Graded lithographic mask
    4.
    发明申请
    Graded lithographic mask 有权
    分级光刻面具

    公开(公告)号:US20090104540A1

    公开(公告)日:2009-04-23

    申请号:US11873473

    申请日:2007-10-17

    IPC分类号: G03F1/00 H01L21/8234

    CPC分类号: H01L21/8234 G03F1/32

    摘要: In one aspect there is provided a gray scale lithographic mask that comprises a transparent substrate and a metallic layer located over the substrate, wherein the metallic layer has tapered edges with a graded transparency. The lithographic mask, along with etching processes may be used to transfer a pattern 450a into a layer of a semiconductor device.

    摘要翻译: 在一个方面,提供了一种灰度级光刻掩模,其包括透明基板和位于基板上方的金属层,其中金属层具有渐变透明度的锥形边缘。 光刻掩模以及蚀刻工艺可以用于将图案450a转移到半导体器件的层中。

    Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode
    5.
    发明授权
    Micro-electromechanical switch fabricated by simultaneous formation of a resistor and bottom electrode 有权
    通过同时形成电阻器和底部电极制造的微机电开关

    公开(公告)号:US06698082B2

    公开(公告)日:2004-03-02

    申请号:US09941031

    申请日:2001-08-28

    IPC分类号: H01H4300

    摘要: The present invention provides a method and product-by-method of integrating a bias resistor in circuit with a bottom electrode of a micro-electromechanical switch on a silicon substrate. The resistor and bottom electrode are formed simultaneously by first sequentially depositing a layer of a resistor material (320), a hard mask material (330) and a metal material (340) on a silicon substrate forming a stack. The bottom electrode and resistor lengths are subsequently patterned and etched (350) followed by a second etching (360) process to remove the hard mask and metal materials from the defined resistor length. Finally, in a preferred embodiment, the bottom electrode and resistor structure is encapsulated with a layer of dielectric which is patterned and etched (370) to correspond to the defined bottom electrode and resistor.

    摘要翻译: 本发明提供了一种将电路中的偏置电阻与硅基板上的微机电开关的底电极集成的方法和方法。 电阻器和底部电极通过首先在形成叠层的硅衬底上依次沉积电阻材料层(320),硬掩模材料(330)和金属材料(340)而同时形成。 随后对底部电极和电阻器长度进行图案化和蚀刻(350),随后进行第二蚀刻(360)处理,以从限定的电阻器长度去除硬掩模和金属材料。 最后,在一个优选实施例中,底部电极和电阻器结构用一层电介质封装,电介质层被图案化并蚀刻(370)以对应于限定的底部电极和电阻器。

    Resonant microcavity display
    6.
    发明授权
    Resonant microcavity display 失效
    共振微腔显示

    公开(公告)号:US5616986A

    公开(公告)日:1997-04-01

    申请号:US516944

    申请日:1995-08-18

    摘要: A resonant microcavity display, comprising a thin-film resonant microcavity with a phosphor active region is disclosed. The microcavity comprises: a rigid substrate; a front reflector disposed upon the rigid substrate; a phosphor active region disposed upon the front reflector; and a back reflector disposed upon the active region. The display preferentially emits light that propagates along the axis perpendicular to plane of the display, due to its quantum mechanical properties. It exhibits high external efficiency, highly controllable chromaticity, high resolution, highly directional output and highly efficient heat transfer characteristics. For these reasons it provides a suitable display element for projection screen television, high definition television, direct view television, flat panel displays, optical coupling, and other applications.

    摘要翻译: 公开了一种包括具有磷光体活性区域的薄膜谐振微腔的共振微腔显示器。 微腔包括:刚性基底; 设置在刚性基板上的前反射器; 设置在前反射器上的荧光体有源区; 以及设置在有源区上的后反射器。 由于其量子力学性能,显示器优先发射沿垂直于显示器平面的轴传播的光。 它表现出高的外部效率,高度可控的色度,高分辨率,高定向输出和高效的传热特性。 由于这些原因,它提供了用于投影屏幕电视,高分辨率电视,直观观看电视,平板显示器,光耦合等应用的合适的显示元件。

    Piezoelectric resonator with an efficient all-dielectric Bragg reflector
    7.
    发明授权
    Piezoelectric resonator with an efficient all-dielectric Bragg reflector 有权
    具有高效全介质布拉格反射器的压电谐振器

    公开(公告)号:US07463118B2

    公开(公告)日:2008-12-09

    申请号:US11450088

    申请日:2006-06-09

    IPC分类号: H03H9/15 H01L41/08

    摘要: A piezoelectric resonator with an acoustic Bragg reflector that includes alternating layers of high and low acoustic impedance materials. The high and low acoustic impedance dielectric materials make up electrically insulating layers.

