公开(公告)号：US08754438B2

公开(公告)日：2014-06-17

申请号：US13400097

申请日：2012-02-19

申请人： Ya-Wen Lin ,  Shih-Cheng Huang ,  Po-Min Tu ,  Chia-Hung Huang ,  Shun-Kuei Yang

发明人： Ya-Wen Lin ,  Shih-Cheng Huang ,  Po-Min Tu ,  Chia-Hung Huang ,  Shun-Kuei Yang

IPC分类号： H01L33/62

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/145 ,  H01L33/38 ,  H01L33/382

摘要： An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.

摘要翻译： LED包括衬底，缓冲层，外延层和导电层。 外延层包括第一N型外延层，第二N型外延层和夹在第一和第二N型外延层之间的图案化沟槽的阻挡层。 第一和第二N型外延层经由图案化的沟槽彼此接触。 因此，LED具有均匀的电流分布和更大的发光面积。 还提供了一种用于LED的制造方法。

公开(公告)号：US08604503B2

公开(公告)日：2013-12-10

申请号：US13600137

申请日：2012-08-30

申请人： Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Ya-Wen Lin ,  Shun-Kuei Yang

发明人： Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Ya-Wen Lin ,  Shun-Kuei Yang

IPC分类号： H01L33/22

CPC分类号： H01L33/58 ,  H01L33/10 ,  H01L33/22 ,  H01L33/32

摘要： A light emitting diode includes a substrate, a transitional layer on the substrate and an epitaxial layer on the transitional layer. The transitional layer includes a planar area with a flat top surface and a patterned area with a rugged top surface. An AlN material includes a first part consisting of a plurality of spheres and a second part consisting of a plurality of slugs. The spheres are on a top surface of the transitional layer, both at the planar area and the patterned area. The slugs are in grooves defined in the patterned area. Air gaps are formed between the slugs and a bottom surface of the epitaxial layer. The spheres and slugs of the AlN material help reflection of light generated by the epitaxial layer to a light output surface of the LED.

摘要翻译： 发光二极管包括衬底，衬底上的过渡层和过渡层上的外延层。 过渡层包括具有平坦顶表面的平坦区域和具有粗糙顶表面的图案区域。 AlN材料包括由多个球体组成的第一部分和由多个球团组成的第二部分。 球体在平坦区域和图案化区域处于过渡层的顶表面上。 s条位于图案区域中限定的凹槽中。 在s条和外延层的底表面之间形成气隙。 AlN材料的球体和块状物有助于将由外延层产生的光反射到LED的光输出表面。

公开(公告)号：US08501582B2

公开(公告)日：2013-08-06

申请号：US12975235

申请日：2010-12-21

申请人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

发明人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

IPC分类号： H01L21/76

CPC分类号： H01L29/06 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02614 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/12 ,  H01L33/20

摘要： A semiconductor structure includes a Si substrate, a supporting layer and a blocking layer formed on the substrate and an epitaxy layer formed on the supporting layer. The supporting layer defines a plurality of grooves therein to receive the blocking layer. The epitaxy layer is grown from the supporting layer. A plurality of slots is defined in the epitaxy layer and over the blocking layer. The epitaxy layer includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A method for manufacturing the semiconductor structure is also disclosed.

摘要翻译： 半导体结构包括Si衬底，支撑层和形成在衬底上的阻挡层和形成在支撑层上的外延层。 支撑层在其中限定多个凹槽以接收阻挡层。 外延层从支撑层生长。 在外延层中和阻挡层上限定多个槽。 外延层包括N型半导体层，发光层和P型半导体层。 还公开了半导体结构的制造方法。

公开(公告)号：US08461619B2

公开(公告)日：2013-06-11

申请号：US13397688

申请日：2012-02-16

申请人： Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang

发明人： Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/42 ,  H01L2933/0016

摘要： An LED chip includes a substrate, a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first electrode and a second electrode formed on the substrate in sequence. A surface of the first type semiconductor layer away from the substrate comprises an exposed first area and a second area covered by the light-emitting layer. The first electrode is formed on the exposed first area of the substrate. A number of recesses are defined in the second area of the surface of the first type semiconductor layer. The recesses are spaced apart from each other and arranged in sequence in a direction away from the first electrode; depths of the recesses gradually decrease following an increase of a distance between the recesses and the first electrode. The second electrode is formed on the second type semiconductor layer.

