公开(公告)号：US08481448B2

公开(公告)日：2013-07-09

申请号：US12838863

申请日：2010-07-19

申请人： Wugeng Liang ,  David Sullivan ,  James W. Kauffman ,  Clark Rea ,  Joe Linzer ,  Shahid Shaikh

发明人： Wugeng Liang ,  David Sullivan ,  James W. Kauffman ,  Clark Rea ,  Joe Linzer ,  Shahid Shaikh

IPC分类号： B01J21/00 ,  B01J23/00 ,  B01J23/32 ,  B01J27/00 ,  B01J27/185 ,  B01J27/188 ,  B01J27/19 ,  B01J27/192 ,  B01J27/198 ,  C07C51/16 ,  C07C51/235

CPC分类号： C07C51/235 ,  B01J23/002 ,  B01J27/199 ,  B01J37/031 ,  B01J37/08 ,  B01J2523/00 ,  C07C51/252 ,  C07C57/04 ,  B01J2523/15 ,  B01J2523/17 ,  B01J2523/53 ,  B01J2523/54 ,  B01J2523/55 ,  B01J2523/68 ,  B01J2523/828

摘要： The invention is a heteropoly acid compound catalyst composition, a method of making the catalyst composition and a process for the oxidation of saturated and/or unsaturated aldehydes to unsaturated carboxylic acids using the catalyst composition. The catalyst composition is a heteropoly acid compound containing molybdenum, vanadium, phosphorus, cesium, bismuth, copper and antimony. Thermal stability is achieved with higher cesium content (up to less than 3.0) but antimony, copper and bismuth must be present to maintain good activity.The catalyst is made by dissolving compounds of the components of each of the heteropoly acid compounds in a solution, precipitating the heteropoly acid compounds, obtaining a catalyst precursor and calcining the catalyst precursor to form a heteropoly acid compound catalyst.Unsaturated aldehydes, such as methacrolein, may be oxidized in the presence of the heteropoly acid compound catalyst to produce an unsaturated carboxylic acid, such as methacrylic acid.

摘要翻译： 本发明是杂多酸化合物催化剂组合物，制备催化剂组合物的方法和使用催化剂组合物将饱和和/或不饱和醛氧化成不饱和羧酸的方法。 催化剂组合物是含有钼，钒，磷，铯，铋，铜和锑的杂多酸化合物。 铯含量较高（高于3.0）可达到热稳定性，但必须存在锑，铜和铋以保持良好的活性。 通过将各种杂多酸化合物的组分的化合物溶解在溶液中，沉淀杂多酸化合物，获得催化剂前体和煅烧催化剂前体以形成杂多酸化合物催化剂来制备催化剂。 不饱和醛如甲基丙烯醛可在杂多酸化合物催化剂存在下被氧化，生成不饱和羧酸，如甲基丙烯酸。

公开(公告)号：US20120016159A1

公开(公告)日：2012-01-19

申请号：US12838863

申请日：2010-07-19

申请人： Wugeng Liang ,  David Sullivan ,  James W. Kauffman ,  Clark Rea ,  Joe Linzer ,  Shahid Shaikh

发明人： Wugeng Liang ,  David Sullivan ,  James W. Kauffman ,  Clark Rea ,  Joe Linzer ,  Shahid Shaikh

IPC分类号： C07C51/25 ,  C07C51/235 ,  B01J27/199

CPC分类号： C07C51/235 ,  B01J23/002 ,  B01J27/199 ,  B01J37/031 ,  B01J37/08 ,  B01J2523/00 ,  C07C51/252 ,  C07C57/04 ,  B01J2523/15 ,  B01J2523/17 ,  B01J2523/53 ,  B01J2523/54 ,  B01J2523/55 ,  B01J2523/68 ,  B01J2523/828

摘要： The invention is a heteropoly acid compound catalyst composition, a method of making the catalyst composition and a process for the oxidation of saturated and/or unsaturated aldehydes to unsaturated carboxylic acids using the catalyst composition. The catalyst composition is a heteropoly acid compound containing molybdenum, vanadium, phosphorus, cesium, bismuth, copper and antimony. Thermal stability is achieved with higher cesium content (up to less than 3.0) but antimony, copper and bismuth must be present to maintain good activity.The catalyst is made by dissolving compounds of the components of each of the heteropoly acid compounds in a solution, precipitating the heteropoly acid compounds, obtaining a catalyst precursor and calcining the catalyst precursor to form a heteropoly acid compound catalyst.Unsaturated aldehydes, such as methacrolein, may be oxidized in the presence of the heteropoly acid compound catalyst to produce an unsaturated carboxylic acid, such as methacrylic acid.

