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    Method of producing N-alkylaminophenols
    1.
    发明授权
    Method of producing N-alkylaminophenols 失效
    生产N-烷基氨基酚的方法

    公开(公告)号：US5113018A

    公开(公告)日：1992-05-12

    申请号：US538719

    申请日：1990-06-15

    申请人： Yoshito Kurano ,  Masato Kawamura ,  Masahiro Kondo ,  Michio Tanaka ,  Sanehiro Yamamoto

    发明人： Yoshito Kurano ,  Masato Kawamura ,  Masahiro Kondo ,  Michio Tanaka ,  Sanehiro Yamamoto

    IPC分类号： C07C213/02

    CPC分类号： C07C213/02

    摘要： N-alkyl amino phenols, such as N-ethyl-m-amino phenol are produced in high yield and with high purity by reacting a divalent phenol, such as resorcinol, with an alkylamine, such as ethylamine, in the absence of catalyst and solvent, at a temperature of 120.degree.-210.degree. C. under elevated pressure in an inert gas atmosphere. In a first embodiment, the resulting reaction mixture is acidified to convert the N-alkylaminophenol to its water soluble salt and the resulting aqueous layer is separated from the oily layer. The aqueous layer is rendered alkaline to liberate N-alkylaminophenol as an oily layer. The N-alkyl-aminophenol oily layer is then separated from the aqueous layer and distilled. In an alternative embodiment, the reaction mixture resulting from the reaction between the divalent phenol and alkylamine is combined with an aqueous solution of an alkali to convert unreacted phenol to its water soluble salt while the product N-alkylaminophenol remains in an oily phase which is separated from the aqueous phase. An organic solvent is used as an extractant. The recovered N-alkylaminophenol organic solution is then distilled to recover N-alkylaminophenol. Purities of the recovered N-alkylaminophenol in excess of 95% can be achieved.

    Process for producing p,p'-biphenol
    2.
    发明授权
    Process for producing p,p'-biphenol 失效
    生产p，p'-联苯酚的方法

    公开(公告)号：US4891453A

    公开(公告)日：1990-01-02

    申请号：US247333

    申请日：1988-09-21

    申请人： Michio Tanaka ,  Yoshito Kurano ,  Katsuo Taniguchi ,  Masayasu Ishibashi

    发明人： Michio Tanaka ,  Yoshito Kurano ,  Katsuo Taniguchi ,  Masayasu Ishibashi

    IPC分类号： C07C37/07 ,  C07C37/50 ,  C07C39/15

    CPC分类号： C07C37/07 ,  C07C37/50

    摘要： A process is disclosed which is capable of producing p,p'-biphenol of high purity by the dealkylation reaction of 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl and which yet allows isobutene to be recovered in high yield. The process performs the dealkylation reaction of 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl in the presence of an acid catalyst using as a solvent a saturated hydrocarbon having a boiling point of 190.degree. C. or above, an alicyclic hydrocarbon having a boiling point of 190.degree. C. or above, a hydrocarbon with an iodine value of no more than 1, sulfolane, or a mixture of these solvents. Also disclosed is a process for producing p,p'-biphenol from a mixture of 2,6-di-t-butyl-phenol and 3,3',5,5'-tetra-t-butyl-4,4'-diphenoquinone or from a mixture of 2,6-di-t-butylphenol, 3,3',5,5'-tetra-t-butyl-4,4'-diphenoquinone and 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl. In this process, the synthesis of 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl by the redox reaction between 2,6-di-t-butylphenol and 3,3',5,5'-tetra-t-butyl-4,4'-diphenoquinone and the production of p,p'-biphenol by the dealkylation reaction of 3,3',5,5'-tetra-t-butyl-4,4'-dihydroxybiphenyl are performed at one stage in the presence of both an acid catalyst and a solvent at a temperature of 120.degree.-280.degree. C.

    Method of modifying porous film, modified porous film and use of same
    5.
    发明申请
    Method of modifying porous film, modified porous film and use of same 有权
    改性多孔膜的方法，改性多孔膜及其用途

    公开(公告)号：US20060040110A1

    公开(公告)日：2006-02-23

    申请号：US10526688

    申请日：2003-09-08

    申请人： Kazuo Kohmura ,  Shunsuke Oike ,  Takeshi Kubota ,  Masami Murakami ,  Yoshito Kurano

    发明人： Kazuo Kohmura ,  Shunsuke Oike ,  Takeshi Kubota ,  Masami Murakami ,  Yoshito Kurano

    IPC分类号： B05D1/40 ,  B32B13/04

    CPC分类号： H01L21/02126 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  Y10T428/31663

    摘要： The present invention relates to a method for modifying a porous film mainly having Si—O bonds wherein a thermal treatment is conducted without using a metal catalyst by bringing an organic silicon compound into contact with the porous film. The organic silicon compound includes one or more Si—X—Si bond unit (wherein X represents O, NR, CnH2n, or C6H4; R represents CmH2m+1 or C6H5; m is an integer between 1 and 6; and n is 1 or 2) and two or more Si-A bond units (wherein A represents H, OH, OCeH2e+1 or a halogen atom and can be the same or different within a single molecule; and e is an integer between 1 and 6). Since the porous film obtained by this method is excellent in the hydrophobic property and the mechanical strength, it can be used as an optically functional material or an electronically functional material. The porous film is especially useful as a semiconductor material, and can be preferably used as an interlayer insulating film in a semiconductor device.

