公开(公告)号：US08299666B2

公开(公告)日：2012-10-30

申请号：US12819678

申请日：2010-06-21

申请人： Yuji Shirakata ,  Dai Nakajima ,  Masahiko Fujita ,  Masaki Kato ,  Kazuyasu Sakamoto ,  Takuya Oga

发明人： Yuji Shirakata ,  Dai Nakajima ,  Masahiko Fujita ,  Masaki Kato ,  Kazuyasu Sakamoto ,  Takuya Oga

IPC分类号： H02K11/00 ,  H02K9/00 ,  H02K7/00

CPC分类号： H02P9/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/181 ,  H01L2924/1815 ,  H02K11/048 ,  H02K19/365 ,  H02P2101/45 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A dynamoelectric machine main body, power circuit modules and a field circuit module, and a control apparatus that has a heatsink that is prepared by die casting, and that is mounted integrally onto the dynamoelectric machine main body are included, the heatsink including a plurality of convex heat receiving portions that are disposed so as to project from a front surface of a base plate, and that have heat receiving surfaces, the power circuit modules and the field circuit module including seal main body portions that are constituted by an electrically insulating resin that seal switching elements so as to expose bottom surfaces of element heat radiating portions on reference surfaces that have a surface shape that corresponds to a shape of the heat receiving surfaces, and electrical insulation supporting layers being interposed between the bottom surfaces of the heat receiving surfaces and the element heat radiating portions.

摘要翻译： 电动机主体，电力电路模块和现场电路模块以及具有通过压铸制造的散热器并且整体安装在电动机械主体上的控制装置的散热器包括多个 凸形受热部，其从基板的前表面突出设置并具有受热面，所述电源电路模块和励磁电路模块包括由电绝缘树脂构成的密封主体部， 密封开关元件，以便露出具有与受热表面形状相对应的表面形状的参考表面上的元件散热部分的底表面，以及插入在热接收表面的底表面之间的电绝缘支撑层，以及 元件散热部分。

公开(公告)号：US20110175496A1

公开(公告)日：2011-07-21

申请号：US12819678

申请日：2010-06-21

申请人： Yuji SHIRAKATA ,  Dai Nakajima ,  Masahiko Fujita ,  Masaki Kato ,  Kazuyasu Sakamoto ,  Takuya Oga

发明人： Yuji SHIRAKATA ,  Dai Nakajima ,  Masahiko Fujita ,  Masaki Kato ,  Kazuyasu Sakamoto ,  Takuya Oga

IPC分类号： H02K7/00

CPC分类号： H02P9/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2924/181 ,  H01L2924/1815 ,  H02K11/048 ,  H02K19/365 ,  H02P2101/45 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

摘要： A dynamoelectric machine main body, power circuit modules and a field circuit module, and a control apparatus that has a heatsink that is prepared by die casting, and that is mounted integrally onto the dynamoelectric machine main body are included, the heatsink including a plurality of convex heat receiving portions that are disposed so as to project from a front surface of a base plate, and that have heat receiving surfaces, the power circuit modules and the field circuit module including seal main body portions that are constituted by an electrically insulating resin that seal switching elements so as to expose bottom surfaces of element heat radiating portions on reference surfaces that have a surface shape that corresponds to a shape of the heat receiving surfaces, and electrical insulation supporting layers being interposed between the bottom surfaces of the heat receiving surfaces and the element heat radiating portions.

摘要翻译： 电动机主体，电力电路模块和现场电路模块以及具有通过压铸制造的散热器并且整体安装在电动机械主体上的控制装置的散热器包括多个 凸形受热部，其从基板的前表面突出设置并具有受热面，所述电源电路模块和励磁电路模块包括由电绝缘树脂构成的密封主体部， 密封开关元件，以便露出具有与受热表面形状相对应的表面形状的参考表面上的元件散热部分的底表面，以及插入在热接收表面的底表面之间的电绝缘支撑层，以及 元件散热部分。

公开(公告)号：US20130307130A1

公开(公告)日：2013-11-21

申请号：US13980997

申请日：2011-06-09

申请人： Takuya Oga ,  Kazuyasu Sakamoto ,  Tsuyoshi Sugihara ,  Masaki Kato ,  Daisuke Nakashima ,  Tsuyoshi Jida ,  Gen Tada

发明人： Takuya Oga ,  Kazuyasu Sakamoto ,  Tsuyoshi Sugihara ,  Masaki Kato ,  Daisuke Nakashima ,  Tsuyoshi Jida ,  Gen Tada

IPC分类号： H01L23/495

CPC分类号： H01L23/4952 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L25/115 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/06181 ,  H01L2224/29201 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40179 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48699 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83143 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84138 ,  H01L2224/84143 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2224/92157 ,  H01L2224/92246 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2224/83205 ,  H01L2224/37099

摘要： A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.

