公开(公告)号：US20130270682A1

公开(公告)日：2013-10-17

申请号：US13444674

申请日：2012-04-11

申请人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chih-Hua Chen ,  Chen-Shien Chen ,  Tin-Hao Kuo

发明人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chih-Hua Chen ,  Chen-Shien Chen ,  Tin-Hao Kuo

IPC分类号： H01L25/065 ,  H01L21/98

CPC分类号： H01L25/50 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/11002 ,  H01L2224/11003 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/73267 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  Y02P80/30 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/81805

摘要： Methods and apparatus for package on package structures having stud bump through via interconnections. A structure includes an interconnect layer having a plurality of through via assemblies each including at least one stud bump are formed on conductive pads; and encapsulant surrounding the through via assembly, a first redistribution layer formed over a surface of the encapsulant and coupled to the through via assemblies and carrying connectors, and a second redistribution layer over interconnect layer at the other end of the through via assemblies, the through via assemblies extending vertically through the interconnect layer. In an embodiment the interconnect layer is mounted using the connectors to a lower package substrate to form a package on package structure. A first integrated circuit device may be mounted on the second redistribution layer of the interconnect layer. Methods for forming the interconnect layer and the package on package structures are disclosed.

公开(公告)号：US08866285B2

公开(公告)日：2014-10-21

申请号：US13604239

申请日：2012-09-05

申请人： Yen-Chang Hu ,  Chang-Chia Huang ,  Ching-Wen Hsiao ,  Chen-Shien Chen

发明人： Yen-Chang Hu ,  Chang-Chia Huang ,  Ching-Wen Hsiao ,  Chen-Shien Chen

IPC分类号： H01L23/04 ,  H01L23/52

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49861 ,  H01L23/5389 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/83005

摘要： A device includes a polymer, a device die in the polymer, and a plurality of Through Assembly Vias (TAVs) extending from a top surface to a bottom surface of the polymer. A bulk metal feature is located in the polymer and having a top-view size greater than a top-view size of each of the plurality of TAVs. The bulk metal feature is electrically floating. The polymer, the device die, the plurality of TAVs, and the bulk metal feature are portions of a package.

摘要翻译： 该装置包括聚合物，聚合物中的器件管芯，以及从聚合物的顶表面延伸到底表面的多个通孔组件通孔（TAV）。 散装金属特征位于聚合物中并且具有大于多个TAV中的每一个的顶视图尺寸的顶视图尺寸。 散装金属特征是电浮动的。 聚合物，器件芯片，多个TAV和体金属特征是封装的部分。

公开(公告)号：US20140070422A1

公开(公告)日：2014-03-13

申请号：US13608946

申请日：2012-09-10

申请人： Ching-Wen Hsiao ,  Chen-Shien Chen ,  Wei Sen Chang ,  Yen-Chang Hu

发明人： Ching-Wen Hsiao ,  Chen-Shien Chen ,  Wei Sen Chang ,  Yen-Chang Hu

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L25/0657 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/481 ,  H01L23/50 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/538 ,  H01L23/5389 ,  H01L23/64 ,  H01L24/19 ,  H01L24/24 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24195 ,  H01L2224/2518 ,  H01L2224/73267 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00

摘要： A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.

摘要翻译： 提供半导体器件和制造方法。 特别地，提供了使用具有通孔和/或其中形成的集成无源器件的块的例如分立连接块的半导体器件。 诸如本文公开的那些实施例可以用于PoP应用中。 在一个实施例中，半导体器件包括模具和封装在模制化合物中的连接块。 可以在模具，连接块和模塑料的表面上形成互连层。 一个或多个管芯和/或封装可以附接到互连层。

公开(公告)号：US08816507B2

公开(公告)日：2014-08-26

申请号：US13559153

申请日：2012-07-26

申请人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chen-Shien Chen

发明人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chen-Shien Chen

IPC分类号： H01L23/48

CPC分类号： H01L21/566 ,  H01L21/02288 ,  H01L21/02356 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/19 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/04105 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2225/1035 ,  H01L2924/181 ,  H01L2924/00

摘要： A device includes a device die and a plurality of metal posts at a surface of the device die and electrically coupled to the device die. The device further includes a plurality of through-assembly vias (TAVs), a dam member between the device die and the plurality of TAVs, and a polymer layer encompassing the device die, the plurality of metal posts, the plurality of TAVs, and the dam member.