    摘要翻译: 具有声布拉格反射器的压电谐振器,其包括高和低声阻抗材料的交替层。 高和低声阻抗介电材料组成电绝缘层。

    Inkjet printhead incorporating a memory array
    8.
    发明授权
    Inkjet printhead incorporating a memory array 有权
    包含存储器阵列的喷墨打印头

    公开(公告)号:US07401875B2

    公开(公告)日:2008-07-22

    申请号:US10888407

    申请日:2004-07-09

    IPC分类号: B41J29/38

    摘要: A thermal inkjet printhead 100 of the present invention includes a heating element 110, an ink chamber, control circuitry 108, an ink reservoir, and a memory array 106. The control circuitry 108 causes the heating element to generate thermal energy thereby causing ink within the ink chamber to generate bubbles of ink, which are then expelled through a nozzle. The ink reservoir replenishes used ink in the ink chamber. The memory array 106 stores and provides the identification parameters for the thermal inkjet printhead 100. The identification parameters are typically provided during initialization of the printer and include color(s) of ink (e.g., black, green, red, blue), a number of nozzles on the thermal inkjet printhead, an addressing frequency, nozzle spacing, heating architecture, and the like. The identification parameters can include other information such as a unique serial identification number for the thermal inkjet printhead, manufacturer serial number, lot number, date of manufacture, compatible printers, ink capacity, ink remaining, re-ordering information for replacement ink cartridges, and the like.

    摘要翻译: 本发明的热喷墨打印头100包括加热元件110,墨水室,控制电路108,墨水储存器和存储器阵列106。 控制电路108使加热元件产生热能,从而使墨室内的墨水产生墨水泡沫,然后通过喷嘴排出墨水。 墨水容器补充墨水室中的用过的墨水。 存储器阵列106存储并提供用于热喷墨打印头100的识别参数。 通常在打印机的初始化期间提供识别参数,并且包括墨水的颜色(例如,黑色,绿色,红色,蓝色),热喷墨打印头上的多个喷嘴,寻址频率,喷嘴间隔,加热结构 ,等等。 识别参数可以包括其他信息,例如热喷墨打印头的唯一串行识别号码,制造商序列号,批号,制造日期,兼容打印机,墨水容量,剩余墨水,更换墨盒的重新排序信息,以及 类似。

    One mask solution for the integration of the thin film resistor
    10.
    发明授权
    One mask solution for the integration of the thin film resistor 有权
    一种面膜解决方案,用于整合薄膜电阻

    公开(公告)号:US06497824B1

    公开(公告)日:2002-12-24

    申请号:US09661716

    申请日:2000-09-14

    IPC分类号: B44C122

    CPC分类号: H01L28/24

    摘要: A method for integrating a thin film resistor (60) into an interconnect process flow. Metal interconnect lines (40) are formed over a semiconductor body (10). An interlevel dielectric (50) is then formed over the metal interconnect lines (40). Conductively filled vias (62) are then formed through the interlevel dielectric (50) to the metal interconnect lines (40). A thin film resistor (60) is then formed connecting between at least two of the conductively filled vias (62) using a single mask step. Connection to the resistor (60) is from below using a via process sequence already required for connecting between interconnect layers (40, 64). Thus, only one additional mask step is required to incorporate the resistor (60).

    摘要翻译: 一种将薄膜电阻器(60)集成到互连工艺流程中的方法。 金属互连线(40)形成在半导体本体(10)上。 然后在金属互连线(40)上形成层间电介质(50)。 然后,通过层间电介质(50)将导电填充的通孔(62)形成到金属互连线(40)。 然后使用单个掩模步骤形成在至少两个导电填充的通孔(62)之间连接薄膜电阻器(60)。 使用已经需要连接互连层(40,64)的通孔工艺程序,从下方连接到电阻器(60)。 因此,仅需要一个附加的掩模步骤来结合电阻器(60)。