摘要翻译： 提供一种半导体器件，其中第一引线（11）与第一焊料（51）与MOS-FET（21）的底部电极（23）接合，MOS-FET的顶部电极（22）为 与第二焊料（52）的内部引线（31）连接，内部引线与第三引线（53）与第二引线的突起（61）接合，并且第一引线，第二引线，MOS-FET和内部引线 引线使用密封树脂（41）整体模制，其中第一焊料和第二焊料分别包括位于其内的支撑部件（54）和（55），并且通过自对准来稳定内部引线和MOS-FET的位置。

公开(公告)号：US09401319B2

公开(公告)日：2016-07-26

申请号：US13980997

申请日：2011-06-09

申请人： Takuya Oga ,  Kazuyasu Sakamoto ,  Tsuyoshi Sugihara ,  Masaki Kato ,  Daisuke Nakashima ,  Tsuyoshi Jida ,  Gen Tada

发明人： Takuya Oga ,  Kazuyasu Sakamoto ,  Tsuyoshi Sugihara ,  Masaki Kato ,  Daisuke Nakashima ,  Tsuyoshi Jida ,  Gen Tada

IPC分类号： H01L23/48 ,  H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L25/11

CPC分类号： H01L23/4952 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/97 ,  H01L25/115 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/06181 ,  H01L2224/29201 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/30181 ,  H01L2224/32245 ,  H01L2224/37011 ,  H01L2224/4007 ,  H01L2224/40095 ,  H01L2224/40179 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48699 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83139 ,  H01L2224/8314 ,  H01L2224/83143 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/84138 ,  H01L2224/84143 ,  H01L2224/84205 ,  H01L2224/84801 ,  H01L2224/85205 ,  H01L2224/92157 ,  H01L2224/92246 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552 ,  H01L2224/83205 ,  H01L2224/37099

摘要： A semiconductor device is provided, in which a first lead (11) is joined with the bottom electrode (23) of a MOS-FET (21) with first solder (51), the top electrode (22) of the MOS-FET is joined with an internal lead (31) with second solder (52), the internal lead is joined with a projection (61) of a second lead with third solder (53), and the first lead, second lead, MOS-FET and internal lead are integrally molded using sealing resin (41), wherein the first solder and second solder include support members (54) and (55), respectively, located thereinside and positions of the internal lead and MOS-FET are stabilized by self-alignment.

摘要翻译： 提供一种半导体器件，其中第一引线（11）与第一焊料（51）与MOS-FET（21）的底部电极（23）接合，MOS-FET的顶部电极（22）为 与第二焊料（52）的内部引线（31）连接，内部引线与第三引线（53）与第二引线的突起（61）接合，并且第一引线，第二引线，MOS-FET和内部引线 引线使用密封树脂（41）整体模制，其中第一焊料和第二焊料分别包括位于其内的支撑部件（54）和（55），并且通过自对准来稳定内部引线和MOS-FET的位置。

公开(公告)号：US09129949B2

公开(公告)日：2015-09-08

申请号：US13881654

申请日：2011-02-09

申请人： Shinsuke Asada ,  Kenjiro Nagao ,  Dai Nakajima ,  Yuetsu Watanabe ,  Yoshihito Asao ,  Takuya Oga ,  Masaki Kato

发明人： Shinsuke Asada ,  Kenjiro Nagao ,  Dai Nakajima ,  Yuetsu Watanabe ,  Yoshihito Asao ,  Takuya Oga ,  Masaki Kato

IPC分类号： H01L23/495 ,  H01L23/12 ,  H01L23/00 ,  H01L23/36 ,  H01L23/31

CPC分类号： H01L23/49568 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40247 ,  H01L2224/4103 ,  H01L2224/41051 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83411 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power semiconductor module (100) includes: an electrode plate (2) in which a body portion (2a) and an external connection terminal portion (2b) are integrally formed, and the body portion (2a) is arranged on the same flat surface; a semiconductor chip (1) mounted on one surface (mounting surface) (2c) of the body portion (2a); and a resin package (3) in which the other surface (heat dissipation surface) (2d) of the body portion (2a) is exposed, and the body portion (2a) of the electrode plate (2) and the semiconductor chip (1) are sealed with resin. The heat dissipation surface (2d) is the same surface as the bottom (3a) of the resin package (3); and consequently, heat dissipation properties and reliability are improved and a reduction in size can be achieved.

