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    Compound semiconductor device with nitride
    6.
    发明授权
    Compound semiconductor device with nitride 失效
    具有氮化物的化合物半导体器件

    公开(公告)号：US5693963A

    公开(公告)日：1997-12-02

    申请号：US526700

    申请日：1995-09-11

    申请人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

    发明人： Hidetoshi Fujimoto ,  Koichi Nitta ,  Masayuki Ishikawa ,  Hideto Sugawara ,  Yoshihiro Kokubun ,  Masahiro Yamamoto

    IPC分类号： H01L33/00 ,  H01L33/32

    CPC分类号： H01L33/325 ,  H01L33/007

    摘要： A light emitting diode is arranged on a sapphire substrate. The light emitting diode includes an n-GaN layer, an n-InGaN light-emitting layer, a p-AlGaN layer and a P-GaN layer, which are grown through vapor phase growth in this sequence. Within the p-GaN layer and p-AlGaN layer, 1.times.10.sup.20 cm.sup.-3 of Mg and 2.times.10.sup.19 cm.sup.-3 of Mg are contained, respectively. Within each of the n-GaN layer and n-InGaN light-emitting layer, 5.times.10.sup.18 cm.sup.-3 of hydrogen is contained, thereby preventing Mg from diffusing therein from the p-GaN layer and p-AlGaN layer.

    摘要翻译： 发光二极管布置在蓝宝石衬底上。 发光二极管包括以这种顺序气相生长生长的n-GaN层，n-InGaN发光层，p-AlGaN层和P-GaN层。 在p-GaN层和p-AlGaN层内，分别含有1×10 20 cm -3的Mg和2×10 19 cm -3的Mg。 在n-GaN层和n-InGaN发光层的每一个中，含有5×10 18 cm -3的氢，从而防止Mg从p-GaN层和p-AlGaN层扩散。

    Double-heterostructure semiconductor with mesa stripe waveguide
    7.
    发明授权
    Double-heterostructure semiconductor with mesa stripe waveguide 失效
    双异质结半导体与台面条纹波导

    公开(公告)号：US4949349A

    公开(公告)日：1990-08-14

    申请号：US279816

    申请日：1988-12-05

    申请人： Yasuo Ohba ,  Niyoko Watanabe ,  Hideto Sugawara ,  Masayuki Ishikawa ,  Yukio Watanabe ,  Motoyuki Yamamoto

    发明人： Yasuo Ohba ,  Niyoko Watanabe ,  Hideto Sugawara ,  Masayuki Ishikawa ,  Yukio Watanabe ,  Motoyuki Yamamoto

    IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/32325

    摘要： A double-heterostructure semiconductor laser is disclosed which has a semiconductive substrate of a first conductivity type made of III-V compound semiconductor material, a first semiconductive cladding layer of the first conductivity type disposed above the substrate, an active layer made of a semiconductor film provided on said cladding layer to serve as a light emission layer, and a second semiconductive cladding layer of a second conductivity type provided on the active layer to define a light waveguide channel of the laser. The second cladding layer is made of a compound semiconductor containing indium, phosphorus, and aluminum. A contact layer section is provided on the second cladding layer to cover the light waveguide channel. The contact layer is made of a compound semiconductor material containing gallium and arsenic, and has a band gap discontinuity at a boundary region of the light waveguide channel to form a barrier which serves to effectively seal current carriers in the waveguide channel, while the laser is emitting a laser light. This contact layer may also serve as a current-blocking layer.

    Double-heterostructure semiconductor with mesa stripe waveguide
    8.
    发明授权
    Double-heterostructure semiconductor with mesa stripe waveguide 失效
    双异质结半导体与台面条纹波导

    公开(公告)号：US4809287A

    公开(公告)日：1989-02-28

    申请号：US83189

    申请日：1987-08-10

    申请人： Yasuo Ohba ,  Miyoko Watanabe ,  Hideto Sugawara ,  Masayuki Ishikawa ,  Yukio Watanabe ,  Motoyuki Yamamoto