摘要翻译： 本发明是杂多酸化合物催化剂组合物，制备催化剂组合物的方法和使用催化剂组合物将饱和和/或不饱和醛氧化成不饱和羧酸的方法。 催化剂组合物是含有钼，钒，磷，铯，铋，铜和锑的杂多酸化合物。 铯含量较高（高于3.0）可达到热稳定性，但必须存在锑，铜和铋以保持良好的活性。 通过将各种杂多酸化合物的组分的化合物溶解在溶液中，沉淀杂多酸化合物，获得催化剂前体和煅烧催化剂前体以形成杂多酸化合物催化剂来制备催化剂。 不饱和醛如甲基丙烯醛可在杂多酸化合物催化剂存在下被氧化，生成不饱和羧酸，如甲基丙烯酸。

公开(公告)号：US08551443B2

公开(公告)日：2013-10-08

申请号：US12874479

申请日：2010-09-02

申请人： Aghaddin Mamedov ,  Shahid Shaikh ,  Clark Rea ,  Xiankuan Zhang

发明人： Aghaddin Mamedov ,  Shahid Shaikh ,  Clark Rea ,  Xiankuan Zhang

IPC分类号： C07C15/00

CPC分类号： B01J23/80 ,  B01J37/03 ,  C07C5/48 ,  C07C2521/02 ,  C07C2523/02 ,  C07C2523/10 ,  C07C2523/14 ,  C07C2523/18 ,  C07C2523/22 ,  C07C2523/26 ,  C07C2523/28 ,  C07C2523/34 ,  C07C2523/75 ,  C07C2523/80 ,  C07C11/167

摘要： A catalyst for oxidative dehydrogenation of organic compounds is provided by forming a solution of catalyst precursor components comprised of Fe+3 and Zn+2 cations and at least one other modifier element cation in water to form an aqueous solution of the catalyst precursor components. The modifier element cation has a standard reduction potential of from greater than about −2.87 E° (V) to less than about −0.036 E° (V) with a valence of +2. A base is separately and simultaneously added to the aqueous solution in amounts to maintain the pH of the aqueous solution at a pH of from about 8.5 to about 9.5 as the catalyst precursor components. The catalyst precursor components are allowed to react and precipitate out of solution as a precipitate. The resulting precipitate is calcined to form a modified zinc ferrite catalyst compound.

摘要翻译： 通过在水中形成由Fe + 3和Zn + 2阳离子和至少一种其它改性元素阳离子组成的催化剂前体组分的溶液以形成催化剂前体组分的水溶液来提供有机化合物的氧化脱氢催化剂。 改性剂元素阳离子具有大于约-2.87E（V）至小于约-0.036E（V）的标准还原电位，其价态为+2。 单独地并且同时地将碱加入到水溶液中，其用量将水溶液的pH保持在约8.5至约9.5的pH作为催化剂前体组分。 催化剂前体组分作为沉淀物反应并沉淀出溶液。 将所得沉淀物煅烧以形成改性的锌铁氧体催化剂化合物。

公开(公告)号：US20120059208A1

公开(公告)日：2012-03-08

申请号：US12874479

申请日：2010-09-02

申请人： Aghaddin Mamedov ,  Shahid Shaikh ,  Clark Rea ,  Xiankuan Zhang

发明人： Aghaddin Mamedov ,  Shahid Shaikh ,  Clark Rea ,  Xiankuan Zhang

IPC分类号： C07C5/333 ,  B01J23/10 ,  B01J23/889 ,  B01J23/80 ,  B01J23/881

CPC分类号： B01J23/80 ,  B01J37/03 ,  C07C5/48 ,  C07C2521/02 ,  C07C2523/02 ,  C07C2523/10 ,  C07C2523/14 ,  C07C2523/18 ,  C07C2523/22 ,  C07C2523/26 ,  C07C2523/28 ,  C07C2523/34 ,  C07C2523/75 ,  C07C2523/80 ,  C07C11/167