摘要翻译： 一种器件包括器件裸片和在器件裸片的表面处的多个金属柱，并且电耦合到器件裸片。 该装置还包括多个通过组装通孔（TAV），在器件管芯和多个TAV之间的阻挡构件，以及包围器件管芯，多个金属管柱，多个TAV以及 水坝成员

公开(公告)号：US20140061937A1

公开(公告)日：2014-03-06

申请号：US13604239

申请日：2012-09-05

申请人： Yen-Chang Hu ,  Chang-Chia Huang ,  Ching-Wen Hsiao ,  Chen-Shien Chen

发明人： Yen-Chang Hu ,  Chang-Chia Huang ,  Ching-Wen Hsiao ,  Chen-Shien Chen

IPC分类号： H01L23/48 ,  H01L21/60

CPC分类号： H01L24/19 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49861 ,  H01L23/5389 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/12105 ,  H01L2224/16227 ,  H01L2224/19 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/97 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/83005

摘要： A device includes a polymer, a device die in the polymer, and a plurality of Through Assembly Vias (TAVs) extending from a top surface to a bottom surface of the polymer. A bulk metal feature is located in the polymer and having a top-view size greater than a top-view size of each of the plurality of TAVs. The bulk metal feature is electrically floating. The polymer, the device die, the plurality of TAVs, and the bulk metal feature are portions of a package.

摘要翻译： 该装置包括聚合物，聚合物中的器件管芯，以及从聚合物的顶表面延伸到底表面的多个通孔组件通孔（TAV）。 散装金属特征位于聚合物中并且具有大于多个TAV中的每一个的顶视图尺寸的顶视图尺寸。 散装金属特征是电浮动的。 聚合物，器件芯片，多个TAV和体金属特征是封装的部分。

公开(公告)号：US09165887B2

公开(公告)日：2015-10-20

申请号：US13608946

申请日：2012-09-10

申请人： Ching-Wen Hsiao ,  Chen-Shien Chen ,  Wei Sen Chang ,  Yen-Chang Hu

发明人： Ching-Wen Hsiao ,  Chen-Shien Chen ,  Wei Sen Chang ,  Yen-Chang Hu

IPC分类号： H01L23/34 ,  H01L23/48 ,  H01L23/538 ,  H01L23/64 ,  H01L23/00 ,  H01L25/065 ,  H01L23/50

CPC分类号： H01L25/0657 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/481 ,  H01L23/50 ,  H01L23/5222 ,  H01L23/528 ,  H01L23/538 ,  H01L23/5389 ,  H01L23/64 ,  H01L24/19 ,  H01L24/24 ,  H01L2221/68327 ,  H01L2221/68359 ,  H01L2224/0231 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24195 ,  H01L2224/2518 ,  H01L2224/73267 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06548 ,  H01L2225/06572 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/00

摘要： A semiconductor device and a method of manufacture are provided. In particular, a semiconductor device using blocks, e.g., discrete connection blocks, having through vias and/or integrated passive devices formed therein are provided. Embodiments such as those disclosed herein may be utilized in PoP applications. In an embodiment, the semiconductor device includes a die and a connection block encased in a molding compound. Interconnection layers may be formed on surfaces of the die, the connection block and the molding compound. One or more dies and/or packages may be attached to the interconnection layers.

摘要翻译： 提供半导体器件和制造方法。 特别地，提供了使用具有通孔和/或其中形成的集成无源器件的块的例如分立连接块的半导体器件。 诸如本文公开的那些实施例可以用于PoP应用中。 在一个实施例中，半导体器件包括模具和封装在模制化合物中的连接块。 可以在模具，连接块和模塑料的表面上形成互连层。 一个或多个管芯和/或封装可以附接到互连层。

公开(公告)号：US08922005B2

公开(公告)日：2014-12-30

申请号：US13444674

申请日：2012-04-11

申请人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chih-Hua Chen ,  Chen-Shien Chen ,  Tin-Hao Kuo

发明人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chih-Hua Chen ,  Chen-Shien Chen ,  Tin-Hao Kuo

IPC分类号： H01L23/02 ,  H01L23/48

CPC分类号： H01L25/50 ,  H01L23/49816 ,  H01L23/5389 ,  H01L24/11 ,  H01L24/19 ,  H01L24/20 ,  H01L24/81 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/0231 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/11002 ,  H01L2224/11003 ,  H01L2224/1134 ,  H01L2224/12105 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/73267 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  Y02P80/30 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/81805

摘要： Methods and apparatus for package on package structures having stud bump through via interconnections. A structure includes an interconnect layer having a plurality of through via assemblies each including at least one stud bump are formed on conductive pads; and encapsulant surrounding the through via assembly, a first redistribution layer formed over a surface of the encapsulant and coupled to the through via assemblies and carrying connectors, and a second redistribution layer over interconnect layer at the other end of the through via assemblies, the through via assemblies extending vertically through the interconnect layer. In an embodiment the interconnect layer is mounted using the connectors to a lower package substrate to form a package on package structure. A first integrated circuit device may be mounted on the second redistribution layer of the interconnect layer. Methods for forming the interconnect layer and the package on package structures are disclosed.