摘要翻译： LED芯片依次包括基板，第一类型半导体层，发光层，第二类型半导体层，第一电极和第二电极。 离开衬底的第一类型半导体层的表面包括暴露的第一区域和被发光层覆盖的第二区域。 第一电极形成在基板的暴露的第一区域上。 在第一类型半导体层的表面的第二区域中限定多个凹部。 凹部彼此间隔开并且沿远离第一电极的方向依次布置; 随着凹部和第一电极之间的距离的增加，凹部的深度逐渐减小。 第二电极形成在第二类型半导体层上。

公开(公告)号：US08450749B2

公开(公告)日：2013-05-28

申请号：US12986186

申请日：2011-01-07

申请人： Po-Min Tu ,  Shih-Cheng Huang ,  Shun-Kuei Yang ,  Chia-Hung Huang

发明人： Po-Min Tu ,  Shih-Cheng Huang ,  Shun-Kuei Yang ,  Chia-Hung Huang

IPC分类号： H01L33/30 ,  H01L33/44

CPC分类号： H01L33/12 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02661 ,  H01L33/007

摘要： A light emitting element includes a substrate, a GaN layer formed on the substrate, a first low refractive index semiconductor layer formed on the GaN layer, and a lighting structure having a high refractive index formed on the first low refractive index semiconductor layer. A second low refractive index semiconductor layer is embedded in the first low refractive index semiconductor layer. The first low refractive index semiconductor layer and the GaN layer exhibit a lattice mismatch therebetween.

摘要翻译： 发光元件包括衬底，形成在衬底上的GaN层，形成在GaN层上的第一低折射率半导体层和形成在第一低折射率半导体层上的具有高折射率的点亮结构。 第二低折射率半导体层嵌入在第一低折射率半导体层中。 第一低折射率半导体层和GaN层之间呈现晶格失配。

公开(公告)号：US08536590B2

公开(公告)日：2013-09-17

申请号：US13113082

申请日：2011-05-23

申请人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

发明人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

IPC分类号： H01L29/18

CPC分类号： H01L25/0753 ,  H01L33/62 ,  H01L2224/16

摘要： A light emitting element package includes a substrate, at least two light emitting element modules and an encapsulation member. The substrate includes a circuit layer. The circuit layer includes a plurality of solder pads. The at least two light emitting element modules are mounted on the substrate. Each of the at least two light emitting element modules includes a plurality of light emitting elements. Each light emitting element of the at least two light emitting element modules is electrically coupled to neighboring light emitting element in serial through the solder pads. The at least two light emitting element modules are reversely arranged. The encapsulation member is configured to encapsulate the at least two light emitting element modules on the substrate.

摘要翻译： 发光元件封装包括衬底，至少两个发光元件模块和封装构件。 基板包括电路层。 电路层包括多个焊盘。 至少两个发光元件模块安装在基板上。 所述至少两个发光元件模块中的每一个包括多个发光元件。 所述至少两个发光元件模块的每个发光元件通过所述焊盘电连接到相邻的发光元件。 至少两个发光元件模块相反地布置。 封装构件被构造成将至少两个发光元件模块封装在基板上。

公开(公告)号：US08519419B2

公开(公告)日：2013-08-27

申请号：US13171472

申请日：2011-06-29

申请人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

发明人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/007 ,  H01L33/12 ,  H01L33/382 ,  H01L33/46

摘要： A semiconductor light-emitting structure includes a silicon substrate, a distributed Bragg reflector, a semiconductor structures layer and an epitaxy connecting layer. The silicon substrate has a top surface. The distributed Bragg reflector is formed on the top surface of the silicon substrate. The semiconductor structures layer is configured for emitting light. The epitaxy connecting layer is placed between the distributed Bragg reflector and the semiconductor structures layer. Grooves extend from the semiconductor structures layer through the epitaxy connecting layer and the distributed Bragg reflector to reach the semiconductor structures layer.