摘要翻译： 功率半导体模块（100）包括：一体形成有主体部分（2a）和外部连接端子部分（2b）的电极板（2），并且主体部分（2a）布置在同一平面 ; 安装在主体部分（2a）的一个表面（安装表面）（2c）上的半导体芯片（1）; 和主体部（2a）的另一面（散热面）（2d）露出的树脂封装体（3）和电极板（2）的主体部分（2a）和半导体芯片（1） ）用树脂密封。 散热面（2d）与树脂封装（3）的底部（3a）相同。 因此，散热性和可靠性得到改善，并且可以实现尺寸的减小。

公开(公告)号：US20130221516A1

公开(公告)日：2013-08-29

申请号：US13881654

申请日：2011-02-09

申请人： Shinsuke Asada ,  Kenjiro Nagao ,  Dai Nakajima ,  Yuetsu Watanabe ,  Yoshihito Asao ,  Takuya Oga ,  Masaki Kato

发明人： Shinsuke Asada ,  Kenjiro Nagao ,  Dai Nakajima ,  Yuetsu Watanabe ,  Yoshihito Asao ,  Takuya Oga ,  Masaki Kato

IPC分类号： H01L23/495

CPC分类号： H01L23/49568 ,  H01L23/3107 ,  H01L23/36 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/40 ,  H01L24/41 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/0603 ,  H01L2224/06051 ,  H01L2224/06181 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/40247 ,  H01L2224/4103 ,  H01L2224/41051 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48139 ,  H01L2224/48247 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83411 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84801 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/07802 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/37099

摘要： A power semiconductor module (100) includes: an electrode plate (2) in which a body portion (2a) and an external connection terminal portion (2b) are integrally formed, and the body portion (2a) is arranged on the same flat surface; a semiconductor chip (1) mounted on one surface (mounting surface) (2c) of the body portion (2a); and a resin package (3) in which the other surface (heat dissipation surface) (2d) of the body portion (2a) is exposed, and the body portion (2a) of the electrode plate (2) and the semiconductor chip (1) are sealed with resin. The heat dissipation surface (2d) is the same surface as the bottom (3a) of the resin package (3); and consequently, heat dissipation properties and reliability are improved and a reduction in size can be achieved.

摘要翻译： 功率半导体模块（100）包括：一体形成有主体部分（2a）和外部连接端子部分（2b）的电极板（2），并且主体部分（2a）布置在同一平面 ; 安装在主体部分（2a）的一个表面（安装表面）（2c）上的半导体芯片（1）; 和主体部（2a）的另一面（散热面）（2d）露出的树脂封装体（3）和电极板（2）的主体部分（2a）和半导体芯片（1） ）用树脂密封。 散热面（2d）与树脂封装（3）的底部（3a）相同。 因此，散热性和可靠性得到改善，并且可以实现尺寸的减小。

公开(公告)号：US09117688B2

公开(公告)日：2015-08-25

申请号：US13985780

申请日：2011-04-18

申请人： Takuya Oga ,  Masaki Kato ,  Tsuyoshi Sugihara

发明人： Takuya Oga ,  Masaki Kato ,  Tsuyoshi Sugihara

IPC分类号： H01L23/48 ,  H01L23/495 ,  H01L25/07 ,  H01L23/00 ,  H01L23/31 ,  H02K11/00 ,  H02M7/537 ,  B60L11/18 ,  B60L15/00

CPC分类号： H01L25/07 ,  B60L11/1803 ,  B60L15/007 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/3701 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48699 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H02K11/33 ,  H02M7/537 ,  Y02T10/645 ,  Y02T10/7005 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

摘要： Provided is a semiconductor device including: a first MOS-FET (21) joined to a first base plate (11) via solder (61); a second MOS-FET (22) joined to a second base plate (12) via solder (64); a first lead (31) joining the first base plate (11) and the second MOS-FET (22); and a second lead (32) joining the second MOS-FET (22) and a current path member (13) that gives and receives current flowing through the MOS-FETs (21, 22) to and from the outside. The second base plate (12) is more rigid than both the leads (31, 32), a boundary line (D-D) intersects the second base plate (12) without intersecting both the leads (31, 32), the boundary line including a gap portion (52) along which both the MOS-FETs (21, 22) are opposed to each other, extending in the direction in which both the MOS-FETs (21, 22) are not opposed to each other.

摘要翻译： 提供一种半导体器件，包括：通过焊料（61）与第一基板（11）接合的第一MOS-FET（21）; 通过焊料（64）与第二基板（12）接合的第二MOS-FET（22）; 连接所述第一基板（11）和所述第二MOS-FET（22）的第一引线（31）; 以及连接所述第二MOS-FET（22）的第二引线（32）和向外部施加流过MOS-FET（21,22）的电流和电流通路构件（13）。 第二基板（12）比两个引线（31,32）更刚性，边界线（DD）与第二基板（12）相交而不与两个引线（31,32）相交，边界线包括一个 两个MOS-FET（21,22）沿着两个MOS-FET（21,22）彼此相对的方向彼此相对延伸的间隙部分（52）。

