摘要:
A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.
摘要:
A method is presented for making a polycrystalline thin film (B) by depositing particles emitted from a target (36) on a substrate base (A) to form the film (B) constituted by the target material while concurrently irradiating the depositing particles with an ion beam generated by an ion source (39) at an angle of incidence, in a range of 50 to 60 degrees to a normal (H) to a film surface, and maintaining a film temperature at less than 300 degrees Celsius. This method is effective in producing an excellent alignment of crystal axes of the grains in the film when the film thickness exceeds 200 nm. The target material includes yttrium-stabilized zirconia but other material can also be used. A layer (C) of a superconducting substance formed on top of the polycrystalline thin film (B) produces a superconducting film (22) exhibiting excellent superconducting properties.
摘要:
A chemical vapor deposition (CVD) reactor for forming a film at the surface of a base material, and a production method for an oxide superconductive conductor using this CVD reactor, are disclosed. The CVD reactor is provided with a processing chamber, a material gas supply mechanism which supplies material gas into the processing chamber, and a gas exhaust mechanism which vents gas from inside the processing chamber. The processing chamber is divided by partitions into a base material introduction section, a reaction chamber, and a base material guide-out section. A base material transit opening is formed in each partition, and a base material conveyance region is formed inside the reaction chamber passing through the base material introduction section, the reaction chamber and the base material guide-out section. The material gas supply mechanism is provided with a material gas supply source and a gas disperser and is connected to the material gas supply source. The gas exhaust mechanism is equipped with gas exhaust holes provided at both sides of the base material conveyance region opposite the side where the gas diffuser is disposed, and with a gas venter connected to the gas exhaust holes. The gas diffuser and the gas exhaust holes oppose each other with the base material conveyance region therebetween. The CVD reactor may be used to produce an oxide superconductive conductor by forming a superconductive layer at the surface of a base material while adjusting the flow of gas around the base material.
摘要:
A method of fabricating a superconductive electrical conductor of Nb.sub.3 Sn type comprises a step of covering an elongated core member made of Nb with a covering member made of a third element selected from the group consisting of Ti, Ta, In, Hf, Al and Si. The core member covered with the covering member is covered with a tubular matrix made of a Cu-Sn alloy or a combination of Cu with Sn to form a composite wire element. Such wire elements are assembled in a tubular matrix made of a Cu-Sn alloy, Cu or a combination of Cu with Sn and reduced in diameter to form a multi-core composite wire element having a desired diameter. The assembling and reducing processing is effected at least one to form a multi-core composite wire which is then subjected to a diffusion heat-treatment to form an intermetallic compound of Nb.sub.3 Sn and the third element in the peripheral portion of the core member.
摘要:
An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
摘要:
A method for producing an oxide superconducting composite wire is disclosed, which comprises the steps of: (a) molding a powdered oxide superconductor material to form a wire; (b) heat treating the wire in an oxygen atmosphere thereby forming the wire into an oxide superconducting member; (c) forming a non-oxidizing metal intermediate layer on a surface of the oxide superconducting member; (d) bundling a plurality of the oxide superconducting members containing the intermediate layer; (e) inserting the bundled oxide superconducting members into an oxidizing metal support tube; and (f) drawing the product of step (e) to reduce its diameter and heat-treating it.
摘要:
The invention relates to a superconductor manufacturing method and a superconductor manufactured by the method. More particularly, the invention is concerned wih an oxide superconductor of lamellar perovskite type and a method of manufacturing the same having extemely high critical temperature and critical current density as compared with conventional alloy superconductors or intermetallic compound superconductos. The superconductor is expressed byA-B-Cu-OwhereA represents at least one of elements of the group IIIa in the periodic table; andB represents at least one of elements of the group IIa in the periodic table,wherein at least one A and B consists of two elements belonging to the same group.The superconductor is manufactured by the steps of:(a) mixing powder of a compound containing at least one of elements of the group IIIa in the periodic table, powder of a compound containing at least one of elements of the group IIa in the periodic table, powder of a compound containing a homologous element of at least one of elements of the groups IIIa and IIa in the periodic table, and powder of copper oxide with each other in such a manner that a ratio in number of atoms among the at least one element of the group IIIa, the at least one element of the group IIa, Cu and O is brought to (0.1 to 2.0) : (0.1 to 3.0) : 1 : (1 to 4), to obtain raw material powder; and(b) sintering the raw material powder at a temperature in a range of from 800 to 1100 degrees C for 1 to 100 hours within an atmosphere in which oxygen concentration is at least 50%.
摘要:
A method of producing a superconductor including a superconductive oxide. At least one material is pressed for forming a filling material, the at least one material being selected from the group consisting of a starting material powder of the superconductive oxide, a powder of the superconductive oxide and a compact made of the starting material powder and/or the superconductive oxide powder, for forming a filling material. The filling material is charged into a metallic pipe to form a preform. The preform is moved along an axis thereof. During moving, the preform is swaged perpendicularly to the axis thereof to form a composite having a metallic sheath, made of the metallic pipe, and a core sheathed with the metallic sheath. The core of the composite is heated for producing the superconductive oxide.
摘要:
An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.
摘要:
An insulating layer (3) having an opening portion (3a) at a position conformable to an electrode pad (2) is formed. Next, a resin projection portion (4) is formed on the insulating layer (3). Thereafter, a resist film is formed which has opening portions made in regions conformable to the opening portion (3a), the resin projection portion (4) and the region sandwiched therebetween. A Cu plating layer (6) is formed by electrolytic copper plating, using the resist film as a mask.