    发明人： Yasuo Ohba ,  Miyoko Watanabe ,  Hideto Sugawara ,  Masayuki Ishikawa ,  Yukio Watanabe ,  Motoyuki Yamamoto

    IPC分类号： H01S5/20 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/20 ,  H01S5/2231 ,  H01S5/32325

    摘要： Disclosed herein is a double-heterostructure semiconductor laser which emits a laser beam in a visible light range at ambient temperature. An active layer serving as a light emission layer is sandwiched between first and second cladding layers. The first cladding layer comprises an n type InAlP, while the second cladding layer comprises a p type InAlP and has a mesa stripe shape having slanted side surfaces so as to define a light waveguide channel of the semiconductor laser. Current-blocking layers are formed to cover the slanted side surfaces of the second cladding layer. The current-blocking layers comprise GaAs which is a III-V group compound semiconductor different from the III-V group compound semiconductor (i.e., InAlP) comprised in the second cladding layer. The composition ratio of aluminum in the second cladding layer is set not to be less than 0.4, whereby a Shottky barrier serving to inhibit or suppress a current leak in the light waveguide channel of the semiconductor laser is formed between the second cladding layer and the current-blocking layers.

    摘要翻译： 本文公开了一种在环境温度下发射可见光范围的激光束的双异质结构半导体激光器。 用作发光层的有源层夹在第一和第二覆层之间。 第一包层包括n型InAlP，而第二包层包括p型InAlP，并且具有具有倾斜侧表面的台面条状形状，以便限定半导体激光器的光波导通道。 形成电流阻挡层以覆盖第二覆层的倾斜侧表面。 电流阻挡层包括GaAs，其是与包含在第二覆层中的III-V族化合物半导体（即，InAlP）不同的III-V族化合物半导体。 第二包覆层中的铝的组成比设定为不小于0.4，由此形成用于抑制或抑制半导体激光器的光波导通道中的电流泄漏的肖特基势垒，在第二包覆层和电流 阻挡层。

    Semiconductor laser with mesa stripe waveguide structure
    9.
    发明授权
    Semiconductor laser with mesa stripe waveguide structure 失效
    半导体激光器与台面条纹波导结构

    公开(公告)号：US4792958A

    公开(公告)日：1988-12-20

    申请号：US19332

    申请日：1987-02-26

    申请人： Yasuo Ohba ,  Masayuki Ishikawa ,  Motoyuki Yamamoto ,  Yukio Watanabe ,  Hideto Sugawara

    发明人： Yasuo Ohba ,  Masayuki Ishikawa ,  Motoyuki Yamamoto ,  Yukio Watanabe ,  Hideto Sugawara

    IPC分类号： H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/323 ,  H01S3/19

    CPC分类号： H01S5/2231 ,  H01S5/0421 ,  H01S5/3054 ,  H01S5/32325 ,  Y10S148/095

    摘要： There is disclosed a semiconductor layer which can emit a continuous laser beam in a visible wavelength range. The laser has an n-GaAs substrate. On this substrate, an n-InGaAlP cladding layer, an active layer, and p-InGaAlP cladding layers are sequentially formed, thus forming a double hetero-structure. A mesa-shaped, upper cladding layer is provided, defining a laser beam-guiding channel. A thin p-InGaAlP contact layer and a mesa-shaped, p-GaAs contact layer are formed on the top surface of the upper cladding layer. Two n-type semiconductive, current-blocking layers cover the slanted sides of the upper, mesa-shaped cladding layer and also the contact layer. They are made of the same n-GaAs compound semiconductor material as the substrate.

    摘要翻译： 公开了可发射可见波长范围的连续激光束的半导体层。 激光器具有n-GaAs衬底。 在该基板上依次形成n-InGaAlP包覆层，有源层和p-InGaAlP覆盖层，形成双异质结构。 提供了台面形的上包层，其限定了激光束引导通道。 在上包层的顶表面上形成薄的p-InGaAlP接触层和台面形状的p-GaAs接触层。 两个n型半导体电流阻挡层覆盖上部台阶形覆层的倾斜侧面以及接触层。 它们由与衬底相同的n-GaAs化合物半导体材料制成。