公开(公告)号：US20130320818A1

公开(公告)日：2013-12-05

申请号：US13985780

申请日：2011-04-18

申请人： Takuya Oga ,  Masaki Kato ,  Tsuyoshi Sugihara

发明人： Takuya Oga ,  Masaki Kato ,  Tsuyoshi Sugihara

IPC分类号： H01L25/07 ,  H02K11/00 ,  H02M7/537

CPC分类号： H01L25/07 ,  B60L11/1803 ,  B60L15/007 ,  H01L23/3107 ,  H01L23/49524 ,  H01L23/49551 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/02166 ,  H01L2224/04026 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/0603 ,  H01L2224/06181 ,  H01L2224/27013 ,  H01L2224/291 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/3701 ,  H01L2224/37147 ,  H01L2224/40095 ,  H01L2224/40137 ,  H01L2224/40247 ,  H01L2224/40249 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48699 ,  H01L2224/73215 ,  H01L2224/73221 ,  H01L2224/73263 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/84385 ,  H01L2224/84801 ,  H01L2224/8485 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3511 ,  H02K11/33 ,  H02M7/537 ,  Y02T10/645 ,  Y02T10/7005 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05552

摘要： Provided is a semiconductor device including: a first MOS-FET (21) joined to a first base plate (11) via solder (61); a second MOS-FET (22) joined to a second base plate (12) via solder (64); a first lead (31) joining the first base plate (11) and the second MOS-FET (22); and a second lead (32) joining the second MOS-FET (22) and a current path member (13) that gives and receives current flowing through the MOS-FETs (21, 22) to and from the outside. The second base plate (12) is more rigid than both the leads (31, 32), a boundary line (D-D) intersects the second base plate (12) without intersecting both the leads (31, 32), the boundary line including a gap portion (52) along which both the MOS-FETs (21, 22) are opposed to each other, extending in the direction in which both the MOS-FETs (21, 22) are not opposed to each other.

摘要翻译： 提供一种半导体器件，包括：通过焊料（61）与第一基板（11）接合的第一MOS-FET（21）; 通过焊料（64）与第二基板（12）接合的第二MOS-FET（22）; 连接所述第一基板（11）和所述第二MOS-FET（22）的第一引线（31）; 以及连接所述第二MOS-FET（22）的第二引线（32）和向外部施加流过MOS-FET（21,22）的电流和电流通路构件（13）。 第二基板（12）比两个引线（31,32）更刚性，边界线（DD）与第二基板（12）相交而不与两个引线（31,32）相交，边界线包括一个 两个MOS-FET（21,22）沿着两个MOS-FET（21,22）彼此相对的方向彼此相对延伸的间隙部分（52）。

公开(公告)号：US20070287226A1

公开(公告)日：2007-12-13

申请号：US11760202

申请日：2007-06-08

申请人： Takuya Oga ,  Mitsuhiro Kato

发明人： Takuya Oga ,  Mitsuhiro Kato

IPC分类号： H01L21/00

CPC分类号： H01L21/67138 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L2224/75 ,  H01L2224/75252 ,  H01L2224/81121 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/014

摘要： Detection of bumps' contact is enabled correctly, and the trouble of crushing a bump too much by an overshoot and connecting with an adjacent bump is abolished. The manufacturing apparatus of a semiconductor device and the manufacturing method of a semiconductor device which make it possible to perform stable flip chip bonding by an easy mechanism.The manufacturing apparatus of the semiconductor device concerning the present invention has a stage where a substrate is arranged, a movable member formed made it possible to advance or retreat towards the stage, an elastic member formed in the movable member, a chip adsorption means which can adsorb the chip supported by the elastic member made it possible to advance or retreat towards a stage, a press means which can be pressed towards a stage about a chip adsorption means, a stopper which is formed in a movable member and can specify displacement of the direction close to a stage of a chip adsorption means by contacting a chip adsorption means from the stage side, a driving means which a movable member drives, and a control unit which controls operation of a driving means.

摘要翻译： 可以正确检测凸块的接触，并且消除由于过冲而破坏凸块并与相邻凸块连接的麻烦。 半导体器件的制造装置和半导体器件的制造方法能够通过简单的机构进行稳定的倒装芯片接合。 关于本发明的半导体器件的制造装置具有布置基板的阶段，形成为使得能够朝向台前进或后退的可动部件，形成在可动部件中的弹性部件，芯片吸附装置，其可以 吸附由弹性构件支撑的芯片使得能够朝向台前进或后退;压力机构，其可以朝着围绕芯片吸附装置的台阶被挤压;止动器，其形成在可动构件中，并且可以指定位移 通过使来自舞台侧的芯片吸附装置，可移动部件驱动的驱动装置和控制驱动装置的操作的控制单元接触芯片吸附装置的阶段。