    摘要翻译： 本发明涉及一种用于改性主要具有Si-O键的多孔膜的方法，其中通过使有机硅化合物与多孔膜接触而不使用金属催化剂进行热处理。 有机硅化合物包括一个或多个Si-X-Si键单元（其中X表示O，NR，C n H 2n H 2n或C 6， R 4表示C m H 2 m + 1或C 6 H 5， m是1和6之间的整数; n是1或2）和两个或更多个Si-A键单元（其中A表示H，OH，OC 2e + 1或卤素原子，并且可以在单分子内相同或不同; e为1至6之间的整数）。 由于通过该方法获得的多孔膜的疏水性和机械强度优异，因此可以用作光学功能材料或电子功能材料。 多孔膜特别可用作半导体材料，并且可以优选用作半导体器件中的层间绝缘膜。

    Method of modifying porous film, modified porous film and use of same
    6.
    发明授权
    Method of modifying porous film, modified porous film and use of same 有权
    改性多孔膜的方法，改性多孔膜及其用途

    公开(公告)号：US07807267B2

    公开(公告)日：2010-10-05

    申请号：US10526688

    申请日：2003-09-08

    申请人： Kazuo Kohmura ,  Shunsuke Oike ,  Takeshi Kubota ,  Masami Murakami ,  Yoshito Kurano

    发明人： Kazuo Kohmura ,  Shunsuke Oike ,  Takeshi Kubota ,  Masami Murakami ,  Yoshito Kurano

    IPC分类号： B32B9/04

    CPC分类号： H01L21/02126 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/31695 ,  Y10T428/31663

    摘要： The present invention relates to a method for modifying a porous film mainly having Si—O bonds wherein a thermal treatment is conducted without using a metal catalyst by bringing an organic silicon compound into contact with the porous film. The organic silicon compound includes one or more Si—X—Si bond unit (wherein X represents O, NR, CnH2n, or C6H4; R represents CmH2m+1 or C6H5; m is an integer between 1 and 6; and n is 1 or 2) and two or more Si-A bond units (wherein A represents H, OH, OCeH2e+1 or a halogen atom and can be the same or different within a single molecule; and e is an integer between 1 and 6). Since the porous film obtained by this method is excellent in the hydrophobic property and the mechanical strength, it can be used as an optically functional material or an electronically functional material. The porous film is especially useful as a semiconductor material, and can be preferably used as an interlayer insulating film in a semiconductor device.

    摘要翻译： 本发明涉及一种用于改性主要具有Si-O键的多孔膜的方法，其中通过使有机硅化合物与多孔膜接触而不使用金属催化剂进行热处理。 有机硅化合物包括一个或多个Si-X-Si键单元（其中X表示O，NR，C n H 2n或C 6 H 4; R表示C m H 2n + 1或C 6 H 5; m为1至6的整数; n为1或 2）和两个或更多个Si-A键单元（其中A表示H，OH，OCeH 2e + 1或卤素原子，并且在单分子内可以相同或不同; e为1至6之间的整数）。 由于通过该方法获得的多孔膜的疏水性和机械强度优异，因此可以用作光学功能材料或电子功能材料。 多孔膜特别可用作半导体材料，并且可以优选用作半导体器件中的层间绝缘膜。

    Method and Apparatus for Producing Porous Silica
    9.
    发明申请
    Method and Apparatus for Producing Porous Silica 审中-公开
    多孔二氧化硅生产方法和装置

    公开(公告)号：US20090179357A1

    公开(公告)日：2009-07-16

    申请号：US11989776

    申请日：2006-08-10

    申请人： Masami Murakami ,  Shunsuke Oike ,  Yoshito Kurano ,  Makoto Aritsuka ,  Hiroko Wachi

    发明人： Masami Murakami ,  Shunsuke Oike ,  Yoshito Kurano ,  Makoto Aritsuka ,  Hiroko Wachi

    IPC分类号： B29C67/00

    CPC分类号： H01L21/31695 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/02343 ,  H01L21/02348 ,  H01L21/02359 ,  H01L21/67207 ,  H01L21/67745

    摘要： There are provided a method for producing porous silica and a porous silica film having low specific dielectric constant and high mechanical strength, that are preferably applicable to optical functional materials, electronic functional materials or the like, and a method for producing an interlayer insulating film, a semiconductor material and a semiconductor apparatus and a producing apparatus, which use the porous silica film. A solution containing a hydrolysis-condensation product of alkoxysilanes and a surfactant is dried to form a composite to which are then applied in the following order an ultraviolet ray irradiation treatment and a hydrophobic treatment with the use of an organic silicon compound having an alkyl group. By forming the composite by drying the solution on a substrate, the porous silica film is obtained.

