Producing method of light emitting diode device and light emitting diode element
    1.
    发明授权
    Producing method of light emitting diode device and light emitting diode element 有权
    发光二极管器件和发光二极管元件的生产方法

    公开(公告)号:US08680557B2

    公开(公告)日:2014-03-25

    申请号:US13431240

    申请日:2012-03-27

    IPC分类号: H01L33/00 H01L21/00

    摘要: A method for producing a light emitting diode device includes the steps of preparing a phosphor layer formed in a sheet state; forming a light semiconductor layer on one surface in a thickness direction of the phosphor layer; forming an electrode portion on one surface of the light semiconductor layer; forming an encapsulating resin layer containing a light reflecting component so as to cover the light semiconductor layer and the electrode portion; producing the light emitting diode element by partially removing the encapsulating resin layer so as to expose one surface of the electrode portion; and allowing the electrode portion to be electrically connected to the terminal, so that the light emitting diode element is flip-chip mounted on the base board.

    摘要翻译: 一种发光二极管器件的制造方法,其特征在于,具有:制作以片状形成的荧光体层的工序; 在所述荧光体层的厚度方向的一个表面上形成光半导体层; 在所述光半导体层的一个表面上形成电极部分; 形成包含光反射部件的封装树脂层,以覆盖所述光半导体层和所述电极部分; 通过部分地去除封装树脂层来制造发光二极管元件,以暴露电极部分的一个表面; 并且允许电极部分电连接到端子,使得发光二极管元件倒装芯片安装在基板上。

    PRODUCING METHOD OF LIGHT EMITTING DIODE DEVICE AND LIGHT EMITTING DIODE ELEMENT
    3.
    发明申请
    PRODUCING METHOD OF LIGHT EMITTING DIODE DEVICE AND LIGHT EMITTING DIODE ELEMENT 有权
    发光二极管器件和发光二极管元件的生产方法

    公开(公告)号:US20120248485A1

    公开(公告)日:2012-10-04

    申请号:US13431240

    申请日:2012-03-27

    IPC分类号: H01L33/40 H01L33/60

    摘要: A method for producing a light emitting diode device includes the steps of preparing a phosphor layer formed in a sheet state; forming a light semiconductor layer on one surface in a thickness direction of the phosphor layer; forming an electrode portion on one surface of the light semiconductor layer; forming an encapsulating resin layer containing a light reflecting component so as to cover the light semiconductor layer and the electrode portion; producing the light emitting diode element by partially removing the encapsulating resin layer so as to expose one surface of the electrode portion; and allowing the electrode portion to be electrically connected to the terminal, so that the light emitting diode element is flip-chip mounted on the base board.

    摘要翻译: 一种发光二极管器件的制造方法,其特征在于,具有:制作以片状形成的荧光体层的工序; 在所述荧光体层的厚度方向的一个表面上形成光半导体层; 在所述光半导体层的一个表面上形成电极部分; 形成包含光反射部件的封装树脂层,以覆盖所述光半导体层和所述电极部分; 通过部分地去除封装树脂层来制造发光二极管元件,以暴露电极部分的一个表面; 并且允许电极部分电连接到端子,使得发光二极管元件倒装芯片安装在基板上。

    Light emitting diode device and producing method thereof
    4.
    发明授权
    Light emitting diode device and producing method thereof 有权
    发光二极管装置及其制造方法

    公开(公告)号:US08809900B2

    公开(公告)日:2014-08-19

    申请号:US13429681

    申请日:2012-03-26

    摘要: A method for producing a light emitting diode device includes the steps of preparing a base board; allowing a light semiconductor layer where an electrode portion is provided at one side in a thickness direction to be disposed in opposed relation to the base board, and the electrode portion to be electrically connected to a terminal, so that the light semiconductor layer is flip-chip mounted on the base board; forming an encapsulating resin layer containing a light reflecting component at the other side of the base board so as to cover the light semiconductor layer and the electrode portion; removing the other side portion of the encapsulating resin layer so as to expose the light semiconductor layer; and forming a phosphor layer formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer.

    摘要翻译: 一种发光二极管装置的制造方法,其特征在于,具备准备基板的工序, 允许在与厚度方向一侧设置电极部分的光半导体层相对于基板设置,并且电极部分与端子电连接,使得光半导体层被翻转, 芯片安装在基板上; 在所述基板的另一侧形成包含光反射部件的封装树脂层,以覆盖所述光半导体层和所述电极部分; 去除封装树脂层的另一侧部分以暴露光半导体层; 以及形成为片状状的荧光体层,以便与所述光半导体层的另一个表面接触。