摘要翻译： 半导体发光结构包括硅衬底，分布式布拉格反射器，半导体结构层和外延连接层。 硅衬底具有顶表面。 分布式布拉格反射器形成在硅衬底的顶表面上。 半导体结构层被配置为发光。 外延连接层放置在分布式布拉格反射器和半导体结构层之间。 沟槽从半导体结构层延伸穿过外延连接层和分布式布拉格反射器到达半导体结构层。

公开(公告)号：US20130032779A1

公开(公告)日：2013-02-07

申请号：US13457431

申请日：2012-04-26

申请人： Chia-Hung HUANG ,  Shih-Cheng Huang ,  Po-Min TU ,  Shun-Kuei YANG ,  Ya-Wen LIN

发明人： Chia-Hung HUANG ,  Shih-Cheng Huang ,  Po-Min TU ,  Shun-Kuei YANG ,  Ya-Wen LIN

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/46

CPC分类号： H01L33/007 ,  H01L21/76856 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/22

摘要： A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

摘要翻译： 发光二极管（LED）包括依次设置在基板上的基板，外延层和氮化铝（AlN）层。 AlN层包括彼此分离的多个叠层，其中外延层完全覆盖AlN层的多个叠层。 具有多个堆叠的AlN层通过LED的顶部平面反射向上反射由外延层产生的向上的光并且朝向衬底向下反射到LED的外部。 还公开了一种用于形成LED的方法。

公开(公告)号：US08916400B2

公开(公告)日：2014-12-23

申请号：US13457431

申请日：2012-04-26

申请人： Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Ya-Wen Lin

发明人： Chia-Hung Huang ,  Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Ya-Wen Lin

IPC分类号： H01L33/10 ,  H01L33/00 ,  H01L21/768 ,  H01L33/22

CPC分类号： H01L33/007 ,  H01L21/76856 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/22

摘要： A light emitting diode (LED) comprises a substrate, an epitaxial layer and an aluminum nitride (AlN) layer sequentially disposed on the substrate. The AlN layer comprises a plurality of stacks separated from each other, wherein the epitaxial layer entirely covers the plurality of stacks of the AlN layer. The AlN layer with a plurality of stacks reflects upwardly light generated by the epitaxial layer and downwardly toward the substrate to an outside of LED through a top plan of the LED. A method for forming the LED is also disclosed.

摘要翻译： 发光二极管（LED）包括依次设置在基板上的基板，外延层和氮化铝（AlN）层。 AlN层包括彼此分离的多个叠层，其中外延层完全覆盖AlN层的多个叠层。 具有多个堆叠的AlN层通过LED的顶部平面反射向上反射由外延层产生的向上的光并且朝向衬底向下反射到LED的外部。 还公开了一种用于形成LED的方法。

公开(公告)号：US08563340B2

公开(公告)日：2013-10-22

申请号：US13216244

申请日：2011-08-24

申请人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

发明人： Shih-Cheng Huang ,  Po-Min Tu ,  Shun-Kuei Yang ,  Chia-Hung Huang

IPC分类号： H01L21/00 ,  H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/0095 ,  H01L33/46

摘要： A method for manufacturing light emitting chips includes steps of: providing a substrate having a plurality of separate epitaxy islands thereon, wherein the epitaxy islands are spaced from each other by channels; filling the channels with an insulation material; sequentially forming a reflective layer, a transition layer and a base on the insulation material and the epitaxy islands; removing the substrate and the insulation material to expose the channels; and cutting the reflective layer, the transition layer and the base to form a plurality of individual chips along the channels.

摘要翻译： 制造发光芯片的方法包括以下步骤：提供其上具有多个分离的外延岛的衬底，其中所述外延岛通过沟道彼此间隔开; 用绝缘材料填充通道; 在绝缘材料和外延岛上依次形成反射层，过渡层和基底; 去除衬底和绝缘材料以暴露通道; 并且切割反射层，过渡层和基底，以沿通道形成多个独立的芯片。