摘要： A catalyst for oxidative dehydrogenation of organic compounds is provided by forming a solution of catalyst precursor components comprised of Fe+3 and Zn+2 cations and at least one other modifier element cation in water to form an aqueous solution of the catalyst precursor components. The modifier element cation has a standard reduction potential of from greater than about −2.87 E° (V) to less than about −0.036 E° (V) with a valence of +2. A base is separately and simultaneously added to the aqueous solution in amounts to maintain the pH of the aqueous solution at a pH of from about 8.5 to about 9.5 as the catalyst precursor components. The catalyst precursor components are allowed to react and precipitate out of solution as a precipitate. The resulting precipitate is calcined to form a modified zinc ferrite catalyst compound.

摘要翻译： 通过在水中形成由Fe + 3和Zn + 2阳离子和至少一种其它改性元素阳离子组成的催化剂前体组分的溶液以形成催化剂前体组分的水溶液来提供有机化合物的氧化脱氢催化剂。 改性剂元素阳离子具有大于约-2.87E（V）至小于约-0.036E（V）的标准还原电位，其价态为+2。 单独地并且同时地将碱加入到水溶液中，其用量将水溶液的pH保持在约8.5至约9.5的pH作为催化剂前体组分。 催化剂前体组分作为沉淀物反应并沉淀出溶液。 将所得沉淀物煅烧以形成改性的锌铁氧体催化剂化合物。

公开(公告)号：US20070123730A1

公开(公告)日：2007-05-31

申请号：US11288681

申请日：2005-11-29

申请人： Edouard Mamedov ,  Shahid Shaikh ,  Armando Araujo

发明人： Edouard Mamedov ,  Shahid Shaikh ,  Armando Araujo

IPC分类号： C07C253/26

CPC分类号： C07C253/24 ,  B01J23/002 ,  B01J23/31 ,  B01J37/0236 ,  B01J37/03 ,  B01J2523/00 ,  C07C253/26 ,  Y02P20/52 ,  C07C255/08 ,  B01J2523/31 ,  B01J2523/54 ,  B01J2523/55 ,  B01J2523/69 ,  B01J2523/32 ,  B01J2523/68 ,  B01J2523/842 ,  B01J2523/48 ,  B01J2523/36 ,  B01J2523/33 ,  B01J2523/56 ,  B01J2523/42 ,  B01J2523/64 ,  B01J2523/47 ,  B01J2523/12 ,  B01J2523/22 ,  B01J2523/43 ,  B01J2523/57 ,  B01J2523/30 ,  B01J2523/41 ,  C07C255/50 ,  C07C255/51

摘要： Disclosed is a catalyst composition which does not contain antimony or molybdenum for the vapor phase ammoxidation of alkanes of the general empirical formula: VWaBibMcOxwherein M is one or more elements selected from sodium, cesium, magnesium, calcium, barium, boron, yttrium, indium, aluminum, gallium, tin, titanium, silicon, zirconium, germanium, niobium and tantalum, a is 0.2 to 10, b is 0.5 to 5, c is 0 to 10 and x is determined by the valence requirements of the elements present. The catalyst precursor is precipitated from a solution or slurry of compounds of vanadium, tungsten, bismuth and, optionally, M, then separated, dried and calcined to give a phase or combination of phases active in the ammoxidation of low-weight paraffins to the corresponding unsaturated mononitriles. Nitriles may be produced in a gas phase catalytic reaction of alkanes with ammonia and oxygen in the presence of the catalyst.