摘要翻译： 封装结构上的封装结构的方法和装置，其具有穿过通孔互连的凸块凸块。 一种结构包括具有多个通孔组件的互连层，每个穿孔组件包括至少一个柱形突起，其在导电垫上形成; 以及围绕所述通孔组件的密封剂，形成在所述密封剂的表面上并且连接到所述通孔组件和承载连接器的第一再分布层，以及在所述通孔组件的另一端处的互连层上的第二再分布层， 通过组件垂直延伸穿过互连层。 在一个实施例中，使用连接器将互连层安装到下封装衬底以形成封装结构上的封装。 第一集成电路器件可以安装在互连层的第二再分配层上。 公开了在封装结构上形成互连层和封装的方法。

公开(公告)号：US20140042152A1

公开(公告)日：2014-02-13

申请号：US13569468

申请日：2012-08-08

申请人： Yen-Chang HU ,  Ching-Wen Hsiao ,  Chen-Shien CHEN

发明人： Yen-Chang HU ,  Ching-Wen Hsiao ,  Chen-Shien CHEN

IPC分类号： H05B6/64

CPC分类号： H01L21/67109 ,  H01L21/67115 ,  H05B6/806

摘要： A variable frequency microwave (VFM) device and a method for rectifying wafer warpage are provided. The variable frequency microwave (VFM) device includes a heater installed in the top wall of the chamber; and a cooler installed in proximity to the bottom wall of the chamber.

摘要翻译： 提供了一种变频微波（VFM）装置和整流晶圆翘曲的方法。 变频微波（VFM）装置包括安装在室顶部的加热器; 以及安装在室的底壁附近的冷却器。

公开(公告)号：US20140027901A1

公开(公告)日：2014-01-30

申请号：US13559153

申请日：2012-07-26

申请人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chen-Shien Chen

发明人： Yen-Chang Hu ,  Ching-Wen Hsiao ,  Chen-Shien Chen

IPC分类号： H01L23/498 ,  H01L21/56

CPC分类号： H01L21/566 ,  H01L21/02288 ,  H01L21/02356 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3121 ,  H01L24/19 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68372 ,  H01L2224/04105 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2225/06524 ,  H01L2225/06548 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2225/1035 ,  H01L2924/181 ,  H01L2924/00

摘要： A device includes a device die and a plurality of metal posts at a surface of the device die and electrically coupled to the device die. The device further includes a plurality of through-assembly vias (TAVs), a dam member between the device die and the plurality of TAVs, and a polymer layer encompassing the device die, the plurality of metal posts, the plurality of TAVs, and the dam member.

摘要翻译： 一种器件包括器件裸片和在器件裸片的表面处的多个金属柱，并且电耦合到器件裸片。 该装置还包括多个通过组装通孔（TAV），在器件管芯和多个TAV之间的阻挡构件，以及包围器件管芯，多个金属管柱，多个TAV以及 水坝成员

公开(公告)号：US09679836B2

公开(公告)日：2017-06-13

申请号：US13298102

申请日：2011-11-16

申请人： Ching-Wen Hsiao ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chen-Shien Chen ,  Chih-Hua Chen ,  Chen-Cheng Kuo

发明人： Ching-Wen Hsiao ,  Ming-Da Cheng ,  Chih-Wei Lin ,  Chen-Shien Chen ,  Chih-Hua Chen ,  Chen-Cheng Kuo

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L21/683 ,  H01L25/10 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L23/49816 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/49822 ,  H01L24/16 ,  H01L25/105 ,  H01L2221/68318 ,  H01L2221/68345 ,  H01L2221/68381 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/18161 ,  H01L2924/014 ,  H01L2924/00

摘要： A device includes a redistribution line, and a polymer region molded over the redistribution line. The polymer region includes a first flat top surface. A solder region is disposed in the polymer region and electrically coupled to the redistribution line. The solder region includes a second flat top surface not higher than the first flat top surface.