material such as copper. The welding lump is formed over the bonding mass such that a sidewall of the bonding mass is also enclosed.
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公开(公告)号：US06692581B2
公开(公告)日：2004-02-17
申请号：US10248802
申请日：2003-02-20
申请人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Ching-Fu Horng , Shih-Kuang Chen , Shyh-Ing Wu , Chun-Hung Lin , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
发明人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Ching-Fu Horng , Shih-Kuang Chen , Shyh-Ing Wu , Chun-Hung Lin , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
IPC分类号： B23K35363
CPC分类号： H01L24/10 , B23K35/0244 , B23K35/025 , B23K35/262 , H01L24/13 , H01L2224/05001 , H01L2224/05022 , H01L2224/05572 , H01L2224/13 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/0103 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H05K3/3484 , H05K2201/0266 , H05K2203/043 , H01L2924/00
摘要： A solder paste for fabricating bumps includes a flux and metallic alloy powder. The metallic alloy powder includes a plurality of low eutectic metallic alloy granules, and the size of these metallic alloy granules is 20-60 &mgr;m and the average size of the metallic granules is 35 &mgr;m to 45 &mgr;m.
摘要翻译： 用于制造凸块的焊膏包括焊剂和金属合金粉末。 金属合金粉末包含多个低共晶金属合金颗粒，这些金属合金颗粒的尺寸为20-60μm，金属颗粒的平均尺寸为35μm〜45μm。
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公开(公告)号：US06664128B2
公开(公告)日：2003-12-16
申请号：US10248716
申请日：2003-02-12
申请人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
发明人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
IPC分类号： H01L2144
CPC分类号： C25F3/02 , C23F1/26 , H01L21/32134 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05572 , H01L2224/1147 , H01L2224/131 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/14 , H05K3/3473 , H05K2203/054 , H01L2224/13099 , H01L2924/00014
摘要： The present invention provides a bump fabrication process. After forming an under bump metallurgy (UBM) layer and bumps in sequence over the substrate, the under bump metallurgy layer that is not covered by the bumps is etched with an etchant. The etchant mainly comprises sulfuric acid and de-ionized water. The etchant can etch the nickel-vanadium layer of the UBM layer without damaging the bumps.
摘要翻译： 本发明提供一种凸块制造工艺。 在衬底上顺序地形成凹凸不平的冶金（UBM）层和凸块之后，用蚀刻剂蚀刻未被凸块覆盖的凸块下金属层。 蚀刻剂主要包括硫酸和去离子水。 蚀刻剂可以蚀刻UBM层的镍钒层，而不会损坏凸块。
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7.发明授权公开(公告)号：US06927964B2
公开(公告)日：2005-08-09
申请号：US10604772
申请日：2003-08-15
申请人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
发明人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
IPC分类号： H01L21/60 , H01L23/31 , H01L23/525 , H02H5/00
CPC分类号： H01L24/12 , H01L23/3171 , H01L23/5258 , H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05556 , H01L2224/05572 , H01L2224/13099 , H01L2924/01006 , H01L2924/01033 , H01L2924/01075 , H01L2924/01082 , H01L2924/12042 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： A semiconductor device with a capability can prevent a burnt fuse pad from re-electrical connection, wherein the semiconductor device includes a bump pad and a fuse pad over a wafer. The fuse pad includes the burnt fuse pad having a gap for electrical isolation. The semiconductor device comprises a dielectric layer, disposed substantially above the burnt fuse pad and filling the gap, and a bump structure, disposed on the bump pad. The foregoing semiconductor device can further comprise a passivation layer, which exposes the bump pad and a portion of the burnt fuse pad. Wherein, the dielectric layer is over the passivation layer, covers the exposed portion of the burnt fuse pad and fills the gap.
摘要翻译： 具有能力的半导体器件可以防止燃烧的熔丝焊盘再次电连接，其中半导体器件包括凸块焊盘和晶片上的熔丝焊盘。 保险丝座包括具有用于电隔离的间隙的燃烧的保险丝座。 该半导体器件包括介于绝缘层上的绝缘层，该绝缘层基本上设置在烧结的熔丝焊盘的上方并填充间隙，以及设置在凸点焊盘上的凸块结构。 上述半导体器件还可以包括钝化层，其暴露凸块焊盘和烧焦的熔丝焊盘的一部分。 其中，电介质层在钝化层上方，覆盖烧结的熔丝垫的暴露部分并填充间隙。
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公开(公告)号：US06846719B2
公开(公告)日：2005-01-25
申请号：US10248804
申请日：2003-02-20
申请人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
发明人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
CPC分类号： H01L24/05 , H01L24/02 , H01L24/11 , H01L24/12 , H01L2224/0401 , H01L2224/05027 , H01L2224/05572 , H01L2224/056 , H01L2224/1147 , H01L2224/13099 , H01L2924/0002 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/00014 , H01L2224/05552
摘要： A wafer bump fabrication process is provided in the present invention. A wafer with multiple bonding pads and a passivation layer, which exposes the bonding pads, is provided. The surface of each bonding pad has an under bump metallurgy layer. A patterned photoresist layer with a plurality of opening is formed which openings expose the under bump metallurgy layer. Afterwards a curing process is performed to cure the patterned photoresist layer. Following a solder paste fill-in process is performed to fill a solder paste into the openings. A reflow process is performed to form bumps from the solder paste in the openings. The patterned photoresist layer is removed.