    摘要翻译： 提供一种多孔二氧化硅的制造方法和比较介电常数高，机械强度高的多孔二氧化硅膜，优选适用于光功能材料，电子功能材料等，以及制造层间绝缘膜的方法， 使用多孔二氧化硅膜的半导体材料和半导体装置及制造装置。 将包含烷氧基硅烷和表面活性剂的水解缩合产物的溶液干燥以形成复合材料，然后按照以下顺序施加紫外线照射处理和使用具有烷基的有机硅化合物的疏水处理。 通过在基材上干燥溶液形成复合体，得到多孔二氧化硅膜。

    Process for production of alkenyl substituted aromatic compound
    10.
    发明授权
    Process for production of alkenyl substituted aromatic compound 失效
    烯基取代芳族化合物的制备方法

    公开(公告)号：US4978789A

    公开(公告)日：1990-12-18

    申请号：US376929

    申请日：1989-07-10

    申请人： Katsuo Taniguchi ,  Shigeki Fujikawa ,  Yoshito Kurano

    发明人： Katsuo Taniguchi ,  Shigeki Fujikawa ,  Yoshito Kurano

    IPC分类号： C07C37/00 ,  C07C209/68

    CPC分类号： B01J23/862 ,  B01J23/825 ,  B01J23/835 ,  B01J23/8472 ,  B01J37/031 ,  C07C209/68 ,  C07C37/001 ,  B01J2523/00

    摘要： A process for producing an alkenyl substituted aromatic compound having the general formula (I): ##STR1## wherein Ar represents an aromatic ring, R.sup.1 represents an alkenyl group having 2 to 8 carbon atoms, p is 1, 2, or 3 provided that R.sup.1 may be the same or different when p is 2 or 3, R.sup.2 represents an alkyl group having 1 to 8 carbon atoms, q is 0, 1, or 2 provided that R.sup.2 may be the same or different when q is 2, X represents --OH or --NR.sup.3 R.sup.4 wherein R.sup.3 and R.sup.4 independently represent hydrogen or an alkyl group having 1 to 2 carbon atoms, n is 1 or 2, provided that the sum of p and q is 1, 2, or 3 comprising the step of catalytically dehydrogenating an alkyl substituted aromatic compound having the general formula (III): ##STR2## wherein R.sup.5 represents an alkyl group having 2 to 8 carbon atoms and Ar, R.sup.2, X, p, q, and n are the same as defined above, n is 1 or 2, provided that R.sup.5 may be the same or different when p is 2 or 3 in the presence of a catalyst comprising (a) at least one iron oxide as a main component and (b) at least one oxide of metals belonging to the group III, IV or V of the periodic table of atoms.This catalyst can produce an alkenyl substituted aromatic compound having a hydroxyl or amino group in the aromatic ring thereof from the dehydrogenation of the corresponding alkyl substituted aromatic compound at a high yield and high selectivity and has a prolonged catalyst life.

    摘要翻译： 一种制备具有通式（I）的烯基取代的芳族化合物的方法：其中Ar表示芳族环，R 1表示具有2至8个碳原子的链烯基，p是1,2或3 条件是当p为2或3时，R 1可以相同或不同，R 2表示具有1至8个碳原子的烷基，q为0,1或2，条件是当q为2时，R 2可以相同或不同， X表示-OH或-NR 3 R 4，其中R 3和R 4独立地表示氢或具有1至2个碳原子的烷基，n为1或2，条件是p和q之和为1,2或3，包括步骤 催化脱氢具有通式（III）的烷基取代的芳族化合物：其中R 5表示具有2至8个碳原子的烷基，Ar，R 2，X，p，q和n与 n为1或2，条件是当催化剂存在时p为2或3时，R 5可以相同或不同，所述催化剂包含（a）至少一种i 氧化物作为主要成分，和（b）属于元素周期表第III，IV或V族的金属的至少一种氧化物。 该催化剂可以以高产率和高选择性从相应的烷基取代的芳族化合物的脱氢产生其芳环中具有羟基或氨基的烯基取代的芳族化合物，并具有延长的催化剂寿命。