摘要翻译： 公开了一种催化剂组合物，其不含锑或钼，用于通用经验式的烷烃的气相氨氧化：<？in-line-formula description =“In-line formula”end =“lead”？> VW

公开(公告)号：US08679987B2

公开(公告)日：2014-03-25

申请号：US13468776

申请日：2012-05-10

申请人： Patrick Reilly ,  Shahid Shaikh ,  Tersem Summan ,  Deenesh Padhi ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Bok Hoen Kim ,  Derek R. Witty

发明人： Patrick Reilly ,  Shahid Shaikh ,  Tersem Summan ,  Deenesh Padhi ,  Sanjeev Baluja ,  Juan Carlos Rocha-Alvarez ,  Thomas Nowak ,  Bok Hoen Kim ,  Derek R. Witty

IPC分类号： H01L21/47 ,  H01L21/312

CPC分类号： H01L21/02527 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/31144

摘要： Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.

摘要翻译： 本文所述的实施例涉及一种用于处理衬底的方法。 在一个实施方案中，该方法包括将包含烃源和稀释气体的气体混合物引入位于处理系统内的沉积室中，在沉积室中从约200℃至约200℃的温度和 约700℃以在基底上形成低氢含量的无定形碳层，将基底转移到位于处理系统内的固化室中，而不破坏真空，并在固化温度下将基底暴露于固化室内的UV辐射 高于约200℃

公开(公告)号：US20120015521A1

公开(公告)日：2012-01-19

申请号：US13093679

申请日：2011-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/308 ,  H01L21/32

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体 碳层。

公开(公告)号：US08778813B2

公开(公告)日：2014-07-15

申请号：US13102846

申请日：2011-05-06

申请人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

发明人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

IPC分类号： H01L21/31 ,  H01L21/469 ,  H01L21/00 ,  H01J37/32 ,  C23C16/46 ,  C23C16/509 ,  H01L21/67 ,  H01L21/30 ,  H01L21/42 ,  C23C16/00 ,  B05C11/11

CPC分类号： H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。

公开(公告)号：US20120208374A1

公开(公告)日：2012-08-16

申请号：US13455916

申请日：2012-04-25

申请人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

发明人： Hang Yu ,  Deenesh Padhi ,  Man-Ping Cai ,  Naomi Yoshida ,  Li Yan Miao ,  Siu F. Cheng ,  Shahid Shaikh ,  Sohyun Park ,  Heung Lak Park ,  Bok Hoen Kim

IPC分类号： H01L21/312

CPC分类号： H01L21/02115 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338

摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.

摘要翻译： 本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。 在一个实施方案中，提供了形成复合无定形碳层的方法。 该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体， 在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中， 用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

公开(公告)号：US20110294303A1

公开(公告)日：2011-12-01

申请号：US13102846

申请日：2011-05-06

申请人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

发明人： Ramprakash Sankarakrishnan ,  Ganesh Balasubramanian ,  Juan Carlos Rocha-Alvarez ,  Dale R. Du Bois ,  Mark Fodor ,  Jianhua Zhou ,  Amit Bansal ,  Mohamad A. Ayoub ,  Shahid Shaikh ,  Patrick Reilly ,  Deenesh Padhi ,  Thomas Nowak

IPC分类号： C23C16/44 ,  H01L21/30 ,  C23C16/509

CPC分类号： H01L21/6719 ,  C23C16/46 ,  C23C16/5096 ,  H01J37/32495 ,  H01J37/32568 ,  H01J37/32651 ,  H01J37/32715

摘要： An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, a shield member disposed in the processing chamber below the substrate support, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source, and an electrode separated from the conductive gas distributor and the chamber body by electrical insulators. The electrode is also coupled to a source of electric power. The substrate support is formed with a stiffness that permits very little departure from parallelism. The shield member thermally shields a substrate transfer opening in the lower portion of the chamber body. A pumping plenum is located below the substrate support processing position, and is spaced apart therefrom.

摘要翻译： 提供了一种用于等离子体处理衬底的装置。 该设备包括处理室，设置在处理室中的衬底支撑件，设置在衬底支撑件下方的处理室中的屏蔽构件以及耦合到处理室的盖组件。 盖组件包括耦合到电源的导电气体分配器和通过电绝缘体与导电气体分配器和室主体分离的电极。 电极也耦合到电源。 衬底支撑件形成有允许很少偏离平行度的刚度。 屏蔽构件对室主体的下部的基板传送开口进行热屏蔽。 泵送气室位于基板支撑处理位置下方并与其间隔开。