摘要翻译： 在本发明中提供了晶片凸块制造工艺。 提供具有多个接合焊盘的晶片和暴露焊接焊盘的钝化层。 每个焊盘的表面具有凸块下的冶金层。 形成具有多个开口的图案化光致抗蚀剂层，这些开口暴露凸块下金属层。 之后进行固化工艺以固化图案化的光致抗蚀剂层。 进行焊膏填充处理以将焊膏填充到开口中。 进行回流处理以从开口中的焊膏形成凸起。 去除图案化的光致抗蚀剂层。
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公开(公告)号：US06617237B1
公开(公告)日：2003-09-09
申请号：US10248882
申请日：2003-02-27
申请人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
发明人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
IPC分类号： H01L2144
CPC分类号： H01L24/11 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/05572 , H01L2224/11332 , H01L2224/11334 , H01L2224/1147 , H01L2224/13099 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14
摘要： A lead-free solder bump fabrication process for producing a plurality of lead-free solder bumps over a wafer is provided. The lead-free solder bump fabrication process includes forming a lead-free pre-formed solder bump over each bonding pad on the wafer and then forming a patterned solder mask layer over the active surface of the wafer. The openings in the solder mask layer expose the respective lead-free pre-formed solder bumps on the wafer. Thereafter, lead-free solder material is deposited into the opening. The material composition of the lead-free solder material differs from the material composition of the lead-free pre-formed solder bump. A reflow process is conducted so that the lead-free pre-formed solder bump fuses with the lead-free solder material to form a lead-free solder bump. Finally, the solder mask layer is removed.
摘要翻译： 提供了一种用于在晶片上产生多个无铅焊料凸块的无铅焊料凸块制造工艺。 无铅焊料凸块制造工艺包括在晶片上的每个接合焊盘上形成无铅预成形焊料凸块，然后在晶片的有效表面上形成图案化的焊接掩模层。 焊接掩模层中的开口露出晶片上的相应的无铅预制焊料凸点。 此后，将无铅焊料材料沉积到开口中。 无铅焊料的材料组成不同于无铅预成形焊料凸块的材料组成。 进行回流处理，使得无铅预成形焊料凸块与无铅焊料材料熔合以形成无铅焊料凸块。 最后，去除焊接掩模层。
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公开(公告)号：US06877653B2
公开(公告)日：2005-04-12
申请号：US10248411
申请日：2003-01-17
申请人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
发明人： Ho-Ming Tong , Chun-Chi Lee , Jen-Kuang Fang , Min-Lung Huang , Jau-Shoung Chen , Ching-Huei Su , Chao-Fu Weng , Yung-Chi Lee , Yu-Chen Chou , Tsung-Hua Wu , Su Tao
CPC分类号： H05K3/3484 , B23K35/0244 , B23K35/025 , B23K35/262 , B23K35/268 , H05K3/3463 , H05K2201/0379 , H05K2203/043 , H05K2203/0568
摘要： A method of modifying the tin to lead ratio of a tin-lead bump forms a patterned solder mask over a substrate that comprises a first tin-lead bump formed thereon, the patterned solder mask having an opening that exposes the tin-lead bump. A solder material including tin and lead is filled in the opening of the solder mask over the first tin-lead bump. The solder material has a tin to lead ratio that differs from that of the first tin-lead bump. The solder material is reflowed to fuse with the first tin-lead bump, which forms a second tin-lead bump. The tin to lead ratio of the second tin-lead bump is thereby different from that of the first tin-lead bump.
摘要翻译： 改变锡铅凸块的锡引导比的方法在衬底上形成图案化的焊料掩模，该衬底包括形成在其上的第一锡铅凸块，所述图案化焊料掩模具有暴露锡铅凸块的开口。 包括锡和铅的焊料材料填充在第一锡铅凸块上的焊料掩模的开口中。 焊锡材料具有与第一锡铅凸块不同的锡与引线比。 焊料材料被回流以与形成第二锡铅凸块的第一锡铅凸块熔合。 因此，第二锡铅凸块的锡与引线比不同于第一锡铅凸块的锡引导比。
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